6 results about "Quantum well laser" patented technology

The invention relates to the technical field of semiconductor electronic devices, and discloses an aluminum-based quantum well laser and an in-situ interface processing method thereof. After a low-aluminum active region with a strain compensation structure is grown and before a high-aluminum electron barrier layer is grown, the in-situ interface treatment method comprises the following steps: maintaining the temperature of a substrate at a first temperature for a first time in a V-group source atmosphere; reducing the temperature of the substrate from the first temperature to a third temperature, and introducing an aluminum source to perform strain surface pre-adsorption; introducing an aluminum source and other III-group sources except the aluminum source to grow a high-aluminum nucleating layer; and raising the temperature of the substrate from the third temperature to a fourth temperature, and growing the main body part. According to the in-situ interface processing method, the low-defect interface is obtained through the steps of strain surface relaxation, aluminum atom pre-adsorption, low-temperature nucleation and solid-state epitaxial conversion, lattice connection is achieved between the high-aluminum electron barrier layer and the low-aluminum active area with the strain compensation structure below, and the defect density of the interface is effectively reduced.

The application discloses an optical multiplier system for processing high-speed data flow and a method thereof, and belongs to the technical field of semiconductors, comprising a stibonium quantum well laser, an intensity modulator, a phase modulator, a balanced homodyne detector and an oscilloscope; the stibonium quantum well laser is used as a light source, light signals output by the stibonium quantum well laser are evenly divided into two light beams by a Y-type beam splitter, and the two light beams are defined as x-vector light beams and y-vector light beams respectively; the two light beams sequentially pass through the intensity modulator and the phase modulator to complete real number and complex number coding; after the two light beams are coupled by a beam splitter / coupler, the two light beams are input to the balanced homodyne detector for detection, and the photocurrent output by the balanced homodyne detector is calculated to obtain a differential current, the differential current is collected and displayed in real time by the oscilloscope, and the differential current is the vector point multiplication operation result corresponding to the two vector light beams. The application has the characteristics of low cost, low energy consumption, high speed, expandability and the like.

The present disclosure provides a quantum well laser epitaxial structure and a quantum well laser, the epitaxial structure comprising: a substrate, a buffer layer, a lower cladding layer, a lower waveguide layer, a quantum well active region, an upper waveguide layer, an upper cladding layer and a contact layer stacked in sequence; wherein the lower cladding layer is used to limit the laser leakage to a first direction, and the upper cladding layer is used to limit the laser leakage to a second direction; the band gap width of the lower waveguide layer is between the lower cladding layer and the quantum well active region, and the band gap width of the lower waveguide layer is greater than the band gap width of the quantum well active region, and the refractive index of the lower waveguide layer is greater than the refractive index of the lower cladding layer; and the quantum well active region comprises one or more quantum well layers and a chirped barrier arranged in mutual overlap, and the chirped barrier is used to reflect electrons and holes to limit the recombination of the electrons and holes in the quantum well layer to emit light. The epitaxial structure of the present disclosure enhances the interaction of electrons and holes, can improve the optical gain, and reduce the device threshold current and improve the characteristic temperature.

The application provides a semiconductor quantum well structure for inhibiting carrier lateral diffusion and a preparation method. The structure comprises a lower barrier layer, a quantum well layer, a nucleation structure and an upper barrier layer which are sequentially stacked. The nucleation structure is island-shaped and / or groove-shaped, and the nucleation structure does not completely cover the quantum well layer. The band gap width of the nucleation structure is not equal to the band gap width of the upper barrier layer. The application can reduce the lateral diffusion of carriers in the quantum well, thereby reducing the non-radiative recombination of carriers in the dislocation area of the quantum well structure and improving the light emitting performance of the quantum well structure. The tolerance of a laser using the quantum well structure as an active region to dislocations will be obviously improved, especially for a Ⅲ-Ⅴ semiconductor quantum well laser grown by heteroepitaxy on a silicon substrate. The application is feasible, provides a new scheme for the growth of a semiconductor quantum well structure, and will promote the application of a corresponding semiconductor quantum well laser in a silicon-based optoelectronic integrated chip.

The present disclosure provides a quantum well laser and a preparation method thereof. The laser comprises a first electrode, a patterned substrate arranged on an upper surface of the first electrode, an upper surface of the patterned substrate being etched with a groove, an epitaxial layer grown in the groove and extending out of the groove to cover a predetermined area of the upper surface of the patterned substrate, an area of the predetermined area being smaller than an area of the patterned substrate, a filling layer filled between a sidewall of the epitaxial layer and the upper surface of the patterned substrate, a height of the filling layer being greater than a height of the epitaxial layer, and a second electrode located on an upper surface of the epitaxial layer and the filling layer.

The application relates to the technical field of semiconductor electronic devices, and discloses an aluminum-based quantum well laser and an in-situ interface processing method thereof. After a low-aluminum active region with a strain compensation structure is grown, and before a high-aluminum electron blocking layer is grown, the in-situ interface processing method comprises the following steps: maintaining the substrate temperature at a first temperature for a first time under a V-group source atmosphere; reducing the substrate temperature from the first temperature to a third temperature and inputting an aluminum source to perform strain surface pre-adsorption; then inputting the aluminum source and other III-group sources other than the aluminum source to grow a high-aluminum nucleation layer; and raising the substrate temperature from the third temperature to a fourth temperature to grow a main body part. The in-situ interface processing method of the application obtains a low-defect interface through the steps of strain surface relaxation, aluminum atom pre-adsorption, low-temperature nucleation and solid-state epitaxial transformation, so that the high-aluminum electron blocking layer and the low-aluminum active region below with the strain compensation structure are connected in a lattice, and the interface defect density is effectively reduced.