2 results about "Quantum well laser" patented technology

The application discloses an optical multiplier system for processing high-speed data flow and a method thereof, and belongs to the technical field of semiconductors, comprising a stibonium quantum well laser, an intensity modulator, a phase modulator, a balanced homodyne detector and an oscilloscope; the stibonium quantum well laser is used as a light source, light signals output by the stibonium quantum well laser are evenly divided into two light beams by a Y-type beam splitter, and the two light beams are defined as x-vector light beams and y-vector light beams respectively; the two light beams sequentially pass through the intensity modulator and the phase modulator to complete real number and complex number coding; after the two light beams are coupled by a beam splitter / coupler, the two light beams are input to the balanced homodyne detector for detection, and the photocurrent output by the balanced homodyne detector is calculated to obtain a differential current, the differential current is collected and displayed in real time by the oscilloscope, and the differential current is the vector point multiplication operation result corresponding to the two vector light beams. The application has the characteristics of low cost, low energy consumption, high speed, expandability and the like.

The application provides a semiconductor quantum well structure for inhibiting carrier lateral diffusion and a preparation method. The structure comprises a lower barrier layer, a quantum well layer, a nucleation structure and an upper barrier layer which are sequentially stacked. The nucleation structure is island-shaped and / or groove-shaped, and the nucleation structure does not completely cover the quantum well layer. The band gap width of the nucleation structure is not equal to the band gap width of the upper barrier layer. The application can reduce the lateral diffusion of carriers in the quantum well, thereby reducing the non-radiative recombination of carriers in the dislocation area of the quantum well structure and improving the light emitting performance of the quantum well structure. The tolerance of a laser using the quantum well structure as an active region to dislocations will be obviously improved, especially for a Ⅲ-Ⅴ semiconductor quantum well laser grown by heteroepitaxy on a silicon substrate. The application is feasible, provides a new scheme for the growth of a semiconductor quantum well structure, and will promote the application of a corresponding semiconductor quantum well laser in a silicon-based optoelectronic integrated chip.