7results about How to "High doping" patented technology

The invention discloses a preparation method of a loose body based on an optical fiber preform, and relates to the technical field of optical fiber processing. The method comprises the following steps: SS01, depositing a barrier layer by adopting an MCVD (modified chemical vapor deposition) process; sS02, multi-time deposition of a loose core layer is conducted through the MCVD deposition technology; sS03, preparing a doping solution containing rare earth ions and aluminum ions; sS04, off-line solution doping is carried out, and a vacuum pressurization alternate driving mode is adopted in the doping process. The porosity of the loose core layer is gradually reduced from inside to outside, a permeation resistance gradient is formed, the high porosity of the inner layer provides sufficient permeation channels, the low porosity of the outer layer plays a role of a barrier layer, rare earth ions are prevented from being adsorbed by the surface layer too early and exhausted in the doping process, and the rare earth ions are prevented from being adsorbed by the surface layer too early and exhausted through the forced permeation effect of vacuum pressurization alternate driving. Dissolved gas is discharged through vacuumizing operation after each stage of pressurization, space is vacated for next-stage permeation, and the rare earth ions are evenly distributed in the radial direction of the loose body.

This invention discloses a method for preparing functional carbon materials with atomically dispersed Lewis acid-base sites, comprising: (1) polymer preparation to obtain a polymer sample; (2) polymer modification to obtain a modified polymer sample; (3) polymer carbonization: the modified polymer sample is heat-treated in a non-oxidizing atmosphere to carbonize the modified polymer sample; after carbonization, the system is naturally cooled; then, after washing and drying, the target functional carbon material is obtained. This invention utilizes atomically dispersed Lewis acidic metal sites and basic N sites to modify carbon materials in situ. The prepared functional carbon material has a large specific surface area, well-developed pore structure, abundant acid-base sites, and an atomically distributed structure, which can significantly improve the density of functional sites on the surface of the carbon material and its adsorption efficiency for boron, phosphorus, and metal impurities. Its application in the purification of chlorosilanes can greatly reduce the load of subsequent distillation and impurity removal, and improve the yield and quality of high-purity chlorosilanes.

This application relates to the field of solar cell technology, providing an aluminum paste and its manufacturing method, a PERC cell, a module, and a system. The manufacturing method of the aluminum paste for PERC cells includes: preparing a boron-aluminum-silicon composite oxide; adding the boron-aluminum-silicon composite oxide to a glass base material to form a glass raw material; and using the glass raw material to prepare the aluminum paste. Thus, because the glass raw material of the aluminum paste includes the boron-aluminum-silicon composite oxide, boron can be better retained in the laser-drilled grooves, increasing the doping of the back electric field, thereby improving the back passivation effect of the PERC cell and contributing to improved photoelectric conversion efficiency.

This invention relates to the field of secondary battery technology, and discloses an inorganic superionic conductor material, its preparation method, and its applications. The inorganic superionic conductor material comprises apatite and dopant ions doped into the apatite; wherein the dopant ions include metal cations and non-metal anions. The inorganic superionic conductor material provided by this invention can be used as a modified filler to achieve synergistic effects on electrolyte mechanical and electrochemical performance. Simultaneously, it can be introduced as a modifier into iodine cathodes to activate the 4-electron reaction of the iodine cathode, and introduced into bromine cathodes to stabilize the redox reaction of bromine, reducing bromine loss, thereby significantly improving the capacity and cycle stability of the full battery. Furthermore, by using 3D printing technology, screen printing, digital light processing, and fused deposition modeling, the inorganic superionic conductor material can be assembled with interdigitated positive and negative electrodes into flexible batteries, exhibiting excellent application effects when integrated with flexible LEDs.

The invention relates to the technical field of organic solid waste recycling, in particular to adsorption cross-linking-reductive amination reinforced iron-nitrogen-doped high-catalytic-performance sludge biochar and a preparation method of the adsorption cross-linking-reductive amination reinforced iron-nitrogen-doped high-catalytic-performance sludge biochar. The preparation method comprises the following steps: performing pretreatment and preliminary pyrolysis on sludge to obtain sludge biochar; carrying out oxidation alkali washing on the sludge biochar to obtain hydrophilic biochar; mixing the hydrophilic biochar with polyethyleneimine and ferric salt for adsorption crosslinking, then adding a reducing agent in an inert atmosphere for reductive amination reaction, and then performing secondary pyrolysis in the inert atmosphere to obtain the sludge biochar with high catalytic performance. According to the invention, efficient utilization and atomic-scale close synergy of iron and nitrogen elements are realized, and a high-proportion FexN active site is formed in the biochar. When the prepared biochar activates peroxymonosulfate to degrade antibiotic wastewater, the biochar shows high catalytic activity and removal efficiency which are obviously superior to those of a traditional method, and a catalyst with excellent performance is provided for treating refractory organic wastewater by using waste to treat waste.

The application discloses a preparation method of a buried heterojunction for a distributed feedback laser, which can reduce the threshold current of a laser, greatly improve the consistency of a device and has strong process compatibility. The method introduces a selective Zn diffusion treatment process step after growing a buried layer on a top cladding layer. A high-concentration p-type region formed through the diffusion step can form a more ideal ohmic contact with a metal electrode. In addition, an extra thin gold layer with a thickness of 5-10 nm is evaporated on the top cladding layer, which can significantly reduce the ohmic contact. The ohmic contact is reduced from 1.2e ‑5 to 4.5e ‑7 , about 26.6 times. In addition, while reducing the ohmic contact, the current limiting effect is significantly enhanced. The threshold current of the laser prepared by the method can be reduced to 15-18 mA. In addition, the method has low process difficulty, high operability, high freedom and greatly improved device consistency. Moreover, the method has strong process compatibility. The method is suitable for popularization and application in the field of semiconductor lasers.

The invention discloses an aluminum nitride detector with a full-vertical structure and a preparation method of the aluminum nitride detector. The aluminum nitride detector comprises an aluminum nitride substrate, a first semiconductor and an anode metal laminated layer which are arranged on the upper surface of the substrate, and a second semiconductor and a cathode metal laminated layer which are arranged on the lower surface of the substrate, ohmic contact electrodes are formed on the surfaces of the first semiconductor and the second semiconductor respectively, and mesa terminals are formed on the surfaces, not covered by the ohmic contact electrodes, of the first semiconductor and the second semiconductor and the upper surface and the lower surface of the aluminum nitride substrate in an etching mode. After bias voltage is applied to the full-vertical MSM structure, full collection of energy of high-energy particles is realized; the aluminum-gallium-nitrogen interface layers are introduced to the front surface and the back surface of the aluminum nitride substrate at the same time to realize excellent ohmic contact, so that the sensitivity and the energy collection rate of the aluminum nitride high-energy particle detector are improved; and the mesa terminal is prepared by etching the groove in the area outside the active area, so that electric leakage is reduced, and the energy resolution of the aluminum nitride high-energy particle detector is further improved.