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17859results about "Nanotechnology" patented technology

Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device

An object of the present invention is to provide a method for easily forming a polycrystalline semiconductor thin-film, such as polycrystalline silicon having high crystallinity and high quality, or a single crystalline semiconductor thin-film at inexpensive cost, the crystalline semiconductor thin-film having a large area, and to provide an apparatus for processing the method described above. In forming a polycrystalline (or single crystalline) semiconductor thin-film (7), such as a polycrystalline silicon thin-film, having high crystallinity and a large grain size on a substrate (1), or in forming a semiconductor device having the polycrystalline (or single crystalline) semiconductor thin-film (7) on the substrate (1), a method comprises forming a low-crystallization semiconductor thin-film (7A) on the substrate (1), and subsequently heating and cooling this low-crystallization semiconductor thin-film (7A) to a fusion, a semi-fusion, or a non-fusion state by flash lamp annealing to facilitate the crystallization of the low-crystallization semiconductor thin-film, whereby a polycrystalline (single crystalline) semiconductor thin-film (7) is obtained. A method for forming the semiconductor device and an apparatus for processing the methods are also disclosed.
Owner:SONY CORP

Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device

An object of the present invention is to provide a method for easily forming a polycrystalline semiconductor thin-film, such as polycrystalline silicon having high crystallinity and high quality, or a single crystalline semiconductor thin-film at inexpensive cost, the crystalline semiconductor thin-film having a large area, and to provide an apparatus for processing the method described above. In forming a polycrystalline (or single crystalline) semiconductor thin-film (7), such as a polycrystalline silicon thin-film, having high crystallinity and a large grain size on a substrate (1), or in forming a semiconductor device having the polycrystalline (or single crystalline) semiconductor thin-film (7) on the substrate (1), a method comprises forming a low-crystallization semiconductor thin-film (7A) on the substrate (1), and subsequently heating and cooling this low-crystallization semiconductor thin-film (7A) to a fusion, a semi-fusion, or a non-fusion state by flash lamp annealing to facilitate the crystallization of the low-crystallization semiconductor thin-film, whereby a polycrystalline (single crystalline) semiconductor thin-film (7) is obtained. A method for forming the semiconductor device and an apparatus for processing the methods are also disclosed.
Owner:SONY CORP

Carbon nano-dot, and preparation method and application thereof

ActiveCN102849722AOvercome costsOvercoming the problem of easy fluorescence quenching in the aggregated stateNanotechnologyNano-carbonBiological imagingOrganic compound
The invention discloses a carbon nano-dot, and a preparation method and an application thereof, and solves a problem that the application of present nano-dots is restricted because of high preparation cost and easy fluorescent quenching appearance of an aggregate state. According to the invention, the carbon nano-dot having a high fluorescence quantum efficiency is prepared through adopting a polycarboxyl or polyhydroxy contained organic compound, or an amino acid as a raw material, and urea as a surface passivation modification agent, and through a microwave process, and a carbon nano-dot fluorescent ink is prepared through using the carbon nano-dot. The preparation method disclosed in the invention has the advantages of simplicity, low cost and convenient large-scale production; the fluorescent quenching of the prepared carbon nano-dot on the surface of a biological product does not appear, and the highest fluorescence quantum efficiency is 42%; and the prepared carbon nano-dot fluorescent ink is nontoxic, does not generate a precipitate after long-time dispose, and can be applied to the biological imaging field, the biological product identification field, the information storage field, the information encryption field, the false proof field, the illumination display field, the photovoltaic device field and the like.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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