262 results about "Electron device" patented technology

An augmented-reality glasses comprises a plurality of panels of light emitters arranged to form an array of light emitters, wherein the array of light emitters includes light emitters of three colors; collimation optics for collimating light received from the array of light emitters; an optical coupler for receiving the collimated light; and a three-channel waveguide combiner for display of augmented-reality content to a wearer of the augmented-reality glasses, wherein each channel of the three-channel waveguide combiner respectively causes display of images of one color of the three colors generated by the light emitters. In some embodiments, the three-channel waveguide combiner is an optical waveguide with pupil replication and the optical coupler is an in-coupling optical element for coupling the collimated light into the three-channel waveguide combiner.

The invention relates to Device for quantum generation of random numbers comprising a light source (100) with fixed polarization and a polarization splitting element (110) optically connected thereto, having a first output (111) corresponding to vertical polarization and a second output (112) corresponding to horizontal polarization, and a first detector (131) optically connected to the first output (111) of the polarization splitting element (110) and a second detector (132) optically connected to the second output (112) of the polarization splitting element (110), a generating module (140) having a first input (141) connected to the output of the first detector (131) and a second input (142) connected to the output of the second detector (132), and a two-state output (143), the generating module (140) configured to generate on the two-state output (143) bits having a value of 1 upon receiving a signal on the first input (141) and bits having a value of 0 upon receiving a signal on the second input (142), characterized in that the light source (100) is connected to the polarization splitting element (110) via a multi-state polarization modulator (150) controlled by a digital or analog signal generated by a control electronics (160) connected to the multi-state polarization modulator (150).The invention comprises also a method for verification of privacy of random bit sequences generated by means of such a device.

The invention relates to the technical field of microelectronic manufacturing. The invention discloses a double-layer V-shaped nanowire structure which comprises a base layer arranged on a substrate and further comprises an upper-layer nanowire and a lower-layer nanowire which spatially grow on the base layer in a staggered mode, the upper-layer nanowire and the lower-layer nanowire are broken line type nanowires, and horizontal projections of break points of the broken line type nanowires and horizontal projections of break points of the broken line type nanowires and the lower-layer nanowire coincide and are located on the same plumb line. And the broken line type nanowire on the upper layer is broken at the break point to form a gap. According to the invention, two spatially staggered nanowires are grown by using single IPSLS, the lower layer continuous silicon nanowire is used as a conductive channel, and the upper layer gap nanowire is used as an adjustable depletion gate, so that the preparation process flow of the double-layer V-shaped nanowire structure is greatly simplified, and multiple quantum islands can be integrated to construct a compact quantum bit chain.

An organic electroluminescence device includes an anode, a cathode, and an emitting region interposed between the anode and the cathode. The emitting region includes a first sensitizing layer and a first emitting layer. The first sensitizing layer contains a first host material and a first sensitizing material; and the first emitting layer contains a second host material and a first luminescent compound. The first host material and the second host material are mutually different; and the first sensitizing material and the first luminescent compound are mutually different. The lowest singlet energy S1(G1) and the energy gap T77K(G1) at 77K of the first sensitizing material satisfy (Numerical Formula 1): ΔST(G1)=S1(G1)−T77K(G1)<0.5 eV.

A system and a method for controlling a power MOSFET for limiting electromagnetic interference from a load is provided. The system and method include a pulse-width-modulated (PWM) control voltage to operate the power MOSFET in accordance with its Ohmic region (linear mode). By operating the power MOSFET in its Ohmic region, the electromagnetic field generated by the load is reduced, without requiring a dedicated DC / DC converter that would otherwise increase the cost, size, and weight of the power electronics.

Methods and systems are provided for controlling an electron beam generated by an X-ray tube assembly including a unipolar cathode with a long cable between driving electronics of the cathode and the X-ray tube. A voltage supplied to a gridding electrode of the cathode is controlled by a multi-stage switching unit including a first control circuit and a second control circuit. A bias voltage for switching the cathode on is generated by a high precision voltage source of the second control circuit, and a gridding voltage for switching the cathode off is generated by voltage sources of the first control circuit. A time taken to transition between the gridding voltage and the bias voltage is advantageously reduced by decreasing the supplied voltage to a common voltage (e.g., 0 V) in a first step, and then increasing the supplied voltage to the bias voltage or the gridding voltage in a second step.

To provide an organic electroluminescent device that emits light with a long life.SOLUTION: In an organic electroluminescent device 1A, an organic layer 10A includes one or more layers, and at least one layer (e.g., an emitting layer 5) of the layers included in the organic layer 10A contains a first material and a second material, the first material includes at least one compound selected from the group consisting of compounds represented by the formula (11) and compounds represented by the formula (12), and the compounds represented by the formula (11) and the formula (12) are each independently a delayed fluorescent compound, and the second material includes a compound represented by the following formula (2).SELECTED DRAWING: Figure 1

A color mixing circuit for light sources comprising a power supply module, a first light source module, a second light source module, a first resistance module, a second resistance module, and a circuit gating module; the first light source module is respectively connected to the power supply module and the circuit gating module; the first light source module is further connected to the circuit gating module through the first resistance module; the second light source module is respectively connected with the power supply module and the circuit gating module; the second light source module is further connected to the circuit gating module through the second resistance module; the circuit gating module is also connected to the power supply module; the first light source module and the second light source module are configured to emit light.

The driving voltage of a light-emitting device is lowered to improve the emission efficiency. The light-emitting device includes a first electrode, a second electrode, a light-emitting layer, and a first layer. The light-emitting layer is positioned between the first electrode and the second electrode. The first layer is positioned between the first electrode and the light-emitting layer. The light-emitting layer contains a light-emitting substance. The first layer contains a first organic compound. The HOMO level of the first organic compound is lower than or equal to −5.40 eV. The first organic compound provides a light-emitting device represented by General Formula (G1) below (Note that Q is O or S in General Formula (G1). One of A and B represents a group represented by General Formula (g1) above, and the other of A and B and R1 to R31 each independently represent any of H, D, an alkyl group, a cyclic saturated hydrocarbon group, an alkoxy group, a cyano group, halogen, a haloalkyl group, and an aromatic hydrocarbon group. Note that R9 and R10 may be bonded to each other to form a spirocyclic structure).

Provided are a metal element-doped metal oxide dispersion liquid and a method for producing the same, the metal element-doped metal oxide dispersion liquid being excellent in dispersibility of the metal element-doped metal oxide particles, and it being possible to satisfy characteristics (flatness, defect amount, PL intensity of quantum dots when laminated as an ETL on a quantum dot layer, charge transport properties, etc.)　The metal element-doped metal oxide dispersion liquid includes metal element-doped metal oxide particles and a solvent as a dispersion medium, and has a metal cation content calculated from Li, Na, K, and Ca included in the solvent of 1 to 2700 ppm, the metal oxide particles being particles having zinc oxide as a main component, the metal element doped into the particles having zinc oxide as a main component including one or more elements selected from Al, Mg, Li, Ca, Ga, and In, and the doped metal element being included in a ratio of 2-20 mol% with respect to elemental zinc.

A display device includes a circuit layer, and light-emitting devices electrically connected to the circuit layer. Each of the light-emitting devices includes pixel electrode, an optical compensation layer, a light-emitting portion and a counter electrode. The pixel electrodes of the light-emitting devices include a first pixel electrode, a second pixel electrode and a third pixel electrode. The optical compensation layers of the light-emitting devices cover each of the first pixel electrode and the second pixel electrode among the first pixel electrode, the second pixel electrode and the third pixel electrode. A thickness of the optical compensation layer covering the first pixel electrode is greater than a thickness of the optical compensation layer covering the second pixel electrode.

The present disclosure relates to patterning in a device having an organic light emitting diode display and a sensor. The electronic device may include a display and an optical sensor formed below the display. A pixel removal area on the display may at least partially overlap with the sensor. The pixel removal area may include a plurality of non-pixel areas, each non-pixel area not containing a thin film transistor. The plurality of non-pixel areas are configured to increase the transmittance of light through the display to the sensor. In addition to removing the thin film transistors in the pixel removal area, additional layers in the display stack structure may also be removed. Specifically, the cathode layer, polyimide layer and / or substrate in the display stack structure may be patterned to have openings in the pixel removal area. The polarizer may be bleached in the pixel removal area to obtain additional transmittance gain. The cathode layer may be removed using laser ablation using a point laser or blanket illumination.

A light-emitting device comprising a light-emitting layer between a pair of electrodes, wherein the light-emitting layer contains a first material, a second material and a third material, wherein the first material can convert the triplet excitation energy into light emission and has a five-membered ring framework, wherein the first material is a metal complex, wherein the second material can convert the singlet excitation energy into light emission and has a luminophore and five or more protecting groups, wherein the luminophore is a condensed aromatic ring or a condensed heteroaromatic ring, wherein the five or more protecting groups each independently comprise an alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms or a trialkylsilyl group having 3 to 12 carbon atoms, wherein the third material comprises a diazine framework or a triazine framework, and wherein a T1 level of the first material is higher than an S1 level of the second material.

This application provides a collector, a traveling wave tube (TWT), and an electronic device, relating to the field of TWT technology. The TWT includes a slow-wave structure and a collector; the end of the slow-wave structure includes a transition channel corresponding to the electron beam; the collector includes multiple stages of sequentially stepped-down electrodes; the end of the first stage electrode in the multiple stages of sequentially stepped-down electrodes is located within the transition channel; or, the end of the first stage electrode is inclined towards the cavity of the collector at a first tilt angle along the axis of the electron beam, the first tilt angle being determined according to the velocity of the electron beam. The technical solution provided by the embodiments of this application enables the collector to simultaneously achieve both low peak backflow rate and high efficiency of deep backflow collectors.

An optical sensor comprises a light-emitting element configured to emit light in a region where an object is present; a light-receiving element configured to receive reflected light from the object; a generation unit configured to generate a histogram indicating a relationship between a time from emission of the light by the light-emitting element to reception of the reflected light by the light-receiving element and an intensity of the reflected light received by the light-receiving element; a first calculation unit configured to calculate skewness of the histogram; and a second calculation unit configured to calculate a distance between the optical sensor and the object with reference to the histogram and the skewness.

The invention discloses a stretchable imidazole polyethylene electron transport material as well as a preparation method and application thereof, and belongs to the technical field of organic photoelectric materials. The stretchable imidazole polyethylene electron transport material is obtained by taking polyethylene glycol methacrylate, 2-(butylamino) carbonyl oxo ethyl acrylate and an electron transport material structural unit as raw materials in a free radical polymerization mode under the condition of an organic solvent and an initiator. According to the invention, an electron transport material structural unit is introduced into the intrinsic stretchable elastomer in a chemical cross-linking manner, so that the stretchability and photoelectric properties of the elastomer are well balanced. The stretchable imidazole polyethylene electron transport material can be used as an electron transport layer material to prepare an electroluminescent device with high stretchability, high efficiency and high stability, and can be applied to the fields of flexible display, sensing detection, wearable electronic equipment and the like.

Disclosed are an organometallic compound, an organic light-emitting device including the same, and an electronic device including the organic light-emitting device. The organometallic compound is represented by Formula 1, where M1 is a transition metal, L1 is a ligand represented by Formula 1A, L2 is a ligand represented by Formula 1B, and n1 and n2 are each independently 1 or 2, where X2 is C (R2) or N, X3 is C (R3) or N, X4 is C (R4) or N, X5 is C (R5) or N, X6 is C (R6) or N, and X7 is C (R7) or N, where at least one of X2 to X7 is not N; at least one of R2 to R7 is-F,-Si (Q1) (Q2) (Q3), or-Ge (Q1) (Q2) (Q3); or a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C6-C60 aryl group, or a C1-C60 heteroaryl group, each substituted by at least one of-F,-Si (Q31) (Q32) (Q33),-Ge (Q31) (Q32) (Q33), or a combination thereof, and the remaining groups and variables are as described herein. # imgabs0 #

The invention belongs to the technical field of vacuum electronic devices, and particularly relates to a dynode with an edge expansion type inner substrate and an electron multiplier comprising the dynode. The dynode comprises a grid mesh assembly, a base frame box and an edge expansion type inner substrate, and the inner substrate is located in the base frame box. The lining bottom comprises an arc-shaped side wall part, an upper wall, a lower wall and a bent part; the bent parts are arranged between the arc-shaped side wall part and the upper wall and between the arc-shaped side wall and the lower wall; the base frame box comprises a side wall, and an upper baffle and a lower baffle which are connected with the side wall; the arc-shaped side wall part of the lining bottom is attached to the side wall of the base frame box, the upper wall of the lining bottom is tightly attached to the upper baffle of the base frame box, and the lower wall of the lining bottom is tightly attached to the lower baffle of the base frame box. The inner substrate structure enables the electric field in the dynode to change, and especially the electric field intensity at the corners in the dynode, namely the area where the bent part is located, is obviously changed. The problem of low dynode electron collection efficiency is solved, and the gain of the electron multiplier is improved.

Provided is an organic compound having electron injection properties and low solubility in water. Provided is an organic compound represented by general formula (G1). Note that in general formula (G1), Ar is an aromatic skeleton represented by general formula (Ar-1), L represents an alkylene group, an arylene group, or a heteroarylene group, n represents an integer of 0 to 3, m represents an integer of 1 to 4, and R1 to R12 each independently represent hydrogen or an alkyl group. In general formula (Ar-1), ring A represents a benzene ring or a naphthalene ring, ring B represents a naphthalene ring, an anthracene ring, or a phenanthrene ring, alpha represents oxygen, sulfur, carbon having a substituent, silicon having a substituent, or germanium having a substituent, and any m carbon atoms included in general formula (Ar-1) have m bonds in general formula (G1). # imgabs0 #

Vacuum electron devices (VEDs) are produced having a plurality of two-dimensional layers of various materials that are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together using brazing, diffusion bonding, assisted diffusion bonding, solid state bonding, cold welding, ultrasonic welding, and the like. The manufacturing process enables incorporation of metallic, magnetic, and ceramic materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability. The VEDs so produced include a combination of magnetic and electrostatic lenses for electron beam control.

The embodiment of the invention discloses a two-stage negative impedance electromagnetic shunt damper optimization method and related equipment, and the method comprises the steps: building a two-degree-of-freedom linear system kinetic model and a two-degree-of-freedom linear system kinetic equation, and deducing a force transmission rate analytical expression of a two-degree-of-freedom linear system; performing parameter optimization calculation on the two-stage negative impedance electromagnetic shunt damper based on the expression to obtain optimal parameters; and designing the two-stage negative impedance electromagnetic shunt damper according to the optimal parameters. The method can solve the problems that in the design process, inductance, resistance and rigidity parameters are difficult to balance, and design efficiency is low, can be suitable for multi-objective optimization design of the negative impedance electromagnetic shunt damper, has the advantages of being high in calculation efficiency, good in convergence and uniform in solution set distribution, and has good application prospects. The damper which is low in power, simple in electronic equipment, small in mass and good in vibration isolation performance can be designed easily, and hardware support is provided for micro-vibration suppression of spacecrafts. The method is widely applied to the technical field of micro-vibration suppression of spacecrafts.

A vibrationally enhanced fluorescence microscopy system includes a narrowband pulsed mid-infrared laser configured to excite selected chemical bond vibrations in a sample. A continuous-wave visible laser is coaligned with the mid-infrared laser and configured to induce fluorescence from at least one fluorescent reporter bound to the sample. An external pulse generator temporally synchronizes emission of the mid-infrared pulses with emission of the visible laser. A reflective objective is arranged to deliver the mid-infrared pulses to a focal plane within the sample. A water-immersion objective is coaxially aligned with the reflective objective and arranged to collect the fluorescence from the focal plane. A photon-counting detector is coupled to receive the collected fluorescence. Control electronics are configured to output a vibrational-contrast signal derived from counts produced by the photon-counting detector.

A thin optical device having high light utilization efficiency and less chromatic aberration and a small electronic device including the optical device are provided. The thin optical device includes a first reflective polarizing plate, a lens, an optical rotator, a retardation plate, and a second reflective polarizing plate. The optical device can be a thin optical device by rotation of the polarization plane of linearly polarized light with the optical rotator and utilization of a property of selectively reflecting circularly polarized light of the second reflective polarizing plate. Furthermore, the optical device does not use a half mirror and thus has a property of high light utilization efficiency. When the second reflective polarizing plate has a layered structure, chromatic aberration of an optical system can be reduced.

A light-emitting device with a long lifetime is provided. A light-emitting device with high reliability is provided. The light-emitting device includes a first electrode, a first light-emitting layer, a first layer, a second layer, a third layer, a second light-emitting layer, and a second electrode stacked in this order. The first layer contains a first organic compound and a first substance. The second layer contains a second organic compound. The third layer contains a second substance. The first organic compound is an electron-transport material. The first substance is a metallic salt, a metal oxide, or an organometallic salt. The second organic compound is an electron-transport material. The second substance is an electron-injection material. The second layer has a lower concentration of the first substance than the first layer.

The invention discloses a hot cathode for a vacuum device and a preparation method and application of the hot cathode. The structure of the hot cathode comprises a cathode substrate and an emission active material combined on the cathode substrate; wherein the cathode substrate is of a porous structure, and the cathode substrate is made of a mixture of chromic oxide and tungsten; and the emission active material is scandium-containing barium aluminate. According to the scheme, the problem that the requirement of a current high-power vacuum electronic device for a low-working-temperature and high-emission-current-density electron source cannot be met is well solved.

An organic EL device includes: an emitting region including a first emitting layer containing a first host material and a first luminescent compound and a second emitting layer containing a second host material and a second luminescent compound; and a hole transporting zone including one or more organic layers, in which at least one organic layer is a first organic layer in direct contact with the emitting region, the first organic layer contains a hole transporting zone material, the hole transporting zone is in direct contact with an anode and the emitting region, triplet energy of the first host material T1(H1) and the second host material T1(H2) satisfy Numerical Formula 1, and ionization potential of the hole transporting zone material Ip(HT) and the first luminescent compound Ip(D1) satisfy Numerical Formula 1X,T1(H⁢1)>T1(H⁢2)(Numerical⁢ Formula⁢ 1)Ip⁡(D⁢1)-Ip⁡(HT)<-0.05⁢eV.(Numerical⁢ Formula⁢ 1⁢X)

The invention provides a ferroelectric memory, a preparation method thereof and electronic equipment. The ferroelectric memory comprises a substrate and a plurality of memory cells formed on the substrate, wherein each memory cell comprises a ferroelectric capacitor; the ferroelectric capacitor comprises a first electrode and a second electrode which are stacked, and a ferroelectric layer; the ferroelectric layer comprises at least one of hafnium oxide and zirconium oxide and doping elements; the electronegativity of the doping elements is less than that of oxygen, such as sulfur, selenium and tellurium. Therefore, anions formed by doping the elements into the ferroelectric layer are easier to displace under the action of an electric field, the electric polarization state is easier to overturn, the coercive electric field of the ferroelectric film is reduced, and meanwhile, a rectangular ferroelectric hysteresis loop can be maintained, so that the working voltage of the ferroelectric memory device can be reduced, and the anti-interference capability can be improved.

The present application relates to an organic light-emitting device and an electronic device including the organic light-emitting device. The organic light-emitting device includes an anode, a cathode, and an organic layer between the anode and the cathode and including an emission region. The emission region includes a first emission layer, a second emission layer, and a first exciton quenching layer. The first emission layer contains a first host and a first dopant, the second emission layer contains a second host and a second dopant, and the first exciton quenching layer is disposed between the first emission layer and the second emission layer and contains a first quenching material.

A single-photon avalanche diode unit is provided, which includes at least one main junction and a barrier region. A size of the main junction is smaller than a preset size; a polarity of the barrier region is the same as that of a first well region, and the first well region is a well region of the main junction away from an electrode of the single-photon avalanche diode unit in a depth direction. The barrier region is in the same layer as the first well region in the depth direction and is arranged around the first well region; and the barrier region extends outward to a hole conductive region of the single-photon avalanche diode unit, and a polarity of the hole conductive region is the same as that of the first well region.

A light-emitting device with high emission efficiency and reliability is provided. The light-emitting device includes first and second fluorescent light-emitting layers. A host material used in the first fluorescent light-emitting layer has a function of converting triplet excitation energy into light emission, a guest material used in the first light-emitting layer has a molecular structure including a luminophore and a protecting group, and one molecule of the guest material includes five or more protecting groups. The introduction of the protecting groups into the molecule inhibits transfer of triplet excitation energy by the Dexter mechanism from the host material to the guest material. An alkyl group or a branched-chain alkyl group is used as the protecting groups. The materials are selected such that the triplet excitation energy level of the host material in the second light-emitting layer is lower than the triplet excitation energy level of the guest material in the second light-emitting layer.