167 results about "Current crowding" patented technology

A bump for a semiconductor package forms a polymer layer having multiple vias on an electrode pad above a semiconductor chip to increase an electrical contact area between the electrode pad and a metal bump. Further, the bump forms a polymer layer having multiple vias on a redistribution electrode pad to increase a surface area of an electrode interconnection. The multiple vias increase electrical and mechanical contact areas, thereby preventing current crowding and improving joint reliability. The bump for a semiconductor package may further comprise a stress relaxation layer at the lower portion of the bump.

A lateral conduction Schottky diode includes multiple mesa regions upon which Schottky contacts are formed and which are at least separated by ohmic contacts to reduce the current path length and reduce current crowding in the Schottky contact, thereby reducing the forward resistance of a device. The multiple mesas may be isolated from one another and have sizes and shapes optimized for reducing the forward resistance. Alternatively, some of the mesas may be finger-shaped and intersect with a central mesa or a bridge mesa, and some or all of the ohmic contacts are interdigitated with the finger-shaped mesas. The dimensions of the finger-shaped mesas and the perimeter of the intersecting structure may be optimized to reduce the forward resistance. The Schottky diodes may be mounted to a submount in a flip chip arrangement that further reduces the forward voltage as well as improves power dissertation and reduces heat generation.

Provided is a multiple-gate metal oxide semiconductor (MOS) transistor and a method for manufacturing the same, in which a channel is implemented in a streamline shape, an expansion region is implemented in a gradually increased form, and source and drain regions is implemented in an elevated structure by using a difference of a thermal oxidation rate depending on a crystal orientation of silicon and a geographical shape of the single-crystal silicon pattern. As the channel is formed in a streamline shape, it is possible to prevent the degradation of reliability due to concentration of an electric field and current driving capability by the gate voltage is improved because the upper portion and both sides of the channel are surrounded by the gate electrodes. In addition, a current crowding effect is prevented due to the expansion region increased in size and source and drain series resistance is reduced by elevated source and drain structures, thereby increasing the current driving capability.

A semiconductor device contact structure practically eliminating the copper diffusion into the solder as well as the current crowding at the contact with the subsequent electromigration in the solder. A column-like electroplated copper stud (108) is on each contact pad. The stud is sized to provide low, uniform electrical resistance in order to spread the current from the contact to an approximately uniform, low density. Preferably, the stud height (108a) is at least ten times the thickness of the copper interconnect layer (104). Stud (108) is capped by an electroplated nickel layer (109) thick enough (preferably about 2 μm) to suppress copper diffusion from stud (108) into solder body (120), thus practically inhibiting intermetallic compound formation and Kirkendall voiding.

Superconducting nanowire avalanche photodetectors (SNAPs) have using meandering nanowires to detect incident photons. When a superconducting nanowire absorbs a photon, it switches from a superconducting state to a resistive state, producing a change in voltage that can be measured across the nanowire. A SNAP may include multiple nanowires in order to increase the fill factor of the SNAP's active area and the SNAP's detection efficiency. But using multiple meandering nanowires to achieve high fill-factor in SNAPs can lead to current crowding at bends in the nanowires. This current crowding degrades SNAP performance by decreasing the switching current, which the current at which the nanowire transitions from a superconducting state to a resistive state. Fortunately, staggering the bends in the nanowires reduces current crowding, increasing the nanowire switching current, which in turn increases the SNAP dynamic range.

The invention provides an integrated circuit structure and a formation method thereof, and the structure comprises a first portion in which a semiconductor substrate is contained in a first element region, and a second portion in which a semiconductor substrate is contained in a second element region. A first semiconductor fin is over the semiconductor substrate and has a first fin height. A second semiconductor fin is over the semiconductor substrate and has a second fin height. The first fin height is greater than the second fin height. The invention has a positive effect on the reduction of the current crowding at the source electrode and the drain electrode regions. Because of the volume increase of the stress source electrode and the drain electrode regions, the tension and the compression strain on the channel region of a fin-type field effect transistor are increased.

A bump for a semiconductor package forms a polymer layer having multiple vias on an electrode pad above a semiconductor chip to increase an electrical contact area between the electrode pad and a metal bump. Further, the bump forms a polymer layer having multiple vias on a redistribution electrode pad to increase a surface area of an electrode interconnection. The multiple vias increase electrical and mechanical contact areas, thereby preventing current crowding and improving joint reliability. The bump for a semiconductor package may further comprise a stress relaxation layer at the lower portion of the bump.

A Method for manufacturing semiconductor devices having ESD protection. The method includes the steps of providing a semiconductor substrate having a well region, forming a gate structure on the semiconductor substrate, the gate structure including an oxide layer, a gate electrode on said oxide layer, and two spacer sidewalls, forming a source region within the well region at one side of the gate structure, forming a drain region within the well region at the other side of the gate structure, forming lightly doped source / drain regions in the well region and beneath the spacer walls of the gate structure wherein the lightly doped source / drain regions have the same conductivity type as the drain region and, and performing an implant with the same conductivity type as the well region as to form an ESD implantation region. The ESD implantation region is located under the diffusion region that is between the drain contact and the poly gate of output NMOS, but without covering the region right under the drain contact. Therefore, the ESD current is discharged through the ESD-implanted region to the substrate without causing current crowding under the drain contact as to burn out the drain contact.

Based on the unique properties of the flip chip packaging process and GaN based LEDs with transparent substrates, new principles and methods for designing the layout of P contact pads and N contact pads are disclosed. The new designs of the present invention drastically increase the light extraction efficiency of LEDs by reducing the current crowding effect, increasing the uniformity of the spreading current in the active layer, and utilizing most of the available light emitting semiconductor material of the active layer. The present invention combined with the flip chip packaging process significantly improves the LEDs' heat dissipation.

This invention provides a process for protecting solder joints, comprising forming an UBM or pad metallurgy in solder joints and then further forming a small solder bump on UBM or pad metallurgy between substrate and chip. Wherein a material of high electric resistance is coated at the ends of UBM or pad metallurgy where substrate is connected to chip, as to equalize the current distribution of solder bump, therefore the electromigration resistance of solder joints is improved by suppressing the current crowding and joule heating phenomenon.

In sophisticated integrated circuits, an electronic fuse may be formed such that an increased sensitivity to electromigration may be accomplished by including at least one region of increased current density. This may be accomplished by forming a corresponding fuse region as a non-linear configuration, wherein at corresponding connection portions of linear segments, the desired enhanced current crowding may occur during the application of the programming voltage. Hence, increased reliability and more space-efficient layout of the electronic fuses may be accomplished.

Electrically programmable fuse structures and methods of fabrication thereof are presented, wherein a fuse includes first and second terminal portions interconnected by an elongate fuse element. The first terminal portion has a maximum width greater than a maximum width of the fuse element, and the fuse includes a narrowed width region where the first terminal portion and fuse element interface. The narrowed width region extends at least partially into and includes part of the first terminal portion. The width of the first terminal portion in the narrowed region is less than the maximum width of the first terminal portion to enhance current crowding therein. In another implementation, the fuse element includes a restricted width region wherein width of the fuse element is less than the maximum width thereof to enhance current crowding therein, and length of the restricted width region is less than a total length of the fuse element.

A fuse structure is described. The fuse structure includes a first region adapted to be coupled to a voltage source, a second region adapted to be coupled to a ground, and a current flow region disposed between the first and second regions. The current flow region has a configuration that causes a void to be opened at a point of localized heating due to current crowding within the current flow region and that causes the void to propagate across the current flow region.

The invention discloses a nitride light emitting diode having a composite double current spreading layer. The composite double current spreading layer is a composite semiconductor layer which consists of a first current spreading layer and a second current spreading layer in a sequentially superposed manner; the first current spreading layer is formed on a distribution insulated layer of an n-type nitride semiconductor layer and the second current spreading layer is formed by mutually superposing u-type nitride semiconductor layers and n-type nitride semiconductor layers; and the composite double current spreading layer is connected with the n-type nitride semiconductor layers and an active layer respectively. In the composite double current spreading layer arranged on the nitride light emitting diode, the current can be distributed over the entire light emitting area quite evenly to avoid current crowding, therefore, both the light emitting efficiency of a nitride light emitting diode assembly and the electrostatic breakdown voltage can be raised effectively.

The present disclosure provides various embodiments of light emitting chips and packages with improved current spreading structures, such as non-uniform via structures or varied via structures. In some embodiments, these structures may be used to regulate current flow and current crowding in order to improve emitter efficiency and uniformity. Some embodiments of this disclosure may also refer to contact pad placement to improve current flow. In some embodiments of non-uniform via structures, the size of the vias may vary, whereas in other embodiments, the shape or spacing between the vias may vary.

A lateral conduction Schottky diode includes multiple mesa regions upon which Schottky contacts are formed and which are at least separated by ohmic contacts to reduce the current path length and reduce current crowding in the Schottky contact, thereby reducing the forward resistance of a device. The multiple mesas may be isolated from one another and have sizes and shapes optimized for reducing the forward resistance. Alternatively, some of the mesas may be finger-shaped and intersect with a central mesa or a bridge mesa, and some or all of the ohmic contacts are interdigitated with the finger-shaped mesas. The dimensions of the finger-shaped mesas and the perimeter of the intersecting structure may be optimized to reduce the forward resistance. The Schottky diodes may be mounted to a submount in a flip chip arrangement that further reduces the forward voltage as well as improves power dissertation and reduces heat generation.

A structure and method of fabricating a “Lego”-like interlocking contact for high wiring density semiconductors is characterized in that the barrier liner formed in the contact via extends only partially upwards into the adjacent wire level. As a consequence, current crowding and related reliability problems associated with conventional prior art interconnect structures is avoided and structural integrity of the contact via (metal stud) structure is enhanced. The novel “crown” shape of the Lego-like interlocking contact structure that is fabricated to extend in an upward direction may be employed for other integrated circuit applications including forming capacitor (e.g., MIMCAP) and heat sink structures due to its increased surface area.

A semiconductor device suffering fewer current crowding effects and a method of forming the same are provided. The semiconductor device includes a substrate, a gate over the substrate, a gate spacer along an edge of the gate and overlying a portion of the substrate, a diffusion region in the substrate wherein the diffusion region comprises a first portion and a second portion between the first portion and the gate spacer. The first portion of the diffusion region has a recessed top surface. The semiconductor device further includes a silicide layer on the diffusion region, and a cap layer over at least the silicide layer. The cap layer provides a strain to the channel region of the semiconductor device.

A multi-path stacked inductor for current compensation is represented in this invention. This structure includes top and bottom metal trace, which are aligned with each other. Each metal trace consists of multi paths. The inner path in top metal flips over to the outer path in the bottom metal, while the outer path in top metal flips over to the inner path in the bottom metal. These paths join together at the end of the metal trace with via holes. Skin effect and current crowding effect are reduced by means of this method. This stacked inductor possesses larger inductance than single layer spiral inductor, with relatively higher Q factor.

This invention this invention provides a light-emitting semiconductor device having enhanced brightness, to ensure even current distribution emitted by a front contact of the light emitting diodes so as to improve the light-emitting efficiency of the active layer. This invention adopts the method to manufacture the light-emitting device, comprising the steps of: forming an active layer on a substrate; forming a capping layer on the active layer to enhance current distribution, where a back contact is located on another side of the substrate and a front contact is located above the capping layer. This invention is characterized by: re-designing the front contact, by reducing the width of a metallic pattern constructing fingers or Mesh lines and increasing the number of the fingers or Mesh lines, so as to resolve the current crowding problem.

The invention discloses a manufacturing method of a top-gate oxide thin-film transistor. The top-gate oxide thin-film transistor comprises an oxide semiconductor layer, a source electrode and a drain electrode, the source electrode and the drain electrode respectively contact with the oxide semiconductor layer, and the oxide semiconductor layer is made of indium oxide, gallium oxide, zinc oxide or stannic oxide or binary or multibasic oxide of indium, gallium, zinc and stannum. The source electrode, the drain electrode and the oxide semiconductor layer are radiated by a variable magnetic field. Field effect migration rate of the top-gate thin-film transistor is high, and current crowding of the output characteristics is avoided when the drain electrode is at low voltage.

An electrical resistor having a resistance value and capable of withstanding high power surges, utilizing a thick film deposited on a substrate and trimmed with one or more cuts configured to maintain a level of current crowding while increasing the resistance value of the resistor. A surge resistor can be modified in a similar fashion.

The present invention discloses new flip chip assemblies and lamps for high power semiconductor chips or devices including GaN LEDs and a new wafer level flip chip packaging process for cost effectively manufacturing the same. The advantages of the new flip chip assemblies, lamps, and the wafer level flip chip package process are: (1) the fabricating process is simpler; (2) no need for expensive flip chip equipments; (3) the throughput is higher; (4) eliminating lattice mismatch between the substrate and the epitaxial layer by removing the substrate; (5) better thermal dissipation; (6) reduced current crowding effect and higher current density; (7) higher light extraction efficiency; (8) eliminating the totally internal reflection; and (9) eliminating the Fresnel reflection at the dome-air interface.

A MOS transistor having a highly stressed channel region and a method for forming the same are provided. The method includes forming a first semiconductor plate over a semiconductor substrate, forming a second semiconductor plate on the first semiconductor plate wherein the first semiconductor plate has a substantially greater lattice constant than the second semiconductor plate, and forming a gate stack over the first and the second semiconductor plates. The first and the second semiconductor plates include extensions extending substantially beyond side edges of the gate stack. The method further includes forming a silicon-containing layer on the semiconductor substrate, preferably spaced apart from the first and the second semiconductor plates, forming a spacer, a LDD region and a source / drain region, and forming a silicide region and a contact etch stop layer. A high stress is developed in the channel region. Current crowding effects are reduced due to the raised silicide region.

A semiconductor device suffering fewer current crowding effects and a method of forming the same are provided. The semiconductor device includes a substrate, a gate over the substrate, a gate spacer along an edge of the gate and overlying a portion of the substrate, a diffusion region in the substrate wherein the diffusion region comprises a first portion and a second portion between the first portion and the gate spacer. The first portion of the diffusion region has a recessed top surface. The semiconductor device further includes a silicide layer on the diffusion region, and a cap layer over at least the silicide layer. The cap layer provides a strain to the channel region of the semiconductor device.

This invention discloses one semiconductor light element and its process method, which The device has upper and down electrode structure through device light layer both sides two ohm electrodes relative space upper shape compensation or etching block light down part of semiconductor to reduce upper and down light parts current crowding situations.

The invention relates to a gallium nitride based light emitting diode chip and a preparation method thereof, and relates to a semiconductor device provided with at least one electric potential jumping barrier or a surface potential barrier and specially suitable for light emission. The gallium nitride based light emitting diode chip is structurally characterized in that an epitaxial wafer of a conventionally grown LED epitaxy structure in the industry of gallium nitride based light emitting diode chips serves as a substrate, the substrate comprises a sapphire substrate, a GaN buffer layer, a Si doped n type GaN layer, an InGaN / GaN multiple quantum well active area and a Mg doped p type GaN layer from bottom to top, then 1-6 layers of SiO2 / TiO2 distributed Bragg reflection structure layers are alternately deposited, then a composite metal Al film forms a reflected current barrier layer, and an ITO transparent conducting layer in the industry of the gallium nitride based light emitting diode chips is assembled at last. According to the gallium nitride based light emitting diode chip and the preparation method, the current crowding effect on a p metal electrode in the prior art is eliminated, and the problem of LED chip luminous efficiency reduction due to the fact that the metal electrode absorbs photons is resolved.

The present invention provides an elevator-calling control apparatus, an elevator-calling control system and an elevator-calling control method thereof, and belongs to the field of elevator control technologies. In an elevator-calling control process, the following steps are included: inputting an elevator-calling command; displaying elevator running state information and estimated time of arrival information of several elevators in a corresponding elevator group for a passenger to make reference, wherein the elevator running state information at least includes information that reflects a current crowding degree of the elevator; and selecting an elevator from the several elevators as the elevator that the passenger determines to take. The elevator-calling control of the present invention may facilitate a passenger to actively select an elevator that the passenger determines to take, which has good user elevator calling and taking experience and enhances the running efficiency of the elevator.

The invention discloses a preparation method for a quasi-vertical-structured GaN-based schottky diode, and belongs to the technical field of a semiconductor device. A highly-doped N-type GaN layer is grown on a growth substrate in an epitaxial way; a highly-doped N+ GaN layer is grown on the N-type GaN layer in an epitaxial way; ohmic contact is formed on the N+ GaN layer; and schottky contact is formed on an N- layer, and schottky contact is led to a positive electrode through an air bridge. By virtue of the preparation method, the series resistance of the device can be lowered, working frequency can be improved, and the problem of current crowding can be solved.

A laterally contacted blue LED device involves a PAN structure disposed over an insulating substrate. The substrate may be a sapphire substrate that has a template layer of GaN grown on it. The PAN structure includes an n-type GaN layer, a light-emitting active layer involving indium, and a p-type GaN layer. The n-type GaN layer has a thickness of at least 500 nm. A Low Resistance Layer (LRL) is disposed between the substrate and the PAN structure such that the LRL is in contact with the bottom of the n-layer. In one example, the LRL is an AlGaN / GaN superlattice structure whose sheet resistance is lower than the sheet resistance of the n-type GnA layer. The LRL reduces current crowding by conducting current laterally under the n-type GaN layer. The LRL reduces defect density by preventing dislocation threads in the underlying GaN template from extending up into the PAN structure.