10 results about "Tellurate" patented technology

The invention discloses a dual-wavelength microsphere laser based on tri-doped rare earth ions and a preparation method thereof, the dual-wavelength microsphere laser based on tri-doped rare earth ions comprises a silica fiber, the middle part of the silica fiber is provided with a conical region; the pump light source is arranged at one end of the silica fiber; the erbium, holmium and ytterbium tri-doped tellurate glass microspheres are arranged in the conical region; pump light emitted by the pump light source is guided to the conical region through the single-mode optical fiber and is optically coupled with the erbium-holmium-ytterbium tri-doped tellurate glass microsphere; in the erbium-holmium-ytterbium triple-doped tellurate glass microspheres, infrared-transmitting tellurate glass is used as a matrix, and the doping amount of an erbium element is 0.11%, the doping amount of a holmium element is 0.22%, and the doping amount of an ytterbium element is 0.80% in percentage by mass. According to the dual-wavelength microsphere laser based on the three-doped rare earth ions, efficient and stable dual-wavelength laser output is achieved.

The invention provides a lead titanium tellurate second-order nonlinear optical crystal and a preparation method and application thereof, and belongs to the technical field of optical crystal materials. The compound is prepared by a solid-phase synthesis method and a fluxing agent method, and the preparation method comprises the step of growing the titanium lead tellurate nonlinear optical crystal by adopting the fluxing agent method. The obtained product has the advantages of large frequency-doubled effect, large optical band gap, wide transmission range, stable physical and chemical properties and difficulty in deliquescence, and can be used for preparing near-intermediate infrared nonlinear optical frequency conversion devices.

The invention discloses a method for extracting tellurium from a sodium tellurite solution through electrodeposition, and belongs to the technical field of non-ferrous metal hydrometallurgy. The method comprises the following steps: dissolving crude tellurium dioxide in a sodium hydroxide solution at 60-90 DEG C to prepare a sodium tellurite electrolyte containing 200-240 g / L of tellurium and 90-110 g / L of sodium hydroxide; in the electrodeposition process, a composite additive composed of sodium ascorbate, pentasodium diethylenetriamine pentaacetate, sodium citrate and polyvinylpyrrolidone is synchronously added into the electrolyte. And carrying out electrodeposition for 14-15 days under the conditions that the current density is 40-60A / m, the voltage is 15-30V and the temperature is 15-30 DEG C. Through the synergistic effect of the composite additive, tellurite radicals in the anode region are remarkably inhibited from being oxidized into insoluble sodium tellurate, heavy metal impurity ions in the electrolyte are strongly complexed, and therefore the direct recovery rate of tellurium is increased to 90% or above while the better current efficiency is kept, and the purity of the obtained tellurium ingot reaches 99.95% or above.

The invention relates to tellurate glass for a temperature sensor and a preparation method of the tellurate glass, and belongs to the technical field of optical luminescent materials. TeO2, ZnO, ZnF2 and Gd2O3 are used as matrixes of the tellurate glass, Er2O3 and YbF3 are doped, and the preparation method comprises the following steps: grinding and heating the raw materials, annealing and polishing. The prepared tellurate glass has low phonon energy, high chemical stability, excellent thermal stability and high rare earth ion solubility. More importantly, a specific rare earth ion pair in the glass can generate two fluorescence emission peaks of which the intensity is sensitively changed along with the temperature under the pumping of a specific wavelength (such as 980nm), and high-precision temperature sensing can be realized by monitoring the fluorescence intensity ratio of the two fluorescence emission peaks. The preparation process is simple, the cost is low, and the obtained glass material has a wide application prospect in the field of non-contact optical temperature sensors.

This invention discloses a rare-earth element-doped tellurate scintillation glass thin film, its preparation method, and its applications. It belongs to the field of materials science and technology, using tellurate glass as a substrate and uniformly co-doping with Eu. 3+ Ions and Yb 3+ Ions; the tellurate scintillation glass film has a thickness of approximately 80 nm to 200 nm. The tellurate scintillation glass film obtained by this invention has a uniform thickness and is defect-free, exhibiting high efficiency in Eu scintillation. 3+ →Yb 3+ Its energy down-conversion properties enable it to be used as a near-infrared luminescent or down-conversion material, and it has superior performance potential in areas such as serving as a spectral conversion layer to improve the light response of silicon-based solar cells or as a near-infrared micro scintillator.

This invention discloses a method for improving the Raman gain coefficient of tellurate glass. By introducing Ga2O3 into a TeO2-BaF2-Y2O3 tellurate glass matrix, Ga ions enter the glass network and form [GaO4] tetrahedral structural units. These Ga ions then form a Te-O-Ga connection structure with the tellurium oxygen structural units through bridging oxygen bonds, thereby controlling the glass network structure and increasing the proportion of non-bridging oxygen. Raman spectroscopy results show that at 789 cm⁻¹... ‑1 The Te-O-Te vibration peak is enhanced at 480 cm⁻¹. ‑1 Vibrational characteristic peaks associated with the Te-O-Ga structure appear at a certain point. A peak intensity ratio evaluation function is constructed to quantitatively evaluate the glass structure, thereby obtaining tellurate glass materials with high Raman gain coefficients. Through structural tuning, the synergistic enhancement of the two main Raman vibrational modes can be achieved, thus significantly improving the Raman gain coefficient of tellurate glass.

The invention provides a magnesium-aluminum-based double hydroxide efficient adsorption material constructed between doped ions and a preparation method and application of the magnesium-aluminum-based double hydroxide efficient adsorption material, and relates to the technical field of wastewater treatment. The doped ions comprise La < 3 + > or Fe < 3 + >. According to the invention, the shape memory function of the roasted material is utilized, in the dynamic recovery process of the structure, doped ions are accurately constructed in the interlayer domain of the re-formed LDH in the form of high-activity hydroxyl complexation anions, so that the performance of the LDH is improved. Therefore, the pollutants such as tellurate, tellurite or polonium can be directly and fully contacted with specific active sites exposed in the interlayer channel, and efficient capture is realized through strong ion exchange and inner layer complexation, so that the adsorption capacity is remarkably improved.

The present application belongs to the technical field of battery materials, and specifically relates to a modified high-nickel ternary positive electrode material, and a preparation method therefor and the use thereof. The preparation method for a modified high-nickel ternary positive electrode material provided by the present application comprises the following steps: 1) mixing a lithium source, a precursor, a tellurium source and a divalent metal compound, and subjecting same to first calcination, so as to obtain a first calcined product; (2) dissolving a tellurate in an organic solvent, mixing and grinding the resulting tellurate organic solvent solution and the first calcined product obtained in step (1), and then subjecting same to second calcination to obtain a second calcined product, wherein the tellurate is selected from at least one of potassium tellurite and sodium tellurite; and (3) washing the second calcined product obtained in step (2) with water, mixing same with boric acid, and subjecting the mixture to third calcination, so as to obtain the modified high-nickel ternary positive electrode material. Through the specific preparation method and the synergistic effect among the steps in the present application, the resulting modified high-nickel ternary positive electrode material has a good specific capacity, initial Coulombic efficiency and cycling performance.

The invention provides thulium-doped tellurate glass as well as a preparation method and application thereof, and belongs to the technical field of luminescent glass. In the thulium-doped tellurate glass provided by the invention, boron can form topological units of [BO3] and [BO4], so that the density and refractive index of the tellurate glass and the complexity of a rare earth ion coordination environment are improved; bismuth utilizes the special electronic structure and the low-valence luminescence characteristic of bismuth to promote the laser glass to emit light at the nearly 1.8 mu m wave band; zinc ions are combined with free oxygen to form [ZnO4] and [ZnO6], and then participate in the formation of a glass network, so that the density of the glass is further improved, and the formation of zinc-oxygen tetrahedrons and zinc-oxygen hexahedrons enables network bond angles to be twisted, opened and closed, so that more coordination environments are provided for rare earth ions, and the luminous intensity of the rare earth ions is improved; by controlling the doping amount of thulium, the luminescent characteristic of thulium ions can be fully played, so that the glass has higher fluorescence intensity.

The application discloses a trivalent chromium passivation agent for galvanized zinc which can replace hexavalent chromium color passivation, and a preparation method thereof. The trivalent chromium passivation agent comprises the following components in parts by weight: 80-120 parts of trivalent chromium salt; 10-20 parts of other metal salt; 5-10 parts of color adjusting agent; 30-40 parts of oxidizing agent; 10-20 parts of film forming promoter; 10-20 parts of complexing agent; 1-5 parts of wetting agent; 1-5 parts of inhibitor; and a certain amount of deionized water. The color adjusting agent obtained by compounding dimethyl selenium, strontium oxalate and titanium tellurate is added in the trivalent chromium passivation agent for galvanized zinc, and selenium, strontium, tellurium, titanium and other substances in the color adjusting agent are filled in the skeleton of the passivation film, so that the absorption, reflection and diffuse reflection of the passivation film to incident light are changed, thereby achieving the purpose of adjusting the color of the passivation film. The galvanized zinc part treated by the trivalent chromium passivation agent has a bright passivation film color which is almost consistent with that of the hexavalent chromium color passivation.