Group-iii metal nitride and preparation thereof
A nitride and metal technology, which is applied in the field of preparation of Group III metal nitride films and can solve the problems of low epitaxial deposition rate and the like
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[0029] The technology disclosed in the present invention overcomes the disadvantages of the prior art through the thin film of crystalline or amorphous group III metal nitride and its preparation method. According to the disclosed technique of the present invention, a wetting layer of GaN / Ga solution is formed by exposing Ga droplets grown on a substrate to active nitrogen. The wetting layer is further exposed to reactive nitrogen, which reacts with gallium atoms on the surface of the wetting layer to form GaN molecules. Depending on the thickness of the wetting layer, different types of films (eg, amorphous or crystalline films) can be formed.
[0030] In thinner wetting layers (on the order of up to 50 nm), GaN molecules diffuse into the bulk of the solution, increasing its viscosity. Eventually, all gallium atoms in the reaction are depleted, and the wetting layer transforms into a solid amorphous GaN layer.
[0031] In a thicker wetting layer (in the order of 500 nm-1 μm...
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