808nm large-power quantum well laser in non-aluminum active region of asymmetric structure

Abstract

The invention provides an aluminum-free active region 808nm high-power quantum-well laser with asymmetric structure. From the bottom to the top, the structure of the laser sequentially comprises a substrate, a buffer layer, an N-type lower limiting layer, a lower waveguide layer, a quantum-well layer, an upper waveguide layer, a potential barrier limiting layer, a P-type upper limiting layer, a transition layer and an ohmic contact layer, wherein, the upper waveguide layer and the lower waveguide layer are made of aluminum-free material Indium gallium phosphide, the quantum-well layer made of gallium indium arsenide phosphide material, the waveguide layer and the quantum-well layer form the aluminum-free active region, and one layer potential barrier limiting layer which is made of P-type aluminum gallium indium phosphide material and 50nm-150nm thick and has a band gap wider than that of the upper limiting layer is arranged between the upper limiting layer and the upper waveguide layer. The laser of the invention can increase the optical limiting factor of the P-type material region, reduce the optical leakage towards the P-type material region, reduce optical absorption loss of a current carrier at the highly doped area, and improve the work efficiency of the laser; the structure of the invention also improves the limiting effect of the active region on the carrier, reduce the leakage of the carrier and is favorable to the decrease of the threshold current.

Description

technical field [0001] The invention relates to a high-power and high-efficiency 808nm quantum well laser, belonging to the technical field of semiconductor lasers. Background technique [0002] 808nm high-power quantum well lasers are widely used in the fields of pumping Nd:YAG solid-state lasers, industrial processing and laser medical treatment, and have very broad application prospects and market value. With the development of the application, the output power of the laser is required to be higher and higher. [0003] In order to obtain stable high-power output, 808nm high-power quantum well lasers generally adopt symmetrical large optical cavity or even ultra-large optical cavity structures with low optical confinement factors. Among these existing symmetrical structures, aluminum gallium with a thickness of more than 1um is generally used. Arsenic is used as a confinement layer, and gallium indium phosphide above 0.6um or even above 1um is used as a wide waveguide lay...

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Problems solved by technology

At the same time, the lateral mode confinement in the symmetrical structure of the large optical cavity is also very weak,

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