3 results about "Tellurate" patented technology

This invention discloses a rare-earth element-doped tellurate scintillation glass thin film, its preparation method, and its applications. It belongs to the field of materials science and technology, using tellurate glass as a substrate and uniformly co-doping with Eu. 3+ Ions and Yb 3+ Ions; the tellurate scintillation glass film has a thickness of approximately 80 nm to 200 nm. The tellurate scintillation glass film obtained by this invention has a uniform thickness and is defect-free, exhibiting high efficiency in Eu scintillation. 3+ →Yb 3+ Its energy down-conversion properties enable it to be used as a near-infrared luminescent or down-conversion material, and it has superior performance potential in areas such as serving as a spectral conversion layer to improve the light response of silicon-based solar cells or as a near-infrared micro scintillator.

This invention discloses a method for improving the Raman gain coefficient of tellurate glass. By introducing Ga2O3 into a TeO2-BaF2-Y2O3 tellurate glass matrix, Ga ions enter the glass network and form [GaO4] tetrahedral structural units. These Ga ions then form a Te-O-Ga connection structure with the tellurium oxygen structural units through bridging oxygen bonds, thereby controlling the glass network structure and increasing the proportion of non-bridging oxygen. Raman spectroscopy results show that at 789 cm⁻¹... ‑1 The Te-O-Te vibration peak is enhanced at 480 cm⁻¹. ‑1 Vibrational characteristic peaks associated with the Te-O-Ga structure appear at a certain point. A peak intensity ratio evaluation function is constructed to quantitatively evaluate the glass structure, thereby obtaining tellurate glass materials with high Raman gain coefficients. Through structural tuning, the synergistic enhancement of the two main Raman vibrational modes can be achieved, thus significantly improving the Raman gain coefficient of tellurate glass.

The present application belongs to the technical field of battery materials, and specifically relates to a modified high-nickel ternary positive electrode material, and a preparation method therefor and the use thereof. The preparation method for a modified high-nickel ternary positive electrode material provided by the present application comprises the following steps: 1) mixing a lithium source, a precursor, a tellurium source and a divalent metal compound, and subjecting same to first calcination, so as to obtain a first calcined product; (2) dissolving a tellurate in an organic solvent, mixing and grinding the resulting tellurate organic solvent solution and the first calcined product obtained in step (1), and then subjecting same to second calcination to obtain a second calcined product, wherein the tellurate is selected from at least one of potassium tellurite and sodium tellurite; and (3) washing the second calcined product obtained in step (2) with water, mixing same with boric acid, and subjecting the mixture to third calcination, so as to obtain the modified high-nickel ternary positive electrode material. Through the specific preparation method and the synergistic effect among the steps in the present application, the resulting modified high-nickel ternary positive electrode material has a good specific capacity, initial Coulombic efficiency and cycling performance.