196 results about "Electron device" patented technology

An organic electroluminescence device includes an anode, a cathode, and an emitting region interposed between the anode and the cathode. The emitting region includes a first sensitizing layer and a first emitting layer. The first sensitizing layer contains a first host material and a first sensitizing material; and the first emitting layer contains a second host material and a first luminescent compound. The first host material and the second host material are mutually different; and the first sensitizing material and the first luminescent compound are mutually different. The lowest singlet energy S1(G1) and the energy gap T77K(G1) at 77K of the first sensitizing material satisfy (Numerical Formula 1): ΔST(G1)=S1(G1)−T77K(G1)<0.5 eV.

A system and a method for controlling a power MOSFET for limiting electromagnetic interference from a load is provided. The system and method include a pulse-width-modulated (PWM) control voltage to operate the power MOSFET in accordance with its Ohmic region (linear mode). By operating the power MOSFET in its Ohmic region, the electromagnetic field generated by the load is reduced, without requiring a dedicated DC / DC converter that would otherwise increase the cost, size, and weight of the power electronics.

A display device includes a circuit layer, and light-emitting devices electrically connected to the circuit layer. Each of the light-emitting devices includes pixel electrode, an optical compensation layer, a light-emitting portion and a counter electrode. The pixel electrodes of the light-emitting devices include a first pixel electrode, a second pixel electrode and a third pixel electrode. The optical compensation layers of the light-emitting devices cover each of the first pixel electrode and the second pixel electrode among the first pixel electrode, the second pixel electrode and the third pixel electrode. A thickness of the optical compensation layer covering the first pixel electrode is greater than a thickness of the optical compensation layer covering the second pixel electrode.

The present disclosure relates to patterning in a device having an organic light emitting diode display and a sensor. The electronic device may include a display and an optical sensor formed below the display. A pixel removal area on the display may at least partially overlap with the sensor. The pixel removal area may include a plurality of non-pixel areas, each non-pixel area not containing a thin film transistor. The plurality of non-pixel areas are configured to increase the transmittance of light through the display to the sensor. In addition to removing the thin film transistors in the pixel removal area, additional layers in the display stack structure may also be removed. Specifically, the cathode layer, polyimide layer and / or substrate in the display stack structure may be patterned to have openings in the pixel removal area. The polarizer may be bleached in the pixel removal area to obtain additional transmittance gain. The cathode layer may be removed using laser ablation using a point laser or blanket illumination.

A light-emitting device comprising a light-emitting layer between a pair of electrodes, wherein the light-emitting layer contains a first material, a second material and a third material, wherein the first material can convert the triplet excitation energy into light emission and has a five-membered ring framework, wherein the first material is a metal complex, wherein the second material can convert the singlet excitation energy into light emission and has a luminophore and five or more protecting groups, wherein the luminophore is a condensed aromatic ring or a condensed heteroaromatic ring, wherein the five or more protecting groups each independently comprise an alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms or a trialkylsilyl group having 3 to 12 carbon atoms, wherein the third material comprises a diazine framework or a triazine framework, and wherein a T1 level of the first material is higher than an S1 level of the second material.

This application provides a collector, a traveling wave tube (TWT), and an electronic device, relating to the field of TWT technology. The TWT includes a slow-wave structure and a collector; the end of the slow-wave structure includes a transition channel corresponding to the electron beam; the collector includes multiple stages of sequentially stepped-down electrodes; the end of the first stage electrode in the multiple stages of sequentially stepped-down electrodes is located within the transition channel; or, the end of the first stage electrode is inclined towards the cavity of the collector at a first tilt angle along the axis of the electron beam, the first tilt angle being determined according to the velocity of the electron beam. The technical solution provided by the embodiments of this application enables the collector to simultaneously achieve both low peak backflow rate and high efficiency of deep backflow collectors.

An optical sensor comprises a light-emitting element configured to emit light in a region where an object is present; a light-receiving element configured to receive reflected light from the object; a generation unit configured to generate a histogram indicating a relationship between a time from emission of the light by the light-emitting element to reception of the reflected light by the light-receiving element and an intensity of the reflected light received by the light-receiving element; a first calculation unit configured to calculate skewness of the histogram; and a second calculation unit configured to calculate a distance between the optical sensor and the object with reference to the histogram and the skewness.

The invention belongs to the technical field of vacuum electronic devices, and particularly relates to a dynode with an edge expansion type inner substrate and an electron multiplier comprising the dynode. The dynode comprises a grid mesh assembly, a base frame box and an edge expansion type inner substrate, and the inner substrate is located in the base frame box. The lining bottom comprises an arc-shaped side wall part, an upper wall, a lower wall and a bent part; the bent parts are arranged between the arc-shaped side wall part and the upper wall and between the arc-shaped side wall and the lower wall; the base frame box comprises a side wall, and an upper baffle and a lower baffle which are connected with the side wall; the arc-shaped side wall part of the lining bottom is attached to the side wall of the base frame box, the upper wall of the lining bottom is tightly attached to the upper baffle of the base frame box, and the lower wall of the lining bottom is tightly attached to the lower baffle of the base frame box. The inner substrate structure enables the electric field in the dynode to change, and especially the electric field intensity at the corners in the dynode, namely the area where the bent part is located, is obviously changed. The problem of low dynode electron collection efficiency is solved, and the gain of the electron multiplier is improved.

Vacuum electron devices (VEDs) are produced having a plurality of two-dimensional layers of various materials that are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together using brazing, diffusion bonding, assisted diffusion bonding, solid state bonding, cold welding, ultrasonic welding, and the like. The manufacturing process enables incorporation of metallic, magnetic, and ceramic materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability. The VEDs so produced include a combination of magnetic and electrostatic lenses for electron beam control.

The embodiment of the invention discloses a two-stage negative impedance electromagnetic shunt damper optimization method and related equipment, and the method comprises the steps: building a two-degree-of-freedom linear system kinetic model and a two-degree-of-freedom linear system kinetic equation, and deducing a force transmission rate analytical expression of a two-degree-of-freedom linear system; performing parameter optimization calculation on the two-stage negative impedance electromagnetic shunt damper based on the expression to obtain optimal parameters; and designing the two-stage negative impedance electromagnetic shunt damper according to the optimal parameters. The method can solve the problems that in the design process, inductance, resistance and rigidity parameters are difficult to balance, and design efficiency is low, can be suitable for multi-objective optimization design of the negative impedance electromagnetic shunt damper, has the advantages of being high in calculation efficiency, good in convergence and uniform in solution set distribution, and has good application prospects. The damper which is low in power, simple in electronic equipment, small in mass and good in vibration isolation performance can be designed easily, and hardware support is provided for micro-vibration suppression of spacecrafts. The method is widely applied to the technical field of micro-vibration suppression of spacecrafts.

A vibrationally enhanced fluorescence microscopy system includes a narrowband pulsed mid-infrared laser configured to excite selected chemical bond vibrations in a sample. A continuous-wave visible laser is coaligned with the mid-infrared laser and configured to induce fluorescence from at least one fluorescent reporter bound to the sample. An external pulse generator temporally synchronizes emission of the mid-infrared pulses with emission of the visible laser. A reflective objective is arranged to deliver the mid-infrared pulses to a focal plane within the sample. A water-immersion objective is coaxially aligned with the reflective objective and arranged to collect the fluorescence from the focal plane. A photon-counting detector is coupled to receive the collected fluorescence. Control electronics are configured to output a vibrational-contrast signal derived from counts produced by the photon-counting detector.

A light-emitting device with a long lifetime is provided. A light-emitting device with high reliability is provided. The light-emitting device includes a first electrode, a first light-emitting layer, a first layer, a second layer, a third layer, a second light-emitting layer, and a second electrode stacked in this order. The first layer contains a first organic compound and a first substance. The second layer contains a second organic compound. The third layer contains a second substance. The first organic compound is an electron-transport material. The first substance is a metallic salt, a metal oxide, or an organometallic salt. The second organic compound is an electron-transport material. The second substance is an electron-injection material. The second layer has a lower concentration of the first substance than the first layer.

The invention discloses a hot cathode for a vacuum device and a preparation method and application of the hot cathode. The structure of the hot cathode comprises a cathode substrate and an emission active material combined on the cathode substrate; wherein the cathode substrate is of a porous structure, and the cathode substrate is made of a mixture of chromic oxide and tungsten; and the emission active material is scandium-containing barium aluminate. According to the scheme, the problem that the requirement of a current high-power vacuum electronic device for a low-working-temperature and high-emission-current-density electron source cannot be met is well solved.

A single-photon avalanche diode unit is provided, which includes at least one main junction and a barrier region. A size of the main junction is smaller than a preset size; a polarity of the barrier region is the same as that of a first well region, and the first well region is a well region of the main junction away from an electrode of the single-photon avalanche diode unit in a depth direction. The barrier region is in the same layer as the first well region in the depth direction and is arranged around the first well region; and the barrier region extends outward to a hole conductive region of the single-photon avalanche diode unit, and a polarity of the hole conductive region is the same as that of the first well region.

The principal purpose of the present technology is to provide a technique for suppressing warpage of a wafer.　The present technology provides a light-emitting element (1) having: a plurality of mesa portions (41) that emit light; an insulating layer (18) disposed between the adjacent mesa portions (41); and an internal space (4) formed in a part of each insulating layer (18). The present technology also provides a driving element (2) having: a plurality of electrodes (22) electrically connected to respective ones of the plurality of mesa portions (41) of the light-emitting element (1), and for driving the light-emitting element (1); an insulating layer (21) disposed between the adjacent electrodes (22); and an internal space (4) formed in a part of each insulating layer (21).

Disclosed is a single photon detection device comprises a photodetection layer including a first surface and a second surface positioned opposite to each other. The photodetection layer comprises a first well having a first conductivity type, diffraction patterns positioned between the second surface and the first well, the diffraction patterns configured to receive incident light and diffract the incident light such that first-order diffracted light has a highest diffraction efficiency in a red or near-infrared wavelength band; a highly doped region positioned between the first surface and the first well and having a second conductivity type different from the first conductivity type, and a contact region electrically connected to the first well and having the first conductivity type.

Light-emitting element, comprising: a pair of electrodes; and a first light-emitting layer and a second light-emitting layer between the pair of electrodes, where the second light-emitting layer is in contact with the first light-emitting layer, wherein the first light-emitting layer comprises a first phosphorescent compound, a first organic compound and a second organic compound, wherein the second light-emitting layer comprises a second phosphorescent compound, the first organic compound and the second organic compound, wherein the first organic compound and the second organic compound form an exciplex, the first organic compound is a nitrogen-containing heteroaromatic compound, where the second organic compound is a π-electron-rich heteroaromatic compound or an aromatic amine compound, where a peak of an emission spectrum of the first phosphorescent compound has a shorter wavelength than a peak of an emission spectrum of the second phosphorescent compound, and where the difference between the energy of a peak in an emission spectrum of the exciplex and the energy of a peak in an absorption band on the longest wavelength side in an absorption spectrum of the first phosphorescent compound is 0.2 eV or less.

To provide a light-emitting element with high emission efficiency and low driving voltage. The light-emitting element includes a guest material and a host material. A LUMO level of the guest material is lower than a LUMO level of the host material. An energy difference between the LUMO level and a HOMO level of the guest material is larger than an energy difference between the LUMO level and a HOMO level of the host material. The guest material has a function of converting triplet excitation energy into light emission. An energy difference between the LUMO level of the guest material and the HOMO level of the host material is larger than or equal to energy of light emission of the guest material.

The present invention relates to an organic electrical element comprising: a first electrode; a second electrode; and an organic material layer with a light-emitting layer formed between the first electrode and the second electrode;wherein the organic material layer comprises a hole transport layer formed between the first electrode and the light-emitting layer and a light-emission auxiliary layer formed between the hole transport layer and the light-emitting layer, wherein the light-emission auxiliary layer comprises a composition containing a mixture of a compound represented by Formula 1 below and a compound represented by Formula 2 below, and wherein the hole transport layer comprises a compound represented by Formula 3 below, whereby the driving voltage of the organic electrical element can be reduced and the light output and lifetime improved.

Light-emitting device comprising: an anode; a cathode; and an EL layer between the anode and the cathode, wherein the EL layer comprises a first layer, a second layer, a third layer, a light-emitting layer and a fourth layer in that order from an anode side, where the first layer is in contact with the anode, where the fourth layer is in contact with the light-emitting layer, wherein the first layer contains a first organic compound and a second organic compound, the second layer contains a third organic compound, the third layer contains a fourth organic compound, wherein the light-emitting layer includes a fifth organic compound and a sixth organic compound, the fourth layer contains a seventh organic compound and an eighth substance, wherein the first organic compound has an electron-accepting property with respect to the second organic compound, where the fifth organic compound is an emission center substance, where the HOMO level of the second organic compound is higher than or equal to -5.7 eV and lower than or equal to -5.4 eV, and the eighth substance is an organic complex.

A photosensitive composition of the present invention comprises hollow silica particles, and comprises a resin comprising repeating units represented by chemical formula (1) and chemical formula (2), so as to enable low temperature (100°C or below) curing, and thus can prevent damage to an organic element layer, which is caused by heat during processing. Therefore, provided is a pattern or a film, which is a light-shielding layer of an organic light-emitting display device and has excellent resolution while implementing both light-shielding properties and low reflection properties, an organic light-emitting display device comprising the light-shielding layer, and an electronic device comprising the organic light-emitting display device can be provided.

A display device having a long lifetime is provided. A large-sized display device is provided. A display device includes a first light-emitting device and a second light-emitting device. The first light-emitting device includes a hole-injection layer, a first light-emitting layer, and an electron-transport layer. The second light-emitting device includes a second light-emitting layer. The hole-injection layer contains a first compound and a second compound. The first light-emitting layer contains a third compound that emits light of a first color. The second light-emitting layer contains a fourth compound that emits light of a second color. The electron-transport layer contains a fifth compound. The first compound has a property of accepting electrons from the second compound. The second compound has a HOMO level higher than or equal to −5.7 eV and lower than or equal to −5.4 eV. The fifth compound has a HOMO level higher than or equal to −6.0 eV and an electron mobility higher than or equal to 1×10{circumflex over ( )}−7 cm{circumflex over ( )}2 / Vs and lower than or equal to 5×10{circumflex over ( )}−5 cm{circumflex over ( )}2 / Vs when the square root of electric field strength [V / cm] is 600.

The present invention is entitled "Material Having Both Negative Spin Polarization and Negative Anisotropy." Aspects of the present disclosure generally relate to spintronic devices for use in magnetic media drives, magnetoresistive random access memory devices, magnetic sensors, or magnetic recording write heads. The spintronic device includes a multilayer structure having a negative anisotropy field and a negative spin polarization. The multilayer structure includes a plurality of layers, each of the plurality of layers including a first sublayer comprising Fe and a second sublayer comprising Co. At least one of the first sublayer and the second sublayer comprises one or more of Cr, V, and Ti. The first sublayers and the second sublayers alternate. The negative anisotropy field of the multilayer structure is between about -0.5 T and about -0.8 T, and the effective magnetization of the multilayer structure is between about 2.4 T and about 2.8 T.

The present application belongs to the field of microwave source technology in vacuum electron devices, and particularly relates to a same-voltage integrated double-frequency output magnetron for microwave oven, which is provided with two magnetrons with different frequencies and sizes, a heat dissipation structure and a magnetic circuit structure, the two magnetrons share one magnetic circuit structure, and the magnetron part and the heat dissipation structure are arranged in the magnetic circuit structure; the heat dissipation structure is provided with three parts of left heat dissipation fins, middle heat dissipation fins and right heat dissipation fins, wherein the left heat dissipation fins are arranged outside one magnetron and extend to the left, the right heat dissipation fins are arranged outside the other magnetron and extend to the right, and the two magnetrons are fixedly connected through the middle heat dissipation fins. In the present application, the same-voltage integrated double-frequency output magnetron is used, the frequencies of the two magnetrons are 2.45 GHz and 5.8 GHz respectively, the frequency difference is large, and the mutual coupling between the two outputs is small; and the double-frequency structure adopts the same voltage and is designed in an integrated manner, so that the structure is simple and suitable for various microwave ovens, and the placement problem of the two magnetrons and the heating uniformity problem are solved.

Several lens assemblies eachi include seven lens elements (E1, E2, E3,E4, E5, E6 and E7) which are, in order from an object side to an image side along an optical path: a first lens element (E1)-seven

An organic electroluminescence device includes an anode, a cathode, and an emitting layer disposed between the anode and the cathode. The emitting layer comprises a delayed fluorescent compound M2 having at least one deuterium atom and a compound M3 having at least one deuterium atom. A singlet energy S1(M2) of the compound M2 and a singlet energy S1(M3) of the compound M3 satisfy the relationship S1(M3)>S1(M2).

A display device includes: a pixel circuit layer including a first pixel circuit, a second pixel circuit, and a third pixel circuit that are disposed in a same row; a first light-emitting element configured to emit light of a first color, and including: a first pixel electrode on the pixel circuit layer and electrically connected to the first pixel circuit; and a first light-emitting layer on the first pixel electrode; a second light-emitting element configured to emit light of the first color, and including: a second pixel electrode on the pixel circuit layer and electrically connected to the second pixel circuit; and a second light-emitting layer on the second pixel electrode; a third light-emitting element configured to emit light of a second color different from the first color, and including: a third pixel electrode on the pixel circuit layer, electrically connected to the third pixel circuit.

A light-emitting element having a long lifetime is provided. A light-emitting element exhibiting high emission efficiency in a high luminance region is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains a first organic compound, a second organic compound, and a phosphorescent compound. The first organic compound is represented by a general formula (G0). The molecular weight of the first organic compound is greater than or equal to 500 and less than or equal to 2000. The second organic compound is a compound having an electron-transport property. In the general formula (G0), Ar1 and Ar2 each independently represent a fluorenyl group, a spirofluorenyl group, or a biphenyl group, and Ar3 represents a substituent including a carbazole skeleton.