Group-iii metal nitride and preparation thereof

A nitride and metal technology, which is applied in the field of preparation of Group III metal nitride films and can solve the problems of low epitaxial deposition rate and the like

Inactive Publication Date: 2010-03-03
MOSAIC CRYSTALS
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  • Abstract
  • Description
  • Claims
  • Application Information

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  • Group-iii metal nitride and preparation thereof
  • Group-iii metal nitride and preparation thereof
  • Group-iii metal nitride and preparation thereof

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[0029] The technology disclosed in the present invention overcomes the disadvantages of the prior art through the thin film of crystalline or amorphous group III metal nitride and its preparation method. According to the disclosed technique of the present invention, a wetting layer of GaN / Ga solution is formed by exposing Ga droplets grown on a substrate to active nitrogen. The wetting layer is further exposed to reactive nitrogen, which reacts with gallium atoms on the surface of the wetting layer to form GaN molecules. Depending on the thickness of the wetting layer, different types of films (eg, amorphous or crystalline films) can be formed.

[0030] In thinner wetting layers (on the order of up to 50 nm), GaN molecules diffuse into the bulk of the solution, increasing its viscosity. Eventually, all gallium atoms in the reaction are depleted, and the wetting layer transforms into a solid amorphous GaN layer.

[0031] In a thicker wetting layer (in the order of 500 nm-1 μm...

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Abstract

A method for forming a group-III metal nitride material film attached to a substrate, the method including the procedures of subjecting the substrate to an ambient pressure of no greater than 0.01 Pa,and heating the substrate to a temperature of between approximately 500 DEG C-800 DEG C. The method further includes the procedures of introducing a group III metal vapor to the surface of the substrate at a base pressure of at least 0.01 Pa, until a plurality of group III metal drops form on the surface, and introducing active nitrogen to the surface at a working pressure of between 0.05 Pa and2.5 Pa, until group III metal nitride molecules form on the group III metal drops. The method also includes the procedures of maintaining the working pressure and the active nitrogen until the group III metal nitride molecules diffuse into the group III metal drops, forming nitride/metal solution drops, and until the nitride/metal solution drops turn into a wetting layer on the substrate, and continuing to increase the concentration of group III metal nitride molecules in the wetting layer until all the group III metal atoms contained in the wetting layer are exhausted, and the wetting layer transforms into a group III metal nitride film.

Description

technical field [0001] The present invention generally relates to Group III metal nitrides, and in particular to the preparation of Group III metal nitride thin films. Background technique [0002] An amorphous material is a solid in which atoms do not exhibit long range order, and unlike a crystalline material having a regularly repeating internal structure, the atoms of an amorphous material are irregularly bonded to each other. An example of an amorphous material is common window glass, which forms when molten silicates with high viscosity cool, not allowing the formation of a regular crystal lattice. The amorphous state of glass leads to various practical optical properties, such as its transparency. The presence of various contaminants and impurities can significantly affect the final properties of the amorphous material (eg, its color, clarity, melting point). [0003] Group III metals of the periodic table (ie aluminum, gallium and indium) are capable of forming nit...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/14C23C14/58C30B23/02C30B29/40
CPCC23C14/5826C23C14/0026C30B29/403C30B23/02C30B29/406C23C14/0617C23C14/586C30B25/02C23C14/14B82Y40/00C23C14/06C23C14/58
Inventor 摩西·埃纳威
Owner MOSAIC CRYSTALS
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