19 results about "Active nitrogen" patented technology

The invention relates to a silicon nitride crystal based on high static nitrogen pressure and active nitrogen regulation and a growth method thereof. The silicon nitride crystal is prepared by the growth method, and the method adopts a physical gas phase transmission process and specifically comprises the following steps: introducing high static pressure nitrogen (1-3 bar) and trace NH3 / N2 mixed gas into source powder formed by mixing high-purity beta-Si3N4 and polycrystalline silicon, and dynamically maintaining the gas phase N / Si molar ratio to be (1.33 + / -0.1): 1, thereby inhibiting the decomposition of the source powder and stabilizing the crystal growth; carrying out spray granulation on the source powder, carrying out compression molding, placing the obtained product in a graphite crucible with the inner wall coated with TaC, and carrying out ordered epitaxial growth by controlling the temperature difference of a temperature zone at 1800-2000 DEG C and the axial temperature gradient; according to the method, the dislocation density and the carbon impurity content of the silicon nitride crystal can be remarkably reduced, then the high-purity silicon nitride crystal with a complete structure and a smooth surface is obtained, and the method is suitable for the fields of high-temperature electronic devices and deep ultraviolet light electronics.

The invention discloses a high-activity nitrogen-doped hard carbon negative electrode material and a preparation method thereof, high specific capacity is obtained, the problem that the initial coulombic efficiency of existing hard carbon is not high is solved, a prepared product is good in conductivity and high in activity, the capacity is high when the product is used as a lithium ion battery, and the obtained material mainly has the following characteristics that (1) the specific capacity is high and is 190-260mAh / g; (3) first coulombic efficiency gt; 80%.

The present disclosure relates to a cosmetic composition having anti-inflammatory activity. According to the present disclosure, provided is a cosmetic composition capable of inhibiting the production of an active nitrogen substance, which is an inflammatory mediator involved in the induction of inflammation in a cell.

This invention discloses a nitrogen-based, fully flowable amination method for molybdenum-based materials, comprising the following steps: S1, pretreating the molybdenum-based material in a reducing atmosphere; S2, subjecting the pretreated molybdenum-based material to high-temperature nitridation at a first temperature in a nitrogen-containing gas atmosphere to form a molybdenum nitride catalyst with a core-shell structure, wherein the core layer is metallic molybdenum and the shell layer is molybdenum nitride; S3, after lowering the ambient temperature to a second temperature, introducing alcohol vapor to contact the molybdenum nitride catalyst for an amination reaction to generate amine products; S4, continuously collecting the amine products using an acidic absorbent; S5, repeating steps S2-S4 to achieve continuous production. This invention uses molybdenum as the catalytic active center, first nitriding and cracking nitrogen gas at high temperature to generate active nitrogen species, which then react with alcohols to generate corresponding amine substances.

The invention discloses a method for improving efficiency of PE-back film substrate surface ammonia ionization pretreatment, and relates to the technical field of back film silicon nitride deposition. Aiming at the problems of high Si-H bond dangling bond defect on the surface of a silicon wafer, insufficient nitrogen content of a nitride interface, large refractive index fluctuation of a silicon nitride film and the like existing in the conventional PECVD (Plasma Enhanced Chemical Vapor Deposition) method for preparing back film silicon nitride, NH3 plasma pretreatment is carried out on the surface of SiOx / poly-Si; by means of implantation of active nitrogen free radicals, Si dangling bond defects are repaired in situ, a transition layer is formed, the synergistic effect of stress matching is enhanced, and the passivation performance is improved. The specific process comprises the steps of boat entering, constant-temperature heating, vacuumizing, leak detection, ammonia gas pretreatment (10000-flow ammonia gas is introduced, a radio-frequency power supply discharges 10000 W, the pressure is 1800 mtorr, and the time is 200 s), silicon nitride coating and the like. Experiments show that by means of the method, the efficiency can be improved by 0.10% or above, the yield is not affected, coating particle impurity abnormity can be reduced, and the EL yield is improved.

The application discloses a mild aflatoxin reduction process for food, and belongs to the technical field of food processing. The mild aflatoxin reduction process for food comprises the following steps: S1, treating food with plasma-activated water, and separating / removing the plasma-activated water; S2, treating the food with superheated steam again, and cooling, so as to complete the reduction of aflatoxin in the food. The application first utilizes active oxygen and active nitrogen substances to oxidize and destroy the molecular structure of aflatoxin and weaken the thermal stability of the aflatoxin, and then accelerates the decomposition and volatilization of degradation products through superheated steam, so as to finally realize the synergistic reduction. The process of the application not only realizes the efficient reduction of aflatoxin, but also effectively reduces the risks of quality changes such as oil rancidity, texture deterioration and nutrient loss. The process of the application is suitable for various food systems such as grains, nuts and oil materials, and has the advantages of high treatment efficiency, wide application range, good quality maintenance effect and no chemical residues.

The invention relates to a method for improving the germination rate and the growth and development capability of radish seeds by using a low-temperature plasma technology. The low germination rate and slow growth of radish seeds are important problems in current agricultural production, and the yield and economic benefits are affected. The low-temperature plasma promotes metabolism of the seeds, breaks the dormant state, accelerates germination and enhances stress resistance by generating active substances such as active oxygen and active nitrogen. The invention provides a specific low-temperature plasma treatment method which comprises the following steps: putting radish seeds into equipment, introducing argon, and treating at a specific voltage. Experimental results show that after low-temperature plasma treatment, the germination rate of radish seeds is remarkably increased, and growth indexes such as root length, plant height and weight of seedlings are also remarkably superior to those of a control group. The technology is easy and convenient to operate and remarkable in effect, can be widely applied to agricultural production, and improves the germination rate and growth and development capacity of radish seeds.

1. Name of the designed product: packing box (Gamma active nitrogen acid high drink). 2. Use of the designed product: as packing box of articles. 3. Design points of the designed product: in the combination of shape and pattern. 4. Picture or photo showing the design points: perspective view 1.

PROBLEM TO BE SOLVED: To provide a culture method or the like capable of performing culture properly . SOLUTION: One aspect of the present invention provides a culture method comprising a detection step and an introduction step. In the detection step, one or more feature values are detected from a culture target and / or a culture medium in which a culture target is cultured. Here, the culture target includes one or more selected from the group consisting of microorganisms and cells. In the introduction step, an active species is introduced into the culture medium. Here, the active species includes one or more selected from the group consisting of active oxygen species, active nitrogen species, and active carbon species. In the introduction step, the mode of introduction of the active species is controlled based on the one or more feature values detected.

The application discloses a preparation method of a nitrided layer and a process equipment of a semiconductor device. The preparation method comprises the following steps: obtaining a nitrogen source gas; dissociating the nitrogen source gas into plasma through an inductive coupling mode; exposing a wafer to active nitrogen species in the plasma to form an initial nitrided layer on the surface of the wafer; performing high-temperature treatment on the initial nitrided layer to obtain a deep nitrided layer; and performing low-temperature treatment on the deep nitrided layer to solidify the deep nitrided layer. By performing the steps, ion damage to the wafer can be reduced, and meanwhile, the nitrogen concentration and the nitridation depth of the nitrided layer are improved, so that the performance and the reliability of the semiconductor device are improved, and the device demand for higher performance is met.

The application discloses a copper-cobalt bimetallic nanoreactor for generating active nitrogen and a preparation method and application thereof, and relates to the technical field of nanomaterial synthesis. The application is characterized in that polyvinylpyrrolidone-coated CuO2 nanodots, hexadecyl trimethyl ammonium bromide, Co(NO3)2*6H2O and 2-methyl imidazole are reacted, and the active component CuO2 for self-supplying hydrogen peroxide is encapsulated in a metal-organic framework material ZIF-67 to obtain CuO2@ZIF-67; then the CuO2@ZIF-67 is mixed with an L-arginine solution to perform functional modification, and a Co(OH)2 dissociation layer is formed on the surface of the ZIF-67, so that the L-arginine is anchored on the surface of the ZIF-67, and finally, a copper-cobalt bimetallic nanoreactor for generating active nitrogen is prepared. The copper-cobalt bimetallic nanoreactor has the characteristics of self-supplying hydrogen peroxide, peroxidase and releasing nitric oxide, and can effectively realize efficient and controllable generation of active nitrogen species, i.e., peroxynitrite.

A method for bonding wafers includes receiving a first wafer and a second wafer, the first wafer including a first bonding layer, the second wafer including a second bonding layer. The method further includes performing a surface activation plasma (SAP) treatment on the first bonding layer of the first wafer to form a first treated layer by exposing the first bonding layer to a plasma, the SAP treatment introducing nitrogen groups including inactive nitrogen termination sites on an exposed surface of the first bonding layer. And the method further includes striking the first wafer to bond the first treated layer of the first wafer with the second wafer to form a bonded wafer.

The present application relates to the field of gas phase chemistry and environmental control technology, and specifically to an energy coupling type environmental gas phase transduction method, which sequentially generates active oxygen species by exciting oxygen and water molecules in the airflow through first-stage energy injection, realizes instant oxidation inactivation of pathogens and degradation of organic matter in aerosol, and after completing particle purification through a particle and aerosol removal module, generates active nitrogen species through second-stage energy injection, completes reduction and neutralization of residual active species and releases reaction heat energy, finally realizes reaction energy recycling and output gas temperature and humidity precise regulation through an energy recovery and temperature and humidity regulation unit, realizes self-adaptive regulation of operating conditions based on redox potential and temperature and humidity parameter feedback and supporting intelligent closed-loop control, and has the advantages of significant energy-saving effect, active epidemic prevention, environmental friendliness and wide application range, and can be widely applied to multiple fields such as aerospace, medical treatment and building heating.

The invention relates to the technical field of atmospheric environment monitoring and analytical chemistry, and discloses an accurate measurement and conversion mechanism research method of an atmospheric active nitrogen oxide component, and the method comprises the following steps: constructing a pneumatic virtual wall suspension flow field through coaxial flow, focusing gas to be measured into filamentous flow which is not in contact with a pipe wall, and eliminating adsorption loss; non-contact transient temperature scanning is implemented by using focused infrared radiation, and different components are sequentially thermally dissociated at characteristic temperatures according to the activation energy difference; after the reaction, forcibly mixing high-temperature gas and low-temperature sheath gas by utilizing flow field driving to realize active thermal quenching, and freezing a chemical state; the total nitrogen dioxide concentration is detected by adopting a phase moving cavity enhanced absorption spectrum; and finally, establishing a concentration-temperature response relationship, and obtaining the independent concentration of each component through differential processing and inversion calculation. According to the invention, the problems of serious tube wall adsorption effect, thermal conversion retardation and multi-component spectrum overlapping interference in traditional measurement are solved, and high temporal-spatial resolution and high-sensitivity accurate measurement of atmospheric active nitrogen oxides is realized.

The invention discloses a polylactic acid-based film with efficient active nitrogen-mediated photodynamic bacteriostatic activity and a preparation method thereof, and relates to the technical field of food packaging films.The method comprises the following steps that PLA serves as a film matrix, DA serves as a surface modification raw material, and a PLA / PDA film is formed on the surface of a PLA film through polymerization and cross-linking reaction; bBRArgCMCDTAT is used as PS, carboxyl groups on the PS are utilized, coupling treatment with the PLA / PDA film subjected to surface modification is carried out through an amide reaction or an esterification reaction, covalent grafting is carried out, and the PLA / PDA / PS film with efficient photodynamic antibacterial activity is obtained. The PDI antibacterial film obtained from the polylactic acid-based film has excellent mechanical properties, and generates a large amount of RNS under the irradiation of white light to efficiently kill gt; the treatment time is short, the sterilization efficiency is high, and the operation is simple and convenient.

The present invention provides a culture method and the like that enables proper culture. [Solution] According to one aspect of the present invention, there is provided a culture method comprising a detection step and an introduction step, in which the detection step detects one or more characteristic quantities from a culture object and / or a culture medium in which the culture object is cultured, wherein the culture object includes one or more selected from the group consisting of microorganisms and cells, and the introduction step introduces active species into the culture medium, wherein the active species includes one or more selected from the group consisting of active oxygen species, active nitrogen species, and active carbon species, and the introduction step controls the introduction mode of the active species based on the detected one or more characteristic quantities.

The invention discloses a porous carbon material and a template-free preparation method thereof. The specific surface area of the porous carbon material is not less than 500 m < 2 > / g, and the total content of pyrrole nitrogen and pyridine nitrogen accounts for not less than 85% of the total nitrogen element; the method comprises the following steps: dissolving carboxylated chitosan and glucosamine hydrochloride in water to obtain a mixed solution; carrying out hydrothermal reaction on the mixed solution to form a hydrogel precursor with a gap structure; and drying the precursor, and carrying out carbonization treatment in an inert atmosphere to finally obtain the porous carbon material rich in pyrrole nitrogen and pyridine nitrogen. The method does not need to use any template agent and etching agent, and is simple in process, low in cost, green, environment-friendly and easy for large-scale production. The porous carbon material prepared by the invention has high specific surface area and high content of electrochemical active nitrogen species, and the lithium ion battery silicon-carbon negative electrode material prepared by taking the porous carbon material as a substrate shows excellent electrochemical performance.

The invention discloses a plasma nitrogen fixation method and device based on a transition metal-based oxide catalyst, and belongs to the technical field of energy and environment, the plasma nitrogen fixation method comprises the following steps: placing the transition metal-based oxide catalyst in a plasma reactor; introducing nitrogen-containing gas into the plasma reactor, and activating the nitrogen-containing gas into nitrogen oxide under the action of plasma and the transition metal-based oxide catalyst; nitrogen oxides are introduced into an alkali solution for absorption. The plasma is utilized to directly crack N2 and O2 through high-energy electron collision to generate active nitrogen / oxygen species, and the transition metal-based oxide catalyst is combined to promote N2 dissociation, so that the high-temperature and high-pressure limitation of the traditional Harber method is overcome, nitrogen fixation at normal temperature and normal pressure is realized, and the energy consumption potential is lower.

The invention discloses a copper-cobalt bimetallic nano-reactor for generating active nitrogen and a preparation method and application thereof, and relates to the technical field of nano-material synthesis. The preparation method comprises the following steps: reacting polyvinylpyrrolidone coated CuO2 nanodots, cetyltrimethylammonium bromide, Co (NO3) 26H2O and 2-methylimidazole, and encapsulating an active component CuO2 for self-supply of hydrogen peroxide in a metal-organic framework material ZIF-67, so as to obtain CuO2 ZIF-67. The preparation method comprises the following steps: carrying out a reaction on the CuO2 nanodots coated with polyvinylpyrrolidone, cetyltrimethylammonium bromide, Co (NO3) 26H2O and 2-methylimidazole; the preparation method comprises the following steps: taking ZIF-67 as a raw material, then mixing the ZIF-67 with an L-arginine solution to carry out functional modification, and forming a Co (OH) 2 dissociation layer on the surface of the ZIF-67, so that L-arginine is anchored on the surface of the ZIF-67, and finally preparing the copper-cobalt bimetallic nano reaction generating active nitrogen. The copper-cobalt bimetallic nano-reactor has the characteristics of self-supply of hydrogen peroxide and peroxidase and release of nitric oxide at the same time, and can effectively realize efficient and controllable generation of an active nitrogen species-nitrite peroxide.