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Semiconductor light emitting device and manufacturing method for the same

A technology of light-emitting devices and semiconductors, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of current congestion, no contribution to light output, low luminous efficiency of devices, etc., and achieve the effects of avoiding congestion, improving current expansion, and improving luminous efficiency

Active Publication Date: 2006-05-10
晶能光電股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as shown in the figure, since the semiconductor layer in the device is generally very thin, the current spreads in the lateral direction with a large resistance, and it is easy for the current to "crowd" under the N-type ohmic electrode.
At the same time, because the N-type electrode 2 is opaque, the light emission under the electrode is blocked, so a large part of the current does not contribute to the light output of the entire device, resulting in low overall luminous efficiency of the device.

Method used

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  • Semiconductor light emitting device and manufacturing method for the same
  • Semiconductor light emitting device and manufacturing method for the same
  • Semiconductor light emitting device and manufacturing method for the same

Examples

Experimental program
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Effect test

Embodiment 1

[0052] The semiconductor light emitting device of the present invention, such as figure 2 , image 3 As shown, it includes: a silicon substrate 9 with a main surface and a back surface, an adhesive metal layer 11 stacked on the main surface of the silicon substrate 9, a reflective / The ohmic metal layer 7 is a semiconductor stack stacked on the reflective / ohmic metal layer 7, and the semiconductor stack includes a P-type gallium nitride layer 6, an indium gallium nitride / gallium nitride layer from bottom to top Quantum well light-emitting layer 5 and an N-type gallium nitride layer 4 are stacked on the first ohmic electrode 8 on the N-type gallium nitride layer 4. The ohmic electrode is circular and has a diameter of 100 microns; it is stacked on the silicon The second ohmic electrode 12 on the back of the substrate 9, wherein the reflective / ohmic metal layer 7 has a circular vacancy 10 with a diameter of 100 microns, and the vacancy 10 is filled with a silicon dioxide insul...

Embodiment 2

[0055] The semiconductor light-emitting device of the present invention includes: a silicon substrate 9 having a main surface and a back surface, an adhesive metal layer 11 laminated on the main surface of the silicon substrate 9, and an adhesive metal layer 11 laminated on the adhesive metal layer 11. A reflective / ohmic metal layer 7, a P-type gallium nitride layer 6 stacked on the reflective / ohmic metal layer 7, an indium gallium nitride / gallium nitride multi-quantum layer stacked on the p-type gallium nitride 6 Well light-emitting layer 5, the N-type gallium nitride layer 4 stacked on the InGaN / GaN multi-quantum well light-emitting layer 5, the "meter" layer stacked on the N-type GaN layer 4 The font-shaped first ohmic electrode 8 is stacked on the second ohmic electrode 12 on the back of the conductive substrate 9 , wherein the P-type gallium nitride layer 6 has a "m"-shaped vacancy 10 . Wherein the area of ​​the "meter" font vacancy 10 is 1.5 times of the area of ​​the "m...

Embodiment 3

[0059] The semiconductor light emitting device of the present invention comprises: a silicon substrate 9 having a main surface and a back surface; an adhesive metal layer 11 laminated on the main surface of the silicon substrate 9; an adhesive metal layer 11 laminated on the adhesive metal layer 11 Reflective / ohmic metal layer 7 on top; P-type gallium nitride layer 6 stacked on said reflective / ohmic metal layer 7; Indium gallium nitride / nitride stacked on said P-type gallium nitride layer 6 Gallium light-emitting layer 5; the N-type gallium nitride layer 4 stacked on the light-emitting layer 5; the first ohmic electrode 8 stacked on the N-type gallium nitride layer 4, the shape of the electrode is as follows Figure 6 As shown in middle 8; the second ohmic electrode 12 stacked on the back side of the silicon substrate 9, wherein the P-type gallium nitride layer 4 and the light emitting layer 5 all have a vacancy 10, the shape of the vacancy is as follows Figure 6 Shown in 10....

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Abstract

This invention discloses one semiconductor light element and its process method, which The device has upper and down electrode structure through device light layer both sides two ohm electrodes relative space upper shape compensation or etching block light down part of semiconductor to reduce upper and down light parts current crowding situations.

Description

technical field [0001] The invention relates to semiconductor materials, in particular to a semiconductor light emitting device and a manufacturing method thereof. Background technique: [0002] Semiconductor light emitting devices have a wide range of applications. For example, semiconductor light-emitting diodes can be used to indicate the working status of instruments, traffic lights, large-screen displays, lighting and so on. Semiconductor light-emitting devices, according to the conductivity of the substrate used and the design of the epitaxial layer, have two structures: same-side electrodes and upper and lower electrodes. The light-emitting device with the upper and lower electrode structures has the advantages of simple packaging and high reliability. figure 1 It is a schematic cross-sectional structure diagram of a typical upper and lower electrode structure semiconductor light emitting device. 1 in the figure is a semiconductor stack, which sequentially includes...

Claims

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Application Information

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IPC IPC(8): H01L33/32H01L33/38
CPCH01L33/0093H01L33/145H01L33/38H01L2933/0016
Inventor 江风益王立方文卿
Owner 晶能光電股份有限公司
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