Preparation method of p type GaN and AlGaN semiconductor material

Abstract

The invention discloses a preparation method of a p type GaN and AlGaN semiconductor material. A substrate, and a buffer layer or a transition layer, an unintended doped layer and an acceptor doped layer grown on the substrate from bottom to top are contained; in a growth process of the structure, ammonia or nitrogen dimethylhydrazine is used as a five-group nitrogen source; trimethyl gallium or TEGa used as a three-group gallium source, trimethylaluminium or triethyl aluminum used as a three-group aluminium source, and trimethylindium or TEIn used as a three-group indium source are collectively called three-group metal sources; and the trimethylindium or the TEIn is also used as a surface active agent and used in the acceptor doped layer. According to the method, the trimethylindium or the TEIn is used as the surface active agent to assist growth, and simultaneously, the acceptor doped layer is prepared by adopting a delta doping method. According to the method, the doping efficiency of acceptor doped magnesium atoms is increased, and simultaneously, the self-compensation effect is suppressed, so that the p type GaN and AlGaN semiconductor material with favorable crystalline quality and high hole concentration is obtained.

Description

technical field [0001] The invention relates to the technical field of epitaxial growth of p-type GaN and AlGaN semiconductor materials, in particular to a method for preparing p-type GaN and AlGaN semiconductor materials by using surfactant-assisted delta doping. Background technique [0002] Group III nitrides (also known as GaN-based materials), as the third-generation semiconductor materials, have the characteristics of large band gap, direct band gap (high photoelectric conversion efficiency), stable chemical properties, strong thermal conductivity and high breakdown voltage. Based on this type of semiconductor material, optoelectronic devices with high photoelectric conversion efficiency and high response speed (such as blue-green light-emitting diodes, semiconductor lasers and ultraviolet photodetectors) and high-temperature resistant, high-voltage resistant, high-power electronic devices ( Such as high electron mobility transistors and high power switching field effe...

AI Technical Summary

Problems solved by technology

Although this method can make good use of the hole gas formed by the energy band oscillation of the heterointerface to obtain a higher hole concentration, the superlattice structure is composed of two semiconductor materials with different band gaps alternately stacked and grown. Yes, these two different materials will be different in light absorption intensity and cut-off wavelength, which will affect the performance of optoelectronic devices made using them; acceptor-donor co-doping method (High Doped p-Type GaN Grown by Alternative Co-Doping Technique, Mat. Res. Soc. Symp. Proc. Vol. 719, 2002), although the acceptor-donor Coulomb interaction can be used to effectively reduce the acceptor-doped magnesium atom Ionization energy, but the growth window of this method is very narrow, it is difficult to realize, and it is not conducive to large-scale production and commercial application

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