1021 results about "Stress relaxation" patented technology

The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film. As a result, a crack due to stress hardly occurs.

An orthopedic screw with an internal bore and mating driver has a bioabsorbable polymer component. To increase the torque tolerance of the screw and to minimize the likelihood of the driver stripping inside the bore of the screw, the screw and driver are heat treated together to shrink fit the screw onto the driver thereby increasing the driver-to-screw contact and distributing the loading force over a greater area to protect against material failure. The heat treatment involves heating the screw to an elevated temperature and holding that temperature for a period to promote stress relaxation and / or crystallization of the material.

The invention discloses a SiGe (silicon germanium) source and drain area manufacturing method. A multi-layer structure which comprises alternately stacked buffer layers and main body layers is formed by a method that the SiGe epitaxial growth of the buffer layer and the main body layers is alternated repeatedly and accordingly the thickness of every high Ge concentration of SiGe main body layer is effectively reduced and shared into every layer of main body layer and accordingly the stress relaxation due to the fact that thickness of every main body layer exceeds the critical thickness is avoided; the Ge content of every layer of SiGe main body layer is further improved to enable the stress of the SiGe source leakage on a channel to be increased; an SiGe process window is enlarged due to the repeated epitaxy and accordingly the process stability is enhanced and accordingly the device performance is improved; the stress can be effectively improved without increase of the process difficulty and accordingly the process is stable and controllable and the cost is low.

A light emitting device which is capable of suppressing deterioration by diffusion of impurities such as moisture, oxygen, alkaline metal and alkaline earth metal, and concretely, a flexible light emitting device which has light emitting element formed on a plastic substrate. On the plastic substrate, disposed are two layers and more of barrier films comprising a layer represented by AlNxOy which is capable of blocking intrusion of moisture and oxygen in a light emitting layer and blocking intrusion of impurities such as an alkaline metal and an alkaline earth metal in an active layer of TFT, and further, a stress relaxation film containing resin is disposed between two layers of barrier films.

A bump for a semiconductor package forms a polymer layer having multiple vias on an electrode pad above a semiconductor chip to increase an electrical contact area between the electrode pad and a metal bump. Further, the bump forms a polymer layer having multiple vias on a redistribution electrode pad to increase a surface area of an electrode interconnection. The multiple vias increase electrical and mechanical contact areas, thereby preventing current crowding and improving joint reliability. The bump for a semiconductor package may further comprise a stress relaxation layer at the lower portion of the bump.

In a conventional semiconductor light-emitting device having a semiconductor light-emitting element-mounted body and an optical lens which are located adjacent each other, interfacial peeling sometimes occurs at the contact interfaces between components when the device is subjected to outside temperature changes. This may lead to the deterioration of optical characteristics and the reduction in reliability of the device. In accordance with an aspect of the disclosed subject matter, a semiconductor light-emitting element-mounted body can be integrated with the optical lens via a soft resin spacer. Hence, the soft resin spacer can serve as a thermal stress relaxation layer located between the semiconductor light-emitting element-mounted body and the optical lens, which are integrated together. The thermal stress relaxation layer can possibly prevent peeling, caused by thermal stresses due to outside temperature changes, from occurring at the interfaces between the components.

The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film. As a result, a crack due to stress hardly occurs.

The invention relates to GaN-based Single chip white light emitting diode epitaxial material comprising a substrate and also comprising an initial growth layer, an intrinsic GaN buffer layer, an n-type GaN layer, a stress relaxation layer, an InGaN multiple quantum well structure light emitting layer, a p-type AlGaN sandwich layer and a p-type GaN layer which grow in sequence on the substrate. Thestress relaxation layer is an InGaN / GaN superlattice stress modulation layer which comprises InGaN layers and GaN layers, which are grown alternatively; the InGaN layers and GaN layers have the growth cycle of 6-500 and the corresponding thickness of 10 nm to 3 Mum; and the In components in the InGaN layers are in the range of 1-35 percent. Because the stress-relaxed InGaN / GaN superlattice stressmodulation layer is added between the n-type GaN layer and a multiple quantum light emitting layer, the In segregation effect is strengthened, InGaN quantum dots with different components are formed,and the mixing of different-wave light emitted by the InGaN quantum dots realizes the white light emitting. The cost of the white light emitting diode is reduced radically, the light emitting efficiency and the light using efficiency are increased and the integral performance of the white light emitting diode is improved.

A semiconductor device and a manufacturing method thereof, which device includes a semiconductor element arranged to form integrated circuitry, a plurality of electrode pads formed on the side of the integrated circuitry formation surface of the semiconductor element, bump electrodes for electrically connecting to the electrode pads through a conductive layer, and a stress relaxation layer formed between the integrated circuitry formation surface and electrode pads on one hand and the bump electrodes and conductive layer on the other hand, the stress relaxation layer being adhered thereto, wherein more than one third of the stress relaxation layer from a surface thereof is cut away for removal and wherein the stress relaxation layer is subdivided into a plurality of regions. Accordingly, it is possible to provide a semiconductor device capable of offering high density mounting schemes with increased reliability while reducing production costs.

The polymeric shell of a removable dental positioning appliance is formed from transparent polymeric materials having a tensile strength at yield of greater than 6,000 pounds per square inch (psi), an elongation at yield of greater than 4%, an elongation at break of greater than 80%, a tensile modulus greater than 200,000 psi, a flexural modulus greater than 200,000 psi, stress relaxation over time of not more than 50%, and a transmissivity of light between 400 nm and 800 nm greater than 75%.

The present invention provides a pressure sensitive adhesive composition for optical members, which is excellent in durability, re-releasability and stress relaxation, as well as a pressure sensitive adhesive composition for optical members, which hardly increases adhesion after storage for a long time and does not leave a residual adhesive on glass upon disposal or repair. The pressure sensitive adhesive composition for optical members according to the present invention comprises 100 parts by weight of an acrylic polymer (A) having a weight-average molecular weight of 500,000 or more, containing at least 50 wt % alkyl (meth)acrylate having an alkyl group with 5 or more carbon atoms and 0.2 to 2 wt % unsaturated carboxylic acid as the monomer unit, 0.1 to 4 parts by weight of an acrylic polymer (B) having a weight-average molecular weight of 2,000 to 50,000, containing at least 70 wt % alkyl(meth)acrylate and 1 to 7 wt % unsaturated carboxylic acid as the monomer unit and having a higher carboxylic acid equivalent than that of the acrylic polymer (A), 0.01 to 1 part by weight of a silane coupling agent, and a crosslinking agent.

An elastic material that lowers extension tension over a given range without a significant impact on the retractive tension or stress relaxation. The elastic laminate includes a first set of elastic members attached to one or more substrates while the elastic members are stretched, and a second set of elastic members or an elastic film attached to the one or more substrates while the elastic members or film are stretched to a different extent than the first set of elastic members. Both the substrate(s) and one of the sets of elastic members or film are gathered when the other set of elastic members or film is relaxed. Also included is a method of making the differentially-stretched elastic laminate.

The present invention includes a semiconductor element provided with an electrode passing through front and back sides. The electrode is formed as a cylinder including a hollow portion, and stress relaxing material is provided in the hollow portion, which is used to reduce stress that is induced between the semiconductor element and the electrode. The stress relaxing material is an elastic body made of resin material.

A light emitting element having an organic compound, which can be extended its longevity is provided. According to the present invention, there is provided a constitution in which, in order to protect a light emitting element from moisture, an inorganic insulating film 312a, a stress relaxation layer 312b having transparency and a hygroscopic property, and an inorganic insulating film 312c are repeatedly laminated over a cathode. The stress relaxation layer 312b having transparency and the hygroscopic property uses at least one film selected from the group consisting of a film comprising a same material as that of a layer 310, containing an organic compound, sandwiched between a cathode and an anode, a layer capable of being formed by vapor deposition, and a layer capable of being formed by coating.

There is provided a semiconductor device including a semiconductor chip which includes a semiconductor substrate and a multilayer interconnection structure formed thereon, the multilayer interconnection structure including an interlayer insulating film smaller in relative dielectric constant than an SiO2 film, an encapsulating resin layer which covers a major surface of the semiconductor chip on a side of the multilayer interconnection structure and covers a side surface of the semiconductor chip, and a stress relaxing resin layer which is interposed between the semiconductor chip and the encapsulating resin layer, covers at least a part of an edge of the semiconductor chip on the side of the multilayer interconnection structure, and is smaller in Young's modulus than the encapsulating resin layer.

The present invention provides a safe ocular lens material having high oxygen permeability, excellent surface wettability, the excellent lubricity / easy lubricating property of surface, little in surface adhesive and superior flexibility and stress relaxation, in addition, suppressing elution of a monomer from the final product. That is, the present invention relates to an ocular lens material comprising at least one kind of a compound (A) having an ethylenically unsaturated group and polydimethylsiloxane structure through a urethane bond and at least one kind of a pyrrolidone derivative (B) in which a polymerizable group is a methylene group.

Stress in a silicon nitride contact etch stop layer on a CMOS structure having NMOS and PMOS devices is selectively relieved by selective implantation of oxygen-containing or carbon-containing ions resulting in there being no tensile stress in areas of the layer above the PMOS devices and no compressive stress in areas of the layer above the NMOS devices.

A structure and method of fabrication of a semiconductor device, where a stress layer is formed over a MOS transistor to put either tensile stress or compressive stress on the channel region. The parameters such as the location and area of the contact hole thru the stress layer are chosen to produce a desired amount of stress to improve device performance. In an example embodiment for a tensile stress layer, the PMOS S / D contact area is larger than the NMOS S / D contact area so the tensile stress on the PMOS channel is less than the tensile stress on the NMOS channel. In an example embodiment for a compressive stress layer, the NMOS contact area is larger than the PMOS contact area so that the compressive stress on the NMOS channel is less than the compressive stress on the PMOS channel.

A deposition mask with which position precision of a passage hole is improved and deposition can be conducted precisely and a manufacturing method thereof are provided. A mask body made of a metal thin film is fixed and tightly mounted on a frame body having an opening. The mask body has at least one pattern region including a plurality of passage holes for letting through a deposition material, a stress relaxation region including a plurality of fine holes provided at the periphery of the pattern region, and a holding region provided at the periphery of the stress relaxation region. The mask body is tightly mounted on the frame body at a holding region.

A piezoelectric vibrator has a laminated structure where silicon oxide films having substantially the same thickness are disposed at both faces of piezoelectric plate as dielectric films. Using the structure discussed above, because dielectric films are formed at the both faces of the piezoelectric plate a difference of internal stress, which is caused by a difference of stress relaxation in a long term and affects the piezoelectric plate or the dielectric film, becomes small. Therefore, a warp can be considerably small. As a result, a change, which is caused by the warp of the piezoelectric vibrator, in a resonance frequency of the piezoelectric vibrator can be small.

Roughly described, methods and systems for improving integrated circuit layouts and fabrication processes in order to better account for stress effects. Dummy features can be added to a layout either in order to improve uniformity, or to relax known undesirable stress, or to introduce known desirable stress. The dummy features can include dummy diffusion regions added to relax stress, and dummy trenches added either to relax or enhance stress. A trench can relax stress by filling it with a stress-neutral material or a tensile strained material. A trench can increase stress by filling it with a compressive strained material. Preferably dummy diffusion regions and stress relaxation trenches are disposed longitudinally to at least the channel regions of N-channel transistors, and transversely to at least the channel regions of both N-channel and P-channel transistors. Preferably stress enhancement trenches are disposed longitudinally to at least the channel regions of P-channel transistors.

A heat radiator 1 includes an insulating substrate 3 whose first side serves as a heat-generating-element-mounting side, and a heat sink 5 fixed to a second side of the insulating substrate 3. A metal layer 7 is formed on a side of the insulating substrate 3 opposite the heat-generating-element-mounting side. A stress relaxation member 4 intervenes between the metal layer 7 of the insulating substrate 3 and the heat sink 5. The stress relaxation member 4 is formed of an aluminum plate 10 having a plurality of through holes 9 formed therein, and the through holes 9 serve as stress-absorbing spaces. The stress relaxation member 4 is brazed to the metal layer 7 of the insulating substrate 3 and to the heat sink 5. This heat radiator 1 is low in material cost and exhibits excellent heat radiation performance.

The invention relates to a methyl acrylate pressure-sensitive adhesive for an LCD polarizer and a preparation method thereof, which belong to the technical field of tackiness agent. The pressure-sensitive adhesive comprises the following three materials with the quality shares: a. weight average molecular weight Mw is 100000-2000000, dispersion degree Mw / Mn is 4-20 acrylate copolymer 100 shares, b. coupling agent, c. cross linker 0-15 shares, the comonomer of prepared acrylate copolymer comprises two parts: 1. (methyl) acrylate monomer : 90%-99.5%, 2. functional monomer: 0.5%-10%, wherein the functional monomer is one or several of (methyl) acroleic acid and (methyl) acroleic acid hydroxy ethyl, (methyl) acroleic acid hydroxypropyl acrylate, itaconic acid, acrylamide, N-hydroxymethyl acrylamide and maleic anhydride. The methyl acrylate pressure-sensitive adhesive does not contain elasticizer or low-molecular-weight acrylate copolymer and the like, can reach the use requirement without cross linker under the condition that the requirement to sticking property is low, and the glue layer has better stress relaxation property, and pressure-sensitive adhesive initial adhesion and stripping strength are both extremely ideal.

Systems and methods for promoting ischemic preconditioning in individuals are provided. Ischemic preconditioning is provided by exercise treatments. The exercise treatments consist of breathing exercise regimens with breathing sequences of oxygenating and non-oxygenating phases co-ordinated with stress-relaxation cycles. The breathing sequences are designed to induce periods of ischemia. The individualized exercise treatments can induce optimal number of periods of ischemia separated by suitable intervals to provide effective ischemic preconditioning.

The invention provides a shrinkage creep and prestress loss computation method of a concrete bridge. According to the invention, the shrinkage creep and prestress loss computation method of the concrete bridge, in which the time variation and the uncertainty are simultaneously considered, is obtained by analyzing the time variation of concrete through utilizing an age-adjusted effective modulus method (AEMM) and analyzing the uncertainty of the concrete through utilizing an accurate and rapidly-sampled Latin hypercube sampling (LHS) method; a prestress loss computation formula in which the time variation and the uncertainty of shrinkage creep and the interaction between the shrinkage creep and reinforcement stress relaxation are simultaneously considered is deduced according to a prestressed reinforcing steel and concrete stress balance equation and deformation coordination conditions and on the basis of the AEEM method and the LHS method; and a prestress loss computation method of the concrete bridge, in which the shrinkage creep and the stress relaxation are considered, is formed. In the structural internal force value field interval computed according to the shrinkage creep and prestress loss computation method disclosed by the invention, the unfavorable stress state of the bridge structure can be considered from multiple aspects in the designing process, so that the reliability of structure computation result is higher and the structure safety is better.

An electrochemical generator comprising thin films including a positive electrode and its collector, and a sheet of a host metal intended to later on constitute a negative electrode, as well as an electrolyte which is conductive towards alkaline ions and also a source of alkali ions. The sheet of the host metal has voids whose quantity and arrangement are capable of locally absorbing any lateral expansion of the sheet of host metal and thereby substantially preventing all cumulative change in the plane of the sheet of host metal when there is an initial formation of alloy in the sheet between the host metal and an alkali metal which is brought about by the alkaline ions. A method of manufacturing such a generator is also described.

A turbomachine combustion chamber has primary and dilution air inlet orifices formed by die stamping to have edges that project into the inside of the combustion chamber, and stress relaxation and / or reduction means in the edges or in the vicinity of the edges of said orifices, said means comprising, for each orifice, one, two, or three slots formed in the edge or around a fraction of the edge of said orifice.

The present invention provides a pneumatic tire that inhibits any fatigue rupture at an edge portion of a circumferential-direction reinforcing belt layer and also inhibits any separation at an edge portion of crossed belt layers. In the pneumatic tire, at least two crossed belt layers are disposed on the outer circumferential side of a carcass layer in a tread portion. At least one circumferential-direction reinforcing belt layer with a width smaller than those of the crossed belt layers is disposed between the crossed belt layers. Moreover, a stress relaxation layer of a rubber composition having a fixed thickness is disposed between the crossed belt layers while lying adjacent to an edge portion of and outside, in the width directions of, the circumferential-direction reinforcing belt layer.