63 results about "Channel width" patented technology

Methods, apparatuses, and computer readable media for basic service set (BSS) channel operation are disclosed. Apparatuses of a station (STA) are disclosed, where the apparatuses comprise processing circuitry configured to decode a first frame, the first frame comprising an extremely-high throughput (EHT) operation information field, the EHT operation information field comprising a channel width subfield and a channel center frequency segment, the channel width subfield indicating a basic service set (BSS) contiguous channel width, and the channel center frequency segment indicating a channel center frequency for the BSS channel width on which the BSS operates in 6 GHz. The processing circuitry further configured to encode for transmission a second frame for transmission on a primary channel within the BSS channel width.

The invention relates to the technical field of semiconductor devices, and discloses a wide bandgap power semiconductor device and a preparation method thereof. The method comprises: providing a substrate layer of a first conductivity type; forming a first doped region which is deep into the substrate layer and comprises a plurality of doped layers which are sequentially nested from outside to inside, wherein the doping concentrations of the plurality of doped layers are sequentially increased from outside to inside; forming a second doped region in the doped layer on the innermost side of the first doped region; forming an isolation layer on the first surface; forming a control electrode on the isolation layer; forming a first electrode on the first surface; a second electrode is formed on the second surface of the substrate layer. According to the invention, the first doped region which is located between the substrate layer and the second doped region and has the doping concentration gradually increased from outside to inside is formed through a mode of multiple times of ion implantation, so that transverse electric field constraint is constructed, transverse depletion of a channel region and a short channel effect under the condition of large voltage are inhibited, the channel width is reduced, and the performance of the device is improved. And the device performance and reliability are improved.

The invention provides a thermal resistance model construction method of an LDMOS (Laterally Diffused Metal Oxide Semiconductor) device, which is characterized in that a plurality of N-type doped isolation layers are formed on a substrate, an LDMOS structure is formed on each N-type doped isolation layer, all LDMOS structures are divided into different test groups according to different key sizes, and the key sizes at least comprise a total channel width and a cross index; measuring the thermal resistance of the LDMOS structure in each test group so as to respectively extract a thermal resistance value array of each group, and performing data fitting on the thermal resistance value array of each group so as to obtain a thermal resistance model of the relationship between the thermal resistance value of the LDMOS structure and the critical dimension; according to the method, the thermal resistance model of the full-size LDMOS device can be constructed by only utilizing a limited number of LDMOS structures in a primary tape, so that the thermal resistance of the LDMOS devices with different sizes can be predicted, the self-heating effect of the device can be accurately evaluated in the design stage, the device design is optimized, the development cost of the device is reduced, and the research and development period is shortened.

This invention provides a modeling method for metal-oxide-semiconductor semiconductors, comprising: establishing an initial sub-circuit simulation model, as follows: where Y_MF is the multi-interdigitation effect correction parameter, NF is the interdigitation index of the gate of the MOS device, and X... nf0 A, X nf1 B, X nf2 C, X nf3 D, X nf4 E, X nf5 F and W are both fitting parameters, W is the channel width, L is the channel length, and X is the channel length. nf6 To obtain the fitting parameters, multiple measured electrical characteristic parameters of metal-oxide-semiconductor semiconductors under different interdigitation indices, different channel widths, and different channel lengths are obtained. The fitting parameters are adjusted so that the errors of the multi-interdigitation effect correction parameters obtained from simulations under different interdigitation indices, different channel widths, and different channel lengths are all within the set values. The corresponding fitting parameter values ​​are then determined. The following multi-interdigitation effect model is established: Y = K + Y_MF.

An SRAM device and its formation method are disclosed. The formation method includes: providing a substrate comprising a first type of device region and a second type of device region; the first type of SRAM device having a maximum channel width; both the first and second type of device regions comprising a transmission gate transistor region, a pull-down transistor region, and a pull-up transistor region; forming a stacked structure on the substrate, comprising a first sacrificial layer and a channel layer; the width of each stacked structure in the second type of device region being equal to a preset width of the corresponding transistor region in the first type of device region; performing a channel width adjustment process; in the second type of device region, removing a portion of the channel layer width from any one or two of the transistor regions (transmission gate transistor region, pull-down transistor region, and pull-up transistor region); after removing the portion of the channel layer width, removing the first sacrificial layer; and after removing the first sacrificial layer, forming a gate structure spanning the channel layer. This invention uses the same design layout to form the stacked structure, saving design costs.

The invention provides a two-dimensional extensible sub-array based on a long and narrow circuit channel, and relates to the technical field of millimeter wave / terahertz frequency band phased array front-end, and the two-dimensional extensible sub-array comprises a plurality of two-channel sub-arrays; taking the two-channel sub-array as a standard sub-array module, and expanding the standard sub-array module to a target channel number step by step through cascading in a two-dimensional direction; the two-channel sub-array comprises a two-channel chip and a two-channel antenna sub-array; the two-channel chip comprises two circuit channels which are distributed side by side, and respective antenna ports, common ports and signal flow directions of the two circuit channels are opposite; each antenna unit in the two-channel antenna sub-array covers one side, close to the antenna port, of the corresponding circuit channel; wiring modes and lengths of interconnection lines between the two antenna ports and the corresponding antenna signal feed points are consistent; the width of the circuit channel does not exceed 0.25 lambda, and the length of the circuit channel does not exceed 1 lambda. Standard sub-arrays can be modularized, a large-scale two-dimensional extensible full array is supported, main hot spots are dispersed, and uniform heat dissipation is facilitated.

A MEMS having a fluid channel in at least one MEMS layer is provided. The fluid channel is designed to provide fluid connection between a first channel side and a second channel side. The sidewall structure of the fluid channel includes a scallop-shaped component, wherein, due to the scallop-shaped structure, the acoustic channel has an effective acoustic channel width that is enlarged compared to the nominal channel width.

The invention provides an LDMOS (Laterally Diffused Metal Oxide Semiconductor) device and a manufacturing method thereof. The LDMOS device comprises an epitaxial layer; the drift region and the body region are located in the epitaxial layer; the gate structure is located on the epitaxial layer and stretches across the drift region and the body region; the drain injection region is positioned in the drift region; the source injection region and the plurality of body region injection regions are positioned in the body region; wherein the source injection region comprises a plurality of first source injection regions and a plurality of second source injection regions; the plurality of first source injection regions and the plurality of body region injection regions are alternately distributed in the channel width direction of the LDMOS device; and the plurality of second source injection regions are respectively positioned in the side edge regions, facing the gate structure, of the plurality of body region injection regions so as to form the source injection regions which are communicated along the width direction of the channel. According to the scheme, the N-type injection region is additionally arranged on the polycrystalline silicon channel side of the device to achieve channel compensation, and balance among the cellular pitch, the leakage current and the electric safety working region of the device is better achieved under the condition that the specific on-resistance of the device can be reduced.

The present application relates to a kind of intelligent warehousing systems for latex matrix ground station applied to the technical field of intelligent warehousing, the system includes warehouse, multiple densely arranged shelves, multiple AGVs and central dispatch system. Formed between the shelves and the inner wall of the warehouse one-way traffic loop network by multiple channel segments, channel width and the minimum safe traffic width required for a single AGV match, central dispatch system plans path for AGV executing task, and generates reservation occupancy time window for channel segment passed by it, and then maintains global space-time table to detect space-time conflict between AGVs in real time;When detecting conflict, the system dynamically calculates the traffic priority of conflict AGV, and instructs low-priority AGV to stagger its time window through speed regulation, thereby fundamentally avoiding deadlock.The present application realizes efficient, continuous and reliable operation of the system while ensuring space utilization.

The invention relates to a parameter determination method and device of a circuit simulation model, a medium, equipment and a product, and the method comprises the steps: obtaining a first capacitance value of a first MOS structure, and a first channel width and a first channel length of a first MOS device in the first MOS structure, the first MOS structure comprises n first MOS devices which are connected in parallel, the first channel widths of the first MOS devices are the same, and n is a positive integer; the lengths of first channels of the first MOS devices are the same, each first MOS device comprises a first active region and a first gate region arranged above the first active region, and n is a positive integer greater than 1; and determining a parameter DLC of a circuit simulation model SPICE according to the first capacitance value, the first channel width and the first channel length. According to the scheme, the parameter DLC of the SPICE model is accurately determined, so that an accurate reference basis is provided for establishment of the SPICE simulation model of the MOS tube.

An integrated digital RF circuit system includes: a substrate, the substrate including a substrate integrated waveguide, the substrate integrated waveguide including a waveguide width, a first plurality of vias and a second plurality of vias; and a source circuit board including a waveguide channel, wherein: the waveguide channel is at least partially positioned between the first plurality of vias and the second plurality of vias; the waveguide channel defines a channel length and a channel width; the channel length is greater than the channel width; and the channel length is greater than the waveguide width.

Methods, apparatuses, and computer readable media for dynamic puncturing with dynamic signaling are disclosed. Apparatuses of a non-access point (AP) station (STA) or of an AP are disclosed, where the apparatuses comprise processing circuitry configured to: decode a first physical (PHY) protocol data unit (PPDU) in accordance with a first channel width and first inactive subchannels, and encode a second PPDU, in response to the first PPDU, with a second channel width that is the same as or narrower than the first channel width and in accordance with second inactive subchannels, the second inactive subchannels being the same as or indicating a wider set of punctured subchannels than the first inactive subchannels. The processing circuitry is further configured to configure the non-AP STA to transmit the second PPDU in accordance with the second channel width and the second inactive subchannels.

The invention relates to a control method based on a self-adaptive storage backboard, the self-adaptive storage backboard and a device, and the method comprises the steps: collecting a side-band signal, an out-of-band signal and the state of a PCIe link training and state machine when a slot insertion or topology change event is detected, and carrying out the analysis and processing of the signals, and obtaining a recognition result of a slot; configuring a high-speed differential cross matrix of the storage backboard based on a slot identification result so as to switch slot attribution among a plurality of main control domains of a channel, splicing and binding or splitting the channel width as required, and performing sequence adjustment and polarity remapping on the channel; a reference clock source of the slot is switched to a matching mode in a burr-free mode through a phase alignment and gating technology; obtaining a link margin of the PCIe link and an equalizer parameter, and writing the link margin and the equalizer parameter into a nonvolatile memory to form a slot portrait; and completing the power supply and power-on of the slot under the control of the pre-charging and eFuse device. According to the invention, on the premise of supporting multi-protocol mixed insertion, the signal quality and reliability are ensured at the same time.

This invention discloses a millimeter-wave ultra-wideband gapped waveguide mechanical synchronous phase-shifting feed device with anisotropic pulse width modulation, belonging to the field of microwave and millimeter-wave antenna technology. The device includes a stacked top cover plate, an intermediate layer, a fixed base plate, and a movable base plate. Fixed and movable pins are arranged alternately to form four rectangular waveguide channels. When the movable base plate is translated, the width of the first channel decreases to achieve phase lead, while the width of the remaining channels increases to achieve phase delay, forming anisotropic pulse width modulation offset to counteract nonlinear phase disturbances. The intermediate layer integrates stepped transitions, cross-shaped transition ridges, and oblique ridge waveguides to achieve cross-layer broadband coupling and path compensation. The power divider is loaded with capacitive grooves and inductive steps, and the second stage uses asymmetric steps and tuning pillars to achieve tapered distribution. An electromagnetic bandgap structure is provided at the gap to suppress leakage. This invention achieves compact, low-error multi-channel synchronous phase shifting in the 32-42 GHz frequency band.

Disclosed are a method and device for transmission or reception on a channel with respect to a wide bandwidth in a wireless LAN system. The method performed by a first station (STA) in a wireless LAN system according to an embodiment of the present disclosure may include the steps of: generating a PPDU within a bandwidth belonging to a predefined frequency band; and transmitting the PPDU on a predetermined channel corresponding to a channel width smaller than the bandwidth.

A Peripheral Component Interconnect Express (PCIe) system and method achieves reduced power consumption and latency. When the link transitions from an active functional state in which the link has a first configuration of N active channels to a power saving state, the number of active channels is narrowed such that M of the N channels remain in the active power saving state and P of the N channels remain in an electrically idle state, where M, N and P are positive integers, and Ngt; pgt; m. The reduction in channel width reduces power consumption. A bit value specifying a current link configuration may be saved in the control register and read and compared to bit values contained in the link control register prior to transitioning back to the active function state. And under the condition that the bit values are matched, the active function state is directly recovered from the recovery state, so that the time delay is reduced.

During operation, an access point may receive, associated with other access points, information specifying one or more communication-performance metrics associated with the shared band of frequencies. Then, based at least in part on the one or more communication-performance metrics, the access point may determine a proposed channel and / or a proposed channel width for use by the access point during communication in a shared band of frequencies. Moreover, the access point may provide, addressed to the other access points, second information specifying the proposed channel and / or the proposed channel width. Next, the access point may receive, associated with the other access points, feedback about the proposed channel and / or the proposed channel width. Furthermore, based at least in part on the feedback, the access point may select a channel and / or a channel width for use by the access point during communication in the shared band of frequencies.

The application discloses a Josephson junction and a manufacturing method thereof. The manufacturing method comprises the following steps: forming a mask on a substrate, the mask having a window exposing the substrate, a first channel and a second channel, the first channel and the second channel extending along a first direction and a second direction perpendicular to each other respectively, and both of the first channel and the second channel communicating with the window; performing inclined film plating along the first direction to form a first superconducting plate in the window and a first superconducting wire connecting the first superconducting plate in the first channel; forming a barrier layer on the surface of the first superconducting plate; and performing inclined film plating along the second direction to form a second superconducting plate at least partially located on the barrier layer in the window and a second superconducting wire connecting the second superconducting plate in the second channel. The application can eliminate the restriction of the channel width on the resistance of the Josephson junction, and is particularly suitable for manufacturing the Josephson junction with small resistance.

Methods, apparatus, systems and articles of manufacture are disclosed to generate a management frame identifying an operation mode for a basic service set of a local area network. An example disclosed method includes performing an assessment of a wireless network and determining an operation mode for a basic service set (BSS) bandwidth based on the assessment, the operation mode indicating continuity of a primary segment, a secondary segment, a tertiary segment and a quaternary segment. The example method further includes creating a management frame including information fields based on the BSS bandwidth, the information fields including a first channel width field, a second channel width field, a third channel width field, a first center frequency field, a second center frequency field and a third center frequency field and transmitting the management frame over the wireless network.

The invention provides a semiconductor structure, a preparation method thereof, a device and electronic equipment. The semiconductor structure comprises a first transistor; the first transistor comprises a first channel structure and a first source-drain epitaxy; the first channel structure comprises a plurality of first nanosheets which are stacked at intervals in the first direction; a second transistor; the first transistor and the second transistor are adjacently arranged in a second direction, and the second direction is perpendicular to the first direction; the second transistor comprises a second channel structure and a second source-drain epitaxy; the second channel structure comprises a plurality of second nanosheets which are stacked at intervals in the first direction; wherein the channel widths of the first channel structure and the second channel structure are the same; a first contact height between the first source-drain epitaxy and the first channel structure is different from a second contact height between the second source-drain epitaxy and the second channel structure.

An access point may include a processing device configured to: identify a puncturing pattern for a channel width of a physical layer protocol data unit (PPDU) of a transmit signal; compute one or more tone rotation patterns using one or more tone rotation pattern parameters; and select a tone rotation pattern of the one or more tone rotation patterns based on the puncturing pattern for the channel width to minimize a peak to average power ratio (PAPR) of the transmit signal. The access point may include a transceiver configured to transmit the transmit signal to a wireless device based on the tone rotation pattern.

The invention relates to an SPICE model extraction method for improving reverse bias pn junction leakage current precision, and the method comprises the steps: adding a mathematical fitting formula related to the size to a key parameter jtssgd for adjusting the reverse bias pn junction leakage current in a BSIM4 model, introducing fitting parameters which are strongly related to the effective channel length, the effective channel width and the device area of a device, and carrying out the extraction of the reverse bias pn junction leakage current precision. The method can accurately capture and fit the complex behavior of the leakage current along with the size change of the device, achieves the accurate modeling of the cut-off leakage current caused by the reverse bias pn junction through the adjustment of the fitting parameters, and improves the simulation precision of the model for the cut-off leakage current of devices of different sizes.

A communication apparatus compliant with a standard of IEEE 802.11 series includes a communication unit that transmits operation information related to wireless communication to other communication apparatuses. The operation information includes frequency bandwidth information for the wireless communication. The frequency bandwidth information is included in a channel width field contained in an EHT operating field of a frame compliant with the standard of IEEE 802.11 series. The frequency bandwidth is indicated using a value selected from a plurality of values including at least a first value and a second value, where the first value indicates a frequency bandwidth of 160 MHz and the second value indicates a frequency bandwidth of 320 MHz.

The present disclosure proposes a method and an apparatus for transmitting capability information of a receiving STA in a wireless LAN system. Specifically, the receiving STA generates capability information of the receiving STA and transmits same to a transmitting STA. The capability information of the receiving STA includes an HE capabilities element and an EHT capabilities element. The HE capabilities element includes a supported channel width set field. The EHT capabilities element includes a supported EHT-MCS and NSS set field. The supported EHT-MCS and NSS set field includes first to fourth subfields. The first subfield includes information on the maximum number of spatial streams that the receiving STA can transmit and receive in each MCS when the receiving STA is a non-AP STA that operates only at 20 MHz and is allocated to a first transmission bandwidth.

The application discloses a diamond variable threshold field effect transistor with adjustable channel width, comprising an N-type diamond substrate, a P-type diamond epitaxial layer, a P+ type diamond epitaxial layer, a source electrode, a drain electrode, a gate dielectric layer, a gate electrode and a back electrode, wherein the P-type diamond epitaxial layer is arranged on the upper surface of the N-type diamond substrate; the P+ type diamond epitaxial layer is arranged on the left and right sides of the upper surface of the P-type diamond epitaxial layer respectively, the source electrode and the drain electrode are arranged on the P+ type diamond epitaxial layer on the left and right sides respectively, and the P+ type diamond epitaxial layer forms ohmic contact with the source electrode and the drain electrode above it respectively; the gate dielectric layer is arranged on the upper surface of the P-type diamond epitaxial layer which is not covered by the P+ type diamond epitaxial layer, and the gate electrode is arranged on the upper surface of the gate dielectric layer; and the back electrode is arranged on the lower surface of the N-type diamond substrate. The diamond field effect transistor has the advantages of high thermal conductivity, high radiation resistance, flexible selectivity of depletion type and enhancement type and the like.

To provide a transistor in which a short channel effect does not substantially occur and switching characteristics can be obtained even when a channel length is small. A highly integrated semiconductor device including the transistor is provided.SOLUTION: The channel length is greater than or equal to 5nm and less than 60nm, and the channel length is greater than or equal to 5nm and less than 200nm. At this time, the channel width is greater than or equal to 0.5 times and less than or equal to 10 times the channel length.SELECTED DRAWING: Figure 1

The invention discloses an LDMOS and a forming method thereof. The forming method comprises the following steps: forming a substrate; a body region, wherein the body region is located in the substrate; a gate structure, wherein a part of the gate structure is located right above the body region; the first doped region is located in the portion, on one side of the gate structure, of the body region, and the doping type of the first doped region is different from that of the body region; and the external doped region is located in the body region at one side, far away from the gate structure, of the first doped region, the external doped region extends along the extension direction of the gate structure, and the doping type of the external doped region is the same as that of the body region. According to the arrangement mode that the external doped region extends in the extending direction of the gate structure, the phenomenon of mutual dissolution of doped ions can be effectively reduced, and the effective channel width can be effectively increased so as to reduce the turn-on resistance.

A method (300) comprising the following: Received (302), through an access point (AP), a distance measurement request to initiate a fine time measurement (FTM) session, wherein the distance measurement request originates from a client device; in response to receiving the distance measurement request, determine (310) whether a traffic load at the AP is higher than a traffic load threshold; in response to the finding that the traffic load is higher than the traffic load threshold, Reject (306) the distance measurement request; In response to determining that the traffic load is less than or equal to the traffic load threshold, the AP changes (322) a channel width of a WLAN (Wireless Local Area Network) channel on which the AP is operating, from a first channel width to a second channel width to conduct the FTM session, the second channel width being greater than the first channel width; and In response to the termination of an FTM burst associated with the FTM session, Restore (328) by the AP, the WLAN channel width is reduced to the first channel width to allow the AP to perform non-FTM operations.

A semiconductor structure and a forming method thereof, wherein the semiconductor structure comprises: a channel structure, comprising a first channel structure which is spaced and suspended above the first protruding part, the first channel structure comprising one or more first channel layers which are sequentially and spaced, the first channel layers are stacked in a direction perpendicular to the substrate surface; and along the arrangement direction of the first protruding part, the first channel layer is a wave-shaped structure with a <111> crystal plane, in the semiconductor field, the hole mobility of the channel of the PMOS device in the <111> crystal plane is greater than that in the <100> crystal plane, so that the embodiment of the present application can provide the PMOS device with a channel with a <111> crystal plane, which is conducive to improving the channel mobility of the PMOS device, and the first channel layer is a wave-shaped structure, which is also conducive to increasing the effective channel width of the PMOS device; in summary, the embodiment of the present application is conducive to improving the performance of the semiconductor structure.

The invention provides a fin gate structure LDMOS (Laterally Diffused Metal Oxide Semiconductor) device and a manufacturing method thereof. The device comprises: a semiconductor substrate having a buried layer and an epitaxial layer; an isolation structure; a drift region and a well region; and a source region, a drain region and a body contact region. The device is provided with a groove extending along the width direction of the device in an active region; and a gate structure covers the surface of the active region and fills the groove, and a fin-type gate is formed at the groove. According to the structure, conductive channels are formed on the upper surface of the active region and the side walls and the bottom surfaces of the trenches when the device is conducted. The trench structure is introduced in the width direction of the device, so that the effective channel width in unit area is increased, and the on-resistance is remarkably reduced on the premise that the layout area of the device is not increased.