24 results about "Tellurium dioxide" patented technology

The utility model relates to a device for producing tellurium powder by using tellurium dioxide, and belongs to the technical field of tellurium powder production equipment. Comprising a leaching kettle, a plate-and-frame filter press, a primary reduction kettle, a primary reduction filter barrel, a secondary reduction kettle, a secondary reduction filter barrel and a waste liquid tank which are sequentially connected, materials in the leaching kettle are conveyed into the plate-and-frame filter press through a first conveying pump, and the leaching kettle is further connected with a hydrochloric acid storage tank through a pipeline; the opening of the primary reduction kettle is positioned right above the primary reduction filter barrel, and the primary reduction kettle is also connected with a sulfur dioxide steel cylinder; materials in the primary reduction filter barrel are conveyed into a secondary reduction kettle through a second conveying pump; an outlet of the secondary reduction kettle is positioned right above the secondary reduction filter barrel, and the secondary reduction kettle is also connected with a sulfur dioxide steel cylinder; materials of the secondary reduction filter barrel are input into the waste liquid tank through a third conveying pump; the tellurium dioxide is produced by adopting the method, the technological operation is simple, the production efficiency is high, the tellurium content of the liquid after secondary reduction is low, the liquid can be reused in a leaching kettle, and the use amount of hydrochloric acid is reduced.

The application provides a method for separating selenium tellurium from high-selenium tellurium dioxide through multistage conversion, and belongs to the technical field of non-ferrous metallurgy. The method comprises the following steps: a, material preparation; b, primary conversion leaching: selectively reducing selenium in a solution containing a reducing agent at pH 8-11 to obtain a selenium tellurium-containing residue and a primary leaching solution; c, secondary conversion leaching: selectively leaching tellurium in a strong alkaline solution containing a reducing agent to obtain elemental selenium and a secondary leaching solution; and d, neutralization treatment: combining the two leaching solutions and adding acid to obtain high-purity tellurium dioxide. The method is simple to operate, short in production cycle, and realizes efficient separation of selenium tellurium. The purity of the obtained elemental selenium is greater than or equal to 95%, the purity of the obtained tellurium dioxide meets the requirements of electrodeposition for producing 4N tellurium, and the method is suitable for large-scale production.

The application discloses a rubber accelerator 2-mercaptobenzothiazole tellurium and a preparation method and application thereof. The 2-mercaptobenzothiazole and the tellurium dioxide are respectively dissolved in solvents to obtain a tellurium dioxide solution and a 2-mercaptobenzothiazole solution; the tellurium dioxide solution is dropped into the 2-mercaptobenzothiazole solution, and a rubber accelerator 2-mercaptobenzothiazole tellurium is obtained by reaction under stirring. The preparation method is simple in operation, has few side reactions and can be carried out at room temperature. The rubber accelerator 2-mercaptobenzothiazole tellurium prepared has a medium speed and is superior to existing thiazole accelerators (M and DM) and selenothiazole accelerators (SeM) in performance.

The invention relates to the technical field of scattered metal recovery, in particular to a method for separating and recovering tellurium dioxide in cuprous telluride compound waste, which comprises the following steps: step 1, pretreatment and oxidizing roasting: crushing and grinding the cuprous telluride compound waste, and sieving with a 200-mesh sieve to obtain waste powder; the waste powder is placed in a roasting furnace, oxidizing roasting is carried out in the air atmosphere, the roasting temperature is controlled to be 550-650 DEG C, the roasting time is 2-3 h, and a roasted product is obtained.According to the method, according to the characteristics of the cuprous telluride compound waste, cuprous telluride is converted into tellurium dioxide and copper oxide which are easy to leach out through oxidizing roasting; and then primary separation of tellurium and heavy metal impurities is achieved through normal-pressure alkaline leaching, a high-quality tellurium dioxide product is obtained through acidification tellurium precipitation and refining purification subsequently, and the problem that in the prior art, the separation difficulty of tellurium and impurities is large is effectively solved.

The invention belongs to the technical field of comprehensive recovery of scattered metal tellurium, and particularly relates to a method for recovering copper and tellurium from copper telluride slag. According to the method, metal copper and metal tellurium are effectively recovered through directional oxidizing roasting, water leaching copper and tellurium separation, alkaline leaching impurity removal and tellurium enrichment and neutralization and precipitation of tellurium dioxide, and meanwhile enrichment of precious metal with the extremely low content in the raw materials is completed; according to the method, the metal copper and the metal tellurium can be efficiently recovered from the copper telluride slag, the production process is simple, the recovery rate of the copper reaches 99% or above, the recovery rate of the tellurium can reach 90% or above, and the purity of tellurium dioxide is larger than 98%.

The invention discloses a method for extracting tellurium from a sodium tellurite solution through electrodeposition, and belongs to the technical field of non-ferrous metal hydrometallurgy. The method comprises the following steps: dissolving crude tellurium dioxide in a sodium hydroxide solution at 60-90 DEG C to prepare a sodium tellurite electrolyte containing 200-240 g / L of tellurium and 90-110 g / L of sodium hydroxide; in the electrodeposition process, a composite additive composed of sodium ascorbate, pentasodium diethylenetriamine pentaacetate, sodium citrate and polyvinylpyrrolidone is synchronously added into the electrolyte. And carrying out electrodeposition for 14-15 days under the conditions that the current density is 40-60A / m, the voltage is 15-30V and the temperature is 15-30 DEG C. Through the synergistic effect of the composite additive, tellurite radicals in the anode region are remarkably inhibited from being oxidized into insoluble sodium tellurate, heavy metal impurity ions in the electrolyte are strongly complexed, and therefore the direct recovery rate of tellurium is increased to 90% or above while the better current efficiency is kept, and the purity of the obtained tellurium ingot reaches 99.95% or above.

The invention relates to a method for preparing 4N refined tellurium by comprehensively utilizing tellurium anode slime. The method comprises the following steps: S1, drying and ball-milling the tellurium anode slime; s2, water is added into the tellurium anode slime obtained after drying and ball milling for preheating so that the tellurium anode slime can be pulpified, and then solid sodium chloride and concentrated sulfuric acid are sequentially added for stirring and leaching; slowly adding ammonium sulfate into the leachate; and after the reaction is completed, adjusting the temperature and pH of the system to obtain the electrolyte. S3, the electrolyte is fed into a circulating electrolytic bath for selective reduction removal of main impurities, then solid-liquid separation is conducted after filtering is conducted through a ceramic membrane, and the purified electrolyte is obtained; s4, adjusting the potential of the purified electrolyte for electrolysis, and generating tellurium dioxide precipitate through hydrolysis; s5, washing, filtering and vacuum drying the tellurium dioxide precipitate, and cooling to room temperature to obtain high-quality tellurium dioxide; and S6, dissolving tellurium dioxide in a sodium hydroxide solution, and directly preparing 4N refined tellurium with the tellurium content being greater than or equal to 99.995% by adopting an electrodeposition process. The method is simple, efficient and low in cost.

The invention relates to the technical field of luminescent material synthesis. The invention provides a Te-based hybrid halide luminescent material and a preparation method thereof. The luminescent material is of a zero-dimensional organic-inorganic hybrid crystal structure and comprises [TeCl6] < 2-> anions and organic phosphonium cations (C25H21PCl) < + > containing polar substituent groups. The preparation method comprises the following steps: dissolving tellurium dioxide in hydrochloric acid; continuously adding (2-chlorobenzyl) triphenyl phosphonium chloride, and reacting to generate a precipitate; centrifugally separating the precipitate, and drying under a vacuum condition to obtain intermediate powder; dissolving the powder in acetonitrile; and putting the solution into a sample bottle, putting the sample bottle into a sealed container containing diethyl ether, and carrying out solvent diffusion crystallization to obtain the luminescent material. According to the luminescent material, energy coupling and non-radiation loss between luminescent units are reduced, excitation energy can be more sufficiently converted into radiation luminescence, the luminous efficiency is improved, the luminescent material can be better matched with a blue light wave band, and the luminescent material is suitable for application scenes such as high-brightness solid-state illumination and photoelectric display.

The application relates to a preparation method of a nanowire structure square acid tellurium zinc ion battery positive electrode material, which comprises the following steps: ultrasonic mixing of tellurium dioxide and square acid to form a white mixed dispersion liquid and pre-reaction by heating; hydrothermal reaction of the mixed dispersion liquid to obtain a crude product; centrifugalization, washing and drying of the crude product to obtain a preliminary product; soaking of the preliminary product into a zinc salt solution for stirring reaction, suction filtration and drying to obtain a final product. The application also relates to a nanowire structure square acid tellurium zinc ion battery positive electrode material and application thereof in a zinc ion battery positive electrode. The nanowire structure square acid tellurium positive electrode material is beneficial to the increase of the contact area of the tellurium positive electrode material and an electrolyte, the promotion of electrochemical reaction kinetics, the complete reaction of the electrode material, the increase of energy density, the avoidance of the problem of the decrease of cycle performance caused by the volume change of the electrode material in the electrochemical reaction process, wide application prospect of the prepared material in the zinc ion battery positive electrode, and the increase of the energy density and cycle stability of the battery.

The present invention provides improved optical properties while suppressing cracking. Glass (10) has an internal transmittance of 85% or more with respect to light having a wavelength of 450 nm and in terms of a thickness of 10 mm, has a d-line refractive index nd of 2.050 or more, and contains at least one of TiO2 and Li2O on an oxide basis. In terms of mol% on an oxide basis, the glass contains Bi2O3 at 20.0% to 40.0%; SiO2 at 0% to 5.0%; Al2O3 at 0% to 5.0%; B2O3 at 15.0% to 35.0%; P2O5 at more than 0% but no more than 20.0%; Nb2O5 at 0% to 12.0%; TeO2 at 1.0% to 30.0%; ZnO at 0% to 20.0%; ZrO2 at 0% to 10.0%; TiO2 at 0% to 20.0%; WO3 at 0% to 7.5%' RO at 0% to 7.0%; and R'2O at 0% to 10.0%. The parameter (A) represented by formula (1) is 0.95 or more.

The invention discloses a self-rectification memristor based on a hafnium zirconium oxide / tellurium oxide heterojunction and preparation and application of the self-rectification memristor, tellurium dioxide is used as an evaporation source, a TiN / HZO substrate is placed in vacuum evaporation equipment for evaporation of a tellurium dioxide film, finally, a metal electrode is evaporated on the tellurium dioxide film, and air annealing is performed to obtain the self-rectification memristor. According to the present invention, the material has characteristics of good switching characteristic, good cycle stability, excellent self-rectification characteristic and broad spectrum response, and can be used in storage devices, coded locks, light response detectors, light synapses, multi-mode neuromorphic calculation units and other related aspects by using the characteristics.

This invention provides an activation solution for activating cadmium telluride thin films and its application in the preparation of cadmium telluride thin-film solar cells. The activation solution uses tellurium tetrachloride and cadmium perchlorate hydrate as additives added to an aqueous solution of cadmium chloride. Tellurium tetrachloride generates tellurium dioxide and further tellsurium, which remains on the surface of the cadmium telluride, forming a tellurium-rich layer. Cadmium perchlorate or its hydrate acts as a dispersant, preventing the aggregation of tellurium dioxide and tellurium generated by tellurium tetrachloride, thus promoting the formation of a uniform tellurium-rich layer. Furthermore, cadmium perchlorate hydrate can decompose into cadmium chloride, which can also be used as an activation material. When this activation solution is used in the preparation of cadmium telluride thin-film solar cells, no residual chlorine atoms are detected in the activated cadmium telluride film, and acid etching is unnecessary. A tellurium-rich layer is formed on the crystal surface, and the resulting cadmium telluride solar cell chip achieves a power generation efficiency of 18.5%.

Methods for preparing catalysts for oxidative dehydrogenation (ODH) of alkanes such as ethane are provided An exemplary method includes providing a first mixture including metal oxides; a reducing agent; and one or more of a bismuth compound, an antimony compound, and a tellurium compound; and heating the first mixture to form the catalyst. The first mixture is essentially free of water. The metal oxides include an oxide of molybdenum and an oxide of vanadium. The bismuth compound includes bismuth oxide, bismuth hydroxide, or a bismuth carbonate. The antimony compound includes an oxide of antimony, antimony acetate, or antimony ethoxide. The tellurium compound includes tellurium dioxide.

The present disclosure relates to a low temperature-calcined lead-free glass frit and paste, and a vacuum glass assembly using the same. The glass frit has a novel component system, in which phosphorus pentoxide (P2O5), vanadium pentoxide (V2O5), tellurium dioxide (TeO2), copper oxide (CuO), barium oxide (BaO), zinc oxide (ZnO), bismuth oxide (Bi2O3), and silver oxide (Ag2O) are included at a unique composition ratio according to the disclosure, and replaces a lead-based glass composition of the related art, is calcined at low temperature, includes no inorganic filter or include a minimum amount of an inorganic filler, has a coefficient of thermal expansion matching a coefficient of thermal expansion of a glass base material to prevent a separation or damage, and ensures excellent durability.

The application belongs to the technical field of metallurgy, and particularly relates to a method for cooperatively short-range recovery of arsenic and tellurium and enrichment of valuable metals in arsenic alkali slag, which comprises the following steps: mixing the arsenic alkali slag with a sodium hydroxide solution, introducing oxygen, and performing oxygen pressure alkali leaching at 0.2-0.4 MPa and 115-135 DEG C to obtain a conversion liquid and a conversion residue; S2 mixing the conversion residue obtained in step S1 with a sulfidizing agent and a sodium hydroxide solution, and performing sulfidizing leaching at 75-95 DEG C to obtain a leaching liquid and a leaching residue; S3 mixing the conversion liquid obtained in step S1 with the leaching liquid obtained in step S2, adjusting the pH to 5.0-6.0, and reacting to obtain crude tellurium dioxide and arsenic-containing wastewater. The application realizes efficient dissociation of tellurium in the arsenic alkali slag and synchronous solidification of arsenic by using a'mild oxygen pressure alkali leaching-strengthened alkaline sulfidizing leaching' cooperative process, and realizes cooperative separation and short-range recovery of arsenic and tellurium.

The invention discloses a tellurium dioxide crystal birefringence light filter, which comprises a plurality of stages of Lyot light filtering units, each stage of Lyot light filtering unit sequentially comprises a polaroid P1, a tellurium dioxide crystal T1, a 1 / 2 wave plate W1, a tellurium dioxide crystal T2, a 1 / 4 wave plate W2, a 1 / 2 wave plate W3 and a polaroid P2, the plurality of stages of Lyot light filtering units are arranged in a crystal holder, a rotating piece is arranged on the crystal holder, and the rotating piece is arranged on the crystal holder. The 1 / 2 wave plate W3 of each level of Lyot light filtering unit is installed on a rotating piece, the optical axis direction of the 1 / 2 wave plate W3 is changed through rotation of the rotating piece, and the birefringence light filter with the caliber larger than 50 mm is achieved through the birefringence characteristic of tellurium dioxide. According to the invention, the artificial crystal tellurium dioxide is used as the birefringent crystal, so that the problem that a large aperture cannot be obtained by the existing optical filter technology based on natural crystal Iceland spar can be solved; according to the invention, the birefringent optical filter with the caliber larger than 50 mm can be realized.

The invention belongs to the technical field of non-ferrous metal metallurgy, and relates to a treatment method of tellurium electrodeposition waste liquid. The method comprises the following steps: 1, filtering the tellurium electrodeposition waste liquid to remove suspended solids in the tellurium electrodeposition waste liquid; 2, sodium hydroxide is added into the filtered tellurium electrodeposition waste liquid to be dissolved. Step 3, adding tellurium dioxide into the solution obtained in the step 2, and dissolving; and filtering after removing impurities to obtain a new electrodeposition solution. According to the method, the neutralization step is reduced, the residual alkali in the tellurium electrodeposition waste liquid is effectively utilized, and the consumption of sodium hydroxide is greatly reduced.

The invention discloses a material treatment method for radiopharmaceutical preparation. The material treatment method comprises the following steps: dissolving an irradiated tellurium dioxide target material in a sodium hydroxide solution to generate a sodium tellurite solution; adding hydrogen peroxide and a composite-phase molybdenum carbide catalyst into the solution, and adjusting the pH to an acidic condition to promote the tellurite radical to be preferentially converted into a high-valence tellurium compound; the method comprises the following steps: cooling I-containing iodine vapor through nitrogen-assisted distillation, and introducing the cooled I-containing iodine vapor into an alkaline NaOH solution for capturing; a composite-phase molybdenum carbide catalyst is adopted, the ratio of alpha-MoC to beta-MoC is regulated and controlled, and TiO deposition modification on the surface of beta-MoC is combined, so that the activity, stability and selectivity of the catalyst are remarkably improved; experiments show that the method enables the yield of iodine-131 to reach 92.76%, the purity to reach 99.65% and the content of by-products to be reduced to 0.12%; the contrast experiment further verifies the influence of the catalyst dosage, the phase composition and the distillation condition on the result, and verifies that efficient and high-purity iodine-131 preparation is realized through the catalytic synergistic effect and the surface functionalization design.

The invention discloses a method for recovering antimony and tellurium through combined treatment of lead anode mud and red mud, and relates to the technical field of secondary resource recovery and cyclic utilization. The method comprises the following steps that lead anode slime is dried and then placed in a reaction device to be subjected to vacuum distillation, and arsenic-antimony volatile matter and lead-bismuth alloy are obtained; adding red mud into the arsenic-antimony volatile matter to form a solid mixture, then adding water into the solid mixture to form a solid-liquid mixture, stirring the solid-liquid mixture for constant-temperature leaching, and filtering the solid-liquid mixture subjected to constant-temperature leaching to obtain arsenic-antimony filter residues and tellurium-containing filtrate; adding alkali into the tellurium-containing filtrate to enable the tellurium-containing filtrate to generate precipitate, and filtering the precipitate to obtain solid tellurium dioxide; the arsenic and antimony filter residues are placed in a reaction device for vacuum distillation, and antimony trioxide and solid arsenic residues are obtained. In the recovery process, the tellurium and antimony content and the recovery rate are high, efficient tellurium and antimony recovery of the lead anode mud and harmless treatment of the red mud are facilitated, and the method is suitable for lead metallurgy and aluminum industry solid waste co-treatment and valuable metal recovery.

This invention discloses a method for in-situ growth of cadmium telluride on the surface of tungsten trioxide (TTO) and the resulting heterocomposite material. The method first prepares blue TTO rich in oxygen vacancies by irradiating TTO in formaldehyde solution with ultraviolet light. Then, utilizing the reducing properties of this blue TTO, it reacts with tellurium dioxide and a cadmium source in an alkaline aqueous solution, thereby growing cadmium telluride in situ on the surface of the blue TTO, forming a WO3 / CdTe heterocomposite material. This invention eliminates the need for an external reducing agent, utilizing the inherent properties of the carrier to drive the reaction, achieving in-situ chemical bonding between the two semiconductors and forming a tightly bonded heterojunction interface. The synthesis method of this invention effectively promotes the separation of photogenerated electrons and holes, significantly improves the photocurrent response and photocatalytic activity of the resulting heterocomposite material, and simultaneously enhances the composite material's resistance to photocorrosion, solving the problems of low charge separation efficiency of single WO3 and poor stability of single CdTe.

The invention provides Er-doped fluorine tellurium boron zinc laser glass based on zinc fluoride regulation and a preparation method thereof, and belongs to the field of laser glass. The Er-doped fluorine tellurium boron zinc laser glass based on zinc fluoride regulation and control provided by the invention is prepared from a matrix raw material and an erbium oxide doped raw material, the matrix raw material is prepared from the following components in percentage by mass: 67.5 to 77.5 percent of tellurium dioxide, 7 to 8 percent of B2O3, 8 to 12 percent of zinc oxide and 5 to 15 percent of zinc fluoride; the doping amount of the erbium oxide doped raw material is 0.7-0.8% of the total amount of substance of the matrix raw material. The Er-doped fluorine tellurium boron zinc laser glass based on zinc fluoride regulation and control provided by the invention has good thermal stability and light transmission, and also has better luminous efficiency.

The invention discloses a method for preparing superfine tellurium dioxide by using a composite catalysis-dispersion system. The preparation method of the superfine tellurium dioxide comprises the following steps: uniformly mixing tellurium powder, a composite dispersant and a catalytic promoter to obtain a mixture; under a protective atmosphere, adding a nitric acid solution into the mixture in sections, filtering after the reaction is finished, and collecting filtrate; and adding ammonia water into the filtrate, adjusting the pH value to 4.6 + / -0.02, carrying out standing precipitation, carrying out multi-stage filtration and washing on the precipitate, and carrying out freeze drying and crushing. Nitrate ions are adsorbed by surface modified nano silicon dioxide, a local high-concentration oxidation area is formed on the surface of tellurium powder, and the oxidation dissolution reaction rate of the tellurium powder is remarkably increased; the nano silicon dioxide and the composite dispersing agent have a synergistic effect, so that particle aggregation is effectively inhibited, and the dispersity is improved. The average particle size of the obtained product is less than or equal to 250nm, the particle size distribution standard deviation is less than or equal to 40nm, and the purity is more than or equal to 99.8%, which is superior

The invention belongs to the technical field of metallurgy, and particularly relates to a method for arsenic-tellurium synergistic short-distance recovery and valuable metal enrichment in arsenic-alkali residues, which comprises the following steps: mixing the arsenic-alkali residues with a sodium hydroxide solution, introducing oxygen, and carrying out oxygen pressure alkaline leaching at the pressure of 0.2-0.4 MPa and the temperature of 115-135 DEG C to obtain conversion liquid and conversion residues; s2, mixing the conversion slag obtained in the step S1 with a vulcanizing agent and a sodium hydroxide solution, and performing vulcanization leaching at 75-95 DEG C to obtain leachate and leaching slag; and S3, mixing the conversion liquid obtained in the step S1 with the leaching liquid obtained in the step S2, adjusting the pH value to 5.0-6.0, and reacting to obtain crude tellurium dioxide and arsenic-containing wastewater. According to the method, efficient dissociation of tellurium in the arsenic alkali residues and synchronous solidification of arsenic are achieved through a mild oxygen pressure alkaline leaching-enhanced alkaline vulcanization leaching synergistic process, and synergistic separation and short-distance recovery of arsenic and tellurium are achieved.

This invention discloses an in-situ synthesis method for tungsten trioxide ternary nanoheterojunction materials, comprising: hydrothermal synthesis of tungsten trioxide nanorods; conversion of tungsten trioxide into oxygen-vacancy-rich blue tungsten trioxide by ultraviolet irradiation and formaldehyde treatment; utilizing its own reducing properties, reacting with tellurium dioxide and cadmium source in alkaline aqueous solution to grow cadmium telluride in situ, obtaining a WO3 / CdTe binary heterojunction; further, after surface activation by ultraviolet irradiation and formaldehyde treatment of the obtained binary material, adding chloroauric acid solution, controlling the amount of gold source to ensure that the Au loading is 3%~10% of WO3 / CdTe by mass, and growing gold nanoparticles in situ to obtain the Au / WO3 / CdTe ternary heterojunction material. This invention eliminates the need for external reducing agents, achieves in-situ chemical bonding between multiple components, constructs a compact ternary heterostructure, and significantly improves photogenerated charge separation efficiency and photoelectrochemical performance.