63 results about "In situ doping" patented technology

The invention discloses a sulfide solid electrolyte stable in wet air, a preparation method thereof and a battery, and belongs to the technical field of all-solid-state batteries, the sulfide solid electrolyte comprises the following raw materials in parts by weight: 20-100 parts of sulfide solid electrolyte and 1 part of metal halide component, the chemical formula of the sulfide solid electrolyte is Li < 6-x > PS < 5-x > Cl < 1 + x >, 0 < = x < = 0.6, the metal halide component comprises at least one metal halide, the chemical formula of the metal halide is MXn, n is greater than or equal to 2 and less than or equal to 4, M is one of Zr, Al, Zn, Sn, Sb and Bi, and X is one of F, Cl, Br and I. The metal halide and the sulfide solid electrolyte in a specific ratio are mixed, subjected to ball milling and then subjected to annealing treatment, and an in-situ doping coating layer is obtained on the surface of the sulfide solid electrolyte; and under the condition that the ionic conductivity of the sulfide solid electrolyte is slightly influenced, the wet air stability of the sulfide solid electrolyte is effectively improved.

The invention provides an antimony-based chalcogenide film with (hk1) dominant orientation and a preparation method and application thereof, and belongs to the technical field of semiconductor photovoltaic materials. According to the method, the crystal orientation of the antimony-based chalcogenide film is regulated and controlled by doping PbI2 in situ under the simple solution method (water bath or hydrothermal) deposition condition, and research results show that the solution method is adopted to introduce PbI2, so that the antimony-based chalcogenide film can be remarkably induced to preferentially grow along the (hk1) direction, grain boundary scattering and inter-chain potential barriers are effectively weakened, and the crystal orientation of the antimony-based chalcogenide film is improved. The carrier longitudinal migration and collection efficiency is improved, so that the VOC loss is reduced, and the final battery performance is improved; the method provided by the invention not only provides a new thought for preparing the high-orientation antimony-based chalcogenide film, but also lays a technical foundation for design and optimization of a bottom battery material in a future laminated battery.

The present disclosure provides a trench gate semiconductor device and a preparation method thereof. The trench gate semiconductor device comprises a substrate, a drift region and a body region. The drift region is arranged on the surface of the substrate and has a first conductivity type. The body region is epitaxially formed on the surface of the drift region away from the substrate and is an in-situ doped region with a second conductivity type. In the embodiment of the present disclosure, the body region is directly epitaxially formed, which can reduce the lattice damage in the body region, thereby reducing the interface defects between the body region and the gate oxide layer, and further improving the channel mobility. In addition, the tailing effect of the channel caused by ion implantation can be avoided, thereby improving the threshold voltage stability.

The invention provides a method for constructing a composite material MIL-101 (Fe) / KBiO3 by a solvothermal in-situ doping method, which comprises the following steps: adding FeCl3. 6H2O into N, N-dimethylformamide to obtain a liquid A; terephthalic acid and KBiO3 are added into N, N-dimethylformamide, and liquid B is obtained; and carrying out ultrasonic dispersion on the liquid A and the liquid B, carrying out heat treatment washing with a solvent at 110 DEG C, and drying to obtain the composite material MIL-101 (Fe) / KBiO3. The invention also provides application of the composite material MIL-101 (Fe) / KBiO3, and the composite material MIL-101 (Fe) / KBiO3 is used for photocatalytic degradation of Cr (VI). The composite material KBiO3 / MIL-101 (Fe) is prepared by adopting a solvothermal in-situ doping method, and the photocatalytic performance of the MIL-101 (Fe) on Cr (VI) is remarkably improved. The prepared composite material MIL-101 (Fe) / KBiO3 has a remarkable improvement effect in the field of degradation of heavy metal Cr (VI, and a new material choice is provided for heavy metal pollution treatment.

The application discloses an in-situ cross-linked boron-doped lithium manganese iron phosphate positive electrode material and a preparation method thereof, relates to the technical field of materials, and is characterized in that a lithium source is mixed with an iron source, a manganese source and a phosphorus source, and then sintering is performed to obtain an alkaline lithium manganese iron phosphate precursor; the lithium manganese iron phosphate precursor is mixed with a multi-hydroxy carbon source and a boron-containing compound, and a cross-linking reaction is performed; and finally, high-temperature carbonization is performed to obtain the boron-doped lithium manganese iron phosphate positive electrode material. The method utilizes the cross-linking reaction of the multi-hydroxy carbon source and the boron-containing compound through an in-situ cross-linking mechanism to form a borate ester bond. Sintering is performed again to form a carbon coating layer, and synchronous in-situ doping of boron is achieved. The carbon coating layer constructed through the method is more stable, and the boron is preferentially doped at the P position near the manganese, effectively reduces Mn-O distortion, increases Li-O bond length, and thus improves the electrochemical stability, cycle performance and rate performance of the material.

The invention relates to a substrate structure with low dislocation density and a growth method and application thereof, and belongs to the technical field of semiconductor materials. The growth method comprises the following steps: S1, putting a basic substrate into a reaction chamber; s2, introducing a first growth source, a second growth source and a doped metal source into the reaction chamber, and periodically adjusting the flow of the doped metal source to prepare an upper substrate layer on the basic substrate to obtain a substrate structure; wherein each growth cycle comprises a first growth stage and a second growth stage, and the flow of the doped metal source in the first growth stage is smaller than that of the doped metal source in the second growth stage, so that a plurality of doped cluster micro-masks which are arranged at intervals are formed in the second growth stage; the doped cluster micro-mask is used as a mask of the first growth stage in the next growth cycle so as to realize lateral epitaxial growth. According to the invention, the doped cluster micro-mask is formed by in-situ doping self-assembly to induce a 3D growth mode, so that the dislocation density of the substrate structure is reduced.

The application discloses MOF-5 derived single-atom solvent and a preparation method thereof, and belongs to the technical field of nano catalytic materials and liquid catalytic preparation. The preparation method uses MOF-5 as a zinc source and a structure template, in-situ dopes a target metal salt, and through one-step high-temperature pyrolysis and a zinc component volatilization strategy, a metal single-atom highly-dispersed nitrogen-doped carbon-based solid material is prepared; the material is further dispersed in a suitable solvent, and is subjected to homogenization treatment to form a highly-stable MOF-5 derived single-atom solvent which can be stored for a long time. The method utilizes the unique high porosity and uniform metal distribution characteristics of MOF-5, and combines the zinc species volatility under high temperature, so that efficient anchoring and stable dispersion of various metal single atoms are realized, the process is simple, and the universality is strong, and the method provides a new way for controllable preparation of a high-performance single-atom liquid catalytic system.

The invention relates to the technical field of semiconductor production, in particular to a high-growth-rate EPI production method which comprises the following steps: S1, removing oxide on the surface of a silicon substrate by adopting in-situ hydrogen annealing and repairing lattice defects; a gradient temperature rising strategy is adopted in the preheating stage, and slip lines caused by thermal stress are reduced; s2, in a chemical vapor deposition reaction cavity, adopting a double-gas-path injection system, wherein in a main gas path, mixed gas of high-flow SiH2Cl2 and H2 is used as a main silicon source; in the auxiliary gas path, trace SiH4 and HCl are used for inhibiting gas phase nucleation and adjusting the surface reaction activity; s3, adopting a double-area temperature control reaction cavity, wherein a central area is a high-temperature area, and rapid deposition of silicon atoms is promoted; the marginal area is a low-temperature area and inhibits marginal lattice distortion; the pressure of the reaction cavity is controlled to be 50-100 Torr; s4, in-situ doping and real-time monitoring: synchronously introducing phosphorane or diborane in the growth process, monitoring the doping concentration fluctuation in real time through a light emission spectrum, and feeding back and adjusting the gas proportion.

This invention relates to a pH-responsive multifunctional nanoplatform M@FNPs, a drug-loaded composition MP@FNPs, its preparation method, and its applications, belonging to the fields of nanomaterials and biomedical materials technology. The preparation method of the pH-responsive multifunctional nanoplatform M@FNPs includes the following steps: in-situ doping of ZIF-8 with ferric ions during synthesis to obtain iron-doped ZIF-8; dissolving magnesium peroxide nanoparticles and iron-doped ZIF-8 in a solvent; ultrasonicating to load the magnesium peroxide nanoparticles onto the iron-doped ZIF-8; and drying to obtain the final product. The MP@FNPs of this invention, by integrating pH-responsive release, self-supply of hydrogen peroxide and oxygen, and continuous GSH depletion functions, can specifically activate a self-maintaining cascade reaction in the tumor microenvironment, disrupting the redox homeostasis of tumor cells and inducing ferroptosis, thereby effectively overcoming the resistance of tumor cells to platinum-based drugs and synergistically enhancing the efficacy of chemotherapy-immunotherapy.

This invention provides a lithium-cobalt composite oxide, its preparation method, and its application, belonging to the field of lithium-ion battery technology. The general formula of the lithium-cobalt composite oxide of this invention is: Li c Co 1d e‑ f M d Q e E f O2·r Li a Co 1‑b T b O 4 / 3 (a×r+c) / (1+r)≤1; M, Q, and E are each independently selected from at least one of Mg, Al, Ni, Mn, Y, La, Zr, F, P, B, Ti, Cu, and Na; T is at least one of Y, Al, B, Ni, and Mn. This invention introduces elements with different doping forms, utilizing in-situ precursor doping, self-doping, and coating. The synergistic effect of various elements suppresses the irreversible phase transition of cobalt-containing cathode materials coated with T-element materials under high voltage, improving the structural stability of the cathode material, thereby achieving good electrochemical performance with good cycle performance under high voltage.

The invention provides a sulfur-nitrogen co-doped porous carbon nanosheet electrode material and a preparation method thereof. The sulfur-nitrogen co-doped porous carbon nanosheet electrode material is prepared by taking a waste mushroom stick as a carbon source and combining in-situ doping and a template method; the sulfur-nitrogen co-doped porous carbon nanosheet electrode material is 3-8 wt%, the sulfur content is 1-5 wt%, the specific surface area is not less than 1800 m < 2 > / g, the pore volume is not less than 1.2 cm < 3 > / g, the nitrogen element exists in the forms of pyridine nitrogen, pyrrole nitrogen and graphite nitrogen, and the sulfur element exists in the forms of C-S-C covalent bonds and-SOx-functional groups. According to the invention, the carbon nanosheet material with high specific surface area, hierarchical porous structure and uniform sulfur and nitrogen co-doping is prepared by a simple and green method, and the preparation method has important significance for promoting the development of high-performance electrode materials.

The invention discloses an in-situ doping, coating, upgrading and regenerating method for a waste ternary positive electrode material, and belongs to the technical field of battery recovery. The method comprises the following steps: calcining the waste ternary positive electrode material in an oxidizing atmosphere to obtain a pure-phase intermediate; ball-milling and mixing the pure-phase intermediate with a lithium source and M oxides (aluminum oxide, silicon dioxide and the like) to form a mixture; according to the method, in-situ doping, coating, upgrading and regeneration of the waste ternary positive electrode material are realized through a pyrogenic process, and the obtained regenerated ternary positive electrode material has excellent electrochemical performance and cycling stability.

The invention discloses an anti-radiation photosensitive transistor and electronic equipment, and relates to the technical field of transistors, the anti-radiation photosensitive transistor comprises a substrate, a channel layer, a gate dielectric layer, an electrode structure and a two-dimensional semiconductor material layer; the channel layer is located on the substrate, is made of a high-forbidden-bandwidth semiconductor material and comprises a non-photosensitive functional region and a solar-blind photosensitive region, and the non-photosensitive functional region and the solar-blind photosensitive region form an RESURF structure through in-situ doping gradient transition; the gate dielectric layer is located between the gate and the solar-blind photosensitive region and is made of a high-dielectric-constant material; the two-dimensional semiconductor material layer is located between the source electrode and the solar-blind photosensitive region, and the two-dimensional semiconductor material layer and the material of the solar-blind photosensitive region form a Van der Waals heterojunction. The integrated structure synergistically improves the extreme environment radiation resistance, solar blind photosensitive sensitivity and single particle burning resistance reliability of the device, enhances the total ionizing dose resistance, uniformizes electric field distribution, relieves interface stress, optimizes carrier transport, inhibits trapped charge accumulation and local thermal runaway, and gives consideration to high photosensitive response and high breakdown voltage. And the method adapts to extreme high-voltage scenes.

The application relates to the technical field of graphene materials, in particular to a two-dimensional graphene-based photoelectric conversion device and a preparation method thereof, the preparation method comprises the following steps: S1. nickel foil pretreatment, S2. obtaining a B-doped P-type graphene-nickel foil film, S3. obtaining a B, P and N co-doped graphene-nickel foil film, S4. gold quantum dot loading, S5. etching, silicon wafer transfer printing, drying and electrode establishment. The two-dimensional graphene-based photoelectric conversion device provided by the application is an ultrathin two-dimensional photoelectric conversion device which can convert light energy into electric energy and can also be used as an energy supply system of a micro device; in-situ doping is realized in the graphene growth stage through CVD doping, two kinds of doping are realized on the same graphene film through a mask method, N-type doped graphene and P-type doped graphene and an ultrathin and stable two-dimensional graphene-based PN junction are obtained.

A family of novel diazirine-based molecules as well as methods of manufacture and uses thereof are disclosed. These compounds allow non-functionalized polymers, such as polyolefins, to crosslink via C—H insertion. Such a C—H insertion process is useful, for example, for forming protective topical coatings on low surface energy films, for the covalent adhesive bonding of such films, or for creating rigid 3-dimensional polymeric structures by in-situ doping and activation of the crosslinker. The crosslinkers can be activated thermally, by UV radiation or by an electric potential.

A method for preparing a phosphorus-doped electrode inducing Ti4O7 lattice strain and its application in electrocatalytic enhanced advanced purification of pharmaceutical wastewater. Through the in-situ P-doping process, PH3 generated on the surface of Ti4O7 undergoes redox reaction to form new O vacancies, and P is doped into the Ti4O7 lattice to form Ti-O-P structure. O vacancies are conducive to improving the conductivity of the system, and can also increase the Ti 3+ active sites, strengthen · OH production. The construction of P sites can realize its adjustment of CO3 2‑ adsorption and activation, and further reduce its conversion to CO3 ·‑ reaction energy barrier, inhibit CO3 2‑ quenching of · OH. At the same time, in the process of CO3 ·‑ , CO3 2‑ transfers electrons to the electrode surface, which effectively migrates to Ti 3+ sites through O vacancies, inhibits the tendency of high-valence conversion in the catalytic process, thereby realizing · OH stable and efficient production, and effectively degrading antibiotics in pharmaceutical wastewater.

The invention discloses a rare earth modified amorphous aluminum-nickel catalyst with a gradient pore structure and a preparation method of the rare earth modified amorphous aluminum-nickel catalyst, and belongs to the technical field of catalyst preparation. The catalyst comprises an amorphous aluminum-nickel alloy matrix and rare earth oxide nanocrystals dispersed in the amorphous aluminum-nickel alloy matrix, and rare earth oxide is composed of lanthanum oxide, cerium oxide and praseodymium oxide. The preparation method comprises the steps of alloy smelting, alloy crushing, programmed activation, ultrasonic-electric field auxiliary treatment, washing, post-load modification, roasting reduction and protection storage. The activity and selectivity of the catalyst are improved by adopting ternary rare earth synergistic modification, a gradient pore structure is constructed by adopting a programmed three-section activation method to optimize the mass transfer efficiency, accurate regulation and control of the pore structure are realized by adopting ultrasonic-electric field assisted treatment, and the structural stability of the catalyst is improved by adopting in-situ doping and post-loading composite modification. The catalyst provided by the invention is suitable for selective hydrogenation reactions of saccharides such as xylose hydrogenation for preparing xylitol, glucose hydrogenation for preparing sorbitol and the like.

The invention provides a ternary positive electrode material and a preparation method and application thereof, the ternary positive electrode material comprises a mixture of LiNi < x > Co < y > Mn < z > O < 2 > particles coated with LiF, LiF particles and MgO particles, x is greater than 0, y is greater than 0, z is greater than 0, and x + y + z = 1. According to the ternary positive electrode material provided by the invention, direct contact between the positive electrode material and an electrolyte can be reduced through LiF coating, side reaction is reduced, LiF particles and MgO particles can gradually release F <-> and Mg < 2 + > in the working process of a battery, and in-situ doping of a material bulk phase is realized to stabilize the structure, so that the cycling stability of the battery is effectively improved; in addition, the preparation method provided by the invention is simple and suitable for large-scale application.

The invention provides a TOPCon solar cell, a preparation method thereof and a photovoltaic module. The cell comprises an n-type silicon wafer, a tunneling oxide layer and a doped polycrystalline silicon layer, the tunneling oxide layer and the doped polycrystalline silicon layer are located on the back face of the silicon wafer, and the cell is characterized in that the concentration of the doped polycrystalline silicon layer is larger than 5E20, and the tunneling oxide layer is compact in intrinsic, complete in structure and free of pinhole defects. The preparation method comprises the following steps: depositing a tunneling oxide layer and an intrinsic polycrystalline silicon layer on the back surface of a silicon wafer by adopting an LPCVD (Low Pressure Chemical Vapor Deposition) mode; and performing in-situ doping on the intrinsic polycrystalline silicon layer by adopting a PECVD (Plasma Enhanced Chemical Vapor Deposition) mode to form a heavily doped amorphous silicon layer and an oxidation protection layer. According to the TOPCon solar cell, the uniform and compact tunneling oxide layer and the heavily-doped amorphous silicon layer can be obtained, excellent ohmic contact can be formed when the TOPCon solar cell and the metal electrode are sintered, the contact resistance is remarkably reduced, and the TOPCon solar cell has higher open-circuit voltage and FF.

This invention discloses a method for preparing a composite poly-Si thin film, comprising: depositing and growing an intrinsic poly-Si thin film on a single-crystal silicon substrate using a vertical double-layer hot-wire array thermal field design and a high-temperature hot-wire silane pyrolysis technique; and introducing trace amounts of NH3 or N2O gas to generate Si in situ. x N y or SiO x N y A quantum dot barrier layer is formed by introducing a doping source, PH3 or B2H6, for in-situ doping to obtain a doped source layer. The grown poly-Si thin film with the composite structure is then annealed using vacuum rapid annealing or laser annealing to activate the doping source and promote crystal growth. This process produces a poly-Si thin film with a composite structure of "intrinsic layer + barrier layer + doped layer," which improves carrier mobility and reduces parasitic absorption. This structure shows promising application prospects for developing photovoltaic cells and optoelectronic devices.

The invention discloses a preparation method and application of a titanium-niobium-oxygen in-situ doped porous carbon material, and the method comprises the following steps: 1, dispersing a titanium source, a niobium source and a porous carbon substrate in an organic solvent, and stirring to form a uniform precursor suspension; step 2, performing solvothermal reaction on the precursor suspension to enable titanium-niobium-oxygen crystals to perform in-situ nucleation and growth on the surface of the porous carbon substrate and in pores to obtain a composite material precursor; and 3, carrying out high-temperature crystallization treatment on the composite material precursor under the protection of an inert atmosphere to obtain the crystalline titanium-niobium-oxygen in-situ doped porous carbon material. When the composite material is used as a negative electrode of a lithium ion hybrid capacitor, the specific capacities at 0.1 C and 50 C multiplying powers respectively reach 278.9 mAh / g and 133.5 mAh / g, excellent multiplying power performance and cycling stability are shown, the preparation process is simple, the cost is low, and the composite material is suitable for the field of high-performance energy storage devices.

A region-selective in-situ doped gradient lithium-rich cathode material and preparation method, belonging to the field of lithium-ion batteries. The general formula is xLi2MnO3·(1−x)Li(TM,M)O2, where 0 < x < 1, TM is Mn, Ni, and at least includes Ni; the internal Mn concentration decreases in a gradient from the center to the surface layer, and the Ni concentration increases in a gradient from the center to the surface layer; M is selected from at least one of Al, Mg, Ti, Mo, Nb, Ta, and the ratio of the total molar amount of the doping element to the total molar amount of Ni and Mn is (0.02~0.5):(99.5~99.98); during the coprecipitation process, different doping elements are introduced at different reaction times. Al or / and Mg elements are introduced into the core region of the particles, Mo or / and Ti elements are introduced into the intermediate layer region, and Nb or / and Ta elements are doped on the surface layer. Significantly improve the first charge-discharge efficiency and reversible capacity, and achieve long cycle stability.

This invention discloses a method for rigid-flexible interconnection using liquid metal based on patterned indium in-situ doping, belonging to the field of rigid-flexible interconnection technology. The method includes the following steps: Step 1. Preparing a patterned indium conductive material; Step 2. Mixing the patterned indium conductive material with liquid metal for in-situ doping, allowing the patterned indium conductive material to dissolve in-situ in the liquid metal to form an indium-based liquid metal; Step 3. As indium metal diffuses, high-doping concentration regions and low-doping concentration regions of indium metal are formed in the indium-based liquid metal. Rigid leads are immersed in the high-doping concentration region, and the low-doping concentration region is interconnected with the liquid metal wires to form a rigid-flexible interconnection structure. This invention effectively solves the Young's modulus mismatch problem at the interface between rigid chips and flexible circuit systems, increases interconnect reliability, provides high conductivity, and simplifies the fabrication process.

The application discloses a semiconductor dielectric layer structure and a manufacturing method. The semiconductor dielectric layer structure comprises a semiconductor substrate, an epitaxial layer arranged on the surface of the semiconductor substrate, a plurality of grooves arranged on the epitaxial layer, a first thermal oxidation layer arranged on the surface of the epitaxial layer, in-situ doped polysilicon filled in the grooves, a gate oxide layer formed between the in-situ doped polysilicon and the grooves, a silicon nitride layer arranged on the surface of the first thermal oxidation layer between the adjacent grooves, a second thermal oxidation layer arranged on the surface of the silicon nitride layer, a deposited oxide layer arranged on the surface of the second thermal oxidation layer, a contact hole formed by hollowing out the deposited oxide layer, the second thermal oxidation layer, a part of the first thermal oxidation layer and the silicon nitride layer at the bottom of the second thermal oxidation layer, and the bottom end of the contact hole extending to the surface of the epitaxial layer in the middle part of the bottom end, so that the top of the epitaxial layer is exposed, and the bottom end edge of the bottom part of the contact hole extends to the in-situ doped polysilicon to expose the gate oxide layer of the inner wall of the groove. The application can achieve the purpose of reducing reverse leakage current.

The invention discloses a small-size CT (Computed Tomography) perforated groove type IGBT (Insulated Gate Bipolar Translator) device and a manufacturing method thereof, and relates to the technical field of semiconductor devices, the manufacturing method comprises the following steps: manufacturing a drift region, a carrier storage region, a body doping region, a source region and a groove gate structure on a semiconductor substrate; using a second mask to etch the region between the trench gate structures to expose the body doping region; selective epitaxial growth of Si is carried out on the surface of the exposed body doping region, in-situ doping is carried out in the epitaxial growth process, and a selective epitaxial growth region is formed; and forming a contact hole metal column and a surface metal layer on the selective epitaxial growth region. The method can effectively solve the problem of high-quality ohmic contact at the bottom of the small-size CT hole, can avoid the introduction of an additional photoetching step, reduces the process complexity, and improves the reliability of a device.

This invention belongs to the field of oxygen evolution reaction (OER) catalytic materials technology, specifically relating to a high-entropy PEM anode catalyst, its preparation method, and its application. This invention uses a non-precious metal Co3O4 material as a substrate, and forms a high-entropy structure by in-situ doping of B, Mn, Mo, and W into Co3O4 through electrodeposition. Based on the inherent mild reaction characteristics and uniform deposition features of the electrodeposition process, this invention achieves uniform mixing of the above elements at the atomic scale and in-situ doping on the catalyst substrate. This not only enhances the catalytic activity and stability of the catalyst under acidic conditions but also avoids dependence on high-cost iridium, significantly reducing the cost of OER catalysts. This invention solves the problems of insufficient structural stability, poor catalytic performance, and high cost due to strong dependence on iridium in existing OER catalysts under acidic conditions with high oxidation potentials, and has high market application prospects.

The application discloses a kind of anthracite-based porous carbon materials and its gradient activation preparation method and application, it is related to carbon material preparation technical field, its technical scheme main point is: the inert surface of anthracite is broken under mild conditions by using low-temperature plasma in the present application, initial defect is introduced and in-situ doping is carried out;Then, the particles are refined by mechanical chemical action, and the sodium salt is uniformly embedded, providing a template for subsequent pore forming;Then, the gradient strategy of low-temperature steam opening and high-temperature expansion is used to cooperatively build a microporous, mesoporous hierarchical interconnected pore system;Finally, impurities are removed to obtain high-purity materials, the present application enables the finally prepared porous carbon material to have a high specific surface area of 1620-2080 m² / g, a suitable mesopore ratio of 62-72%, and a controllable nitrogen doping amount of 1.9-2.8 at.%.

The application provides a manganese and titanium in-situ doped carbon-containing lithium iron phosphate composite material and a preparation method and application thereof, and belongs to the technical field of positive electrode materials.The application uses titanium white by-product ferrous sulfate as raw material, reduces trivalent iron by using a reducing agent, removes part of titanium and other impurities by flocculation after adding alkali to obtain refined ferrous sulfate with a certain content of manganese and titanium, then oxidizes to obtain iron phosphate by adding phosphoric acid and alkali, and finally obtains the manganese and titanium in-situ doped carbon-containing lithium iron phosphate composite material by calcining after mixing with a lithium source and a carbon source.The application does not need to completely remove manganese and titanium in the titanium white by-product ferrous sulfate, but in-situ doping is carried out by taking the manganese and titanium as doping elements, the preparation process is simpler, uniform doping in the bulk phase is realized, the manganese and titanium double-doped elements have a synergistic effect, and the performance of the composite material is improved.In addition, the carbon material is formed after calcining by adding the carbon source, the conductivity of the composite material is improved, and the electrochemical performance of the composite material is further improved.