10 results about "Q factor" patented technology

The invention discloses a high-Q-factor MEMS (Micro Electro Mechanical System) beam resonator with a periodic ripple boundary, and belongs to the field of micro electro mechanical system resonator design. According to the structure, periodic corrugation modulation is introduced into the side wall of a traditional straight beam, a plurality of periodic corrugation units are symmetrically arranged on the boundary of the side wall of a beam body, a corrugation boundary contour curve is defined by a parameterization function, the modulation amplitude and period are adjustable, the beam width is continuously and periodically changed in the length direction, and therefore thermoelastic damping and anchor point loss are reduced at the same time. The corrugated boundaries are integrally and symmetrically arranged and can be directly processed and formed by an SOI (Silicon On Insulator) process, the structure manufacturability is high, and additional assembly is not needed. Under the driving of electrostatic force, the resonator forms more uniform strain distribution and a limited heat flow channel in fundamental mode vibration, so that the energy leakage is obviously weakened, and the resonance quality factor is further improved. The structure is suitable for high-Q-factor demand scenes such as high-sensitivity MEMS sensors, low-noise oscillators and microfilters.

Provided in the present invention is a method for accurately solving for wideband Q-factor and C-value curves of a capacitor, the method comprising frequency segmentation, low-frequency band and high-frequency band processing, transition region setting, curve splicing and smoothing processing. The specific steps comprise: dividing a frequency range into a low-frequency band of 0-5 GHz and a high-frequency band of above 5 GHz; in the low-frequency band, using an equivalent circuit model method to calculate a Q factor and a C value within the frequency range of 0-5 GHz; in the high-frequency band, using an S parameter fitting method to calculate a Q factor and a C value; setting a transition region at 4-6 GHz; and splicing curves of the low-frequency band and the high-frequency band and then performing smoothing processing on the curves in the transition region, so as to obtain final Q-factor and C-value curves. The present invention can accurately solve for the wideband Q-factor and C-value curves of the capacitor, thereby improving the accuracy and reliability of capacitor performance analysis.

The present application provides a kind of cantilever resonance frequency and quality factor measurement method and device, compared with the measurement method based on the PLL technology of existing phase-locked loop, can more comprehensively grasp sample magnetic property, and when responding to cantilever quality factor mutation, there is good measurement stability.The measurement method of the present application includes: cantilever driving step, wherein the driving signal of first frequency is used to drive the cantilever to vibrate, and then stop the driving signal;Free decay signal acquisition step, wherein in response to the stop of the driving signal, the free decay vibration signal of the free end of the cantilever is acquired;And data processing step, wherein the acquired free decay vibration signal is processed to obtain the resonance frequency and quality factor of the cantilever.

The invention discloses an interdigital transducer and an elastic wave resonator, and belongs to the technical field of surface acoustic waves. The interdigital transducer comprises an interdigital transduction electrode structure, the interdigital transduction electrode structure comprises a first interdigital electrode and a second interdigital electrode which are oppositely arranged in the first direction and form an aperture area, the finger edge of the first interdigital electrode forms a first curve, and the finger edge of the second interdigital electrode forms a second curve; the mass loads are formed on the interdigital transduction electrode structure and located in the aperture area, and the mass loads are arranged to form at least one third curve and at least one fourth curve; wherein the first curve, the second curve, the third curve and the fourth curve all meet a specific apodization function. According to the interdigital transduction electrode, apodization is carried out on the edge of a finger strip in the interdigital transduction electrode structure, an apodization mass load is arranged in an aperture area, and a specific apodization curve is adopted, so that propagation of a transverse mode is blocked, the transverse mode is inhibited, and meanwhile, quality factors are not reduced.

The invention discloses an ultra-high quality factor quasi-continuous domain bound state realization method, and relates to the field of micro-nano photonics resonators, and the method comprises the steps: designing a symmetric medium nano column, and exciting an internal Mie mode and a Fabry-Perot mode through adjusting the geometric parameters of the symmetric medium nano column; coupling of the two modes is accurately regulated and controlled, so that far-field radiation destructive interference is achieved, and a high-Q-value quasi-continuous domain bound state is formed under the condition of no symmetry breaking; the nano-columns are arranged into a periodic array, lattice constants are optimized, and the quality factor is improved to an ultrahigh level by using resonance coupling and collective interference effect between adjacent nano-columns. Symmetrical breaking is not needed, and higher structural robustness and preparation tolerance are achieved.

System, methods, and other embodiments described herein relate to a high-Q resonant state embedded system in a continuous body. In one embodiment, a system includes a longitudinally extending body that is subject to a flexural wave. The longitudinally extending body is attached to a fixed structure at a first end. The system also includes a mechanical resonator coupled to a surface of the longitudinally extending body along a length dimension of the longitudinally extending body. The mechanical resonator is located at a distance away from a second end of the longitudinally extending body to exhibit an infinite Q factor based on physical properties of the mechanical resonator.

The application relates to a method and device for determining the outgassing characteristics of internal materials of wafer-level vacuum packaged devices. The method comprises the following steps: obtaining a first quality factor and a first resonant frequency of a test sample at a standard temperature; adjusting the temperature in a temperature test chamber, and obtaining a second quality factor and a second resonant frequency of the test sample at each test temperature under the condition that the test sample is placed in the temperature test chamber; determining the frequency variation amplitude of the test sample at each test temperature according to the first resonant frequency and the second resonant frequencies; determining the quality factor variation amplitude of the test sample at each test temperature according to the first quality factor and the second quality factors; and determining the outgassing characteristics of the internal materials of the test sample according to the frequency variation amplitude and the quality factor variation amplitude of the test sample at each test temperature. The method can accurately obtain the outgassing characteristics of the internal materials of wafer-level vacuum packaged devices.

The present application belongs to the technical field of material property analysis, and particularly relates to a prefabricated component in-mold compactness monitoring method and system. The method comprises the following steps: applying an impact on an outer measuring point of a mold and collecting elastic wave time domain response signals of adjacent sensors to construct a self-correlation attenuation-Gaussian composite window truncated signal; performing Fourier transform on the truncated signal, generating a dimension-entropy weight composite spectrum after dividing frequency subbands, and locating an inherent frequency peak; calculating a quality factor of the inherent frequency peak, extracting harmonic frequency peak energy to form a multi-scale spectrum peak energy distribution vector, and calculating a Shannon entropy; matching a temperature-quality factor coupling model from a pre-set model library by using the Shannon entropy, and correcting the quality factor in combination with an in-mold environment temperature; inputting the inherent frequency peak, the temperature-compensated quality factor and the energy distribution vector into a nonlinear mapping model, and outputting the in-mold compactness of the prefabricated component. The present application realizes high-precision and reliable quantitative evaluation of the in-mold compactness of the prefabricated component.

The invention discloses a terahertz metasurface based on a symmetric broken structure, a device and application, and belongs to the technical field of terahertz metasurfaces. The invention provides a terahertz metasurface based on a symmetric broken structure. The terahertz metasurface comprises a substrate and a metal structure layer arranged on the substrate. The metal structure layer comprises a plurality of sensing units, and each sensing unit is composed of a plurality of same structure units which are periodically arranged; each structural unit comprises a pair of oppositely arranged rectangular metal opening wireframes, and the opening sizes of the rectangular metal opening wireframes of the structural units are different; in different sensing units, the arrangement periods P of the structural units are different from one another so as to excite bound state resonance in the symmetrical protection type quasi-continuous domain at different frequency points. According to the terahertz metasurface, high-quality factor resonance of multiple frequency points is excited by introducing the symmetrical breaking structure, so that the sensitivity and broadband detection capability of the terahertz metasurface are improved, and wide-spectrum high-resolution detection is realized.

Aspects include using a vibration transducer having a plurality of oscillators including a first oscillator (220) and a second oscillator (210), where the first oscillator and the second oscillator are coupled such that in a viscoelastic fluid (240), excitation (vibration) of the first oscillator excites the second oscillator (causing the second oscillator to vibrate). The frequency response of the double-oscillator combination is influenced by the fluid characteristics; thus measuring one or more of: i) resonant frequency, ii) vibration amplitude, iii) loss factor (or Q factor) of a vibration combination of the first oscillator and the second oscillator in the viscoelastic fluid may be used to determine one or more of: i) density, ii) viscosity (such as dynamic viscosity), iii) elasticity (such as storage modulus) of the viscoelastic fluid.