31 results about "Current crowding" patented technology

The invention relates to the technical field of vertical cavity surface emitting lasers. The invention provides a buried tunnel junction type 940nm vertical cavity surface emitting laser and a preparation method thereof, and aims to solve the problem that a traditional oxidation limiting type vertical cavity surface emitting laser has limitation, most heat flow cannot smoothly pass through an oxidation limiting layer due to obstruction of the oxidation limiting layer and can only flow to a laser emitting area of an active area from an oxidation hole to cause heat accumulation. The buried tunnel junction can effectively realize the limiting function of an electric field and a light field and replace the function of an oxidation limiting layer in the vertical cavity surface emitting laser, meanwhile, the buried tunnel junction is high in heat conductivity, the heat flow transmission efficiency can be remarkably improved, heat accumulation of an active area is remarkably relieved, and the situation that heat flow transmission is blocked is avoided; formation of the buried tunnel junction does not introduce stress, the current crowding effect is small, the heat conductivity is high, heat flow transfer is not hindered, and therefore the influence of the self-heating effect on the electro-optical performance and the thermal performance of the laser is reduced.

According to the method for regulating and controlling the current density of the superconducting micron wire, the hole shape with a certain size is designed in the linear area of the winding superconducting micron wire, so that the current density of the superconducting micron wire is redistributed, the current density at the corner of the winding superconducting micron wire is reduced, and the current crowding effect of the superconducting micron wire is effectively relieved. According to the current density regulation and control method, the superconducting micron wire is allowed to work under higher overall bias current without causing too high dark counting, so that the photon counting rate upper limit of the detector is improved. According to the invention, the detection efficiency of the superconducting micron wire can be improved, dark counting and time jitter are reduced, the structure is simple, the current density is flexible to regulate and control, meanwhile, the device is easy to expand to the development of a large photosensitive area detector, and the device has a wide application prospect in the fields of quantum communication, bioluminescence imaging, dark substance detection and the like.

The invention provides an LED epitaxial structure and a manufacturing method thereof, an LED chip and a light-emitting device. The LED epitaxial structure comprises an epitaxial laminated layer positioned on the surface of one side of the substrate; the epitaxial laminated layer comprises an N-type limiting layer, an N-surface waveguide layer, an active layer, a P-surface waveguide layer and a P-type limiting layer; the P-plane waveguide layer comprises a first waveguide layer, a second waveguide layer and a third waveguide layer which are sequentially arranged in the direction away from the active layer; the first waveguide layer comprises AlGalnP, and the Al component of the AlGalnP in the first waveguide layer is gradually increased from a first preset value to a second preset value along the direction deviating from the active layer; the second waveguide layer comprises AlGalnP, and the Al component of the AlGalnP in the second waveguide layer is a second preset value; the third waveguide layer comprises AlGalnP, and the Al component of the AlGalnP in the third waveguide layer is gradually reduced from the second preset value to a third preset value in the direction away from the active layer. The LED epitaxial structure is helpful for improving the distribution uniformity of current carriers, reducing the current crowding phenomenon and inhibiting the leakage of electrons, thereby improving the stability and luminous efficiency of the LED epitaxial structure.

The invention discloses a three-dimensional micro-interconnection structure based on vertically arranged metal nanorods and a preparation method thereof, and belongs to the field of semiconductor packaging. The structure sequentially comprises a bottom chip bonding pad, a UBM layer, a Ti / Ni transition layer, a vertical nano column array and a top packaging connection layer from bottom to top. Through a micro-nano processing technology, hundreds to thousands of nanowires are integrated in a single bump, so that the order of magnitude of interconnection points is fundamentally improved. As a whole, the nanorod array can absorb huge thermal stress through slight elastic bending and plastic deformation, and fatigue fracture is avoided. The huge total side wall area provides a wide interface for IMC formation and mechanical anchoring, and the bonding is firm. The current enters a huge nanopillar array side wall area from the UBM, the current crowding effect at the bottom of a traditional bump is avoided, and the electromigration life is remarkably prolonged. The metal nanorods with high thermal conductivity provide numerous parallel heat flow channels in the Z direction, and the thermal resistance is remarkably reduced.

The invention discloses a superconducting nanowire detector and a superconducting nanowire time-resolved single-photon spectrometer. The superconducting nanowire detector comprises a light response unit adopting a 1 * N discrete linear array structure, adjacent single detection units are spaced through delay lines, the delay lines on the two sides of the light response unit are connected with electrodes through gradient line units, and the gradient line units are arranged at the edge of the light response unit. Similar structure units which are in mirror symmetry with the gradual change line units are arranged on the two sides of the gradual change line units. The spectrometer comprises a displacement table, an optical fiber, an optical fiber focus lens, a diffraction grating, a focusing lens, the superconducting nanowire detector and a reading circuit. According to the detector, the current crowding effect can be avoided, the improvement of critical current and the reduction of dark count are realized, and the formation of an ultra-large-area superconducting nanowire linear array layout is facilitated. The spectrograph calibrates a spectrum through position mapping, wavelength information of incident light can be obtained only by measuring time difference, and the time resolution capability is achieved.

A planar magnetic-electrical power train suitable for large voltage step down and high current application is formed by a number of branches, wherein each branch is formed by a plurality of power processing cells wherein the high output current is extracted uniformly with minimum losses. The planar magnetic-electrical power train is inherently flexible to accommodate diverse form factors. The effective turns ratio is set by the number of turns or layers allocated to the primary and the cell count. The use of an optimized U core allows a simple implementation of fractional turns and the flexibility to tailor the power capability and the desired turns ratio. Output current is drawn in parallel from all cells, permitting distributed placement of output capacitors on each cell and thereby reducing conduction losses and current crowding.

An electrical contact for a semiconductor device, and a method of forming an electrical contact is disclosed. The electrical contact comprises a perimeter area, an aperture located within the perimeter area and two or more electrical tracks extending from the perimeter area to a free end within the aperture. The two or more electrical tracks comprise a non-linear shape. The presence of the two or more electrical tracks within the aperture provides a means to remove, or significantly reduce, the problematic effects of current crowding within a semiconductor device in which it is employed. The electrical contacts provide particular application for semiconductor laser devices. When the electrical contact is located on an output surface of the semiconductor laser device, the condition for a diffraction pattern to be imparted onto the emission profile of the output light of the semiconductor laser device is removed, thus improving the overall beam quality of the output light.

The invention provides an LED chip and a manufacturing method thereof, a stacking structure of the LED chip at least comprises a second type semiconductor layer, an active region and a first type semiconductor layer which are stacked in sequence, one side, deviating from the active region, of the first type semiconductor layer is a light emitting surface of the LED chip, and a first type current expansion layer is arranged in the first type semiconductor layer, a patterned lattice distortion structure is arranged in the first-type current expansion layer, the resistance value of the lattice distortion structure is larger than that of other areas of the first-type current expansion layer, the resistance values of the lattice distortion structure and the first-type current expansion layer are distributed in a periodic high-low mode, a current guiding path is formed through resistance difference, carriers are made to bypass transversely, and transverse expansion of current can be guided. Current crowding below the electrode is solved, the luminous efficiency of a non-electrode area can be improved under the condition that the area proportion of the electrode area is not increased, the luminous efficiency of the LED chip is improved, and the LED chip is simple and convenient in process manufacturing and convenient to produce.

The invention discloses a light-emitting diode capable of improving current expansion capability and antistatic capability and a preparation method of the light-emitting diode. A chip structure comprises a sapphire patterned substrate and an epitaxial layer on the sapphire patterned substrate from bottom to top, a current blocking dielectric layer; a transparent conductive layer; an electrode layer; a protective layer; the current blocking dielectric layer is located in an area right below the metal electrode and is in direct contact with the metal electrode layer; and current in the metal electrode region is prevented from being directly injected downwards into the epitaxial layer. According to the invention, the current blocking dielectric layer with a laminated structure is adopted, so that the current can be uniformly and transversely expanded after passing through the metal electrode, the current crowding effect and the local heat effect of the metal electrode area are further relieved, the light emitting uniformity of the whole core particle is improved, the light emitting efficiency of the diode is improved, and the droop effect is relieved. The current blocking dielectric layer has an excellent insulation characteristic, plays a role in enhancing current expansion, well improves the antistatic capability of the diode, particularly reduces the probability that the diode is broken down in a metal electrode area, and improves the production yield of a chip.

The invention relates to the technical field of solder paste production, in particular to a solder paste formula capable of reducing solder joint holes and a preparation process. The solder paste formula capable of reducing solder joint holes comprises tin, silver, copper, rosin, a solvent, a trace additive element group package, a curing group package, a reduction group package, antimony, manganese, glutaric acid, benzotriazole and a surfactant. According to the process, stable electrical connection is provided by reducing welding spot cavities, and a larger and more continuous path is formed in a welding spot due to small cavity current, so that the phenomenon of current crowding is reduced, and local overheating and potential signal interruption risks are avoided; the welding spots are not only electrically connected, but also key heat conduction paths of power devices such as a CPU, a GPU and a power MOSFET, metal is a good heat conductor, the cavities are heat insulators, the welding spots with small cavities are lower in thermal resistance, heat generated by a chip can be more efficiently transmitted to a PCB and dissipated, the junction temperature of the chip can be directly reduced, and the small cavities are used for preventing the devices from being overheated, so that the reliability of the device is improved. And the long-term reliability is ensured.

A thin-film resistor (TFR) includes conductive line(s) and a resistive layer over the conductive line(s). The TFR also includes at least one viabar structure coupled to the resistive layer and including a first viabar portion electrically connected to the resistive layer at an edge thereof and a second viabar portion electrically connected to the conductive line(s). In other cases, a viabar structures partially land over the resistive layer and are electrically connected to an edge of the resistive layer and partially land on the conductive line(s). Among other advantages, the viabar structure reduces current crowding from tight contact spacing, and allows alternative routing of interconnects to the TFR.

The application provides a high-power vertical structure LED chip structure and a preparation method of a current blocking layer of the LED chip structure. The LED chip comprises, from bottom to top, a conductive substrate, a metal bonding layer, a first electrode, a first semiconductor layer, an active layer, a second semiconductor layer, a current blocking layer and a second electrode. The complementary layer corresponds to the position of the current blocking layer. The current blocking layer is formed on the surface of the second semiconductor layer. The second electrode is formed on the surface of the current blocking layer. The second electrode comprises a pad, a transmission electrode and a transmission injection electrode. The width of the pad and the transmission electrode is smaller than the width of the current blocking layer below the pad and the transmission electrode. The width of the transmission injection electrode is larger than the width of the current blocking layer below the transmission injection electrode. Through the design of the width of the second electrode and the current blocking layer, the current crowding below the electrode is reduced, the current expansion uniformity of the high-power LED is improved, and the brightness of the chip under a large current is improved.

The present disclosure provides a light-emitting diode with improved current crowding and a preparation method thereof, and belongs to the technical field of optoelectronic manufacturing. The light-emitting diode comprises an epitaxial layer and a finger electrode, the finger electrode is located on the surface of the epitaxial layer, at least part of the area of the orthogonal projection of the finger electrode on the surface of the epitaxial layer is a curved structure, and the radius of curvature of the curved structure is greater than or equal to 30 μm. The present disclosure can improve the problem of uneven current density distribution, prevent the occurrence of current crowding effect, and improve the reliability of the light-emitting diode.

The invention relates to the technical field of semiconductors, in particular to a Schottky and ohmic mixed drain enhanced GaN high electron mobility transistor, which comprises a metal source, a metal gate, a P-GaN region, a first Schottky drain, an ohmic drain, a second Schottky drain, an AlGaN barrier layer, a GaN channel layer, an AlGaN buffer layer, an AlN nucleating layer and a substrate layer. The first Schottky drain electrode contact metal has the effect similar to a field plate, channel modulation and electric field modulation of the second Schottky drain electrode contact etched to the GaN channel layer can effectively optimize electric field distribution of a drain end, and withstand voltage of the device is improved; meanwhile, the current can be more effectively guided to flow to the whole ohmic region under the action of improving electric field distribution through contact of the first Schottky drain electrode and the second Schottky drain electrode, so that electron injection is more sufficient, the effective channel width is increased, current crowding can be remarkably improved, the on-resistance is reduced, the output current is improved, and the reliability of the device is improved. And the problem of compromise contradiction between the on resistance and the withstand voltage of the device is solved.

A light-emitting diode includes an N-type semiconductor layer, a light-emitting layer, a first P-type semiconductor layer, a hole diffusion layer and a second P-type semiconductor layer sequentially stacked in that order. The hole diffusion layer includes a first sub-layer, a second sub-layer and a third sub-layer sequentially stacked along a direction from the first P-type semiconductor layer to the second P-type semiconductor layer. The first sub-layer is an AlN layer, the second sub-layer is an AlInGaN layer or an AlGaN layer, and the third sub-layer is an AlInGaN layer or an AlGaN layer. As a result, advantages of alleviating a current crowding problem and improving luminous efficiency can be achieved.

The utility model discloses a kind of electrochromic devices of uniform color change, including first substrate layer, first conductive layer, electrochromic film layer, second conductive layer and second substrate layer from top to bottom sequentially superposed, the edge of the upside of second conductive layer is spaced apart and provided with a plurality of first grooves, the edge of the downside of first conductive layer is spaced apart and provided with a plurality of second grooves, first groove and second groove are overlapped and arranged along the edge of electrochromic device, in electrochromic device, there is at least one corner, first groove is opened in its upside with the first groove of angle, or, second groove is opened in its downside with the second groove of angle. The conductive electrode of the two side edges of at least one corner of the electrochromic device is same polarity electrode, can make the color change speed of electrochromic device slow down in the corner, offset the premature coloration caused by "current crowding" of traditional device, to reach the color change speed and color change effect of more uniform of electrochromic device whole, and facilitate the setting of conductive electrode.

A thin-film resistor (TFR) includes conductive line(s) and a resistive layer over the conductive line(s). The TFR also includes at least one viabar structure coupled to the resistive layer and including a first viabar portion electrically connected to the resistive layer at an edge thereof and a second viabar portion electrically connected to the conductive line(s). In other cases, a viabar structures partially land over the resistive layer and are electrically connected to an edge of the resistive layer and partially land on the conductive line(s). Among other advantages, the viabar structure reduces current crowding from tight contact spacing, and allows alternative routing of interconnects to the TFR.

The application provides an LED chip and a manufacturing method thereof, wherein the LED chip comprises a metal bonding layer, a metal reflection structure, a transparent dielectric structure and a stack structure, the metal reflection structure and the transparent dielectric structure form an ODR reflection structure, the ODR reflection structure is used for reflecting light emitted by an active region and blocking migration of a metal material to the active region, the metal reflection structure is a multilayer composite reflection structure, and the reflection rate can be effectively improved, the transparent dielectric structure comprises a dielectric layer or an insulating dielectric layer, the insulating dielectric layer has a plurality of through holes penetrating through the insulating dielectric layer, each through hole is filled with a metal material to form a plurality of conductive channels, current can be uniformly distributed through the dielectric layer or the plurality of conductive channels, and the problems of current crowding and poor reliability of the LED chip under a large-current working condition can be avoided, and the light emitting surface is a roughened surface, so that the light emitting angle of the LED chip is enlarged and the light emitting efficiency of the LED chip is improved.

The various embodiments described herein include methods, devices, and circuits for reducing or minimizing current crowding effects in manufactured superconductors. In some embodiments, a superconducting circuit includes: (i) a first component; (ii) a second component; (iii) a third component; and (iv) a superconducting connector electrically connecting the first component, the second component, and the third component, the connector including a first section that splits at a splitting end into a second section and a third section. The first section connecting to the first component at a first end and widening in accordance with an electrical current streamline prior to the splitting end.

The invention discloses an anti-emitter crowding effect optimization method for a wide-working-interval photo-transistor, which comprises the following steps of: forming non-uniform emitter metal contact on the upper surface of an emitter region of the transistor through non-uniform contact window distribution, and arranging a plurality of independent emitter units to form a multi-emitter structure so as to increase the total contact area; the emitter units follow the non-uniform design principle, the unit number density of the center area of the emitter region is higher than that of the edge area, and the area of a single unit can be adjusted according to the current crowding degree, so that the current density of the center area of the emitter contact is higher than that of the edge area. And the number of current injection channels in the central region and the single-channel bearing capacity are doubly improved, so that the bias voltage non-uniformity of the emitter junction caused by the resistance of the base region is compensated. According to the invention, the current distribution uniformity of the photo-transistor under a large-current working condition can be obviously improved, the linear working interval and the dynamic range of the photo-transistor are effectively widened, the maximum output current capability and the reliability are improved, and the current gain does not need to be sacrificed.

The invention relates to a thin film resistor with a via strip structure. A thin film resistor (TFR) includes a wire and a resistive layer over the wire. The TFR further includes at least one via strip structure coupled to the resistive layer and including a first via strip portion electrically connected to the resistive layer at a first edge of the resistive layer and a second via strip portion electrically connected to the conductive line. In other cases, the via strip structure falls partially over and electrically connected to an edge of the resistive layer and partially on the conductive line. Among other advantages, the via strip structure reduces current crowding due to close contact pitch and allows for alternative routing of interconnects to the TFR.

The application discloses a light-emitting device and a preparation method thereof. The light-emitting device comprises an epitaxial wafer, a passivation layer, a current spreading layer and an electrode, wherein the epitaxial wafer is provided with a light-emitting unit and a step beside the light-emitting unit and etched to an N-type semiconductor layer, the step has an upwardly inclined sidewall; the passivation layer is on the step; the current spreading layer is above a device mesa and all or part of a second surface; and the electrode comprises a gate line electrode, a first electrode and a second electrode. The device mesa area of the application only has the gate line electrode, and the first electrode does not form a light shielding for the device, which greatly improves the light-emitting efficiency of the device; the width and length of the gate line electrode and the size of the first electrode can be reduced or enlarged in equal proportion, which is beneficial to the research on the material characteristics and can significantly relieve the current crowding effect.

The invention relates to the technical field of industrial visual inspection, in particular to a metallized film defect detection method and device, computer equipment and a program product. The metalized film defect detection method comprises the following steps: acquiring a transmitted light image of a metalized film to be detected; obtaining a sheet resistance distribution field of the metallized film through a photoelectric mapping relation according to light intensity distribution in the transmitted light image; virtual voltage is applied, the square resistance distribution field serves as a coefficient field, and a steady-state current continuity equation is solved to obtain a potential distribution field; a power density field is calculated according to the potential gradient of the potential distribution field and the square resistance distribution field, and the power density field represents the energy concentration degree caused by current crowding; and identifying defects in the metallized film based on the power density field and the transmitted light image. The accuracy of detecting the defects of the metallized film can be improved.

The sampling resistor porous diverter comprises a manganese-copper plate body and red copper plate bodies on the two sides, the two sides of the manganese-copper plate body in the width direction are welded to the red copper plate bodies respectively, sampling points and a plurality of connecting holes are formed in the red copper plate bodies respectively, and the connecting holes are located in the edge positions of the sides, away from the manganese-copper plate body, of the red copper plate bodies; the connecting line between the midpoints of the two sides of the end face of the red copper plate body in the length direction is a center line, the sampling points of the red copper plate body are located in the area between the connecting hole and the welding seam formed by the red copper plate body and the manganese-copper plate body, and the two sampling points are distributed in an axial symmetry mode. The periphery of the sampling point of the red copper plate body is provided with an equal potential difference notch. The current field of the sampling resistor porous diverter is homogenized, sampling points are arranged in a mirror image mode with the center line of a plate body as the axis, no matter which side and which connecting holes are connected with loads, current vectors flowing into a manganese-copper area are always symmetrical about the center line, and additional voltage drop caused by single-side current crowding is eliminated.

The application provides an LED chip and a preparation method thereof. A first current blocking layer and a current spreading layer are sequentially formed on a mesa of an epitaxial stack, and a P-type electrode comprises an interconnected P-type connecting part and a P-type spreading part. The P-type connecting part is laminated on a surface of the first current blocking layer and connected with the P-type semiconductor layer by embedding the first current blocking layer through a through hole. The P-type spreading part extends to the edge of the mesa from the periphery of the P-type connecting part by being laminated on the surface of the current spreading layer. In this way, the current crowding phenomenon caused by a large driving current is solved, and the external quantum efficiency of the LED is effectively improved. Meanwhile, the P-type connecting part is laminated on the surface of the first current blocking layer and connected with the P-type semiconductor layer by embedding the first current blocking layer through a through hole, so that the falling-off problem of the electrode is effectively solved, and the reliability of the LED chip is improved.

The invention discloses a high-electron-mobility gallium oxide-based ring gate fin type transistor and a manufacturing method thereof, and mainly solves the problems of low channel mobility, high on-resistance and current crowding effect of the existing similar devices. The invention relates to a semiconductor device, which comprises a substrate (1), a barrier layer (2), a channel layer (3), source and drain electrodes (4 and 5) in an outer ring and a central region of the channel layer, a gate dielectric layer (6) between the source and drain electrodes, and an annular gate electrode (8) above part of the gate dielectric layer, and a plurality of grooves (9) which are uniformly arranged along the radial direction penetrate through the channel layer between the source and drain electrodes and part of the barrier layer. The channel layer between adjacent grooves forms a Fin channel (10), and a magnetic thin film layer (7) is arranged on a part of the gate dielectric layer corresponding to the grooves. According to the invention, an annular magnetic field can be provided for the channel through the magnetic thin film layer, and a Lorentz force from bottom to top is applied to moving electrons, so that the channel electrons perform directional movement under the synergistic effect of the Lorentz force and an electric field force, the on-resistance is reduced, the carrier mobility of the device is improved, and the device can be used as a power electronic device.

An antenna assembly may include a radome. The antenna assembly may include a printed circuit board (PCB) configured to be housed by the radome, wherein the PCB comprises a first side and a second side; a counter pose element formed on the first side of the PCB, wherein the counter pose element comprises one or more conductive elements, wherein lengths of the one or more conductive elements correspond to a band of operation for the antenna assembly. The antenna assembly may include a driven element formed on the second side of the PCB and comprising a slit that allows for current crowding of the driven element. The antenna assembly may include a feed element coupled to the PCB, wherein the feed element is configured to energize the driven element.

The application discloses a Micro-LED device for relieving current crowding effect and a preparation method thereof, and the epitaxial structure of the Micro-LED device comprises, in sequence from the back to the front, a substrate, a buffer layer, an n-GaN layer, a multi-quantum well layer and a p-GaN layer, and a light emitting mesa is formed by etching the front to the n-GaN layer; a current spreading layer is arranged on the p-GaN layer, a p-electrode is arranged on the current spreading layer, and an n-electrode is arranged on the n-GaN layer; wherein the front of the p-GaN layer is provided with a plurality of grooves below the current spreading layer, and the grooves are filled with a high-reflectivity metal conductive material, so that the uniform distribution of current in the whole device is obviously improved, the current spreading capacity of the device is improved, and the stability and reliability of the device can be obviously improved.