8 results about "Te element" patented technology

The invention belongs to the technical field of energy materials, relates to a thermoelectric material, and particularly provides a high-performance n-type PbS-based medium-entropy thermoelectric material and a preparation method thereof, which are used for solving the problem of poor thermoelectric performance of a PbS-based material in the practical application process of the thermoelectric field. The medium-entropy thermoelectric material PbS (1-x) Sex-yTey is obtained by performing solid solution on a designed amount of Se element and Te element in a PbS-based material, x is more than or equal to 0.48 and less than or equal to 0.5, y is more than or equal to 0.15 and less than or equal to 0.25, and the thermal conductivity of the PbS-based material is effectively reduced; the preparation method comprises the following steps: preparing a medium-entropy thermoelectric material PbS (1-x) Sex-yTey, performing gap doping on the medium-entropy thermoelectric material PbS (1-x) Sex-yTey with a designed amount of Cu element to optimize the carrier concentration, and finally obtaining the high-performance n-type PbS-based medium-entropy thermoelectric material, the room-temperature ZT value and the average ZT value of the material are up to 0.53 and 1.08 respectively, and the material has excellent thermoelectric performance; meanwhile, the high-performance n-type PbS-based medium-entropy thermoelectric material has the obvious advantage of low cost, and wide application of the thermoelectric technology is promoted.

The present invention discloses a thermoelectric material of a ternary system and a preparation method thereof, including La, Bi and Te. In terms of mass percentage, the proportion of the La element is 4-5%, the proportion of the Bi element is 10-19%, the proportion of the Te element is 2%-14%, and the rest is the O element, which is synthesized by a solvothermal method. The present invention innovatively uses La to improve the electrical properties of the material and uses Bi to reduce the thermal conductivity, ultimately improving the thermoelectric properties, ensuring that its various performance parameters do not fluctuate greatly with temperature changes, and the preparation of its material has the potential for industrial production, being suitable for miniaturized and large-scale production and manufacturing.

The invention provides a preparation method and application of a high-performance semiconductor thermoelectric crystal bar, and relates to the field of thermoelectric materials. The high-performance semiconductor thermoelectric crystal bar is obtained by additionally adding 10-15% of Te, smelting in a mixed gas environment of Ar and H2 in a volume ratio of (3-5): 1, swinging, cooling, zone-melting and post-processing. Additionally added Te compensates for the actual component loss caused by Te element volatilization in the high-temperature smelting process, the volatilized Te is captured by H2 to generate H2Te gas, the H2Te gas is re-deposited into the melt through gas phase diffusion, dynamic circulation is formed, and the Te component deviation is reduced; te agglomeration holes are avoided, and the density of the material is improved; the composition uniformity of the material is improved, lattice scattering is further reduced, the conductivity and the Seebeck coefficient are improved, and the thermoelectric figure of merit is further improved.

The invention discloses a bismuth telluride-based thermoelectric element, a bismuth telluride-based thermoelectric device and a preparation method of the bismuth telluride-based thermoelectric element and the bismuth telluride-based thermoelectric device, and relates to the technical field of thermoelectricity, the bismuth telluride-based thermoelectric element comprises a bismuth telluride-based thermoelectric material layer and a barrier layer located on one surface of the bismuth telluride-based thermoelectric material layer, and the barrier layer comprises a nickel-iron alloy. When Sn-based solder is adopted to weld an electrode on the bismuth telluride-based thermoelectric element provided by the invention, the barrier layer comprising the nickel-iron alloy can effectively inhibit the Te element in the bismuth telluride-based thermoelectric material from diffusing into the welding layer to form a Sn-Te intermetallic compound with the Sn in the welding layer; and the interface contact resistivity of less than 1 mu omega.cm < 2 > and a thinner interface reaction layer are arranged between the barrier layer comprising the nickel-iron alloy and the bismuth telluride-based thermoelectric material layer. The barrier layer comprising the ferro-nickel alloy has huge application value in thermoelectric device packaging.

The application relates to a high-performance n-type bismuth telluride-based thermoelectric material and a preparation method thereof, and belongs to the technical field of thermoelectric conversion. The chemical composition of the n-type bismuth telluride-based thermoelectric material is La y Bi 2‑ y Te 2.7 Se 0.3 -xwt%Te, 0<=x<=1.5, 0<=y<=0.015, x and y are not 0 at the same time. Under the premise of fixing the Se doping amount, the application reduces the Te element to increase Te vacancies, reduces the carrier concentration, moves the dimensionless thermoelectric optimization value zT peak to the low-temperature direction, simultaneously utilizes La-doped Bi to optimize the electrothermal transport performance, and finally realizes the obvious improvement of the zT value.

The invention discloses a tellurium element modified cobalt-free lithium-rich manganese-based positive electrode material and a preparation method thereof, and belongs to the technical field of lithium ion battery materials. According to the method, Te and a lithium-rich manganese-based positive electrode material are subjected to solid-phase mixing, calcination, further annealing and surface doping on the material so as to obtain the modified LLR-Te material. The Te element of the template is doped in a gradient manner to form a strong Te-O covalent bond, so that phase change is inhibited, a lattice frame is stabilized, the structure is stabilized under high voltage, and the electrochemical stability is maintained; and meanwhile, an interface modification layer is constructed on the surface of the material in situ, electrolyte erosion is blocked through chemical bonding, and transition metal dissolution is inhibited. According to the method, the structural stability, the cycle life and the rate capability of the material under the high voltage of 4.8 V are remarkably improved. The modified material disclosed by the invention shows excellent high-voltage compatibility in a liquid / solid-state battery system, and an innovative solution is provided for a positive electrode material of a high-energy-density lithium ion battery.

The invention discloses a bismuth telluride-based thermoelectric material, a preparation method thereof and a thermoelectric device, and belongs to the technical field of materials. The bismuth telluride-based thermoelectric material comprises a base material, the base material comprises Bi, Te and Se, the general formula of the base material is Bi2Te3-xSex, and x is more than 0 and less than 3; te element is doped in the matrix material and / or a second phase exists in the matrix material, and the second phase is one or more of Se element, MgSe phase and B precipitate. The thermoelectric material prepared by the invention realizes the combination of excellent mechanical properties and thermoelectric properties, and solves the problem of extremely high rejection rate caused by poor mechanical properties of commercial bismuth telluride materials.

The invention relates to a Cu-Te / ZnO (at) Gr composite material and a preparation method thereof. The preparation method comprises the following steps: step 1, pre-alloying copper and tellurium; step 2, supersonic gas atomization powder preparation; 3, zinc oxide in-situ growth, wherein the surface of the Cu-Te pre-alloyed powder obliquely grows and is coated with a ZnO nanoneedle array; 4, antioxidant composite treatment is conducted, specifically, the ZnO-coated Cu-Te powder prepared in the step 3 is soaked in an ethanol solution containing 0.8 wt% of an organic borosilicate complexing agent; and step 5, chemically bonding graphene, and treating by adopting a pH response type graphene oxide dispersion liquid. By adopting the technical scheme, the obliquely growing ZnO nanoneedle transition layer and the graphene shell layer are constructed to synergistically form a three-dimensional anchoring structure, chemical bonding with graphene is enhanced, and on the basis of the low-temperature in-situ reaction of the zinc-ammonium complexing solution and the synergistic effect of the organic boron-silicon complexing agent, a compact glass phase is formed at a high temperature, so that the performance of the composite material is improved. The volatilization rate of the Te element is reduced, and a Si-O-Zn covalent bond is formed between ZnO and graphene in combination with three-stage pH regulation.