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Preparation method for N-Zr co-doping of zinc oxide thin film

A technology of zinc oxide thin film and oxygen source, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of difficult to achieve precise doping, affecting film thickness and uniformity, and film doping, etc. Achieve the effects of promoting formation, improving stability, and simple preparation process

Active Publication Date: 2014-06-18
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

However, MOCVD cannot do in situ doping of thin films and the turbulence and gas flow distribution in the reaction will affect the thickness and uniformity of the film
It is also difficult to achieve accurate doping of specific atomic layer positions by MBE technology

Method used

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  • Preparation method for N-Zr co-doping of zinc oxide thin film

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Embodiment Construction

[0008] see figure 1 As shown, the preparation method for N-Zr co-doped zinc oxide film provided by the embodiment of the present invention includes: treating a silicon substrate or a glass substrate with concentrated sulfuric acid hydrogen peroxide, and then ultrasonically cleaning with ultrapure water, N 2 Blow dry, wherein concentrated sulfuric acid:hydrogen peroxide=4:1. Put the substrate into the atomic layer deposition chamber, turn on the atomic layer deposition equipment, adjust the working parameters, vacuumize and heat the bottom to achieve various working environments required for the experiment; conduct multiple groups of N-Zr co-doped zinc oxide thin films Composite deposition, namely Zn(C 2 h 5 ) 2 / N 2 / plasma N 2 / N 2 / H 2 O / N 2 / (CH 3 CH 2 O) 4 Zr / N 2 / Zn(C 2 h 5 ) 2 / N 2 / plasma N 2 / N 2 / H 2 O / N 2 =0.15s / 50s / 10s / 50s / 0.07s / 50s / 0.08s / 50s / 0.08s / 50s / 10s / 50s / 0.07s / 50s. Wherein the flow rate of nitrogen is 1sccm-1000sccm, preferably 15sccm, the...

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Abstract

The invention discloses a preparation method for N-Zr co-doping of a zinc oxide thin film. The method comprises the steps of placing a substrate in an ALD reaction chamber, heating the substrate and a chamber pipeline, and then carrying out multi-component composite deposition. The composite deposition comprises: after primary zinc source deposition, respectively introducing doping deposition of a doping source containing a doping element Zr for one time, secondary zinc source deposition, nitrogen doping source deposition for two times and oxygen source deposition for two times, and thus forming N-Zr-N co-doping; the sequence of the nitrogen doping source deposition and the oxygen source deposition is that firstly the nitrogen doping source deposition is carried out and then the oxygen source deposition is carried out; the sequence of the doping element Zr-containing doping source deposition and the secondary zinc source deposition is that firstly the doping element Zr-containing doping source deposition is carried out and then the secondary zinc source deposition is carried out. The method can be used for in-situ donor-acceptor co-doping on the zinc oxide thin film, so as to increase the doped amount of the acceptor element, and promote p-type conversion of the zinc oxide thin film.

Description

technical field [0001] The invention relates to the technical field of preparation of zinc oxide thin films, in particular to a preparation method for N-Zr co-doped zinc oxide thin films. Background technique [0002] Semiconductor thin films play a very important role in high-tech industries such as microelectronics, optics, and informatics. Develop high-quality semiconductor thin film preparation and doping technologies, especially for the preparation, characterization, and The study of doping and its characteristics is of great significance to important application fields for new energy, including ultraviolet-band luminescent materials, ultraviolet detectors, highly integrated photonics and electronic devices, and solar cells. Zinc oxide, as a new type II-VI compound with direct bandgap and wide bandgap, has a large bandgap at room temperature of 3.37eV, and the binding energy of free excitons is as high as 60meV. It has attracted more and more attention as a semiconducto...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/44
Inventor 卢维尔夏洋李超波解婧张阳
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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