310results about How to "Increase hole concentration" patented technology

The invention provides a nitride light-emitting diode (LED) epitaxial wafer and a growing method thereof and relates to the technical field of semiconductor optoelectronics. The nitride LED epitaxial wafer structurally and sequentially comprises a substrate, a low-temperature buffer layer, an unintentionally doped GaN, an N-shaped electron-injection layer, an InGaN/GaN inserting layer, an active area, an electron blocking layer, a u-GaN/p-GaN superlattice and a p-GaN hole-injection layer from bottom to top. The InGaN/GaN inserting layer is grown between the N-shaped electron-injection layer and the active area so as to effective relieve stress of the active area, lower polarization electric fields, reduce limitation of stark effect through a quantum well, and improve luminance and anti-static properties. The u-GaN/p-GaN superlattice is inserted between the electron blocking layer and the P-shaped hole-injection layer so as to improve current expansion capacity and lower chip operating voltage.

The invention discloses a nitride LED (light-emitting diode) structure. A P-type doped InGaN/GaN superlattice structure is inserted between a multiple quantum well active layer and an electronic barrier layer so as to improve the hole concentration and reduce the dosage concentration of the P-type hole injection layer; the superlattice structure has polarization effect, thus being capable of improving the doping efficiency and reducing the P-type impurity concentration; and impurity atoms are prevented from being diffused to the potential well, and the inner quantum efficiency and the luminous efficiency of the device can be improved. The invention also discloses a preparation method of the nitride LED structure, through inserting the P-type doped InGaN/GaN superlattice structure between the multiple quantum well active layer and the electronic barrier layer, the hole concentration can be improved, and the dosage concentration of the P-type hole injection layer can be reduced; since the superlattice structure has polarization effect, the doping efficiency can be improved and the P-type impurity concentration can be reduced; and the impurity atoms are prevented from being diffused to the potential well, and the inner quantum efficiency and the luminous efficiency of the device can be improved.

An integrated optical waveguide has a first optical waveguide, a second optical waveguide, and a groove. The second optical waveguide is coupled to the first optical waveguide and has a refractive index that is different from the first optical waveguide. The groove is disposed so as to traverse an optical path of the first optical waveguide and is separated from an interface between the first optical waveguide and the second optical waveguide by a predetermined spacing. The spacing from the interface and the width of the groove are determined such that reflection at a boundary between the first optical waveguide and the second optical waveguide is weakened. A semiconductor board may be disposed at a boundary between the first optical waveguide and the second optical waveguide. In this case, the width of the groove and the thickness of the semiconductor board are determined such that light reflected off an interface between the first optical waveguide and the groove is weakened by light reflected from an interface between the groove and the semiconductor board, and by light reflected from an interface between the semiconductor board and the second optical waveguide.

The invention discloses an epitaxial wafer, growing method and LED structure of an Mg-doped electronic barrier layer. The epitaxial wafer comprises a substrate, a low-temperature GaN buffer layer, a high-temperature GaN buffer layer, an n type GaN layer, an n type AlGaN layer, an n type contact layer, a multiple quantum well layer and a GaN base layer from bottom to top in sequence. An AlGaN/GaN electronic barrier layer is arranged on the GaN base layer, a low-temperature P type GaN layer is arranged on the AlGaN/GaN electronic barrier layer, a high-concentration AlGaN/InGaN electronic barrier layer doped with Mg is arranged on the low-temperature P type GaN layer, a high-temperature P type GaN layer is arranged on the AlGaN/InGaN electronic barrier layer, and a P type contact layer is arranged on the high-temperature P type GaN layer. The epitaxial wafer, growing method and LED structure of the Mg-doped electronic barrier layer have the advantages that the hole concentration of the part injected into multiple quantum wells of a P layer is improved, and the barrier function of electrons is improved so that the luminous efficiency can be improved, and the brightness can be obviously improved.

A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.

A nitride semiconductor device includes a first nitride semiconductor layer having a C-plane as a growth surface, and unevenness in an upper surface; and a second nitride semiconductor layer formed on the first nitride semiconductor layer to be in contact with the unevenness, and having p-type conductivity. The second nitride semiconductor layer located directly on a sidewall of the unevenness has a p-type carrier concentration of 1×10¹⁸/cm³ or more.

Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a second layer stacked on the first layer and formed of at least one selected from the group consisting of Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, ITO, and ZnO. The Zn-based p-type electrode has excellent electrical, optical, and thermal properties.

The invention provides an LED epitaxial layer growing method and an LED epitaxial layer. The method for growing a P-type GaN layer comprises the steps that A, NH3 and Cp2Mg are introduced in a reaction chamber at the temperature of 900 DEG C to 950 DEG C, wherein pressure of a reaction cavity ranges from 200 mbar to 600 mbar, TMGa is closed, and pretreatment of doping Mg is carried out for 10 minutes-20 minutes; B, TMGa is introduced, Cp2Mg is closed, a GaN layer grows for 20 minutes-40 minutes, and the thickness of GaN is 5 nm-10 nm; the step A and the step B are repeated ten to twenty times until the total thickness of the P-type GaN layer is 80 nm-200 nm. According to the method, delta doping is used for growing the P-type GaN layer, the crystal quality of the P-type GaN layer is improved, the dislocation density is reduced, and hole concentration and the migration rate of P-type GaN are improved; more hole-electron pairs can be provided for light-emitting active areas of an LED device, the composite probability is improved, the brightness is promoted, and therefore photoelectric property of the LED device is improved.

The invention provides a GaN (gallium nitride)-based semiconductor laser and a manufacturing method thereof, belonging to the field of semiconductor lasers. The GaN-based semiconductor laser does not have an electronic barrier layer, thus reducing the working voltage of the laser and prolonging the service life of the laser. For the laser, a quantum cascade radiation layer is arranged between an n-type optical limited layer and an n-type waveguide layer of the laser and utilized to generate infrared radiation when the laser operates, thus realizing ionization of magnesium acceptor impurities in a p-type GaN waveguide layer and a AlGaN optical limited layer, improving carrier concentration in each p-type layer, increasing hole injection current, reducing leakage of electronics from an active area, avoiding introduction of a AlGaN electronic barrier layer and eliminating optical absorption loss caused by the magnesium-doped AlGaN electronic barrier layer, thereby reducing the threshold current of the laser, reducing the working voltage of the laser and prolonging the service life of the laser.

The invention discloses a multi-element ring-containing compound, application and an organic electroluminescent device. The molecular design is carried out on the multi-element ring-containing compound, so that low molecular LUMO energy level (-4.0 to -6.0 ev) is effectively realized, and the LUMO energy level of the molecule can be well matched with the HOMO of a hole transport material, when themulti-element ring-containing compound is used as a hole doping material in the organic electroluminescent device, the hole concentration and the hole mobility can be effectively improved, and the hole transmission and injection efficiency can be improved. Meanwhile, through accurate regulation and control of the molecular structure, the molecule has good thermal stability, low volatility and high decomposition temperature, and can be uniformly and stably distributed in a specific functional layer.

An integrated optical waveguide has a first optical waveguide, a second optical waveguide, and a groove. The second optical waveguide is coupled to the first optical waveguide and has a refractive index that is different from the first optical waveguide. The groove is disposed so as to traverse an optical path of the first optical waveguide and is separated from an interface between the first optical waveguide and the second optical waveguide by a predetermined spacing. The spacing from the interface and the width of the groove are determined such that reflection at a boundary between the first optical waveguide and the second optical waveguide is weakened. A semiconductor board may be disposed at a boundary between the first optical waveguide and the second optical waveguide. In this case, the width of the groove and the thickness of the semiconductor board are determined such that light reflected off an interface between the first optical waveguide and the groove is weakened by light reflected from an interface between the groove and the semiconductor board, and by light reflected from an interface between the semiconductor board and the second optical waveguide.

The invention discloses a GaN-base light-emitting diode chip growing method and belongs to the technical field of semiconductors. The method comprises the steps that a substrate is provided; a buffering layer, an undoped GaN layer, an n-type layer and a multiple-quantum-well layer grow on the substrate in sequence in an overlapping mode; a p-type layer and a current expanding layer grow on the multiple-quantum-well layer; the p-type layer grows on the multiple-quantum-well layer. Specifically, the GaN-base light-emitting diode chip growing method comprises the steps that a first sub-layer and a second sub-layer grow on the multiple-quantum-well layer in an alternating mode, Mg doping is carried out on the first sub-layer and the second sub-layer, the first sub-layer grows in a pure-nitrogen atmosphere, and the second sub-layer grows in a pure-hydrogen atmosphere. According to the method, the first sub-layer grows in the pure-nitrogen atmosphere, doped Mg activation can be well improved, Mg activation can improve hole concentration; the second sub-layer grows in the pure-hydrogen atmosphere, due to the strong reducing property of hydrogen, impurities in crystals can be reduced, the injection efficiency of holes is increased, and crystal quality and chip light-emitting efficiency are improved.

The invention relates to a p-type electric-conducting Sb mixed SnO2 film and a stannic oxide homogeneous pn junction containing film and preparation methods thereof. The p-type electric-conducting Sb mixed SnO2 film is prepared by adopting Sb mixed SnO2 ceramic target on single crystal and quartz glass in a magnetron sputtering method. The stannic oxide homogeneous pn junction is prepared by sputtering and depositing an n-type Sb mixed SnO2 film on the p-type electric-conducting Sb mixed SnO2 film. The p-type electric-conducting Sb mixed SnO2 film is stable in electric conductivity, has high hole concentration, hole mobility and specific conductance and has high transparency in visible light, wherein hole concentration is as high as 1020cm-3 order of magnitudes, specific conductance is 60S.cm-1, and hole mobility is as high as 2-30cm<2>V-1s-1. The preparation methods are simple in process and good in repeatability, can be industrialized easily, and the prepared homogeneous stannic oxide based transparent pn junction has volt-ampere curve characteristics of wide bandgap semiconductor pn junction.

The invention discloses a method for growing an LED epitaxial structure with a high-quality InGaN/GaN active layer. The InGaN/GaN active layer is grown by use of the steps of introducing a Ga source and NH3 to grow a GaN barrier layer of 8-5nm in the atmosphere of H2 serving as a main carrier gas, switching the main carrier gas to N2 and introducing the Ga source, an In source and the NH3 to grow an InxGa1-xN trap layer of 2-5nm, shutting down the Ga source and the In source while keeping normal introduction of the NH3 to stop the growth of the InxGa1-xN, turning on the Ga source to grow a GaN protective layer of 1-5nm, switching the main carrier gas to the H2 and introducing the Ga source and the NH3 to grow the GaN barrier layer of 8-5nm, and finally, repeating the second to fifth growth steps for 1-20 cycles. The method for growing the LED epitaxial structure with the high-quality InGaN/GaN active layer is capable of obtaining the high-quality InGaN/GaN active layer and improving the LED luminous efficiency.

The invention provides a preparation method of a high-luminance V-shaped polarized doped deep ultraviolet LED. The prepared deep ultraviolet LED structure comprises a substrate, an AlN buffer layer, astress relief layer, an N type AlGaN layer, an AlGaN/AlGaN multi-quantum-well active region and a P type AlGaN layer with V-shaped gradually changed Al components. By virtue of the P type AlGaN layerwith the V-shaped gradually changed Al components, the light emitting efficiency is improved; meanwhile, by adopting the V-shaped gradually changed structure to replace a P type AlGaN electron barrier layer, a P type AlGaN contact layer and a P type P-GaN layer, the light extracting efficiency is improved; and by virtue of the structure, the hole concentration of the P type layer is greatly improved, light absorption of the P type contact layer is avoided fundamentally, the manufacturing process is simple, and industrial production can be realized.

The invention discloses a GaN base LED epitaxial wafer with the p-type contact layer and the preparation method, wherein the structure of the epitaxial wafer is a substrate, a low temperature buffer layer, an n-type layer, a quantum well, a p-type layer, a p-type contact layer in turn from the lower to the upper and the p-type contact layer is the quantum well layer structure. The invention is added with a p-type contact layer structure on the structure basis of the epitaxial wafer, wherein the p-type contact layer adopts the quantum well structure, due to the different energy of the well layer and the barrier layer valence band to effectively advance the hole density of the layer. Meanwhile, the motion of the hole on the direction vertical to the quantum well plane is restricted, which is favorable for the two-dimensional motion for the hole on the quantum well plane, under the applied voltage is favorable for the expansion in the p-type layer to cause the current distribution more uniform, to increase the performance of the LED. The preparation method of the epitaxial wafer provided in the invention is simple, low in cost, precise in the preparation condition, which realizes the industrialization production.

The invention provides a GaN-based HBT epitaxial structure for reducing electrical resistivity at a base region and a growing method. The structure comprises a substrate, an n type collecting region prepared on the substrate, a p type component gradual-change base region prepared on the n type collecting region, and an n type emitter region prepared on the p type base region. On the basis of the special structural design, the electrical resistivity at a base region is substantially reduced, thereby improving the device performance.

The present invention provides an AlGa-based semiconductor ultraviolet device for improving luminous efficiency and a preparation method thereof, and relates to the technical field of semiconductors.The epitaxial structure of the device comprises a substrate, an AlN buffer layer, an n-type AlGaN layer, an AlxGa1-xN/AlyGa1-yN luminescence active region, the last one AlGaN quantum barrier layer, ap-type AlGaN electron blocking layer, a p-type AlGaN layer and a contact layer, wherein 0.01<=x and y<=1. The luminescence active region comprises a plurality of quantum well layers and a plurality ofquantum barrier layers, the quantum well layers and the quantum barrier layers are alternately arranged, and the last one AlGaN quantum barrier layer is an aluminium ingredient gradient layer. The last one AlGaN quantum barrier layer of aluminium ingredient gradient is introduced in the ultraviolet device to optimize the energy band structure of the device, effectively improve the electron restriction effect and enhance the cavity injection efficiency so as to improve the quantum efficiency and the luminescence efficiency of the semiconductor ultraviolet device.