This invention describes a magnetoresistive inertial sensor
chip, comprising a substrate (101), a vibrating diaphragm (102, 102'), a
magnetic field sensing magnetoresistor (105) and at least one permanent
magnet thin film (108). The vibrating diaphragm (102, 102') is located on one side surface of the substrate (101). The
magnetic field sensing magnetoresistor (105) and the permanent
magnet thin film (108) are set on the surface of the vibrating diaphragm (102, 102') displaced from the base of the substrate (101). A
contact electrode (106) is also arranged on the surface of the vibrating diaphragm (102, 102') away from the base of the substrate (101). The
magnetic field sensing magnetoresistor (105) is connected to the
contact electrode (106) through a lead (104). The substrate (101) comprises a cavity (103) formed through
etching and either one or both of the magnetic field sensing magnetoresistors (105) and the permanent
magnet thin film (108) are arranged in a
vertical projection area of the cavity (103) in the vibrating diaphragm portion (102, 102'). A magnetic field generated by the permanent magnet thin film (108) changes in the sensing direction of the magnetic field sensing magnetoresistor (105) of magnetoresistive inertial sensor
chip, which changes the resistance valve of the magnetic field sensing magnetoresistor (105), thereby producing a change in an output electrical
signal. This magnetoresistive inertial sensor
chip uses the high-sensitivity and high-
frequency response characteristics of a magnetoresistor to improve the output
signal strength and
frequency response, thereby facilitating the detection of small and
high frequency pressure, vibration, or acceleration changes.