Hybrid imaging detector structure

An imaging detector and cover structure technology, applied in the field of semiconductor integrated circuits and sensors, can solve problems such as difficulty in eliminating aberration, and achieve the effect of low cost and high performance

Active Publication Date: 2020-08-25
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Abstract
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Problems solved by technology

However, almost all image fusion methods are implemented based on systems and / or algorithms, so it is difficult to eliminate the problem of phase difference

Method used

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Embodiment Construction

[0018] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0019] It should be noted that, in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly show the structure of the present invention for the convenience of description, the structures in the drawings are not drawn according to the general scale, and are drawn Partial magnification, deformation and simplification are included, therefore, it should be avoided to be interpreted as a limitation of the present invention.

[0020] In the following specific embodiments of the present invention, please refer to figure 1 , figure 1 It is a structural schematic diagram of a hybrid imaging detector in a preferred embodiment of the present invention. like figure 1 As shown, a hybrid imaging detector structure of the present invention includes: a visible light sensor 30 and...

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Abstract

The invention discloses a hybrid imaging detector structure, which comprises a visible light sensor and an infrared sensor which are stacked up and down, and is characterized in that light firstly enters the visible light sensor, is absorbed and filtered, and then further enters the infrared sensor, wherein the visible light sensor is of a sealing cover structure, and the infrared sensor is sealedon a substrate of a single chip in a vacuum mode. According to the invention, a traditional CMOS-MEMS micro-bridge resonant cavity structure is utilized to carry out middle and far infrared detection, and meanwhile, vacuum packaging and visible light detection are realized by using a sealing cover with a pn junction or a metal semiconductor contact barrier device, so that low-cost, high-quality and phase-difference-free single-chip image fusion of visible light and middle and far infrared images is realized.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuits and sensors, in particular to a hybrid imaging detector structure capable of simultaneously detecting visible light and infrared light. Background technique [0002] At present, the fusion of visible light and mid-to-far infrared images is one of the frontier and hot research directions in the fields of image recognition, machine learning and AI. However, almost all image fusion methods are implemented based on systems and / or algorithms, so it is difficult to eliminate the problem of phase difference. Contents of the invention [0003] The object of the present invention is to overcome the above-mentioned defects in the prior art and provide a hybrid imaging detector structure. [0004] To achieve the above object, the technical scheme of the present invention is as follows: [0005] A hybrid imaging detector structure, including: a visible light sensor and an infrare...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L31/102B81B7/02
CPCH01L27/14669H01L31/102B81B7/02Y02P70/50
Inventor 康晓旭钟晓兰
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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