336 results about "Electron device" patented technology

The invention discloses a preparation method and application of a novel ionized water gel-based moisture power generation material. The material is composed of a carbon coating fabric, ionized water gel and a patch metal electrode. Wherein the nano carbon black is used as a conductive filler of the hydrogel and can enhance electric energy output by promoting functional group dissociation and ion migration. The high-hygroscopicity sea salt in the hydrogel can enhance the capture and transmission capability of the material on water molecules in the atmosphere, and ensures the continuous power output capability of the moisture power generation material. Due to the design of the zigzag dry-wet interface, the wettability between the hydrogel and the carbon black coating can be improved, the moisture absorption rate is increased, the contact area is increased, and therefore the power generation power is improved. The metal patch electrode can ensure the stability of long-term power generation of the material, and can be customized to reduce the contact resistance. A moisture power generation device prepared from the material can be used as a passive energy supply device and is suitable for the fields of self-powered sensors, wearable electronic equipment and the like.

Methods of making molybdenum sulfide (MoS2) on a stretchable substrate are disclosed. The method includes magnetron sputtering MoS2 onto a stretchable substrate, such as a stretchable polymeric material, at low temperatures to form a film precursor, and illumination annealing the film precursor to form high quality MoS2. The illumination source may be a laser or other source of radiation. Also, two-dimensional nanoelectronic devices made by the methods and / or from the high quality MoS2 are disclosed.

An augmented-reality glasses comprises a plurality of panels of light emitters arranged to form an array of light emitters, wherein the array of light emitters includes light emitters of three colors; collimation optics for collimating light received from the array of light emitters; an optical coupler for receiving the collimated light; and a three-channel waveguide combiner for display of augmented-reality content to a wearer of the augmented-reality glasses, wherein each channel of the three-channel waveguide combiner respectively causes display of images of one color of the three colors generated by the light emitters. In some embodiments, the three-channel waveguide combiner is an optical waveguide with pupil replication and the optical coupler is an in-coupling optical element for coupling the collimated light into the three-channel waveguide combiner.

The invention relates to Device for quantum generation of random numbers comprising a light source (100) with fixed polarization and a polarization splitting element (110) optically connected thereto, having a first output (111) corresponding to vertical polarization and a second output (112) corresponding to horizontal polarization, and a first detector (131) optically connected to the first output (111) of the polarization splitting element (110) and a second detector (132) optically connected to the second output (112) of the polarization splitting element (110), a generating module (140) having a first input (141) connected to the output of the first detector (131) and a second input (142) connected to the output of the second detector (132), and a two-state output (143), the generating module (140) configured to generate on the two-state output (143) bits having a value of 1 upon receiving a signal on the first input (141) and bits having a value of 0 upon receiving a signal on the second input (142), characterized in that the light source (100) is connected to the polarization splitting element (110) via a multi-state polarization modulator (150) controlled by a digital or analog signal generated by a control electronics (160) connected to the multi-state polarization modulator (150).The invention comprises also a method for verification of privacy of random bit sequences generated by means of such a device.

To provide a novel light-emitting device, a light-emitting device with excellent luminous efficiency, a light-emitting device with excellent lifetime, or a light-emitting device with a low driving voltage.SOLUTION: A light-emitting device includes an anode, a cathode, and an EL layer present between the anode and the cathode. The EL layer has a light-emitting layer and an electron transport layer. The electron transport layer is present between the light-emitting layer and the cathode. The electron transport layer includes an electron transport material. The electron transport material is an organic compound having a first skeleton, a second skeleton, and a third skeleton. The first skeleton has a function of transporting electrons. The second skeleton has a function of accepting holes. The third skeleton has a single ring and a heterocyclic aromatic ring that is π electron deficient type.SELECTED DRAWING: Figure 1

The invention relates to the technical field of microelectronic manufacturing. The invention discloses a double-layer V-shaped nanowire structure which comprises a base layer arranged on a substrate and further comprises an upper-layer nanowire and a lower-layer nanowire which spatially grow on the base layer in a staggered mode, the upper-layer nanowire and the lower-layer nanowire are broken line type nanowires, and horizontal projections of break points of the broken line type nanowires and horizontal projections of break points of the broken line type nanowires and the lower-layer nanowire coincide and are located on the same plumb line. And the broken line type nanowire on the upper layer is broken at the break point to form a gap. According to the invention, two spatially staggered nanowires are grown by using single IPSLS, the lower layer continuous silicon nanowire is used as a conductive channel, and the upper layer gap nanowire is used as an adjustable depletion gate, so that the preparation process flow of the double-layer V-shaped nanowire structure is greatly simplified, and multiple quantum islands can be integrated to construct a compact quantum bit chain.

An organic electroluminescence device includes an anode, a cathode, and an emitting region interposed between the anode and the cathode. The emitting region includes a first sensitizing layer and a first emitting layer. The first sensitizing layer contains a first host material and a first sensitizing material; and the first emitting layer contains a second host material and a first luminescent compound. The first host material and the second host material are mutually different; and the first sensitizing material and the first luminescent compound are mutually different. The lowest singlet energy S1(G1) and the energy gap T77K(G1) at 77K of the first sensitizing material satisfy (Numerical Formula 1): ΔST(G1)=S1(G1)−T77K(G1)<0.5 eV.

A system and a method for controlling a power MOSFET for limiting electromagnetic interference from a load is provided. The system and method include a pulse-width-modulated (PWM) control voltage to operate the power MOSFET in accordance with its Ohmic region (linear mode). By operating the power MOSFET in its Ohmic region, the electromagnetic field generated by the load is reduced, without requiring a dedicated DC / DC converter that would otherwise increase the cost, size, and weight of the power electronics.

Methods and systems are provided for controlling an electron beam generated by an X-ray tube assembly including a unipolar cathode with a long cable between driving electronics of the cathode and the X-ray tube. A voltage supplied to a gridding electrode of the cathode is controlled by a multi-stage switching unit including a first control circuit and a second control circuit. A bias voltage for switching the cathode on is generated by a high precision voltage source of the second control circuit, and a gridding voltage for switching the cathode off is generated by voltage sources of the first control circuit. A time taken to transition between the gridding voltage and the bias voltage is advantageously reduced by decreasing the supplied voltage to a common voltage (e.g., 0 V) in a first step, and then increasing the supplied voltage to the bias voltage or the gridding voltage in a second step.

To provide an organic electroluminescent device that emits light with a long life.SOLUTION: In an organic electroluminescent device 1A, an organic layer 10A includes one or more layers, and at least one layer (e.g., an emitting layer 5) of the layers included in the organic layer 10A contains a first material and a second material, the first material includes at least one compound selected from the group consisting of compounds represented by the formula (11) and compounds represented by the formula (12), and the compounds represented by the formula (11) and the formula (12) are each independently a delayed fluorescent compound, and the second material includes a compound represented by the following formula (2).SELECTED DRAWING: Figure 1

A color mixing circuit for light sources comprising a power supply module, a first light source module, a second light source module, a first resistance module, a second resistance module, and a circuit gating module; the first light source module is respectively connected to the power supply module and the circuit gating module; the first light source module is further connected to the circuit gating module through the first resistance module; the second light source module is respectively connected with the power supply module and the circuit gating module; the second light source module is further connected to the circuit gating module through the second resistance module; the circuit gating module is also connected to the power supply module; the first light source module and the second light source module are configured to emit light.

The driving voltage of a light-emitting device is lowered to improve the emission efficiency. The light-emitting device includes a first electrode, a second electrode, a light-emitting layer, and a first layer. The light-emitting layer is positioned between the first electrode and the second electrode. The first layer is positioned between the first electrode and the light-emitting layer. The light-emitting layer contains a light-emitting substance. The first layer contains a first organic compound. The HOMO level of the first organic compound is lower than or equal to −5.40 eV. The first organic compound provides a light-emitting device represented by General Formula (G1) below (Note that Q is O or S in General Formula (G1). One of A and B represents a group represented by General Formula (g1) above, and the other of A and B and R1 to R31 each independently represent any of H, D, an alkyl group, a cyclic saturated hydrocarbon group, an alkoxy group, a cyano group, halogen, a haloalkyl group, and an aromatic hydrocarbon group. Note that R9 and R10 may be bonded to each other to form a spirocyclic structure).

Provided are a metal element-doped metal oxide dispersion liquid and a method for producing the same, the metal element-doped metal oxide dispersion liquid being excellent in dispersibility of the metal element-doped metal oxide particles, and it being possible to satisfy characteristics (flatness, defect amount, PL intensity of quantum dots when laminated as an ETL on a quantum dot layer, charge transport properties, etc.)　The metal element-doped metal oxide dispersion liquid includes metal element-doped metal oxide particles and a solvent as a dispersion medium, and has a metal cation content calculated from Li, Na, K, and Ca included in the solvent of 1 to 2700 ppm, the metal oxide particles being particles having zinc oxide as a main component, the metal element doped into the particles having zinc oxide as a main component including one or more elements selected from Al, Mg, Li, Ca, Ga, and In, and the doped metal element being included in a ratio of 2-20 mol% with respect to elemental zinc.

A memory device (e.g., a high-bandwidth memory (HBM) device) with multiple physical interfaces (PHYs) is disclosed. The memory device includes a base semiconductor die having a first physical interface (PHY) arranged in accordance with a Joint Electron Device Engineering Council (JEDEC) standard and a second PHY arranged differently from the first PHY and electrically disconnected from the first PHY. The base semiconductor die further includes first contacts disposed at a first side of the base semiconductor die and second contacts disposed at a second side of the base semiconductor die opposite the first side. The first contacts and the second contacts couple with a first one of the first PHY and the second PHY. The memory device further includes one or more memory dies coupled with the base semiconductor die through the second contacts.

The invention discloses a Schottky diode with a transverse structure, an in-situ sample preparation method and a processing technology. The cathode and the anode of the Schottky diode are in the same plane, the cathode ohmic contact layer is arranged on the periphery of the structure, the anode Schottky metal layer is arranged in the center of the structure, and the AlGaN barrier layer and the GaN substrate layer are sequentially arranged between the cathode ohmic contact layer and the anode Schottky metal layer. According to the in-situ sample preparation method, the FIB sample preparation technology and the selected area circuit breaking method are adopted to complete connection of the sample and the chip, the failure behavior of the device can be observed in real time under a transmission electron microscope, and the processing technology achieves effective isolation of the anode and the two-dimensional electron device through silicon oxide in the sample preparation process. Meanwhile, silicon oxide isolation can prevent short circuit of a power supply, so that a current passing path is shorter, the efficiency is higher, and the surface of a sample and a metal functional area below the sample can be effectively prevented from being damaged when ion beams are operated. The problems of low device power conversion efficiency, electrode short circuit and the like are solved.

Vacuum electron devices (VEDs) having a plurality of two-dimensional layers of various materials are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together into a sandwich-like structure. The manufacturing process enables incorporation of metallic, magnetic, ceramic materials, and other materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability.

An electrochemical apparatus includes a positive electrode plate including a positive electrode active material layer; a negative electrode plate including a negative electrode active material layer; and a separator disposed between the positive electrode plate and the negative electrode plate. A mass ratio of fluorine to sulfur in a surface layer of the positive electrode active material layer is A, and a mass ratio of fluorine to sulfur in a surface layer of the negative electrode active material layer is B, where 30≤A≤300, and 5≤B≤50.

A display device includes a circuit layer, and light-emitting devices electrically connected to the circuit layer. Each of the light-emitting devices includes pixel electrode, an optical compensation layer, a light-emitting portion and a counter electrode. The pixel electrodes of the light-emitting devices include a first pixel electrode, a second pixel electrode and a third pixel electrode. The optical compensation layers of the light-emitting devices cover each of the first pixel electrode and the second pixel electrode among the first pixel electrode, the second pixel electrode and the third pixel electrode. A thickness of the optical compensation layer covering the first pixel electrode is greater than a thickness of the optical compensation layer covering the second pixel electrode.

The present disclosure relates to patterning in a device having an organic light emitting diode display and a sensor. The electronic device may include a display and an optical sensor formed below the display. A pixel removal area on the display may at least partially overlap with the sensor. The pixel removal area may include a plurality of non-pixel areas, each non-pixel area not containing a thin film transistor. The plurality of non-pixel areas are configured to increase the transmittance of light through the display to the sensor. In addition to removing the thin film transistors in the pixel removal area, additional layers in the display stack structure may also be removed. Specifically, the cathode layer, polyimide layer and / or substrate in the display stack structure may be patterned to have openings in the pixel removal area. The polarizer may be bleached in the pixel removal area to obtain additional transmittance gain. The cathode layer may be removed using laser ablation using a point laser or blanket illumination.

A cathode heater assembly for use in a vacuum electronic device comprises a refractive cup having a bottom portion and side walls forming a container; a cathode secured in the container of the refractive cup; and a heater wire coupled to the refractive cup. The cathode heater assembly may be manufactured by providing a refractive cup having a bottom portion and side walls forming a container; inserting a cathode pellet in the container of the refractive cup; impregnating the cathode pellet with electron emissive materials while the cathode pellet is in the container of the refractive cup; and attaching a heater wire to the refractive cup.

A light-emitting device comprising a light-emitting layer between a pair of electrodes, wherein the light-emitting layer contains a first material, a second material and a third material, wherein the first material can convert the triplet excitation energy into light emission and has a five-membered ring framework, wherein the first material is a metal complex, wherein the second material can convert the singlet excitation energy into light emission and has a luminophore and five or more protecting groups, wherein the luminophore is a condensed aromatic ring or a condensed heteroaromatic ring, wherein the five or more protecting groups each independently comprise an alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms or a trialkylsilyl group having 3 to 12 carbon atoms, wherein the third material comprises a diazine framework or a triazine framework, and wherein a T1 level of the first material is higher than an S1 level of the second material.

This application provides a collector, a traveling wave tube (TWT), and an electronic device, relating to the field of TWT technology. The TWT includes a slow-wave structure and a collector; the end of the slow-wave structure includes a transition channel corresponding to the electron beam; the collector includes multiple stages of sequentially stepped-down electrodes; the end of the first stage electrode in the multiple stages of sequentially stepped-down electrodes is located within the transition channel; or, the end of the first stage electrode is inclined towards the cavity of the collector at a first tilt angle along the axis of the electron beam, the first tilt angle being determined according to the velocity of the electron beam. The technical solution provided by the embodiments of this application enables the collector to simultaneously achieve both low peak backflow rate and high efficiency of deep backflow collectors.

An optical sensor comprises a light-emitting element configured to emit light in a region where an object is present; a light-receiving element configured to receive reflected light from the object; a generation unit configured to generate a histogram indicating a relationship between a time from emission of the light by the light-emitting element to reception of the reflected light by the light-receiving element and an intensity of the reflected light received by the light-receiving element; a first calculation unit configured to calculate skewness of the histogram; and a second calculation unit configured to calculate a distance between the optical sensor and the object with reference to the histogram and the skewness.

The invention discloses a stretchable imidazole polyethylene electron transport material as well as a preparation method and application thereof, and belongs to the technical field of organic photoelectric materials. The stretchable imidazole polyethylene electron transport material is obtained by taking polyethylene glycol methacrylate, 2-(butylamino) carbonyl oxo ethyl acrylate and an electron transport material structural unit as raw materials in a free radical polymerization mode under the condition of an organic solvent and an initiator. According to the invention, an electron transport material structural unit is introduced into the intrinsic stretchable elastomer in a chemical cross-linking manner, so that the stretchability and photoelectric properties of the elastomer are well balanced. The stretchable imidazole polyethylene electron transport material can be used as an electron transport layer material to prepare an electroluminescent device with high stretchability, high efficiency and high stability, and can be applied to the fields of flexible display, sensing detection, wearable electronic equipment and the like.

An oxide semiconductor film containing indium (In) and a first metallic element selected from a group consisting of aluminum (Al), gallium (Ga), yttrium (Y), scandium (Sc), and lanthanide elements is deposited over a substrate. The oxide semiconductor film comprises a variety of crystal grains and a grain boundary with a crystal orientation difference of more than 5 degrees between two adjacent measurement points, determined by an EBSD (electron backscatter diffraction) method. An average KAM (crystal orientation change) value calculated by the EBSD method is greater than or equal to 1.0 degree. The average value of the grain boundary orientation changes calculated by the EBSD method is at most 40 degrees.

Disclosed are an organometallic compound, an organic light-emitting device including the same, and an electronic device including the organic light-emitting device. The organometallic compound is represented by Formula 1, where M1 is a transition metal, L1 is a ligand represented by Formula 1A, L2 is a ligand represented by Formula 1B, and n1 and n2 are each independently 1 or 2, where X2 is C (R2) or N, X3 is C (R3) or N, X4 is C (R4) or N, X5 is C (R5) or N, X6 is C (R6) or N, and X7 is C (R7) or N, where at least one of X2 to X7 is not N; at least one of R2 to R7 is-F,-Si (Q1) (Q2) (Q3), or-Ge (Q1) (Q2) (Q3); or a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C6-C60 aryl group, or a C1-C60 heteroaryl group, each substituted by at least one of-F,-Si (Q31) (Q32) (Q33),-Ge (Q31) (Q32) (Q33), or a combination thereof, and the remaining groups and variables are as described herein. # imgabs0 #

The invention belongs to the technical field of vacuum electronic devices, and particularly relates to a dynode with an edge expansion type inner substrate and an electron multiplier comprising the dynode. The dynode comprises a grid mesh assembly, a base frame box and an edge expansion type inner substrate, and the inner substrate is located in the base frame box. The lining bottom comprises an arc-shaped side wall part, an upper wall, a lower wall and a bent part; the bent parts are arranged between the arc-shaped side wall part and the upper wall and between the arc-shaped side wall and the lower wall; the base frame box comprises a side wall, and an upper baffle and a lower baffle which are connected with the side wall; the arc-shaped side wall part of the lining bottom is attached to the side wall of the base frame box, the upper wall of the lining bottom is tightly attached to the upper baffle of the base frame box, and the lower wall of the lining bottom is tightly attached to the lower baffle of the base frame box. The inner substrate structure enables the electric field in the dynode to change, and especially the electric field intensity at the corners in the dynode, namely the area where the bent part is located, is obviously changed. The problem of low dynode electron collection efficiency is solved, and the gain of the electron multiplier is improved.

The present application provides a method and system for processing optical element production data, which relates to optical element detection technology. In this method, the electronic device inputs the thickness data of the optical element to be processed and the process parameter data of the optical element processing area uploaded by the sensor device into a preset optical element quality prediction model for prediction processing, and obtains the predicted thickness data of the optical element to be processed when the processing in the optical element processing area is completed, so as to determine whether the optical element to be processed will have quality problems when it is processed in the optical element processing area. By applying this method, the quality of optical elements can be effectively improved.

Provided is an organic compound having electron injection properties and low solubility in water. Provided is an organic compound represented by general formula (G1). Note that in general formula (G1), Ar is an aromatic skeleton represented by general formula (Ar-1), L represents an alkylene group, an arylene group, or a heteroarylene group, n represents an integer of 0 to 3, m represents an integer of 1 to 4, and R1 to R12 each independently represent hydrogen or an alkyl group. In general formula (Ar-1), ring A represents a benzene ring or a naphthalene ring, ring B represents a naphthalene ring, an anthracene ring, or a phenanthrene ring, alpha represents oxygen, sulfur, carbon having a substituent, silicon having a substituent, or germanium having a substituent, and any m carbon atoms included in general formula (Ar-1) have m bonds in general formula (G1). # imgabs0 #

Vacuum electron devices (VEDs) are produced having a plurality of two-dimensional layers of various materials that are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together using brazing, diffusion bonding, assisted diffusion bonding, solid state bonding, cold welding, ultrasonic welding, and the like. The manufacturing process enables incorporation of metallic, magnetic, and ceramic materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability. The VEDs so produced include a combination of magnetic and electrostatic lenses for electron beam control.