The invention relates to a gallium nitride based light emitting diode chip and a preparation method thereof, and relates to a semiconductor device provided with at least one electric potential jumping barrier or a surface potential barrier and specially suitable for light emission. The gallium nitride based light emitting diode chip is structurally characterized in that an epitaxial wafer of a conventionally grown LED epitaxy structure in the industry of gallium nitride based light emitting diode chips serves as a substrate, the substrate comprises a sapphire substrate, a GaN buffer layer, a Si doped n type GaN layer, an InGaN / GaN multiple quantum well active area and a Mg doped p type GaN layer from bottom to top, then 1-6 layers of SiO2 / TiO2 distributed Bragg reflection structure layers are alternately deposited, then a composite metal Al film forms a reflected current barrier layer, and an ITO transparent conducting layer in the industry of the gallium nitride based light emitting diode chips is assembled at last. According to the gallium nitride based light emitting diode chip and the preparation method, the current crowding effect on a p metal electrode in the prior art is eliminated, and the problem of LED chip luminous efficiency reduction due to the fact that the metal electrode absorbs photons is resolved.