37 results about "Intrinsic resistance" patented technology

A method is provided for reducing the power rating of a current limiting resistor (R) in a branch circuit having at least one protected element and the current limiting resistor connected between first and second nodes. The method includes the steps of: determining a maximum fault current in the branch circuit; determining a total current limiting resistance to limit the current in the branch circuit having the short-circuited elements to the maximum fault current; inserting a fuse having an intrinsic resistance in the branch circuit; and dividing the determined total current limiting resistance between the resistor (R) and the intrinsic resistance of the fuse.

A resistor structure is disclosed that is constructed out of two layers of polysilicon. The intrinsic device is made using the top layer which is either a dedicated deposition, or formed as part of an existing process step such as a base epi growth in a BiCMOS flow. This poly layer can be made with a relatively high (greater than 2000 ohms per square) sheet resistance by appropriate scaling of the implant dose or by insitu doping methods. In this invention this layer is arranged to be about 1000 A or less thick. Such a resistor form with this thickness has been shown to demonstrate a better standard deviation of resistance compared to resistors made with a thicker layer. Additionally, practical resistors made in elongated forms demonstrate better standard deviations of resistance when five bends were incorporated into the form. The resistor ends are formed by the addition of a bottom poly layer in a self aligned manner with a deposition that may already be part of the process sequence. The end result is that the intrinsic resistor body is formed of a single poly layer, while the ends are created out of two layers. These ends are thick enough so that standard silicide and contact etch processing may be added to the structure without special care. In addition, dedicated or already available implants may be incorporated into the resistor ends to ensure ohmic contacts from polysilicon to the silicide or the contact metal are achieved. These steps can produce an easily fabricated resistor structure with consistent, low resistance, ohmic end contacts, and intrinsic resistance of greater than 2000 ohms per square.

An input circuit for an integrated circuit includes an electrostatic discharge circuit. The input circuit incorporates an interconnect pad, an ESD protection resistor, and an interconnect line that are coupled to the active internal components of the integrated circuit. The interconnect pad is coupled to the interconnect line, and the interconnect line is coupled to the ESD protection resistor which is coupled to the active internal components of the integrated circuit. The ESD protection resistor is positioned physically proximate to the active internal components of the integrated circuit and adjusted in value to compensate for the intrinsic resistance or RC time constant of the interconnect line. The circuitry provides for a lower signal propagation delay through the external connection because of lower RC time constants to drive the capacitance of the interconnect.

An input circuit for an integrated circuit includes an electrostatic discharge circuit. The input circuit incorporates an interconnect pad, an ESD protection resistor, and an interconnect line that are coupled to the active internal components of the integrated circuit. The interconnect pad is coupled to the interconnect line, and the interconnect line is coupled to the ESD protection resistor which is coupled to the active internal components of the integrated circuit. The ESD protection resistor is positioned physically proximate to the active internal components of the integrated circuit and adjusted in value to compensate for the intrinsic resistance or RC time constant of the interconnect line. The circuitry provides for a lower signal propagation delay through the external connection because of lower RC time constants to drive the capacitance of the interconnect.

The invention discloses a small signal model of the super broadband gallium nitride device and a parameter extraction method thereof. The small signal model in a bar, a source, and a leak end uses three interconnected capacitors and a cascadeinductance network structure formrespectively, and comprises 18 parasitic parameters and 10 intrinsic parameters; the parasitic parameterscomprise outer parasitic capacitors Cpgi1, Cpdi1, and Cgdi1 and the like, the parasitic inductancesLgi1, Ldi1, and Lsi1 and the like, andthe parasitic resistances Rg, Rd, and Rs; the intrinsic parameterscomprisethe intrinsic capacitors Cgd, Cgs and the Cds, the intrinsic resistances Rgs, Rgd, Rds, and the parameters Gm and ta in the intrinsic current source Ids=ViGme-jOmegata. The model can be used to accurately describe the characteristics of high-frequency devices, can makethe model to have a wider application band, the maximum can be applied to the w-frequency band; the parameter extraction method can achieve excellent stability in a 0.2-110GHz frequency range of the model parameters.

The present invention relates to Saccharomyces cerevisiae strains suitable for the production of baker's yeasts which are osmotolerant and which exhibit intrinsic resistance to weak organic acids.The strains of the present invention are obtained by means of a process of hybridization or of mutation of the industrial S. cerevisiae strain deposited on Jul. 8, 2010 with the CNCM [French National Collection of Microorganism Cultures] under number I-4341, or from an industrial strain related thereto via the Ty profile thereof and / or via quantitative trait locus mapping (QTL mapping).

The invention provides a refrigeration lubricant composition which with low viscosity, high volume intrinsic resistance and good low-temperature stability. The lubricating oil composition for refrigerators is mainly composed of a mixed ester obtained from a mixed alcohol and a 5-10C saturated monocarboxylic acid, the mixed alcohol comprising 1-90 mol% of neopentyl glycol, 10-80 mol% of pentaerythritol and 0.01-20 mol% of dipentaerythritol and satisfying the relational equation: 0.2<=[(mol% of pentaerythritol) / (mol% of neopentyl glycol * mol% of dipentaerythritol)]<=7.0, and has a kinematic viscosity at 40[deg.]C of 6-28 mm<2> / s.