94 results about "Contact barrier" patented technology

The invention discloses a bearing fault detection method based on a manner of controlling stochastic resonance by an external periodic signal. According to the method provided in the invention, after a bearing fault signal is converted by a variable metric method, the converted signal is input in a bistable system; meanwhile, an external single frequency periodic signal is taken as a control signal to act directly on the system; contact barrier height of the bistable system and an escape rate of Kramers are changed by continuously adjusting an amplitude of the control signal. Therefore, stochastic resonance can be generated or increased artificially; a spectral value of an output power spectrum at the position of an input signal frequency can be effectively improved; and thus a characteristic signal of a bearing fault can be detected accurately at last. The detection method provided in the invention enables the effective control of the stochastic resonance to be realized, thereby providing a novel method for early detection of equipment faults.

The invention belongs to the field of photoelectric devices, and discloses a modified electron transport layer and a perovskite solar cell, the modified electron transport layer comprises a modified layer capable of decreasing the contact barrier between an electrode and an electron transport layer and the electron transport layer, moreover, the electron transport layer is coated with the modified layer, and the atoms or ions in the modified layer can diffuse to the electron transport layer and enhance the electrical conductivity of the electron transport layer. The invention also discloses the solar cell adopting the modified electron transport layer as an electron transport layer. The invention helps to decrease the series resistance of a perovskite cell and an organic solar cell in order to increase the efficiency of the cells, retards the deterioration of contact performance between the electron transport layer and the electrode, enhances the stability of the cell, and prolongs the life of the cell.

The invention relates to the field of microelectronic technology, a method for improving the ohmic contact characteristics of a silicon carbide semiconductor, comprising the following steps: (1) performing traditional RCA cleaning on a silicon carbide sample; (2) placing the silicon carbide sample in electron cyclotron resonance microwave plasma In the bulk system, hydrogen plasma treatment is carried out; (3) electrode pattern is formed on the silicon carbide sample by photolithography; (4) metal electrode material titanium or titanium carbide is deposited by magnetron sputtering; (5) The silicon sample was stripped of metal other than the electrodes in an ultrasonic cleaner with acetone, and dried with nitrogen; (6) the silicon carbide sample was annealed in a nitrogen atmosphere. In the present invention, after pre-treating the surface of silicon carbide with hydrogen plasma generated by an electron cyclotron resonance system, the surface of silicon carbide is effectively cleaned and passivated, and the surface state density is significantly reduced, and combined with low work function metal titanium or titanium carbide and relatively The silicon carbide substrate with high doping concentration has a low barrier height of Ti/SiC contact, and good ohmic contact can be formed under low temperature annealing conditions.

The invention discloses a cathode modified plane perovskite solar energy cell and a preparation method thereof; the cathode modified plane perovskite solar energy cell comprises a conductive substrate, a cavity transfer layer, a perovskite layer, an electron transfer layer, a cathode modification layer and a metal counter electrode arranged from bottom to top in order; the cathode modification layer is made of acetylacetone titanium oxide (TOPD) material, and is arranged so as to reduce contact barriers between an cathode metal electrode and the electron transfer layer in certain level, thus reducing series resistances, greatly improving fill factor and current density, and effectively improving the energy conversion efficiency; on the other hand, compared with a method using a thermal evaporation inorganic cathode interface modification layer, the cathode modified plane perovskite solar energy cell preparation method can greatly simplify the production technology, thus reducing the preparation cost. The method employs the low temperature preparation technology in the whole process, thus providing a new path and reliability for the commercialization of the efficient flexible perovskite solar energy cells.

The invention relates to a precious-metal doped TiO2/TiO2 homogeneous-structure ultraviolet detector and a preparation method and belongs to the technical field of semiconductor photoelectric devices. The detector comprises a quartz substrate, a precious-metal doped TiO2 film layer, a pure TiO2 film layer and a metal interdigital electrode. The detector is characterized by being provided with a homogeneous structure formed by the precious-metal doped TiO2 film layer and the pure TiO2 film layer. On one side, by the doping of precious metal, the substrate material has a low Fermi level, and the metal electrode and substrate material contacting barrier height is reduced; on the other side, the built-in electric field direction of the homogeneous structure formed by the precious-metal doped TiO2 film layer and the pure TiO2 film layer is opposite to the built-in electric field direction of metal-semiconductor contact of the detector, and the barrier height is also reduced. The photo-response characteristic of the ultraviolet detector is effectively improved from the material doping modification and the device structure.

In an integrated circuit package, a method for insulation and reinforcement of individual bonding wires in an integrated circuit package. Using an airbrush, bonding wires are sprayed and coated with an insulating material prior to the molding process. Mold flow induced short rejects are eliminated as a result of: (a) Electrically insulating the bonding wires by coating them with an insulating mixture; (b) Physically isolating the bonding wires as a result of bead formation around individual bonding wires, with the insulating beads acting as contact barriers between the bonding wires; and (c) Enhancing the structural rigidity of the bonding wires as a result of the coating. Reinforcement and separation of bonding wires also reduces inductive coupling and/or crosstalk interference due to proximity of bonding wires.

System and method for reducing contact resistance and improving barrier properties is provided. An embodiment comprises a dielectric layer and contacts extending through the dielectric layer to connect to conductive regions. A contact barrier layer is formed between the conductive regions and the contacts by electroless plating the conductive regions after openings have been formed through the dielectric layer for the contact. The contact barrier layer is then treated to fill the grain boundary of the contact barrier layer, thereby improving the contact resistance. In another embodiment, the contact barrier layer is formed on the conductive regions by electroless plating prior to the formation of the dielectric layer.

The invention belongs to the field of photoelectric devices, and discloses an alloy electrode capable of improving the efficiency and the stability of a solar cell. The alloy electrode is a binary or complex alloy electrode formed in the mode that precious metal silver is combined with metal such as aluminum, titanium, zinc, copper and/or magnesium. The invention further discloses the solar cell with the alloy electrode serving as the cathode or the anode of the cell. By means of the alloy electrode and the solar cell, matching between the energy level of the alloy electrode and the energy level of a carrier transport layer is easily improved, the contact barrier is reduced, and the efficiency of the cell is improved; silver atoms in the alloy electrode are slowly diffused to the carrier transport layer and an optical active layer, and therefore the stability of the cell can be improved; the use amount of silver materials in a unit area of the cell is decreased, the cost of the cell is easily controlled, and resources are saved.

The invention relates to a method for adjusting the Schottky contact barrier height of metal and N-type germanium. The method comprises the following steps of: cleaning the N-type germanium substrate; putting the cleaned N-type germanium substrate into PECVD to deposit a silicon dioxide layer; photoetching the N-type germanium substrate, and removing the silicon dioxide layer to obtain an N-type germanium substrate with a deposited metal window; and putting the treated N-type germanium substrate into a magnetron sputtering machine, depositing a TaN layer on the front of the N-type germanium substrate, depositing a monomer metal layer on the TaN layer, and preparing metal/TaN/n-Ge contact by adopting a lift-off process. The method is a novel method for adjusting the Schottky contact barrier height of the metal/n-Ge, which is simple and compatible with the micro-electronic process and has low cost.

The invention discloses an absorption layer variable doped InGaAs avalanche photodiode and a preparation method thereof. The structure comprises an N+InP substrate, and an N-InP buffer layer, multipleN-In(1-x)GaxAs absorption layers of different doping concentration, an N-In(1-x)GaxAsyP(1-y) gradient layer, an N-InP charge layer, an intrinsic doped InP multiplication layer and a P+-InP contact layer which are arranged on the N+InP substrate from the bottom to the top in turn. The method comprises the steps that the layers are epitaxially grown on the N-type heavily doped InP substrate in turnby using metal organic chemical vapor deposition; silica is downwardly etched by using the plasma enhanced chemical vapor deposition technology with the photoresist acting as the mask, and finally the photoresist is removed; the InGaAs epitaxial structure is etched by using the reactive ion etching technology with the silica acting as the mask; and metal and semiconductor material are enabled toform ohmic contact by using electron beam evaporation and the rapid thermal annealing technology so as to reduce the contact barrier.

A method for depositing a barrier layer onto a substrate is disclosed. A layer of titanium (Ti) is deposited onto the substrate using an ionized metal plasma physical vapor deposition process, wherein the layer of Ti has a thickness of between about 10 angstroms (Å) and about 1000 Å. A first layer of titanium nitride (TiN) is deposited onto the layer of Ti using a metal organic chemical vapor deposition process, wherein the first layer of TiN has a thickness of between about 1 Å and about 100 Å. A second layer of TiN is deposited onto the first layer of TiN using a thermal chemical vapor deposition process, wherein the second layer of TiN has a thickness of between about 10 Å and about 750 Å.

A semiconductor device according to the present invention is a semiconductor device having a first wiring formed in a first insulating layer and a second wiring formed in a second insulating layer formed on the first insulating layer and the first wiring. Here, at least one of the first wiring and the second wiring is a CuAl wiring. The second wiring is electrically connected to the first wiring at its via-plug portion, with a plurality of barrier layers interposed between the second wiring and the first wiring. In the barrier layers, a CuAl-contact barrier layer which is in contact with the CuAl wiring has a nitrogen atom content of less than 10 atomic %. Therefore, the present semiconductor device has high reliability and small variations in initial via resistance value.

A semiconductor device having a contact barrier for insulating contacts with a large aspect ratio and having a fine pitch between adjacent conductive lines and a method of manufacturing the same are provided. The semiconductor device includes a buried contact formed in a region between two adjacent first conductive lines and two adjacent second conductive lines. Insulating lines define a width of the buried contact. To form the contact barrier, an interlayer dielectric layer formed on the second conductive lines is patterned to form a space and an insulating line having an etching ratio different from the interlayer dielectric layer is formed in the space. The interlayer dielectric layer is selectively wet etched relative to an insulating layer covering the second conductive line and the first insulating line to form buried contact hole. The buried contact hole is filled with conductive material to form a buried contact.

The invention discloses a method for manufacturing a p-type GaN low-resistance-value ohmic contact layer. The method is characterized by sequentially comprising the steps that a substrate is processed, a buffer layer is grown on the substrate, a u-type GaN layer is grown on the buffer layer, an n-type GaN layer is grown on the u-type GaN layer, an MQW active layer is grown on the n-type GaN layer, an AlGaN layer is grown on the MQW active layer, a first p-type GaN layer is grown on the AlGaN layer, and a second p-type GaN layer is grown on the first p-type GaN layer. Compared with the prior art, due to the fact that the second p-type GaN layer has high Mg concentration doping, the hole concentration of the contact layer is high, the contact resistivity of the second p-type GaN layer and metal is reduced, a barrier region generated by the second p-type GaN layer and the metal becomes narrow, the probability that a carrier penetrates through a metal and semiconductor contact barrier region through tunneling is increased, the work voltage of a high-power LED chip is reduced, and therefore the light emitting efficiency of the high-power LED chip is improved.