F-P (Fabry-Perot) cavity strained quantum well laser with low linewidth

A F-P, quantum well technology, applied in the direction of lasers, phonon exciters, laser components, etc., to achieve the effect of reducing spectral width and improving quality

Inactive Publication Date: 2012-01-25
CHANGCHUN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problems existing in the line width of the existing F-P cavity strained quantum well laser, the invention provides a low line width F-P cavity strained quantum well laser

Method used

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  • F-P (Fabry-Perot) cavity strained quantum well laser with low linewidth
  • F-P (Fabry-Perot) cavity strained quantum well laser with low linewidth
  • F-P (Fabry-Perot) cavity strained quantum well laser with low linewidth

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Embodiment 2

[0107] Embodiment 2 The active layer 6 has a thickness of 3nm, and the rest are the same as in Embodiment 1.

Embodiment 3

[0108] Embodiment 3 The active layer 6 has a thickness of 5 nm, and the rest are the same as in Embodiment 1.

[0109]References: [1] Henry C H 1982 Quantum Electron 18 259, [2] Du Baoxun 2004 Principles of Semiconductor Lasers (Beijing: Ordnance Industry Press), [3] Gerhardt N C, Hofmann M R, Hader J, Moloney J V, Koch S W, Riechert H 2004 Appl. Phys.Lett.84 1, [4] Toshiaki Suhara, Translated by Zhou Nansheng, Fundamentals of Semiconductor Lasers (Beijing: Science Press), p. 47, [5] Joachim P 2003 Semiconductor Optoelectronic Devices (California: Academic Press) p7 . , [9] Martin G, Botchkarev A, Rockett A, Morkoc H 1996 Appl.Phys.Lett.68 2541, [10] Huang Dexiu 1994 Semiconductor Optoelectronics (Chengdu: University of Electronic Science and Technology Press) p. 207, [11] Rodriguez D, Borruel L, Esquivias I, Wenzel H, Sumpf B, Erbert G 2004 Photonics Technology Letters 16 1432, [12] Gan K G, Bowers J E 2004 Photonics Technology Letters 16 1256, [13] Gerhardt N C, Hofmann M R...

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Abstract

The invention provides an F-P (Fabry-Perot) cavity strained quantum well laser with low linewidth. The F-P cavity strained quantum well laser comprises a substrate (1), a buffer layer (2), an n type lower limiting layer (3), a lower waveguide layer (4), a lower barrier layer (5), an active layer (6), an upper barrier layer (7), an upper waveguide layer (8), a p type upper limiting layer (9) and an ohmic contact layer (10) which are sequentially connected. Through the optimal design of the active layer (6), a linewidth enhancement factor generated by interband transition of a quantum well and a linewidth enhancement factor generated by free carrier absorption and band-gap shrinkage can offset mutually, thereby realizing the low linewidth and improving the quality of a light beam of the quantum well laser. The active layer of the laser provided by the invention is made of InxGa1-xAs materials, wherein x is equal to 0.33, the width thickness of the well is 3-5nm, the center wavelength lambda is equal to 980nm-1036nm, and the linewidth of the F-P cavity strained quantum well laser can be reduced by three orders of magnitude in comparison with a quantum well laser. The F-P cavity strained quantum well laser can be used for optical measurement, solid-state laser pumping, laser spectroscopy research and other fields.

Description

technical field [0001] The invention relates to the field of semiconductor lasers, in particular to F-P cavity strained quantum well lasers with low line width. Background technique [0002] Semiconductor lasers are widely used in solid-state laser pumping and military applications due to their small size and light weight. Quantum well laser is a new type of semiconductor laser developed in recent years. Since the thickness of the active layer is smaller than the mean free path of electrons, the carriers can only move in the active layer, which improves the conversion efficiency of the laser. The linewidth enhancement factor (Linewidth Enhancement Factor, αfactor) is an important factor affecting the spectral linewidth of semiconductor lasers. It not only directly affects the spectral linewidth of the semiconductor laser, but also affects the mode stability of the laser, the chirp under current modulation, the injection locking range, the optical amplification factor, and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/10H01S5/343
Inventor 李林张帆马晓辉李占国高欣曲铁薄报学刘国军
Owner CHANGCHUN UNIV OF SCI & TECH
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