19 results about "Q factor" patented technology

A method of determining beta radiation intensity based on calculated resonance frequency and calculated quality factor can include providing an electrical sensor comprising at least one prong, irradiating the first composite material of the one of the plurality of planar surfaces and the material of the second section with beta radiation from a beta radiation source; measuring at least one impedance value from the electrical sensor with an impedance analyzer; calculating at least one resonance frequency value based on the measured at least one impedance value; calculating at least one quality factor value based on the calculated at least one resonance frequency value; and determining the beta radiation intensity based on the calculated at least one resonance frequency value and the calculated at least one quality factor value.

The invention belongs to the technical field of material characteristic analysis, and particularly relates to a prefabricated part in-mold compactness monitoring method and system. The method comprises the following steps: applying impact to a measuring point outside a mold, collecting elastic wave time domain response signals of adjacent sensors, and constructing self-correlation attenuation-Gaussian composite window cut-off signals; fourier transform is carried out on the truncated signal, a dimension-entropy weight composite spectrum is generated after frequency sub-bands are divided, and an inherent frequency peak is positioned; calculating a quality factor of the inherent frequency peak, extracting harmonic frequency peak energy to form a multi-scale spectrum peak energy distribution vector, and calculating Shannon entropy; matching a temperature-quality factor coupling model from a preset model library by using Shannon entropy, and correcting a quality factor in combination with an in-mold environment temperature; and inputting the inherent frequency peak, the temperature compensation quality factor and the energy distribution vector into a nonlinear mapping model, and outputting the in-mold compactness of the prefabricated part. According to the method, high-precision and reliable quantitative evaluation of the in-mold compactness of the prefabricated part is realized.

The metasurface resonator comprises a plurality of unit structures arranged periodically, each unit structure comprises a substrate layer and an L-shaped metal column, the L-shaped metal column is arranged at the center of the upper surface of the substrate layer, and the L-shaped metal column is arranged at the center of the upper surface of the substrate layer. The L-shaped metal column is composed of two cuboid metal columns which are perpendicular to each other, and the heights of the two cuboid metal columns which are perpendicular to each other are adjusted through a height scaling factor. By adjusting the height scaling factor of the metasurface resonator, the dissipation characteristic of the resonance mode supported by the metasurface resonator can be controlled, when the height scaling factor is reduced, the local state of the high-loss and low-quality factor supported in the metasurface resonator is evolved into the non-local state of the low-loss and high-quality factor, and the local state of the high-loss and low-quality factor is changed into the non-local state of the low-loss and high-quality factor. And non-local plasmon resonance with smaller radiation loss, narrower line width and higher quality factor is excited. By using the non-local plasmon resonance of the high-quality factor, the GH displacement can be greatly enhanced.

The invention discloses a high-Q-factor MEMS (Micro Electro Mechanical System) beam resonator with a periodic ripple boundary, and belongs to the field of micro electro mechanical system resonator design. According to the structure, periodic corrugation modulation is introduced into the side wall of a traditional straight beam, a plurality of periodic corrugation units are symmetrically arranged on the boundary of the side wall of a beam body, a corrugation boundary contour curve is defined by a parameterization function, the modulation amplitude and period are adjustable, the beam width is continuously and periodically changed in the length direction, and therefore thermoelastic damping and anchor point loss are reduced at the same time. The corrugated boundaries are integrally and symmetrically arranged and can be directly processed and formed by an SOI (Silicon On Insulator) process, the structure manufacturability is high, and additional assembly is not needed. Under the driving of electrostatic force, the resonator forms more uniform strain distribution and a limited heat flow channel in fundamental mode vibration, so that the energy leakage is obviously weakened, and the resonance quality factor is further improved. The structure is suitable for high-Q-factor demand scenes such as high-sensitivity MEMS sensors, low-noise oscillators and microfilters.

Provided in the present invention is a method for accurately solving for wideband Q-factor and C-value curves of a capacitor, the method comprising frequency segmentation, low-frequency band and high-frequency band processing, transition region setting, curve splicing and smoothing processing. The specific steps comprise: dividing a frequency range into a low-frequency band of 0-5 GHz and a high-frequency band of above 5 GHz; in the low-frequency band, using an equivalent circuit model method to calculate a Q factor and a C value within the frequency range of 0-5 GHz; in the high-frequency band, using an S parameter fitting method to calculate a Q factor and a C value; setting a transition region at 4-6 GHz; and splicing curves of the low-frequency band and the high-frequency band and then performing smoothing processing on the curves in the transition region, so as to obtain final Q-factor and C-value curves. The present invention can accurately solve for the wideband Q-factor and C-value curves of the capacitor, thereby improving the accuracy and reliability of capacitor performance analysis.

The invention discloses a method for calculating the mode purity of a high-quality factor TM010 over-mode cylindrical resonant cavity, and belongs to the field of electromagnetic field propagation. According to the method, structural details of a coupling hole, an end cover step and a fit clearance are covered in modeling; all possible competition modes are covered through functional region decomposition and electromagnetic field mode decomposition in combination with a mode excitation rule of an over-mode cavity; introducing power normalization processing, and establishing a unified amplitude comparison reference; based on the synergistic effect of scattering matrix cascading and electromagnetic field mode decomposition, the transmission, reflection and coupling processes of multiple modes in the cavity are completely described; according to the invention, the problems that only the mode purity of the port plane and the electromagnetic field distribution in the volume can be obtained and the mode purity of a specific mode in the volume of the resonant cavity cannot be accurately calculated in the prior art are solved; the method is applied to the core technologies of microwave communication, satellite load, particle acceleration, precision measurement and the like depending on high-quality factor resonant cavities to accurately calculate the TM010 mode purity in the volume of the resonant cavity.

The present application provides a kind of cantilever resonance frequency and quality factor measurement method and device, compared with the measurement method based on the PLL technology of existing phase-locked loop, can more comprehensively grasp sample magnetic property, and when responding to cantilever quality factor mutation, there is good measurement stability.The measurement method of the present application includes: cantilever driving step, wherein the driving signal of first frequency is used to drive the cantilever to vibrate, and then stop the driving signal;Free decay signal acquisition step, wherein in response to the stop of the driving signal, the free decay vibration signal of the free end of the cantilever is acquired;And data processing step, wherein the acquired free decay vibration signal is processed to obtain the resonance frequency and quality factor of the cantilever.

This application discloses a vibration protection method for equipment. To achieve vibration protection of the target equipment, a first signal is acquired, the real-time rotational speed of the target equipment is determined using the first signal, and a filtering bandwidth is determined based on the real-time rotational speed and the quality factor of a filter. The second signal is then filtered using this filtering bandwidth to obtain a filtered signal, i.e., a third signal. This filtering method ensures that the fundamental frequency component is retained as much as possible while removing the harmonic components. Furthermore, the third signal is resampled to obtain a fourth signal, the spectral resolution of which is higher than that of the third signal. This resampling method ensures that the fundamental frequency energy leakage is minimized, thereby maximizing the retention of the fundamental frequency vibration value of the fourth signal after frequency domain processing. This reduces the risk of false alarms and malfunctions when vibration protection is performed based on this fundamental frequency vibration value.

The invention discloses an interdigital transducer and an elastic wave resonator, and belongs to the technical field of surface acoustic waves. The interdigital transducer comprises an interdigital transduction electrode structure, the interdigital transduction electrode structure comprises a first interdigital electrode and a second interdigital electrode which are oppositely arranged in the first direction and form an aperture area, the finger edge of the first interdigital electrode forms a first curve, and the finger edge of the second interdigital electrode forms a second curve; the mass loads are formed on the interdigital transduction electrode structure and located in the aperture area, and the mass loads are arranged to form at least one third curve and at least one fourth curve; wherein the first curve, the second curve, the third curve and the fourth curve all meet a specific apodization function. According to the interdigital transduction electrode, apodization is carried out on the edge of a finger strip in the interdigital transduction electrode structure, an apodization mass load is arranged in an aperture area, and a specific apodization curve is adopted, so that propagation of a transverse mode is blocked, the transverse mode is inhibited, and meanwhile, quality factors are not reduced.

The present application belongs to the technical field of seismic exploration, and specifically discloses a low signal-to-noise ratio seismic data Q factor extraction method, an electronic device and a storage medium. The method of the present application first performs data preparation, classifies VSP seismic data into first-class quality data-third-class quality data, and performs preprocessing, calculates the first-class quality factor, the second-class quality factor, and the third-class quality factor, then extracts the Q factor of the first-class quality factor, and then performs model training on the obtained Q factor to obtain a fitting formula, substitutes the longitudinal wave layer velocity of the second-class quality factor into the fitting formula to obtain a fitted Q factor, and substitutes the smoothed acoustic wave velocity of the third-class quality factor into the fitting formula to obtain the Q factor of the third-class quality factor. The present application is used for extracting the Q factor, and can improve the accuracy of the extracted Q factor.

The invention discloses an ultra-high quality factor quasi-continuous domain bound state realization method, and relates to the field of micro-nano photonics resonators, and the method comprises the steps: designing a symmetric medium nano column, and exciting an internal Mie mode and a Fabry-Perot mode through adjusting the geometric parameters of the symmetric medium nano column; coupling of the two modes is accurately regulated and controlled, so that far-field radiation destructive interference is achieved, and a high-Q-value quasi-continuous domain bound state is formed under the condition of no symmetry breaking; the nano-columns are arranged into a periodic array, lattice constants are optimized, and the quality factor is improved to an ultrahigh level by using resonance coupling and collective interference effect between adjacent nano-columns. Symmetrical breaking is not needed, and higher structural robustness and preparation tolerance are achieved.

The invention discloses a terahertz pure silicon equiphase low-loss waveguide based on a bound state in a continuous spectrum, and belongs to the technical field of terahertz on-chip communication. The waveguide comprises a conical gradual change input structure, a first straight waveguide, an equiphase waveguide, a second straight waveguide and a conical gradual change output structure which are sequentially connected along a transmission direction, the equiphase waveguide is of a one-dimensional photonic crystal structure formed by arranging a plurality of periodic unit structures, each unit is a cuboid made of a high-resistance silicon material, and symmetrical elliptic cylindrical grooves are formed in the upper surface and the lower surface of each unit. Energy band degeneracy of monopole and dipole modes is realized through points in a Brillouin region, a Dirac cone is formed, a near-zero effective refractive index is obtained at a central working frequency, and equiphase transmission is realized; and meanwhile, a bound state mechanism in a continuous spectrum is utilized to greatly improve quality factors and suppress radiation loss. The waveguide supports flexible adjustment of the working frequency through geometric dimension equal-proportion scaling, covers the frequency band of 0.1-10 THz, and can be designed to be of a bent structure. According to the invention, an all-silicon process is adopted, the structure is compact, the loss is low, and the device is suitable for high-fidelity signal transmission and processing in a terahertz integrated system.

The utility model relates to a terahertz metasurface frequency multiplier based on a continuous domain bound state, which comprises a plurality of structure units arranged periodically, and the composition of each structure unit is the same. The structural unit comprises a substrate and a silicon structure located on the substrate; a hollow cylinder is arranged in the silicon structure, and after disturbance is introduced, the hollow cylinder in the silicon structure shifts in the horizontal direction, so that the symmetry of the unit structure is broken. According to the utility model, the symmetrical protection type quasi-BIC resonance is excited by introducing the disturbance on the symmetry of the unit structure, and the harmonic enhancement is realized by using the nonlinear effect caused by the local field enhancement generated by the quasi-BIC resonance. According to the utility model, the problems of low resonance quality factor and complex structure in the existing metasurface resonator and terahertz frequency multiplier are solved.

The present application relates to the technical field of resonator, and discloses a resonator with super-high quality factor and insensitive to incident angle, which comprises a plurality of units arranged periodically, each unit is identical in structure and is composed of a dielectric column composed of dielectric AlGaAs.The present application solves the problems of high loss and complex structure in the high quality factor metal metamaterial resonator in the prior art, through the design of dispersion relation, the working wavelength is shifted extremely small under different incident angles, and the extremely high quality factor of the resonant peak can realize the great enhancement of nonlinear response.

System, methods, and other embodiments described herein relate to a high-Q resonant state embedded system in a continuous body. In one embodiment, a system includes a longitudinally extending body that is subject to a flexural wave. The longitudinally extending body is attached to a fixed structure at a first end. The system also includes a mechanical resonator coupled to a surface of the longitudinally extending body along a length dimension of the longitudinally extending body. The mechanical resonator is located at a distance away from a second end of the longitudinally extending body to exhibit an infinite Q factor based on physical properties of the mechanical resonator.

The application relates to a method and device for determining the outgassing characteristics of internal materials of wafer-level vacuum packaged devices. The method comprises the following steps: obtaining a first quality factor and a first resonant frequency of a test sample at a standard temperature; adjusting the temperature in a temperature test chamber, and obtaining a second quality factor and a second resonant frequency of the test sample at each test temperature under the condition that the test sample is placed in the temperature test chamber; determining the frequency variation amplitude of the test sample at each test temperature according to the first resonant frequency and the second resonant frequencies; determining the quality factor variation amplitude of the test sample at each test temperature according to the first quality factor and the second quality factors; and determining the outgassing characteristics of the internal materials of the test sample according to the frequency variation amplitude and the quality factor variation amplitude of the test sample at each test temperature. The method can accurately obtain the outgassing characteristics of the internal materials of wafer-level vacuum packaged devices.

The present application belongs to the technical field of material property analysis, and particularly relates to a prefabricated component in-mold compactness monitoring method and system. The method comprises the following steps: applying an impact on an outer measuring point of a mold and collecting elastic wave time domain response signals of adjacent sensors to construct a self-correlation attenuation-Gaussian composite window truncated signal; performing Fourier transform on the truncated signal, generating a dimension-entropy weight composite spectrum after dividing frequency subbands, and locating an inherent frequency peak; calculating a quality factor of the inherent frequency peak, extracting harmonic frequency peak energy to form a multi-scale spectrum peak energy distribution vector, and calculating a Shannon entropy; matching a temperature-quality factor coupling model from a pre-set model library by using the Shannon entropy, and correcting the quality factor in combination with an in-mold environment temperature; inputting the inherent frequency peak, the temperature-compensated quality factor and the energy distribution vector into a nonlinear mapping model, and outputting the in-mold compactness of the prefabricated component. The present application realizes high-precision and reliable quantitative evaluation of the in-mold compactness of the prefabricated component.

The invention discloses a terahertz metasurface based on a symmetric broken structure, a device and application, and belongs to the technical field of terahertz metasurfaces. The invention provides a terahertz metasurface based on a symmetric broken structure. The terahertz metasurface comprises a substrate and a metal structure layer arranged on the substrate. The metal structure layer comprises a plurality of sensing units, and each sensing unit is composed of a plurality of same structure units which are periodically arranged; each structural unit comprises a pair of oppositely arranged rectangular metal opening wireframes, and the opening sizes of the rectangular metal opening wireframes of the structural units are different; in different sensing units, the arrangement periods P of the structural units are different from one another so as to excite bound state resonance in the symmetrical protection type quasi-continuous domain at different frequency points. According to the terahertz metasurface, high-quality factor resonance of multiple frequency points is excited by introducing the symmetrical breaking structure, so that the sensitivity and broadband detection capability of the terahertz metasurface are improved, and wide-spectrum high-resolution detection is realized.

Aspects include using a vibration transducer having a plurality of oscillators including a first oscillator (220) and a second oscillator (210), where the first oscillator and the second oscillator are coupled such that in a viscoelastic fluid (240), excitation (vibration) of the first oscillator excites the second oscillator (causing the second oscillator to vibrate). The frequency response of the double-oscillator combination is influenced by the fluid characteristics; thus measuring one or more of: i) resonant frequency, ii) vibration amplitude, iii) loss factor (or Q factor) of a vibration combination of the first oscillator and the second oscillator in the viscoelastic fluid may be used to determine one or more of: i) density, ii) viscosity (such as dynamic viscosity), iii) elasticity (such as storage modulus) of the viscoelastic fluid.