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Energy band adjustable light-emitting diode (LED) quantum well structure

A quantum well and energy band technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of low radiation recombination efficiency

Active Publication Date: 2013-09-11
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

[0004] The problem to be solved by the present invention is the problem of low radiation recombination efficiency in multiple quantum wells in the active region of light emitting diodes

Method used

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  • Energy band adjustable light-emitting diode (LED) quantum well structure
  • Energy band adjustable light-emitting diode (LED) quantum well structure
  • Energy band adjustable light-emitting diode (LED) quantum well structure

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Embodiment Construction

[0016] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0017] refer to figure 1 As shown, the present invention discloses a LED quantum well structure device with adjustable energy band. The epitaxial growth direction is from bottom to top, wherein the crystal planes corresponding to the epitaxial growth direction are polar planes and semipolar planes, preferably (0001 )Planes. The quantum well structure of the device along the epitaxial growth direction includes:

[0018] A conventional quantum well 13, which is formed by alternately and repeatedly growing a quantum well barrier layer 11 and a quantum well potential layer 12; wherein the material of the quantum well barrier layer 11 is In x Ga 1-x N, 0≤x≤1, the thickness is 7-20nm; the material of the quantum well potenti...

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Abstract

The invention discloses an energy band adjustable light-emitting diode (LED) quantum well structure and an epitaxial growth method thereof, wherein the energy band adjustable LED quantum well structure can improve radiative recombination efficiency in multiple quantum wells of an active area of an LED. The energy band adjustable LED quantum well structure comprises at least one quantum well potential well layer with component changing gradually, energy band control of a quantum well area can be achieved, electron hole wave function superposition in the active area of the quantum well can be improved, and radiative recombination efficiency of the LED quantum well area can be improved. The multiple quantum well structure can be applied to InGaN-based blue or green LEDs, improves internal quantum efficiency of active areas of the InGaN-based blue or green LEDs and further improves LED power and efficiency.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to an LED quantum well structure with adjustable energy band. The invention can effectively improve the internal quantum efficiency of the light-emitting diode, thereby improving the radiation efficiency and power of the LED, and can be used in blue and green LEDs. Background technique [0002] In recent years, with the rapid development of gallium nitride-based LEDs, the efficiency of white LEDs has been greatly improved, and it is just around the corner to replace the incandescent and fluorescent lamps currently used for lighting. However, its efficiency still has a lot of room for improvement compared with the theoretical value. For a long time, there are many factors that limit the improvement of white LED efficiency. One of the problems that has attracted the attention of many scholars is the attenuation of LED efficiency under high current. There are many factors tha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/00
Inventor 张连曾建平路红喜王军喜李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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