47results about How to "Lower ionization energy" patented technology

The invention belongs to the material and component field of organic ultraviolet detector comprising a substrate, a transparent conductive film, an electronic donor layer, a mixing layer, an electronic receptor layer, and an electronic collection electrode layer, characterized in that: the thin mixing layer of electronic donor and electronic receptor is disposed between the electronic donor layer and the electronic receptor layer, and the absorption band of the used functional material is located in the ultraviolet region of 300-400nm, the UV light with center wavelength of 365nm are used as UV light source. The organic light detector is organic photovoltaic diode which is sensitive to ultraviolet light and not sensitive to the visual light, can be applicable in the science, industry and business field with simple fabricating process, cheap material and component, small volume, and convenience for carrying, therefore tending to be used widely.

System for detection and analysis of gas samples in fieldable real-time Differential Mobility Spectrometry (DMS) chemical sensor system which uses non-radioactive ion source for monitoring and detecting NOx emissions; provides reliable methods for detecting and monitoring of anthropogenic sources of NOx; also detection of NO in exhaled breath for patient health diagnosis.

A process for growing P-type ZnO crystal film by real-time doping of nitrogen includes washing substrate, putting it in reaction chamber of sputter equipment, vacuumizing heating, substrate to 200-600 deg.c, introducing the mixture of high-purity NH3 and O2, and sputter growing with high-purity Zn as target under 1-10 MPa.

The invention discloses a growth method of p-type AlGaN semiconductor material, the semiconductor material is grown by a technical method of adding a gallium source through step into a surfactant-assisted magnesium delta doping, Ammonia gas or dimethylhydrazine nitrogen is used as group V nitrogen source in the growth of p-type AlGaN semiconductor material, Trimethylgallium or triethylgallium is used as a Group III gallium source, trimethylaluminum or triethylaluminum is used as a Group III aluminum source, trimethylindium or triethylindium is used as a Group III indium source, collectively referred to as a Group III metal source, and trimethylindium or triethylindium is also used as a surfactant in the acceptor doping layer. The method of the invention can improve crystal quality, increase doping concentration of acceptor doped magnesium atoms, reduce acceptor ionization energy by enhancing valence band modulation, and further suppress self-compensation effect, thereby obtaining p-type AlGaN semiconductor material with high crystal quality and high hole concentration.

A method of forming plasma used in a process of manufacturing a semiconductor device and a method of forming a layer for a semiconductor device using the plasma are disclosed. The plasma forming method includes forming a plasma region in a sealed space by supplying a plasma source gas into the sealed space at a first flow rate and maintaining the plasma region by supplying a plasma maintenance gas into the sealed space at a second flow rate higher than the first flow rate. The plasma source gas includes a first gas having a first atomic weight, and the plasma maintenance gas includes a second gas having a second atomic weight lower than the first atomic weight. The plasma source gas includes argon and the plasma maintenance gas includes helium. The method may further include forming the layer on a wafer by supplying a source gas into the sealed space.

The invention discloses N,N'-diphenyl-N,N'-di(9,9-dimethyl fluorene-2-yl)-N-hexyl-(4,4'-diamine phenyl) carbazole and a synthetic method thereof and belongs to the field of organic synthesis. According to the synthetic method, 2,7-dibromo-carbazole is used as a raw material and subjected to N-alkylation and a Suzuki coupled reaction to synthesize 2,7-di(4-bromophenyl)-N-hexyl carbazole; 2-bromo-9,9-dimethyl fluorene and aniline are used as raw materials and subjected to a Buchwald-Hartwig coupled reaction to synthesize 9,9-dimethyl-N-phenyl fluorine-2-amine; lastly, 2,7-di(4-bromophenyl)-N-hexyl carbazole and the 9,9-dimethyl-N-phenyl fluorine-2-amine are used as raw materials and subjected to a Buchwald-Hartwig coupled reaction to synthesize a target compound. The target compound has good heat stability and glass transition temperature and is suitable for hole transport materials of organic light-emitting devices.

The invention provides a growth method for an ultraviolet LED epitaxial structure, specially a special growth process for multiple quantum wells of an active area, and the special growth process comprises the following steps: growing LP and PAL as an integral superlattice, wherein a growth period is 5-20; adopting roof type gradual doping for doping of Mg, i.e., gradually reducing after doping ofMg firstly gradually increases to reach a peak value, wherein doping is in symmetrical distribution. Through the superlattice growth, ionization energy of Mg can be reduced, hole concentration is improved, the impurity scattering effect on the hole is reduced, and more holes are injected into a light-emitting area, so that light emitting efficiency is improved. The method is an effective method capable of improving efficiency of an ultraviolet LED; and meanwhile, an apparatus has very good light emitting efficiency, so that photoelectric property of the apparatus is improved.

The present invention discloses a preparation method for a co-doped zinc oxide film through atomic layer deposition. The preparation method comprises: placing a substrate in an ALD reaction chamber, heating the substrate and the chamber pipeline, and sequentially carrying out multi-component composite deposition, wherein the composite deposition comprises respectively introducing one doped deposition of a doped element Zr-containing doped source, second zinc source deposition, two nitrogen doped source depositions and two oxygen source depositions after first zinc source deposition to form N-Zr-N co-doping, wherein the deposition sequence of the nitrogen doped source deposition and the oxygen source deposition is that the oxygen source deposition and the nitrogen doped source deposition are sequentially performed, and the deposition sequence of the doped element Zr-containing doped source deposition and the second zinc source deposition is that the second zinc source deposition and the doped element Zr-containing doped source deposition are sequentially performed. With the method, the in situ donor-acceptor co-doping can be performed on the zinc oxide film so as to increase the doping amount of the acceptor element and promote the p type conversion of the zinc oxide film.

The invention provides an ultralow temperature preparation method of a TMO thin film and a TMO-TFT. The ultralow-temperature preparation method comprises the following steps: S1, preparing a TMO precursor solution; s2, cleaning a substrate and activating the surface of the substrate; s3, preparation of a pre-deposited TMO wet film; s4, pre-annealing is conducted on the pre-deposited TMO wet film obtained in the S3, and a pre-annealed TMO thin film is obtained; s5, carrying out N2 plasma treatment or N2 plasma treatment and post-annealing on the pre-annealed TMO thin film obtained in S4 to obtain a TMO thin film; and S6, preparing a TFT by taking the TMO thin film obtained in the step S5 as an active layer, and obtaining the TMO-TFT. The TMO thin film and the TMO-TFT are prepared at the ultralow temperature while it is guaranteed that the TMO thin film has the good semiconductor characteristic and the TMO-TFT shows the excellent electrical characteristic, and therefore the compatibility of the TMO-TFT and the flexible substrate is enhanced.

A method for operating an electric arc furnace (10) which has at least one electrode (18) having a through-opening (32). An electric arc (20) is generated between the at least one electrode (18) and a material to be melted (16). A first additive is introduced into the through-opening (32) of the electrode (18) for causing an endothermic chemical reaction which is controlled such that the chemical reaction is caused in a predetermined region (34) of the at least one electrode (18), wherein the region faces the material to be melted (16).

The invention provides a method for improving the sintering property of manganese-cobalt-iron-base thermal sensitive ceramic. The method comprises the steps of with transition metal oxides including cobalt sesquioxide, trimanganese tetroxide and iron sesquioxide as main raw materials, adding a trace sintering aid, namely bismuth trioxide, preparing a powder material by virtue of a solid-phase reaction method, and finally preparing the manganese-cobalt-iron-base thermal sensitive ceramic by virtue of forming and sintering processes. According to the manganese-cobalt-iron-base thermal sensitiveceramic prepared by virtue of the preparation method, the crystallinity of crystals can be greatly improved, and the sintering temperature can be greatly deceased. The material constant B25/50 of theceramic is 3695K-3730K, the room temperature specific resistance rho value is 656omaga.cm-894omaga.cm, and the ceramic has very good thermal sensitivity and consistency and can be widely applied to the temperature measurement and control of electronic parts and components such as high-precision instruments.

The invention discloses slurry for an anti-static device. The slurry is prepared from the following raw materials in percentage by weight: 10-15% of an organic carrier, 10-15% of glass powder, 10-20% of a wrapped conductive material, 20-30% of a spherical semiconductor material ZnO, 10-20% of spherical aluminum oxide powder, 1-5% of spherical nano Pt powder or Pd powder, and 1-5% of a solid powder dispersant.

The invention belongs to the technical field of nano materials, and particularly relates to a composite material, a preparation method thereof and a quantum dot light-emitting diode. The composite material comprises ZnS nano-particles and Se and Ga elements doped in the ZnS nano-particles. The composite material is the Zns nanoparticles co-doped by the acceptor (Se)-donor (Ga), the doping of the Se-Ga in the composite material can improve the free carrier concentration of ZnS, so that the resistance of ZnS is reduced, the conductivity is increased, and the electron transmission capability of the composite material is finally improved; and the composite material can be used as a QLED electron transmission material, so that the effective compounding of electrons-holes in a quantum dot lightemitting layer can be promoted, the influence on the device performance by the exciton accumulation can be reduced, and the performance of the device and display performance are improved.

Provided is a ceramic halogen lamp which comprises a ceramic electric arc tube filled with a rare gas, first metal halides, second metal halides, and zinc. The first metal halides comprise sodium iodide, thallium iodide, dysprosium iodide, and thulium iodide. The second metal halides comprise zinc iodide and gallium iodide. The ceramic halogen lamp is environmentally friendly.

The invention belongs to the technical field of nano materials, and particularly relates to a composite material, a preparation method thereof and a quantum dot light-emitting diode. The composite material comprises titanium dioxide nanoparticles, and phosphorus elements and vanadium elements which are doped in the titanium dioxide nanoparticles. The preparation method of the composite material comprises the following steps: providing titanium salt, orthophosphate and vanadium salt; dissolving the titanium salt, orthophosphate and vanadium salt in an organic solvent to obtain a mixed solution;mixing the mixed solution with alkali liquor, and heating to obtain a precursor solution; and carrying out solid-liquid separation on the precursor solution to obtain the composite material. The composite material provided by the invention is used as a hole transport material of the quantum dot light-emitting diode, can promote effective recombination of electrons and holes in a quantum dot light-emitting layer, and reduces the influence of exciton accumulation on the device performance, thereby improving the display performance of the device.