131 results about "Electron device" patented technology

An organic electroluminescence device includes an anode, a cathode, and an emitting region interposed between the anode and the cathode. The emitting region includes a first sensitizing layer and a first emitting layer. The first sensitizing layer contains a first host material and a first sensitizing material; and the first emitting layer contains a second host material and a first luminescent compound. The first host material and the second host material are mutually different; and the first sensitizing material and the first luminescent compound are mutually different. The lowest singlet energy S1(G1) and the energy gap T77K(G1) at 77K of the first sensitizing material satisfy (Numerical Formula 1): ΔST(G1)=S1(G1)−T77K(G1)<0.5 eV.

A display device includes a circuit layer, and light-emitting devices electrically connected to the circuit layer. Each of the light-emitting devices includes pixel electrode, an optical compensation layer, a light-emitting portion and a counter electrode. The pixel electrodes of the light-emitting devices include a first pixel electrode, a second pixel electrode and a third pixel electrode. The optical compensation layers of the light-emitting devices cover each of the first pixel electrode and the second pixel electrode among the first pixel electrode, the second pixel electrode and the third pixel electrode. A thickness of the optical compensation layer covering the first pixel electrode is greater than a thickness of the optical compensation layer covering the second pixel electrode.

This application provides a collector, a traveling wave tube (TWT), and an electronic device, relating to the field of TWT technology. The TWT includes a slow-wave structure and a collector; the end of the slow-wave structure includes a transition channel corresponding to the electron beam; the collector includes multiple stages of sequentially stepped-down electrodes; the end of the first stage electrode in the multiple stages of sequentially stepped-down electrodes is located within the transition channel; or, the end of the first stage electrode is inclined towards the cavity of the collector at a first tilt angle along the axis of the electron beam, the first tilt angle being determined according to the velocity of the electron beam. The technical solution provided by the embodiments of this application enables the collector to simultaneously achieve both low peak backflow rate and high efficiency of deep backflow collectors.

An optical sensor comprises a light-emitting element configured to emit light in a region where an object is present; a light-receiving element configured to receive reflected light from the object; a generation unit configured to generate a histogram indicating a relationship between a time from emission of the light by the light-emitting element to reception of the reflected light by the light-receiving element and an intensity of the reflected light received by the light-receiving element; a first calculation unit configured to calculate skewness of the histogram; and a second calculation unit configured to calculate a distance between the optical sensor and the object with reference to the histogram and the skewness.

The embodiment of the invention discloses a two-stage negative impedance electromagnetic shunt damper optimization method and related equipment, and the method comprises the steps: building a two-degree-of-freedom linear system kinetic model and a two-degree-of-freedom linear system kinetic equation, and deducing a force transmission rate analytical expression of a two-degree-of-freedom linear system; performing parameter optimization calculation on the two-stage negative impedance electromagnetic shunt damper based on the expression to obtain optimal parameters; and designing the two-stage negative impedance electromagnetic shunt damper according to the optimal parameters. The method can solve the problems that in the design process, inductance, resistance and rigidity parameters are difficult to balance, and design efficiency is low, can be suitable for multi-objective optimization design of the negative impedance electromagnetic shunt damper, has the advantages of being high in calculation efficiency, good in convergence and uniform in solution set distribution, and has good application prospects. The damper which is low in power, simple in electronic equipment, small in mass and good in vibration isolation performance can be designed easily, and hardware support is provided for micro-vibration suppression of spacecrafts. The method is widely applied to the technical field of micro-vibration suppression of spacecrafts.

A vibrationally enhanced fluorescence microscopy system includes a narrowband pulsed mid-infrared laser configured to excite selected chemical bond vibrations in a sample. A continuous-wave visible laser is coaligned with the mid-infrared laser and configured to induce fluorescence from at least one fluorescent reporter bound to the sample. An external pulse generator temporally synchronizes emission of the mid-infrared pulses with emission of the visible laser. A reflective objective is arranged to deliver the mid-infrared pulses to a focal plane within the sample. A water-immersion objective is coaxially aligned with the reflective objective and arranged to collect the fluorescence from the focal plane. A photon-counting detector is coupled to receive the collected fluorescence. Control electronics are configured to output a vibrational-contrast signal derived from counts produced by the photon-counting detector.

A light-emitting device with a long lifetime is provided. A light-emitting device with high reliability is provided. The light-emitting device includes a first electrode, a first light-emitting layer, a first layer, a second layer, a third layer, a second light-emitting layer, and a second electrode stacked in this order. The first layer contains a first organic compound and a first substance. The second layer contains a second organic compound. The third layer contains a second substance. The first organic compound is an electron-transport material. The first substance is a metallic salt, a metal oxide, or an organometallic salt. The second organic compound is an electron-transport material. The second substance is an electron-injection material. The second layer has a lower concentration of the first substance than the first layer.

The invention discloses a hot cathode for a vacuum device and a preparation method and application of the hot cathode. The structure of the hot cathode comprises a cathode substrate and an emission active material combined on the cathode substrate; wherein the cathode substrate is of a porous structure, and the cathode substrate is made of a mixture of chromic oxide and tungsten; and the emission active material is scandium-containing barium aluminate. According to the scheme, the problem that the requirement of a current high-power vacuum electronic device for a low-working-temperature and high-emission-current-density electron source cannot be met is well solved.

A single-photon avalanche diode unit is provided, which includes at least one main junction and a barrier region. A size of the main junction is smaller than a preset size; a polarity of the barrier region is the same as that of a first well region, and the first well region is a well region of the main junction away from an electrode of the single-photon avalanche diode unit in a depth direction. The barrier region is in the same layer as the first well region in the depth direction and is arranged around the first well region; and the barrier region extends outward to a hole conductive region of the single-photon avalanche diode unit, and a polarity of the hole conductive region is the same as that of the first well region.

The principal purpose of the present technology is to provide a technique for suppressing warpage of a wafer.　The present technology provides a light-emitting element (1) having: a plurality of mesa portions (41) that emit light; an insulating layer (18) disposed between the adjacent mesa portions (41); and an internal space (4) formed in a part of each insulating layer (18). The present technology also provides a driving element (2) having: a plurality of electrodes (22) electrically connected to respective ones of the plurality of mesa portions (41) of the light-emitting element (1), and for driving the light-emitting element (1); an insulating layer (21) disposed between the adjacent electrodes (22); and an internal space (4) formed in a part of each insulating layer (21).

Disclosed is a single photon detection device comprises a photodetection layer including a first surface and a second surface positioned opposite to each other. The photodetection layer comprises a first well having a first conductivity type, diffraction patterns positioned between the second surface and the first well, the diffraction patterns configured to receive incident light and diffract the incident light such that first-order diffracted light has a highest diffraction efficiency in a red or near-infrared wavelength band; a highly doped region positioned between the first surface and the first well and having a second conductivity type different from the first conductivity type, and a contact region electrically connected to the first well and having the first conductivity type.

Light-emitting element, comprising: a pair of electrodes; and a first light-emitting layer and a second light-emitting layer between the pair of electrodes, where the second light-emitting layer is in contact with the first light-emitting layer, wherein the first light-emitting layer comprises a first phosphorescent compound, a first organic compound and a second organic compound, wherein the second light-emitting layer comprises a second phosphorescent compound, the first organic compound and the second organic compound, wherein the first organic compound and the second organic compound form an exciplex, the first organic compound is a nitrogen-containing heteroaromatic compound, where the second organic compound is a π-electron-rich heteroaromatic compound or an aromatic amine compound, where a peak of an emission spectrum of the first phosphorescent compound has a shorter wavelength than a peak of an emission spectrum of the second phosphorescent compound, and where the difference between the energy of a peak in an emission spectrum of the exciplex and the energy of a peak in an absorption band on the longest wavelength side in an absorption spectrum of the first phosphorescent compound is 0.2 eV or less.

To provide a light-emitting element with high emission efficiency and low driving voltage. The light-emitting element includes a guest material and a host material. A LUMO level of the guest material is lower than a LUMO level of the host material. An energy difference between the LUMO level and a HOMO level of the guest material is larger than an energy difference between the LUMO level and a HOMO level of the host material. The guest material has a function of converting triplet excitation energy into light emission. An energy difference between the LUMO level of the guest material and the HOMO level of the host material is larger than or equal to energy of light emission of the guest material.

The present invention relates to an organic electrical element comprising: a first electrode; a second electrode; and an organic material layer with a light-emitting layer formed between the first electrode and the second electrode;wherein the organic material layer comprises a hole transport layer formed between the first electrode and the light-emitting layer and a light-emission auxiliary layer formed between the hole transport layer and the light-emitting layer, wherein the light-emission auxiliary layer comprises a composition containing a mixture of a compound represented by Formula 1 below and a compound represented by Formula 2 below, and wherein the hole transport layer comprises a compound represented by Formula 3 below, whereby the driving voltage of the organic electrical element can be reduced and the light output and lifetime improved.

Light-emitting device comprising: an anode; a cathode; and an EL layer between the anode and the cathode, wherein the EL layer comprises a first layer, a second layer, a third layer, a light-emitting layer and a fourth layer in that order from an anode side, where the first layer is in contact with the anode, where the fourth layer is in contact with the light-emitting layer, wherein the first layer contains a first organic compound and a second organic compound, the second layer contains a third organic compound, the third layer contains a fourth organic compound, wherein the light-emitting layer includes a fifth organic compound and a sixth organic compound, the fourth layer contains a seventh organic compound and an eighth substance, wherein the first organic compound has an electron-accepting property with respect to the second organic compound, where the fifth organic compound is an emission center substance, where the HOMO level of the second organic compound is higher than or equal to -5.7 eV and lower than or equal to -5.4 eV, and the eighth substance is an organic complex.

A photosensitive composition of the present invention comprises hollow silica particles, and comprises a resin comprising repeating units represented by chemical formula (1) and chemical formula (2), so as to enable low temperature (100°C or below) curing, and thus can prevent damage to an organic element layer, which is caused by heat during processing. Therefore, provided is a pattern or a film, which is a light-shielding layer of an organic light-emitting display device and has excellent resolution while implementing both light-shielding properties and low reflection properties, an organic light-emitting display device comprising the light-shielding layer, and an electronic device comprising the organic light-emitting display device can be provided.

A display device having a long lifetime is provided. A large-sized display device is provided. A display device includes a first light-emitting device and a second light-emitting device. The first light-emitting device includes a hole-injection layer, a first light-emitting layer, and an electron-transport layer. The second light-emitting device includes a second light-emitting layer. The hole-injection layer contains a first compound and a second compound. The first light-emitting layer contains a third compound that emits light of a first color. The second light-emitting layer contains a fourth compound that emits light of a second color. The electron-transport layer contains a fifth compound. The first compound has a property of accepting electrons from the second compound. The second compound has a HOMO level higher than or equal to −5.7 eV and lower than or equal to −5.4 eV. The fifth compound has a HOMO level higher than or equal to −6.0 eV and an electron mobility higher than or equal to 1×10{circumflex over ( )}−7 cm{circumflex over ( )}2 / Vs and lower than or equal to 5×10{circumflex over ( )}−5 cm{circumflex over ( )}2 / Vs when the square root of electric field strength [V / cm] is 600.

Several lens assemblies eachi include seven lens elements (E1, E2, E3,E4, E5, E6 and E7) which are, in order from an object side to an image side along an optical path: a first lens element (E1)-seven

A display device includes: a pixel circuit layer including a first pixel circuit, a second pixel circuit, and a third pixel circuit that are disposed in a same row; a first light-emitting element configured to emit light of a first color, and including: a first pixel electrode on the pixel circuit layer and electrically connected to the first pixel circuit; and a first light-emitting layer on the first pixel electrode; a second light-emitting element configured to emit light of the first color, and including: a second pixel electrode on the pixel circuit layer and electrically connected to the second pixel circuit; and a second light-emitting layer on the second pixel electrode; a third light-emitting element configured to emit light of a second color different from the first color, and including: a third pixel electrode on the pixel circuit layer, electrically connected to the third pixel circuit.

A novel light-emitting device that is highly convenient, useful, or reliable is provided. The light-emitting device includes a second electrode over a first electrode with an EL layer therebetween. The EL layer includes at least a light-emitting layer, an electron-transport layer, and an electron-injection layer. The electron-transport layer is positioned over the light-emitting layer. An insulating layer is in contact with side surfaces of the light-emitting layer and the electron-transport layer. The electron-injection layer is positioned over the electron-transport layer. The electron-injection layer is in contact with the electron-transport layer and the insulating layer.

This camera module may comprise: a plurality of first sheet springs disposed opposite to each other in a first direction with respect to a lens; and a plurality of second sheet springs disposed opposite to each other in a second direction with respect to the lens.

The application discloses a gyrotron maturation debugging system and method, belongs to the technical field of microwave vacuum electron device testing and maturation, integrates the gas removal maturation, power measurement and protection of the gyrotron, and operates the cathode power supply and the anode power supply in a modulation mode with a settable total pulse width, modulation period and duty cycle, takes the titanium pump current as a vacuum feedback quantity and sets multiple threshold values, automatically reduces the duty cycle, shortens the wave emission time and increases the exhaust time when the titanium pump current exceeds the first threshold value, and automatically stops when the titanium pump current exceeds the second threshold value, so that the closed-loop control of the self-adaptive slowing down first and the protection shutdown later is formed; the water load calorimetry method is used in combination with the integral method to solve the thermal equilibrium problem under the short pulse, and the power calibration is completed in the same process; the wave-free protection is automatically switched according to the output power level, the threshold value is self-calibrated by the actually measured detection voltage in the high-power stage, and the protection is enabled; and the application can improve the flexibility, consistency and reliability of the gyrotron maturation, and significantly improve the maturation efficiency.

A display device capable of high-quality images can be provided. The display device includes a first light-emitting element, a second light-emitting element, and a gap. The first light-emitting element includes a first light-emitting layer and a first electron-injection layer over the first light-emitting layer, and the second light-emitting element includes a second light-emitting layer and a second electron-injection layer over the second light-emitting layer. The first light-emitting element is adjacent to the second light-emitting element. The gap is placed between the first electron-injection layer and first light-emitting layer and the second electron-injection layer and second light-emitting layer. The first electron-injection layer comprises a region projecting from the side surface of the first light-emitting layer, and the second electron-injection layer comprises a region projecting from the side surface of the second light-emitting layer.

This application provides a method for fabricating a fast recovery diode, a fast recovery diode, and an electronic device, relating to the field of semiconductor technology. The method for fabricating a fast recovery diode includes: providing a substrate, the substrate including a first surface and a second surface disposed opposite to each other; performing ion doping treatment on the substrate to form ion-doped regions on the first surface and the second surface; etching the first surface based on a predetermined etching region to form a first groove; wherein the depth of the first groove is greater than the thickness of the ion-doped region; the predetermined etching region is located at the center of the first surface; forming a passivation layer in the first groove; and performing metal evaporation on the first surface to form a first metal layer. This method not only reduces the conduction loss of the fast recovery diode, improves energy conversion efficiency, effectively suppresses reverse current, and reduces electromagnetic interference, but also enhances its resistance to avalanche breakdown energy and surge capability.

An organic electroluminescent element, wherein a first light-emitting unit, a first charge generation layer, a second light-emitting unit, a second charge generation layer, and a third light-emitting unit are included in this order from the anode side between an anode and a cathode, the second charge generation layer has an N layer on the anode side and a P layer on the cathode side, the third light-emitting layer includes a compound having blue fluorescent light-emitting properties, at least one of the first light-emitting layer and the second light-emitting layer includes a compound having blue fluorescent light-emitting properties, the third light-emitting unit further has a hole transport region between the second charge generation layer and the third light-emitting layer, the hole transport region is in contact with the second charge generation layer, and the thickness of the hole transport region is 5 nm or more and 40 nm or less, and is thinner than the thickness of the N layer.

Light-emitting device comprising: an anode (101), a first layer, a second layer, a third layer, a light-emitting layer (113), a fourth layer, and a cathode (102), wherein the first layer is arranged between the anode (101) and the second layer, wherein the second layer is arranged between the first layer and the third layer, wherein the third layer is arranged between the second layer and the light-emitting layer (113), wherein the light-emitting layer (113) is arranged between the third layer and the fourth layer, wherein the fourth layer is arranged between the light-emitting layer (113) and the cathode (102), wherein the first layer contains a first organic compound and a second organic compound, the second layer contains a third organic compound, the third layer contains a fourth organic compound, wherein the light-emitting layer (113) contains a fifth organic compound and a sixth organic compound, the fourth layer contains a seventh organic compound, where the first organic compound is an organic compound with a halogen group, where the fifth organic compound is an emission center substance, where the second organic compound and the third organic compound are the same substance, where the HOMO level of the second organic compound is higher than or equal to -5.7 eV and lower than or equal to -5.2 eV, where the electron mobility of the seventh organic compound is higher than or equal to 1 × 10 -7 cm 2 / Vs and less than or equal to 5 × 10-5 cm 2 / Vs is when a square root of an electric field strength is 600 [V / cm] 1 / 2 amounts, where the HOMO level of the fourth organic compound is lower than or equal to the HOMO level of the third organic compound, where the difference between the HOMO level of the third organic compound and the HOMO level of the fourth organic compound is less than or equal to 0.2 eV, and where the third organic compound is different from the fourth organic compound.

The application discloses an S-band high-power pulsed magnetron and belongs to the field of vacuum electron devices. The device comprises an anode assembly, a cathode assembly, an input assembly, an output assembly and a permanent magnet. The application adopts an axial output structure, improves the sizes and proportions of the anode and the cathode, simultaneously increases the anode voltage, adopts the permanent magnet to provide a constant magnetic field, and can output a pulsed microwave power of more than 100kW on the basis of a small size.

The invention relates to an organic light-emitting element, and a display device and an electronic device each including the organic light-emitting element. The organic light emitting element includes a first electrode, a hole injection layer on the first electrode, a hole transport layer on the hole injection layer, an emission layer on the hole transport layer and including an organic material, an electron transport layer on the emission layer, and a second electrode, the second electrode is directly on the electron transport layer and includes a conductive material other than an alkali metal and about 3 vol% to about 30 vol% of the alkali metal based on a total volume of 100 vol% of the second electrode.

A display device includes a substrate; a plurality of light-emitting elements disposed on the substrate, the light-emitting elements being arranged in a plurality of light emitting areas, which output light, respectively; an encapsulation layer disposed on the plurality of light-emitting elements; a first organic pattern disposed on the encapsulation layer and located between adjacent ones of the light emitting areas; a second organic pattern and a third organic pattern, which are disposed on the first organic pattern, spaced apart from each other, and between the adjacent ones of the light emitting areas; and a fourth organic pattern disposed on the first organic pattern, the second organic pattern and the third organic pattern, where a refractive index of the first organic pattern, a refractive index of the second organic pattern and a refractive index of the third organic pattern are each smaller than a refractive index of the fourth organic pattern.