136 results about "Active nitrogen" patented technology

Front end of line (FEOL) plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

Structures to reduce dopant activation temperatures for ion implantation in III-N transistors, using low aluminum content layers in proximity to the conducting channel, are disclosed. A method to increase the temperature at which structures can be annealed by annealing in an active nitrogen ambient, for example, in NH₃ in a metalorganic chemical vapor deposition (MOCVD) chamber, is also disclosed.

The invention provides a method of forming a film stack on a substrate, comprising performing a silicon containing gas soak process to form a silicon containing layer over the substrate, reacting with the silicon containing layer to form a tungsten silicide layer on the substrate, depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer.

The invention provides a preparation method of nitrogen doped graphene and an application of the nitrogen doped graphene in super capacitors. The preparation method of the nitrogen doped graphene specifically comprises the following steps: putting a carbon material and a compound containing active nitrogen elements in an enclosed container, and heating to a temperature of 100 to 300 DEG C so as to obtain the nitrogen doped graphene. In the preparation process of the nitrogen doped graphene, under a heating condition, nitrogen elements in the compound containing active nitrogen elements are mixed into the carbon material so as to obtain the nitrogen doped graphene. The nitrogen doped graphene preparation method mentioned above avoids adopting a high reaction temperature, and has the advantages of mild preparation conditions and low production cost. The prepared nitrogen doped graphene is used as an electrode material of a super capacitor, and the specific capacity of the super capacitor can reach 190 F/g, when the electric current density is 5 A/g. The capacity retention ratio is 96.3% after 10000 times of circulation.

An underlying film forming section forming an underlying film on a semiconductor substrate is provided to an apparatus of fabricating a semiconductor device. The apparatus is further provided with a cooling section cooling the semiconductor substrate and a plasma nitriding section introducing active nitrogen into the underlying film while keeping the temperature of the semiconductor substrate cooled by the cooling section at 100° C. or below. The semiconductor substrate is cooled by using liquid nitrogen or liquid helium, and by cooling a stage on which the semiconductor substrate is placed.

This invention relates to an apparatus of catalytic molecule beam epitaxy (cat-MBE) and process for growing Group III nitride materials using thereof, characteristically in that said apparatus is equipped with a hot wire to catalytically decompose gaseous ammonium or nitrogen molecule into activated nitrogen radicals as the nitrogen source for growing epitaxial layers by MBE.

A liquid fertilizer is prepared from humic acid, active nitrogen, P2O5, potasium oxide, Zn, Mn, Cu, Fe, Mo, B and chitosan through preparing activated solution of humic acid, proportionally mixing with others and chelating. Its advantages are no deposit and no floc.

A nitrogen doped nano-class TiO2material with photocatalytic activity is prepared by doping N into TiO2 crystal. It features that its energy gap can be triggered by visual light, realizing the full-frequency absorption to visual light for increasing its light quantum efficiency.

The invention belongs to the technical field of fertilizer production, and specifically discloses an environment-friendly ecological full-nutrient fertilizer and a production method of the fertilizer. The environment-friendly ecological full-nutrient fertilizer comprises raw materials in parts by weight as follows: 10-50 parts of urea, 5-25 parts of ammonium sulfate, 10-40 parts of monoammonium phosphate, 10-40 parts of potassium chloride or potassium sulfate, 5-10 parts of plant straw ash, 1-10 parts of an active nitrogen source, 0.1-0.5 part of an active carbon source and 5-20 parts of a filler, wherein the active nitrogen source is single amino acid or compound amino acid, the active carbon source is a mixture of glucose and vitamin C in a weight ratio of 1: (0.5-4), and the plant straw ash is the straw ash of plants applying the fertilizer. The full-nutrient fertilizer has the characteristics of organic-inorganic combination and environmental protection, the output increase is obvious, and the utilization rate of the fertilizer is increased.

The invention relates to preparation and application of a peroxide nitroso (ONOO<->) fluorescent probe based on a hemicyanine dye. A structural formula of the fluorescent probe is shown in the attached figure. The invention provides a preparation method of the fluorescent probe which is synthesized by adopting IR-780, 3-nitrophenol, stannous chloride and the like as raw materials. The fluorescentprobe is characterized in that the fluorescent probe is a ratio peroxide nitroso fluorescent probe with near-infrared effect and high selectivity; firstly, the fluorescent probe has higher sensitivityon ONOO<->, and the specific value of fluorescence intensity (F460/F708) is enhanced by 153 times; then, the fluorescent probe has higher selectivity on ONOO<->, and is free from the interference byother active oxygen, active nitrogen, active sulfur and biological mercaptan; the fluorescent probe can quickly act with ONOO<->, and the response time is controlled within 80s; the fluorescent probehas been successfully applied into the study of cell imaging, and can be used for detecting the change of content of ONOO<-> in the cells.

The invention discloses a method and device for growth of nitride materials at low temperature through laser assistance. The method comprises the steps that precursor steam of a non-nitrogen element and active nitrogen precursor gas are conveyed to a substrate material at the temperature ranging from 250 DEG C to 800 DEG C in a reaction chamber; a laser beam with the wavelength equal to the length of active nitrogen molecular bond resonance waves is utilized for acting on active nitrogen gas to enable laser energy to be directly coupled to active nitrogen gas molecules; and breakage of NH keys is accelerated, sufficient active nitrogen is provided, the non-nitrogen element chemically react with the active nitrogen, the III group of nitrogen film coating materials are deposited, and sustained action is carried out until a sediment covers a whole substrate and reaches the needed thickness. The device comprises a vacuum reaction cavity, a gas pre-mixing cavity, a wavelength tunable laser device and a moving mechanism. On the basis of improvement in the active nitrogen utilization rate and reduction of the environmental pollution, large-area, rapid and high-quality growth of the nitrogen film coating materials under the low-temperature environment can be achieved.

The invention relates to preparation and application of a hydrogen peroxide (H2O2) near-infrared fluorescent probe. A structural formula of the probe is as shown in the specification. The invention provides a preparation method for synthesizing the fluorescent probe by using a benzopyranitrile-xanthene dye, potassium carbonate, 4-(bromomethyl)benzeneboronic acid pinacol ester and other raw materials. The fluorescent probe is a hydrogen peroxide fluorescent probe with near-infrared emission and large Stoke shift. Firstly, the probe shows high sensitivity to H2O2, and fluorescence intensity is increased by 24 times. Secondly, the fluorescent probe shows high selectivity to H2O2, and is not affected by other active oxygen, active nitrogen, various ions and biothiols. Moreover, the fluorescentprobe reacts quickly with H2O2, and a response time is within 30 min. In addition, the fluorescent probe is applied to detection of hydrogen peroxide content in living cells.

The invention discloses a method for preparing a high-nitrogen-content porous carbon material by utilizing biomass, a product and application thereof. The preparation process is as follows: pulverizing and drying the biomass, mixing the biomass and an activating agent uniformly, performing rapid pyrolysis on the mixture under the atmosphere of ammonia gas, and carrying out reaction between the activating agent and the biomass waste to etch a carbon skeleton to form a developed pore structure; meanwhile, a large amount of holes are formed, nitrogen atoms in the ammonia gas occupy the holes rapidly to form rich active nitrogen-containing functional groups (pyridine-N, pyrrole-N, quaternary-N and pyridine-N-oxide), so that a large amount of nitrogen elements are enriched in pyrolytic carbon;furthermore, the own action of the ammonia gas and the synergistic effect of the activating agent and the ammonia gas can promote formation of coke pores and nitrogen-containing functional groups, anda functional high-nitrogen-content porous carbon material with rich activated nitrogen-containing functional groups is finally formed and has wide application prospect in the fields of catalysts, adsorbents, electrode materials and the like, so that high-additional-value utilization of the biomass is realized.

The invention relates to a circular-heating rapid nitriding catalysis process which comprises the following steps: ammonia gas is injected to discharge air after workpiece is put into a nitriding furnace; the nitriding furnace is heated from room temperature to T1 temperature and T2 temperature with two sections of heat insulation; and then another two section of heating and heat insulation are carried out at T1temeprature and T2 temperature; the ammonia gas resolution ratio is controlled within the range of 18-60 percent, and the nitriding is carried out; a thickening process is carried out by fully utilizing the strong-nitriding high-speed step, the depth of a nitriding layer and the nitriding time according to a plurality of parabolas with different P values; white powders of nitriding catalysis agent containing chlorinated rare-earth elements are put into a steel tube along with the workpiece from the nitriding charge, wherein the nitriding catalysis agent comprises the following components according to percentages by weight of 3-10 percent of chlorinated rear-earth, 5-35 percent of ammonium chloride, 20-50 percent of calcium chloride and 20-55 percent of sodium carbonate; two ends of the steel tube are tightly bound by aluminum silicate fiber or rock wool and are then put into the furnace, and the nitriding catalysis agent can play a nitriding effect during the whole nitriding process. The invention improves the absorption capacity of the surface of the workpiece to active nitrogen atoms, accelerates the nitriding speed of the nitrogen atoms, shortens the nitriding insulation time by more than 44.4 percent, saves the electrical energy by more than 32 percent and shortens the production period by more than 32.7 percent.

The invention discloses a heat treatment nitridation technology for metal. The technology is characterized in that pre-oxidation is carried out before nitridation to form a uniform oxidation film on a metal surface. The technology comprises the following steps: 1) vacuumizing a furnace; 2) charging nitrogen and uniformly heating to 520-570 DEG C; and 3) charging oxygen in the nitrogen atmosphere. In the invention, pre-oxidation is carried out before nitridation so as to form an even active oxidation film on a metal surface layer. The active oxidation film on the metal surface is a core absorbed by initial active nitrogen atoms, so that active nitrogen can be absorbed on the metal surface more effectively to speed up nitridation. Therefore, after the active oxidation film is formed on the metal surface, the nitridation process development has high stability.

The invention belongs to the titanium dioxide photocatalysis chemical engineering technical field, in particular to a preparation method for preparing a titanium dioxide film with a visible light active nitrogen adulterate nanometer structure. The method takes titanium nitride nano powder as raw material, and firstly titanium nitride film is prepared through the electrophoretic deposition or the magnetron sputtering method; the heating processing is performed to the titanium nitride film, the temperature of the heating processing is controlled at 350 DEG C to 600 DEG C, the oxidating time needs 1 to 2 hours, when the color of the titanium nitride film changes, the visible light active nitrogen adulterate film TiO2 is formed. The method process of the invention is simple, safe, and environmental, and the poisonous NH3 using is avoided.

The invention discloses a method of using forestry and agricultural wastes to prepare long-chain fatty acid and nitrogen-doped carbon; the method comprises: mixing forestry and agricultural wastes with microalgae in a certain ratio, thermally decomposing an inert atmosphere to obtain a bio-oil product rich in high-added-value long-chain fatty acid; soaking thermally decomposed carbon in KOH solution to carry an activator, activating at high temperature to obtain nitrogen-doped carbon material having high specific surface area and rich active nitrogen-bearing functional groups. No catalysts are used herein to prepare the long-chain fatty acid, and the method has the advantages of greenness, good process simplicity, good operational convenience, and low cost; the prepared nitrogen-doped carbon material with excellent features is widely applicable to adsorbents, catalysts, electrode materials and other fields. The method provides high-value all-component utilization for biomass.

The invention relates to the field of the protection of securities, documents, and articles. A method of protection of documents, securities, or articles using quantum markers based on active nitrogen vacancy centers in nanocrystals of diamonds is proposed in the invention. The technical result is an increase in the reliability of the protection of the object of protection against falsification. The technical result is achieved by the fact that, in a method of protection of documents, securities, and articles that consists in the fact that the optical properties of NV centers of nanoparticles of diamond are used for protection against counterfeits, during the fabrication of the object of protection, nanoparticles of diamond measuring from 5 to 150 nm are introduced into it or into its constituent components. 1 dependent claim, 2 illustrations.

The invention discloses a preparation method of synthesizing multiple-active site nitrogen-doped graphene with laser irradiation. Through nano-second laser for irradiating a solution, a graphene oxide raw material with more edge active sites exposed can be produced, wherein the exposed edge active sites on the raw material can be regulated by means of laser energy and irradiation time, so that in the later period of hydrothermally synthesizing the nitrogen-doped graphene, more controllable pyridine nitrogen can be formed, thus improving catalytic activity of the nitrogen-doped graphene. In the invention, for the first time, a method of controllably increasing the content of pyridine nitrogen in the nitrogen-doped graphene is disclosed, wherein high-active nitrogen-doped graphene is synthesized in a water phase under a gentle environment. In addition, the preparation method is simple, is convenient to operate and is easy to control, is free of toxic reaction raw materials and is an environment-friendly green synthesis technology.

A method of preparing a precious metal nitride nanoparticle composition, includes the step of ionizing nitrogen in the gas phase to create an active nitrogen species as a plasma. An atomic metal species of the precious metal is provided in the gas phase. The active nitrogen species in the gas phase is contacted with the atomic metal species of the precious metal in the gas phase to form a precious metal nitride. The precious metal nitride is deposited on the support. Precious metal nanoparticle compositions are also disclosed.

The invention discloses a peroxynitrite ion detection probe as well as a preparation method and application thereof. The peroxynitrite ion detection probe comprises a fluorescent nano material and an enzyme, wherein the enzyme is combined with the fluorescent nano material, has an oxidation-reduction property and can be selectively oxidized by peroxynitrite ions to form an oxidized enzyme; after the fluorescent nano material is radiated by excited light, electrons in an excited state can be transferred to the oxidized enzyme and cannot turn back to a base state, and then fluorescent light of the fluorescent nano material can be quenched. As an inorganic light-emitting material is adopted as fluorophore, the peroxynitrite ion detection probe disclosed by the invention is intense in light emission, good in stability and less prone to photo-bleach; the surface of the probe is modified with the enzyme with oxidation-reduction property, and the enzyme can be selectively oxidized by ONOO<->, so that the probe is not interfered by other active oxygen (ROS) or active nitrogen (RNS), and is excellent in specificity.

A method for manufacturing a semiconductor device is disclosed which enables to suppress decrease in the mobility in a channel region by suppressing piercing of boron through a gate insulation film which boron is ion-implanted into a gate electrode. The method for manufacturing a semiconductor device includes: a step for forming a gate insulating layer on an active region of a semiconductor substrate; a step for introducing nitrogen through the front surface of the gate insulating layer using active nitrogen; and a step for conducting an annealing treatment in an NO gas atmosphere so that the nitrogen concentration distribution in the nitrogen-introduced gate insulating layer is high on the front surface side and low on the side of the interface with the semiconductor substrate.

The invention belongs to the technical field of analytical chemistry and particularly relates to a type of hypochlorous acid detection fluorescent probes and a preparation method and application thereof. The compounds have excellent selectivity of hypochlorous acid and are unresponsive to other common active oxygen/active nitrogen. The hypochlorous acid detection fluorescent probes are high in hypochlorous acid selectivity and sensitivity, and recognition with naked eyes instead of complicated instruments can be realized after response to hypochlorous acid; hypochlorous acid recognition in in-vivo level can be realized, and obvious color changes can be observed. The compounds can serve as the fluorescent probes to be applied to fields of hypochlorous acid detection, fluorescence imaging and the like.

The invention discloses a preparation method of a nitrogen-doped carbon catalyst and an application of the nitrogen-doped carbon catalyst in bio-oil hydrogenation. The preparation method of the nitrogen-doped carbon catalyst loaded with the active metal comprises the following steps: crushing and drying biomass waste, uniformly mixing the waste powder, an eco-friendly activating agent and urea, carrying out a pyrolysis activation nitrogen doping reaction process in an inert atmosphere to a nitrogen-doped carbon material with a developed pore structure and rich active functional groups under the synergistic effect of the biomass, the eco-friendly activating agent and the urea, and respectively capturing and anchoring active metals by utilizing developed pores and active nitrogen-containingfunctional groups of the nitrogen-doped carbon so that a stable coordination bond is formed and the highly-dispersed active metal-loaded nitrogen-doped carbon catalyst is obtained. The catalyst is applied to the catalytic hydrogenation conversion process of bio-oil derivatives, so that cyclohexanone with high selectivity can be obtained and the high-value nitrogen-doped carbon catalyst and high-efficiency and high-quality catalytic hydrogenation conversion of bio-oil can be simply and efficiently prepared from biomass.

A method for forming a group-III metal nitride material film attached to a substrate, the method including the procedures of subjecting the substrate to an ambient pressure of no greater than 0.01 Pa,and heating the substrate to a temperature of between approximately 500 DEG C-800 DEG C. The method further includes the procedures of introducing a group III metal vapor to the surface of the substrate at a base pressure of at least 0.01 Pa, until a plurality of group III metal drops form on the surface, and introducing active nitrogen to the surface at a working pressure of between 0.05 Pa and2.5 Pa, until group III metal nitride molecules form on the group III metal drops. The method also includes the procedures of maintaining the working pressure and the active nitrogen until the group III metal nitride molecules diffuse into the group III metal drops, forming nitride/metal solution drops, and until the nitride/metal solution drops turn into a wetting layer on the substrate, and continuing to increase the concentration of group III metal nitride molecules in the wetting layer until all the group III metal atoms contained in the wetting layer are exhausted, and the wetting layer transforms into a group III metal nitride film.

The invention relates to a nitrogen-doped ordered porous high-conductivity graphene fiber, a preparation method and application thereof. The nitrogen-doped ordered porous high-conductivity graphene fiber is characterized in that the mass doping amount range of active nitrogen is 0.7-26.3%; and the fiber diameter is 25-350 micrometers. The nitrogen-doped ordered porous high-conductivity graphene fiber is prepared according to the steps of preparing a high-concentration graphene oxide dispersion according to a Hummers improved method through using natural graphite flakes as a raw material; sufficiently mixing the graphene oxide dispersion and water-soluble nitrogen-containing precursor to be even, injecting the mixture into a cylindrical elongated pipe and sealing two ends of the pipe, performing heating and pre-reduction for obtaining an amino functionalized graphene fiber; opening the sealing part at two ends, performing drying for obtaining a dewatered amino functionalized graphene fiber; and performing heating and temperature keeping on the condition of continuous gas protection, thereby obtaining the nitrogen-doped ordered porous high-conductivity graphene fiber. The nitrogen-doped ordered porous high-conductivity graphene fiber has advantages of low cost, simple process, environment-friendly performance, and high suitability for large-scale industrial production. Furthermore a prepared capacitor has advantages of high flexibility, high specific capacitance, high circularity, and high suitability for many fields of energy storage, flexible wearable electronic devices, etc.