425 results about "Wave function" patented technology

A packaged light emitting device. The device includes a substrate member comprising a surface region and one or more light emitting diode devices overlying the surface region. In a specific embodiment, at least one of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The one or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission of one or more first wavelengths. At least at least one of the light emitting diode devices comprise a quantum well region, which is characterized by an electron wave function and a hole wave function. In a specific embodiment, the electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. In a specific embodiment, the device has a thickness of one or more entities formed overlying the one or more light emitting diode devices. The one or more entities are excited by the substantially polarized emission and emitting electromagnetic radiation of one or more second wavelengths.

A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and / or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and / or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

The present invention describes nanophotonic materials and devices for both classical and quantum optical signal processing, transmission, amplification, and generation of light, which are based on a set of quantum systems having a discrete energy levels, such as atoms, molecules, or quantum dots, embedded in a frequency bandgap medium, such as artificial photonic crystals (photonic bandgap materials) or natural frequency dispersive media, such as ionic crystals, molecular crystals, or semiconductors, exhibiting a frequency (photonic) bandgap for propagating electromagnetic modes coupled to optical transitions in the quantum systems. If the frequency of one of optical transitions, called the working transition, lies inside the frequency bandgap of the medium, then spontaneous decay of the working transition into propagating photon modes is completely suppressed. Moreover, the excitation of the working transition and a photon form a photon-quantum system bound state lying inside the photonic bandgap of the medium, in which radiation is localized in the vicinity of the quantum system. In a quantum system “wire” or a quantum system “waveguide”, made of spatially disordered quantum systems, or in a chain quantum system waveguide made of a periodically ordered identical quantum systems, wave functions of the photon-quantum system bound states localized on different quantum systems overlap each other and develop a photonic passband lying inside bandgap of the photonic bandgap medium.

A non-volatile programmable electro-optical element alters absorption characteristics of an optical medium that comprises a doped transition metal oxide material including F-centers. The F-centers are electrostatically moved into or out of the regions containing a wavefunction of an optical beam. A specific F-center profile in the transition metal oxide material may be programmed into the optical medium. The F-center profile alters an absorption profile within the optical medium. The spectral range for transmission of electromagnetic radiation in the optical medium may be tailored by the F-centers. Once the absorption profile is set by an electrical signal, the optical element maintains its state even when the electrical signal is turned off. Thus, the programming node may be disconnected from a power supply network, thereby enabling a low power operation of the electro-optical element. The inventive electro-optical element may be employed for both the visible and the infrared wavelength spectrum.