62 results about "Tellurium dioxide" patented technology

The invention discloses a preparation method of a tellurium-doped metal-nitrogen carbon catalyst and application of the tellurium-doped metal-nitrogen carbon catalyst in a zinc-air battery, a metal organic framework precursor is synthesized by utilizing a nitrogen-containing heterocyclic ring ligand and transition metal, and the metal organic framework precursor is mixed with tellurium dioxide and then subjected to high-temperature calcination in an inert atmosphere to obtain the tellurium uniformly dispersed and doped metal-nitrogen carbon catalyst. The prepared tellurium-doped metal-nitrogen carbon catalyst fully utilizes the characteristics of moderate tellurium coordination capability and rich p electrons, further exerts the advantages of a metal-nitrogen carbon monatomic catalyst, avoids the use of a noble metal catalyst which is scarce in resource and relatively high in cost, and is suitable for industrial production. Wide application prospects are realized in the fields of electro-catalytic oxygen reduction, zinc-air batteries and the like.

The invention discloses a method for cascade recovery of tellurium from a complex tellurium-containing material. The method comprises the steps of acid pickling, reduction neutralization, pyrogenic transformation, leaching and neutralization. According to the method, through cooperative treatment of a wet process and a pyrogenic process, the problem of slag phase wrapping is effectively solved, and tellurium with different valence states in a complex tellurium-containing material is converted into high-quality tellurium neutralization slag in a gradient mode. The selenium removal rate is not lower than 95%, the tellurium recovery rate reaches up to 90% or above, efficient separation of selenium and tellurium is achieved, and the produced tellurium dioxide neutralization slag can be used for further purification and refining.

Methods for preparing catalysts for oxidative dehydrogenation (ODH) of alkanes such as ethane are provided. An exemplary method includes forming a slurry including metal oxides; one or more of a bismuth compound, an antimony compound, and a tellurium compound; a reducing agent; and water; and heating the slurry to form the catalyst. The metal oxides include an oxide of molybdenum and an oxide of vanadium. The bismuth compound includes bismuth oxide, bismuth hydroxide, or a bismuth carbonate. The antimony compound includes an oxide of antimony, an antimony acetate, or an antimony ethoxide. The tellurium compound includes tellurium dioxide. The reducing agent includes molybdenum dioxide and may further include vanadium dioxide. The methods use all inorganic reagents, with no build up COx pressure observed during the hydrothermal synthesis.

The invention discloses a device and a method for producing refined tellurium. The device comprises an electrodeposition tank, a low-position circulating liquid tank, a circulating liquid pump, a precision filter, a high-position circulating liquid tank and a rectifier which are communicated according to a connection relation. The method comprises the following steps: carrying out wet ball milling on tellurium slag and water, pumping obtained slurry into a leaching kettle, adding water for dilution, then adding industrial-grade sodium sulfide for reaction, and filtering to obtain a purified solution; raising the temperature of the purified liquid, adding dilute sulphuric acid for neutralization reaction, and filtering to obtain wet tellurium dioxide; returning the wet tellurium dioxide into the neutralization kettle, adding hot water for repeated washing, and calcining the washed wet tellurium dioxide into dry tellurium dioxide; taking analytically pure sodium sulfide, caustic soda flakes, dry tellurium dioxide and water to react, standing and precipitating after the reaction, and extracting supernatant to obtain electrodeposition liquid; filling the electrodeposition liquid into an electrodeposition cell, starting a rectifier, a liquid circulating pump and a precision filter, setting current and voltage, and starting electrodeposition; tellurium powder, waste electrodeposition liquid and bottom impurities are produced. The problems of low tellurium electrodeposition efficiency, poor tellurium powder quality, low electrodeposition direct recovery rate and the like can be effectively solved.

The invention provides a method for preparing high-purity tellurium dioxide powder from refined tellurium slag, and belongs to a deep processing technology of a rare and dispersed element tellurium in the field of nonferrous metallurgy. According to the technical scheme, the method comprises the following steps. The method comprises the steps of tellurium slag water leaching, water leaching liquid impurity removal, solution complexing pretreatment, crude tellurium dioxide neutralization and precipitation with sulfuric acid, crude tellurium dioxide dissolution with concentrated hydrochloric acid, tellurium reduction with sodium sulfite, tellurium oxide powder oxidation with nitric acid, tellurium dioxide dissolution with concentrated hydrochloric acid, tellurium dioxide neutralization and precipitation with a refined tellurium tetrachloride solution, water washing and high-temperature calcination. By means of the steps, the tellurium dioxide powder with the chemical purity meeting the requirements of TeO2 99.90 or TeO2 99.50 of YS / T 1194-2017 tellurium dioxide and the average particle size D50 ranging from 40 micrometers to 75 micrometers can be prepared through the technology, and the tellurium dioxide powder with the chemical purity meeting the TeO2 99.90 or TeO2 99.50 brand requirements of YS / T 1194-2017 tellurium dioxide. In the whole process, the tellurium slag with high impurity content can be used as a raw material, and the impurity content can be effectively removed without electrodeposition of refined tellurium, so that tellurium dioxide is refined. And the process conditions are mild, the equipment is simple, the operation is simple and convenient, and the production period is short.

The utility model relates to a device for producing tellurium powder by using tellurium dioxide, and belongs to the technical field of tellurium powder production equipment. Comprising a leaching kettle, a plate-and-frame filter press, a primary reduction kettle, a primary reduction filter barrel, a secondary reduction kettle, a secondary reduction filter barrel and a waste liquid tank which are sequentially connected, materials in the leaching kettle are conveyed into the plate-and-frame filter press through a first conveying pump, and the leaching kettle is further connected with a hydrochloric acid storage tank through a pipeline; the opening of the primary reduction kettle is positioned right above the primary reduction filter barrel, and the primary reduction kettle is also connected with a sulfur dioxide steel cylinder; materials in the primary reduction filter barrel are conveyed into a secondary reduction kettle through a second conveying pump; an outlet of the secondary reduction kettle is positioned right above the secondary reduction filter barrel, and the secondary reduction kettle is also connected with a sulfur dioxide steel cylinder; materials of the secondary reduction filter barrel are input into the waste liquid tank through a third conveying pump; the tellurium dioxide is produced by adopting the method, the technological operation is simple, the production efficiency is high, the tellurium content of the liquid after secondary reduction is low, the liquid can be reused in a leaching kettle, and the use amount of hydrochloric acid is reduced.

The application provides a method for separating selenium tellurium from high-selenium tellurium dioxide through multistage conversion, and belongs to the technical field of non-ferrous metallurgy. The method comprises the following steps: a, material preparation; b, primary conversion leaching: selectively reducing selenium in a solution containing a reducing agent at pH 8-11 to obtain a selenium tellurium-containing residue and a primary leaching solution; c, secondary conversion leaching: selectively leaching tellurium in a strong alkaline solution containing a reducing agent to obtain elemental selenium and a secondary leaching solution; and d, neutralization treatment: combining the two leaching solutions and adding acid to obtain high-purity tellurium dioxide. The method is simple to operate, short in production cycle, and realizes efficient separation of selenium tellurium. The purity of the obtained elemental selenium is greater than or equal to 95%, the purity of the obtained tellurium dioxide meets the requirements of electrodeposition for producing 4N tellurium, and the method is suitable for large-scale production.

The invention discloses a one-step synthesis method of environment-friendly Ag2Te quantum dots. The one-step synthesis method comprises the following steps: providing a silver precursor and a tellurium precursor; the tellurium precursor is prepared by mixing tellurium dioxide and dodecanethiol; mixing oleylamine and octadecene, heating to a preset temperature, adding the silver precursor, rapidly injecting the tellurium precursor after a first reaction time, stopping heating after a second reaction time, and cooling to obtain a quantum dot crude solution; and purifying the quantum dot crude solution to obtain the required environment-friendly Ag2Te quantum dot. The size distribution and the exciton absorption peak of the environment-friendly Ag2Te quantum dots are related to the preset temperature. The invention further discloses the environment-friendly Ag2Te quantum dot obtained by the method and application thereof. The tellurium precursor and the silver precursor which do not contain phosphine are adopted, the synthesis process is simple and non-toxic, different size distribution and wide-range exciton absorption peaks of the Ag2Te quantum dots are achieved, and the monodispersity of the Ag2Te quantum dots can be guaranteed.

The application discloses a method for preparing high-purity tellurium dioxide powder from waste tellurium dioxide target material, comprising the following steps: step one, crushing the waste tellurium dioxide target material to obtain tellurium dioxide pre-crushed material; step two, ball-milling the tellurium dioxide pre-crushed material and drying to obtain tellurium dioxide powder; and step three, purifying the tellurium dioxide powder to obtain high-purity tellurium dioxide powder. 131 The application solves the problems of traditional powderization process, such as serious powder agglomeration, wide particle size distribution, easy introduction of impurities and poor industrial applicability, and the prepared powder can be directly applied to the production of tellurium dioxide target material, and the method can also be applied to the preparation of tellurium dioxide single crystal, infrared acousto-optic devices and electronic component materials, and has excellent industrial application prospect.

The application discloses a rubber accelerator 2-mercaptobenzothiazole tellurium and a preparation method and application thereof. The 2-mercaptobenzothiazole and the tellurium dioxide are respectively dissolved in solvents to obtain a tellurium dioxide solution and a 2-mercaptobenzothiazole solution; the tellurium dioxide solution is dropped into the 2-mercaptobenzothiazole solution, and a rubber accelerator 2-mercaptobenzothiazole tellurium is obtained by reaction under stirring. The preparation method is simple in operation, has few side reactions and can be carried out at room temperature. The rubber accelerator 2-mercaptobenzothiazole tellurium prepared has a medium speed and is superior to existing thiazole accelerators (M and DM) and selenothiazole accelerators (SeM) in performance.

The invention relates to the technical field of scattered metal recovery, in particular to a method for separating and recovering tellurium dioxide in cuprous telluride compound waste, which comprises the following steps: step 1, pretreatment and oxidizing roasting: crushing and grinding the cuprous telluride compound waste, and sieving with a 200-mesh sieve to obtain waste powder; the waste powder is placed in a roasting furnace, oxidizing roasting is carried out in the air atmosphere, the roasting temperature is controlled to be 550-650 DEG C, the roasting time is 2-3 h, and a roasted product is obtained.According to the method, according to the characteristics of the cuprous telluride compound waste, cuprous telluride is converted into tellurium dioxide and copper oxide which are easy to leach out through oxidizing roasting; and then primary separation of tellurium and heavy metal impurities is achieved through normal-pressure alkaline leaching, a high-quality tellurium dioxide product is obtained through acidification tellurium precipitation and refining purification subsequently, and the problem that in the prior art, the separation difficulty of tellurium and impurities is large is effectively solved.

The invention belongs to the technical field of comprehensive recovery of scattered metal tellurium, and particularly relates to a method for recovering copper and tellurium from copper telluride slag. According to the method, metal copper and metal tellurium are effectively recovered through directional oxidizing roasting, water leaching copper and tellurium separation, alkaline leaching impurity removal and tellurium enrichment and neutralization and precipitation of tellurium dioxide, and meanwhile enrichment of precious metal with the extremely low content in the raw materials is completed; according to the method, the metal copper and the metal tellurium can be efficiently recovered from the copper telluride slag, the production process is simple, the recovery rate of the copper reaches 99% or above, the recovery rate of the tellurium can reach 90% or above, and the purity of tellurium dioxide is larger than 98%.

The invention discloses a method for extracting tellurium from a sodium tellurite solution through electrodeposition, and belongs to the technical field of non-ferrous metal hydrometallurgy. The method comprises the following steps: dissolving crude tellurium dioxide in a sodium hydroxide solution at 60-90 DEG C to prepare a sodium tellurite electrolyte containing 200-240 g / L of tellurium and 90-110 g / L of sodium hydroxide; in the electrodeposition process, a composite additive composed of sodium ascorbate, pentasodium diethylenetriamine pentaacetate, sodium citrate and polyvinylpyrrolidone is synchronously added into the electrolyte. And carrying out electrodeposition for 14-15 days under the conditions that the current density is 40-60A / m, the voltage is 15-30V and the temperature is 15-30 DEG C. Through the synergistic effect of the composite additive, tellurite radicals in the anode region are remarkably inhibited from being oxidized into insoluble sodium tellurate, heavy metal impurity ions in the electrolyte are strongly complexed, and therefore the direct recovery rate of tellurium is increased to 90% or above while the better current efficiency is kept, and the purity of the obtained tellurium ingot reaches 99.95% or above.

The invention relates to a Co3TeO6 single crystal growth method, which comprises: S1, fully grinding anhydrous sodium carbonate, cobaltosic oxide and tellurium dioxide as raw materials in a mortar, placing into an alumina crucible, and sintering at a high temperature of 850 DEG C to obtain a precursor Na2Co2TeO6 powder; s2, the precursor powder obtained in the step S1 and molybdenum trioxide are weighed according to the mass ratio of 2: 1, ground and transferred to an aluminum oxide crucible; and S3, sealing the crucible in the step S2 with high-temperature cement, putting the crucible in a muffle furnace, raising the temperature to 980 DEG C at a speed of 5 DEG C / min in a first temperature zone, preserving heat for 6 hours at a speed of 980 DEG C in a second temperature zone, reducing the temperature from 980 DEG C to 730 DEG C at a speed of 50 hours in a third temperature zone, and reducing the temperature to room temperature at a speed of 5 DEG C / min in a fourth temperature zone, so as to obtain the centimeter-level high-quality Co3TeO6 single crystal. The preparation method of the Co3TeO6 single crystal provided by the invention has the advantages of low cost, easiness in operation and stable product phase. The Co3TeO6 single crystal material can be used for manufacturing magnetic devices and magnetic materials, manufacturing high-performance optical devices and electronic devices, and also can be used as an electrode material of a lithium ion battery.

The invention relates to a method for preparing 4N refined tellurium by comprehensively utilizing tellurium anode slime. The method comprises the following steps: S1, drying and ball-milling the tellurium anode slime; s2, water is added into the tellurium anode slime obtained after drying and ball milling for preheating so that the tellurium anode slime can be pulpified, and then solid sodium chloride and concentrated sulfuric acid are sequentially added for stirring and leaching; slowly adding ammonium sulfate into the leachate; and after the reaction is completed, adjusting the temperature and pH of the system to obtain the electrolyte. S3, the electrolyte is fed into a circulating electrolytic bath for selective reduction removal of main impurities, then solid-liquid separation is conducted after filtering is conducted through a ceramic membrane, and the purified electrolyte is obtained; s4, adjusting the potential of the purified electrolyte for electrolysis, and generating tellurium dioxide precipitate through hydrolysis; s5, washing, filtering and vacuum drying the tellurium dioxide precipitate, and cooling to room temperature to obtain high-quality tellurium dioxide; and S6, dissolving tellurium dioxide in a sodium hydroxide solution, and directly preparing 4N refined tellurium with the tellurium content being greater than or equal to 99.995% by adopting an electrodeposition process. The method is simple, efficient and low in cost.

The invention relates to the technical field of luminescent material synthesis. The invention provides a Te-based hybrid halide luminescent material and a preparation method thereof. The luminescent material is of a zero-dimensional organic-inorganic hybrid crystal structure and comprises [TeCl6] < 2-> anions and organic phosphonium cations (C25H21PCl) < + > containing polar substituent groups. The preparation method comprises the following steps: dissolving tellurium dioxide in hydrochloric acid; continuously adding (2-chlorobenzyl) triphenyl phosphonium chloride, and reacting to generate a precipitate; centrifugally separating the precipitate, and drying under a vacuum condition to obtain intermediate powder; dissolving the powder in acetonitrile; and putting the solution into a sample bottle, putting the sample bottle into a sealed container containing diethyl ether, and carrying out solvent diffusion crystallization to obtain the luminescent material. According to the luminescent material, energy coupling and non-radiation loss between luminescent units are reduced, excitation energy can be more sufficiently converted into radiation luminescence, the luminous efficiency is improved, the luminescent material can be better matched with a blue light wave band, and the luminescent material is suitable for application scenes such as high-brightness solid-state illumination and photoelectric display.

The invention belongs to the technical field of scattered metal separation, and particularly relates to a method for separating and recovering selenium and tellurium from a selenium-tellurium alloy. The invention provides a method for separating and recovering selenium and tellurium from selenium-tellurium alloy, which comprises the following steps: oxidizing and roasting the selenium-tellurium alloy to obtain tellurium dioxide solid and SeO2 flue gas; mixing the tellurium dioxide solid with a reducing agent, and performing vacuum reduction to obtain tellurium; the reducing agent is a mixture of tea leaf residues and potassium sulfate; and mixing the SeO2 flue gas with water, and carrying out electrodeposition to obtain selenium. The method provided by the invention overcomes the bottlenecks of long traditional selenium-tellurium separation process, complex process and the like, and realizes efficient separation and recovery of the industrial-grade selenium-tellurium alloy. And the tea residue is used as a reducing agent, so that waste utilization is realized, the cost is saved, and the method is more environment-friendly.

The application relates to a preparation method of a nanowire structure square acid tellurium zinc ion battery positive electrode material, which comprises the following steps: ultrasonic mixing of tellurium dioxide and square acid to form a white mixed dispersion liquid and pre-reaction by heating; hydrothermal reaction of the mixed dispersion liquid to obtain a crude product; centrifugalization, washing and drying of the crude product to obtain a preliminary product; soaking of the preliminary product into a zinc salt solution for stirring reaction, suction filtration and drying to obtain a final product. The application also relates to a nanowire structure square acid tellurium zinc ion battery positive electrode material and application thereof in a zinc ion battery positive electrode. The nanowire structure square acid tellurium positive electrode material is beneficial to the increase of the contact area of the tellurium positive electrode material and an electrolyte, the promotion of electrochemical reaction kinetics, the complete reaction of the electrode material, the increase of energy density, the avoidance of the problem of the decrease of cycle performance caused by the volume change of the electrode material in the electrochemical reaction process, wide application prospect of the prepared material in the zinc ion battery positive electrode, and the increase of the energy density and cycle stability of the battery.

The present invention discloses a method for eliminating the generation of small-angle grain boundary defects in the growth of tellurium dioxide single crystals, including the processing of seed crystals, the commutation treatment of seed crystals, and the growth of tellurium dioxide single crystals by the crucible descent method. Among them, the commutation treatment operation of the seed crystal refers to using the (1-10) crystal plane as the crystal growth plane instead of the traditional (110) crystal plane. The present invention uses the commutation treatment of the seed crystal to grow single crystals, replacing the method of eliminating defects through multiple iterations, improving the overall utilization rate of the crystal rod and the quality of the seed crystal, thereby further improving the yield of TeO2 single crystal products and reducing quality fluctuations.

The invention belongs to the field of chemical industry, relates to a tellurium dioxide preparation technology, and provides a 4N-grade tellurium dioxide preparation method which comprises the following steps: adding tellurium hexafluoride gas into an alkaline solution for hydrolysis reaction to obtain a tellurate suspension, and filtering and drying the tellurate suspension to obtain a tellurate crude product; adding the tellurate crude product into a concentrated hydrochloric acid solution, stirring, dissolving and filtering to obtain a tellurium tetrachloride solution; dropwise adding stronger ammonia water into the tellurium tetrachloride solution until the pH value of the solution is 4-7, and filtering, washing and drying the reaction solution for multiple times to obtain a tellurium dioxide crude product; and calcining the tellurium dioxide crude product at 500-650 DEG C to obtain tellurium dioxide with the purity of more than 99.99%. The preparation method disclosed by the invention is mild in condition and easy to industrially amplify, tellurium hexafluoride can be quickly dissolved in ammonia water, the reaction rate is high, the production efficiency is high, and 4N-grade tellurium dioxide can be prepared.

The present invention provides improved optical properties while suppressing cracking. Glass (10) has an internal transmittance of 85% or more with respect to light having a wavelength of 450 nm and in terms of a thickness of 10 mm, has a d-line refractive index nd of 2.050 or more, and contains at least one of TiO2 and Li2O on an oxide basis. In terms of mol% on an oxide basis, the glass contains Bi2O3 at 20.0% to 40.0%; SiO2 at 0% to 5.0%; Al2O3 at 0% to 5.0%; B2O3 at 15.0% to 35.0%; P2O5 at more than 0% but no more than 20.0%; Nb2O5 at 0% to 12.0%; TeO2 at 1.0% to 30.0%; ZnO at 0% to 20.0%; ZrO2 at 0% to 10.0%; TiO2 at 0% to 20.0%; WO3 at 0% to 7.5%' RO at 0% to 7.0%; and R'2O at 0% to 10.0%. The parameter (A) represented by formula (1) is 0.95 or more.

The invention discloses a self-rectification memristor based on a hafnium zirconium oxide / tellurium oxide heterojunction and preparation and application of the self-rectification memristor, tellurium dioxide is used as an evaporation source, a TiN / HZO substrate is placed in vacuum evaporation equipment for evaporation of a tellurium dioxide film, finally, a metal electrode is evaporated on the tellurium dioxide film, and air annealing is performed to obtain the self-rectification memristor. According to the present invention, the material has characteristics of good switching characteristic, good cycle stability, excellent self-rectification characteristic and broad spectrum response, and can be used in storage devices, coded locks, light response detectors, light synapses, multi-mode neuromorphic calculation units and other related aspects by using the characteristics.

The invention relates to a preparation method of a nanowire structured squaric acid tellurium zinc ion battery positive electrode material. The preparation method comprises the following steps: ultrasonically mixing tellurium dioxide and squaric acid to form white mixed dispersion liquid, and heating for pre-reaction; performing hydrothermal reaction on the mixed dispersion liquid to obtain a crude product; centrifuging, washing and drying the crude product to obtain a primary product; soaking the primary product into a zinc salt solution, stirring for reaction, and performing suction filtration and drying to obtain a final product. The invention also relates to a nanowire structured squaric acid tellurium zinc ion battery positive electrode material and application thereof in a zinc ion battery positive electrode. The nanowire structured squaric acid tellurium positive electrode material disclosed by the invention is beneficial to increasing the contact area between the tellurium positive electrode material and electrolyte, promoting electrochemical reaction kinetics, enabling the reaction of the electrode material to be more complete, improving the energy density, and avoiding the problem of cycle performance reduction caused by the change of the volume of the electrode material in the electrochemical reaction process; the prepared material has a wide application prospect in the positive electrode of the zinc ion battery, and the energy density and the cycling stability of the battery are improved.

The invention belongs to the technical field of metallurgical waste recycling, and particularly relates to a method for preparing tellurium dioxide through oxidizing roasting-vacuum thermal decomposition of copper tellurium slag. The method comprises the following steps: oxidizing and roasting copper tellurium slag powder in an oxygen-containing mixed atmosphere at 400-600 DEG C to obtain a copper tellurium oxide; and performing vacuum thermal decomposition on the copper tellurium oxide, and condensing the obtained tellurium dioxide gas to obtain a tellurium dioxide product. The method can efficiently extract tellurium in the copper tellurium slag, and has the advantages of being short in technological process, low in energy consumption, environmentally friendly, high in tellurium recovery rate (larger than or equal to 95%) and high in tellurium dioxide product purity (larger than or equal to 99.5%).

The present invention discloses a process for quickly preparing positive paste of a sealed lead-acid battery at high temperature under vacuum, belonging to the technical field of lead paste production and paste-making process for lead-acid batteries. The present invention adopts a three-stage paste-making process of dry mixing, wet mixing, and acid mixing, and uses a variety of substances such as needle coke powder, pre-oxidized fiber, tellurium dioxide, tribasic lead sulfate, and PTFE emulsion as lead paste additives, which can not only greatly increase the content of tribasic lead sulfate in the prepared lead paste, regulate the ratio of 3BS to 4BS, optimize the initial capacity and cycle life performance, but also does not require long-term high-temperature treatment during the preparation process and has high process stability, being suitable for industrial production and processing.

The invention relates to the technical field of separation and recovery of selenium and tellurium, in particular to a method for separating and recovering selenium and tellurium from alloy smoke dust. The method comprises the following steps: firstly, mixing alloy smoke dust of a smelting furnace with a sulfuric acid solution to obtain a first-section leaching solution and a first-section leaching residue; mixing the first-stage leaching residues with a selective leaching agent, and controlling the oxidation potential to obtain a second-stage leaching solution and second-stage leaching residues; then mixing the second-stage leachate with a reduction precipitator to obtain crude selenium; and mixing the second-section leaching residues with an alkali solution to obtain a third-section leaching solution and third-section leaching residues, adding concentrated acid into the third-section leaching solution, controlling the pH value, and performing solid-liquid separation after hydrolysis to obtain tellurium dioxide. According to the method, the problems of low separation efficiency and high cost of low-grade and near-content selenium and tellurium smoke dust in a traditional process are solved in one-step leaching, the purity of crude selenium and tellurium dioxide is improved by controlling process conditions, and the method is short in process flow, high in selective separation efficiency, high in comprehensive resource recovery rate and outstanding in environmental protection property and economical efficiency.

This invention provides an activation solution for activating cadmium telluride thin films and its application in the preparation of cadmium telluride thin-film solar cells. The activation solution uses tellurium tetrachloride and cadmium perchlorate hydrate as additives added to an aqueous solution of cadmium chloride. Tellurium tetrachloride generates tellurium dioxide and further tellsurium, which remains on the surface of the cadmium telluride, forming a tellurium-rich layer. Cadmium perchlorate or its hydrate acts as a dispersant, preventing the aggregation of tellurium dioxide and tellurium generated by tellurium tetrachloride, thus promoting the formation of a uniform tellurium-rich layer. Furthermore, cadmium perchlorate hydrate can decompose into cadmium chloride, which can also be used as an activation material. When this activation solution is used in the preparation of cadmium telluride thin-film solar cells, no residual chlorine atoms are detected in the activated cadmium telluride film, and acid etching is unnecessary. A tellurium-rich layer is formed on the crystal surface, and the resulting cadmium telluride solar cell chip achieves a power generation efficiency of 18.5%.

The application relates to a heterojunction PdTe / Bi2Te3 nanometer plate electrocatalyst and a preparation method and application thereof, and the preparation method comprises the following steps: uniformly mixing a palladium salt and hydrochloric acid according to a molar ratio of 1:2 to obtain a palladium precursor solution; weighing polyvinylpyrrolidone K-30, bismuth oxide, tellurium dioxide and sodium hydroxide, placing them in ethylene glycol, stirring and dissolving at 50-90 DEG C, transferring into a polytetrafluoroethylene reaction kettle, placing into a constant-temperature air drying oven, reacting at 200-230 DEG C to obtain a product, washing the product, centrifugally separating to obtain a sample, dispersing the sample in deionized water to obtain a bismuth telluride solution; dispersing the bismuth telluride solution in deionized water, adding the palladium precursor solution at room temperature, stirring and reacting, alternately washing with anhydrous ethanol and deionized water, centrifugally separating and vacuum drying to prepare the heterojunction PdTe / Bi2Te3 nanometer plate electrocatalyst. The application has the advantages of simple process, easy operation, good repeatability, easy control of product morphology and size, and great potential in industrial production.

The invention belongs to the technical field of nano materials, and particularly relates to a method for synthesizing monodisperse Ag2Te colloidal quantum dots through regulation and control of zinc halide, which comprises the following steps: adding silver acetate, zinc halide and oleylamine into a flask, and vacuumizing under a heating condition to prepare a silver precursor; the preparation method comprises the following steps: dissolving tellurium dioxide in n-dodecanethiol under a heating condition to prepare a tellurium precursor; rapidly injecting the prepared tellurium precursor into the prepared silver precursor; after the reaction is finished, cooling to room temperature, purifying by using methylbenzene and methanol, and vacuumizing and drying to obtain the Ag2Te colloidal quantum dots; ag2Te CQDs with uniform size are synthesized through a one-step thermal injection process, surface passivation is improved, and the photoluminescence intensity is improved.

A lead-free glass composition containing vanadium oxide, tellurium oxide, alkali metal oxide, iron oxide, barium oxide and tungsten oxide, but essentially no phosphorus oxide, wherein the lead-free glass composition further contains at least one of the following constituents: yttrium oxide, lanthanum oxide, cerium oxide, erbium oxide, ytterbium oxide, aluminium oxide and gallium oxide. wherein the proportion of tellurium oxide is 25 mol% or more and 43 mol% or less, expressed as the oxide TeO2; and wherein the proportion of alkali metal oxide is 4 mol% or more and 27 mol% or less, expressed as oxide R2O (R: alkali metal element), wherein the proportions (mol-%) of vanadium oxide, tellurium oxide, alkali metal oxide, iron oxide, barium oxide and tungsten oxide correspond to the following ratios, expressed as oxides: [V2O 5] < 2[R2O] + 6[Fe2O 3] + 2 [BaO] < 3.5 [V2O 5] ; [WHERE 3]< [BaO] < [R2O] + [Fe2O 3] < [V2O 5] < [TeO 2] + [R2O], und [R2O] < 6 [Fe2O3].