317results about How to "Increase the restrictive effect" patented technology

A structure of multi-wavelength light emitting device comprises multi-stacked active layer structure. Each stacked layer comprises lower energy bandgap well 4 and higher energy bandgap barrier layer 3 wherein at least one stacked layer in the device contains nanoparticles. As a result, the emitting wavelengths of the multi-stacked active layer structure consist parts (or all) of the emitting wavelengths come from the stack layers containing nanoparticles, and parts (or all) of the emitting wavelengths come from the stack layers not containing nanoparticles. In another embodiment, parts (or all) of the emitting wavelengths of the multi-stacked active layer structure can be also used to trigger one or more phosphorescences from the phosphors, thus the emitting wavelengths of such a phosphors converted light emitting device may come partially from the multi-stacked active layer itself and partially (or all) from the phosphors.

An ultraviolet-light-emitting semiconductor diode comprising an n-type ZnO layer with luminous characteristics formed on a transparent substrate, and a p-type semiconductor layer selected from the group consisting of SrCu2O2, CuAlO2 and CuGaO2, which is formed on the n-type ZnO layer to provide a p-n junction therebetween. The transparent substrate is preferably a single crystal substrate having atomically flat yttria-stabilized zirconia (YSZ) (III) surface. The n-type ZnO layer is formed on the transparent substrate having a temperature of 200 to 1200° C., and the p-type semiconductor layer selected from the group of SrCu2O2, CuAlO2 and CuGaO2 is formed on the n-type ZnO layer. The n-type ZnO layer may be formed without heating the substrate, and then the surface of the ZnO layer may be irradiated with ultraviolet light to promote crystallization therein.

An object of the present invention is to provide a substrate for a thin film photoelectric conversion device, in which its properties are not deteriorated when its surface unevenness is effectively increased, and then provide the thin film photoelectric conversion device having its performance improved by using the substrate.

According to the present invention, by setting the surface area ratio of a transparent electrode layer in the substrate for the thin film photoelectric conversion device to at least 55% and at most 95%, the surface unevenness are effectively increased to increase the optical confinement effect, while deterioration in properties due to sharpening of the surface level variation is suppressed, whereby making it possible to provide a substrate for a thin film photoelectric conversion device, which can enhance output properties of the thin film photoelectric conversion device.

The invention discloses a high-breakdown gallium nitride-based field effect transistor device and a manufacturing method thereof. The manufacturing method comprises the following steps of: growing a nucleating layer on a substrate; growing an aluminum-gallium-nitrogen high-resistance buffering layer with a low aluminum component on the nucleating layer; growing a high-mobility gallium nitride channel layer on the aluminum-gallium-nitrogen high-resistance buffering layer; growing a thin aluminum nitride isolating layer on the gallium nitride channel layer; growing an aluminum-gallium-nitrogen barrier layer on the aluminum nitride isolating layer; growing a thin nitride cap layer on the aluminum-gallium-nitrogen barrier layer; and forming a source electrode, a drain electrode and a grid electrode on the nitride cap layer. According to the method, the process complexity is lowered, the breakdown voltage of the gallium nitride-based field effect transistor device is increased effectively, and the mobility of electrons in a channel is increased simultaneously.

In the conventional peak factor reduction technique, since the signal has been changed over broad time width before and behind the peak amplitude, the deterioration in signal quality has been great. Through the use of a compensating signal having impulse property that is generated on the peak amplitude, subtraction from the peak amplitude will be performed. Thereby, since it is possible to reduce the deterioration in signal quality that occurs when reducing the peak factor, the peak factor reduction effect can be further enhanced in the same deterioration in signal quality as the conventional one.

A surface acoustic wave resonator includes a piezoelectric substrate and an interdigital transducer (IDT) that includes electrode fingers exciting a surface acoustic wave on the piezoelectric substrate, a first region at a center of the IDT, and a second region and a third region at opposite sides of the IDT. In the IDT, a line occupation rate at which an electromechanical coupling coefficient becomes a maximum is different from the line occupation rate at which reflection of the surface acoustic wave becomes a maximum.

The invention provides a novel growing method for an extension structure to grow in an ultraviolet LED active area. A plurality of quantum well base layers grow in a special mode, finally the radiation luminescence of ultraviolet light can be achieved better, and the lighting effect of an ultraviolet LED can be improved. According to the method, in the process of growing of a plurality of periods of AlxGal-xN/AlyGal-yN quantum well base layers, the aluminum components of the base layers of the AlyGal-yN change in a progressive increasing mode, the electron barrier crossing barrier energy is reduced at the beginning, the current is evenly extended behind an enhanced barrier, the voltage is reduced, the limitation function of electrons is improved, meanwhile, a hole can be extended towards a center active area in the injection process very well, and the luminous efficiency of the whole ultraviolet LED can be improved, wherein as for each base layer, the Al content keeps constant in the growing process of the base layer.

The present invention provides an electric connector assembly, a plug type connector and a socket type connector. The electric connector assembly has a socket type connector and a plug type connector engaged with the socket type connector, wherein an engaging part of a casing of the plug type connector has a structure difficult to damage. The plug type connector (2) has a reinforcing component (60) arranged at an end part of the engaging part in a terminal arrangement direction, wherein the reinforcing component is made by bending a metal plate used as a component, and the reinforcing component comprises: a base part (61) for covering a lower surface of the end part of the engaging part through a board which is orthogonal to a connector plugging direction as the engaging part of the plug type connector (2) is downward; a side plate part (63) for covering two side surfaces of the end part through boards which are respectively parallel to the terminal arrangement direction and the connector plugging direction; and an end plate part for covering an end surface of the end part through a board which is orthogonal to the terminal arrangement direction.

The invention relates to an improved voice reinforcement method based on multi-target criterion learning. The method comprises the steps of per-processing a signal, wherein a training data set and a testing data set are acquired and subjected to framing and windowing, and a window function type, framing duration and frame shift parameters are determined; calculating a logarithm power spectrum of each frame of signal of noisy voices in the training data set and the testing data set after framing and windowing; calculating a target function of multi-target training; training a deep neural network; testing the network, wherein the logarithm power spectrum of each frame of signal of the noisy voices of the testing data set is used as a characteristic and input to the deep neural network for testing the neural network; taking voice intelligibility, subjective voice quality evaluation and voice quality as evaluation indexes for the intelligibility, sensing effect and voice quality after voice enhancement respectively. According to the method, the adverse influence of phase information of the signals of the noisy voices on the intelligibility and voice quality of the enhanced voice is eliminated, and the method is convenient and easy to implement.

The invention provides a foot rest and a footrest device with the foot rest for a car driver, belongs to the technical field of parts of cars, and aims at solving the problem of the existing foot rest assembly that the non-slip surface provided is small in friction coefficients, the feet of the driver easily forwards slip from the surface of the foot rest. The footrest device with the foot rest for the car driver comprises a base plate and the foot rest; the base plate is arranged on a car carpet that is opposite to the feet of the driver by position; the foot rest comprises a foot rest body that is equipped with the upper end surface; small elastic bulges of different shapes are closely distributed on the upper end surface of the foot rest body; the foot rest covers the base plate and is fixedly connected with the base plate. According to the foot rest and the footrest device with the foot rest for the car driver, the structure of the foot rest surface in the footrest device of the driver is changed, the friction coefficients and contact action area of the soles and the surface of the foot rest are increased, thus the forward motion speed of the feet of a passenger is limited, the crura are stably and uniformly supported, and meanwhile, the comfort of feet in laying is also improved.

The present invention provides an AlGa-based semiconductor ultraviolet device for improving luminous efficiency and a preparation method thereof, and relates to the technical field of semiconductors.The epitaxial structure of the device comprises a substrate, an AlN buffer layer, an n-type AlGaN layer, an AlxGa1-xN/AlyGa1-yN luminescence active region, the last one AlGaN quantum barrier layer, ap-type AlGaN electron blocking layer, a p-type AlGaN layer and a contact layer, wherein 0.01<=x and y<=1. The luminescence active region comprises a plurality of quantum well layers and a plurality ofquantum barrier layers, the quantum well layers and the quantum barrier layers are alternately arranged, and the last one AlGaN quantum barrier layer is an aluminium ingredient gradient layer. The last one AlGaN quantum barrier layer of aluminium ingredient gradient is introduced in the ultraviolet device to optimize the energy band structure of the device, effectively improve the electron restriction effect and enhance the cavity injection efficiency so as to improve the quantum efficiency and the luminescence efficiency of the semiconductor ultraviolet device.

The invention discloses a polyurethane urea rubber composite elastic fiber and a preparation method thereof. According to the preparation method, a butadiene-acrylonitrile rubber material and polyurethane urea are uniformly mixed through a solution blending mode, lots of strong-polarity nitrile groups are introduced into the fiber, and the interaction force of the polymer molecular chain is increased, so that the fiber has high-temperature resistance and alkali and chemical corrosion resistance. Moreover, the operations of vulcanization cross-linking and stock solution fiber forming are simultaneously finished through a low-temperature low-speed spinning process, the limiting effect on the soft segment of polyurethane urea is increased by utilizing a mico-crosslinking network structure formed by a rubber phase in the fiber forming process, and the mechanical strength and thermal stability of the fiber are further improved.

The invention discloses a P type LED epitaxy structure, a growing method and an LED display device. The P type LED epitaxy structure comprises a sapphire substrate, a low-temperature gallium nitride buffer layer, a non-doped gallium nitride layer, an n type gallium nitride layer, a first barrier layer, a shallow quantum well layer, a multiple quantum well layer, an electronic barrier layer, a highly doped P type gallium nitride layer and a contact layer from top to bottom. The highly doped P type gallium nitride layer further comprises a first P type gallium nitride layer and a second P type gallium nitride layer, and the first P type gallium nitride layer and the second P type gallium nitride layer grow by respectively adopting different carrier gases. According to the P type LED epitaxy structure, the growing method and the LED display device, P-GaN of different crystal quality can be obtained, the electron limiting capability of P-GaN is enhanced, hole injection is improved, electron injection is slowed down, the polarization effect is restrained, a current is expanded, the impact to GaN-based LEDs caused by static electricity is relieved, and accordingly the anti-static capability of an epitaxial wafer is improved.

The invention proposes an LED epitaxial wafer and a forming method thereof. The forming method comprises a first step of providing a substrate and forming a buffer layer on the substrate; a second step of forming a semiconductor material layer of a first doping type on the buffer layer; a third step of forming a quantum well structure on the semiconductor material layer of the first doping type; a fourth step of forming an electron blocking layer on the quantum well structure; and a fifth step of forming a semiconductor material layer of a second doping type on the electron blocking layer. The fourth step comprises forming a first AlxGa1-xN layer on the quantum well structure, and forming a second AlxGa1-xN layer on the first AlxGa1-xN layer. In the formation of the first AlxGa1-xN layer, a component x of an Al is gradually changed from a first component value to a component value, and the second component value is larger than the first component value. In the formation of the second AlxGa1-xN layer, a component x of an Al is constant. The LED epitaxial wafer and the forming method thereof can improve the internal quantum efficiency of LED chips, promote the light-emitting efficiency of the epitaxial wafer, and are suitable for the needs of high-power epitaxial wafers.

The invention discloses a nuclear shell nickel-cobalt-manganese ternary sulfide hollow spherical electrode material and a preparation method thereof, and belongs to the technical field of functional material preparation. According to the preparation method, isopropanol and polyhydric alcohols serve as a mixed solvent, and a solid spherical nickel-cobalt-manganese precursor compound is prepared through a solvothermal method; then, through vulcanization reaction, the solid spherical nickel-cobalt-manganese precursor compound is converted into the nuclear shell nickel-cobalt-manganese ternary sulfide hollow spherical material. The nuclear shell nickel-cobalt-manganese ternary sulfide hollow spherical material prepared through the preparation method is regular and uniform in shape and appearance and has large specific surface area, transmission and diffusion of ions and electrons are promoted, the effective contact area of electrolyte and the electrode material is enlarged, and many activesites are provided for electrochemical redox reaction; meanwhile, a nuclear shell hollow structure can effectively relieve volume expansion of the electrode material during charging and discharging,and therefore the electrochemical performance of the material is improved. The nuclear shell nickel-cobalt-manganese ternary sulfide hollow spherical electrode material has good electrochemical energystorage performance when serving as an electrode material to be applied to a supercapacitor.

The invention provides a silicone rubber composite material used for seal rings. The composite material is prepared from the following components in parts by weight: 100 parts of silicone rubber, 0.5-1.5 parts of peroxidation vulcanizing agent, 10-15 parts of fluoroether rubber, 20-30 parts of plaster fibers, 25-35 parts of fillers, 1-3 parts of coupling agent, 0.5-1 part of release agent, 2-3 parts of anti-aging agent, 12-15 parts of plasticizer and 1.5-2 parts of softening agent. The invention also provides a preparation method of the composite material. With good tensile strength and oil resistance, the silicone rubber composite material used for seal rings, which is provided by the invention, can be used on various occasions.

The invention relates to a floating type lithium niobate optical waveguide. A lithium niobate sample is adopted as base material, and operation is carried out according to the following steps of bombarding the lithium niobate sample with a helium ion (He+) beam which is 1 Mev in energy, forming crystal lattice damage in a certain area below the surface of the sample, enabling the parts with the crystal lattice damage to be provided with refractive index smaller than that of undamaged parts, limiting a light beam in a waveguide area to spread, etching round or rectangular holes in the surface of the sample in a focused ion beam etching way, enabling mixed acid solutions to be contacted with the parts with the crystal lattice damage through the holes, further corroding the parts, forming an air interlayer, and forming a floating waveguide structure on the surface of the lithium niobate sample. The lithium niobate optical waveguide plays a good role in limiting optical signals spreading in the lithium niobate optical waveguide, has extremely low transmission loss, and can be widely used for electronic components, optical components and modulation components.

The invention discloses an additional damping limit stop block capable of quantitatively sliding, which is innovated in that the additional damping limit stop block consists of a bottom plate, a limitbaffle plate, a sliding plate, a plurality of damping web plates, a top plate and a rubber pad; a shear bolt can limit the maximum outward sliding amount of the sliding plate; the limit baffle platecan continuously limit the maximum outward sliding amount of the sliding plate after the shear bolt is damaged; the damping web plates can absorb energy in a yield and plastic deformation mode after the sliding plate is contacted with the limit baffle plate so as to play a role in dissipating the energy. The additional damping limit stop block has the advantages that the additional damping limiting stop block capable of quantitatively sliding is provided, the energy absorption effect of the additional damping limiting stop block is good, the effect of limiting the transverse displacement of amain beam is good, the efficiency of a plate-type rubber support is fully utilized, meanwhile, a supporting body can be protected, and repair after earthquake is facilitated.

The invention provides a double-heterojunction gallium nitride based HEMT (High Electron Mobility Transistor) taking aluminum-gallium-nitrogen as a high-resistance layer, comprising a substrate, a nucleating layer, an unintentionally-doped high-resistance layer, an unintentionally-doped high migration rate layer, an aluminum nitride inserting layer, an unintentionally-doped barrier layer and an unintentionally-doped gallium nitride or aluminum-gallium-nitrogen cap layer, wherein the nucleating layer is manufactured above the substrate and is 0.01-0.50 microns in thickness; the unintentionally-doped high-resistance layer is manufactured above the nucleating layer; the unintentionally-doped high migration rate layer is manufactured above the unintentionally-doped barrier layer; the aluminum nitride inserting layer is manufactured above the unintentionally-doped high migration rate layer and is 0.7-5 nm in thickness; the unintentionally-doped barrier layer is manufactured above the aluminum nitride inserting layer; and the unintentionally-doped gallium nitride or aluminum-gallium-nitrogen cap layer is manufactured above the unintentionally-doped barrier layer and is 1-5 nm in thickness. According to the double-heterojunction gallium nitride, the channel electron migration rate and the limiting capability to two-dimensional electronic gas are obviously improved; power leakage of the buffering layer is inhibited; and meanwhile, crystal lattice stress of the barrier layer is reduced, the defect density is reduced, and the stability and the reliability of the work of a device are improved.

The invention relates to building waterproof construction equipment and a construction method thereof. The building waterproof construction equipment comprises a shell, a supporting plate, a moving assembly, an unwinding roller rotationally installed on the inner wall of the shell and a gluing assembly installed in the shell. A laying through hole is formed in the bottom wall of the shell in a penetrating mode, a fixing plate is fixed to the bottom wall of the shell, and a compaction assembly is installed on the fixing plate. The compaction assembly comprises an air cylinder fixed to the fixing plate, a U-shaped plate body fixed to the lower end of a piston rod of the air cylinder and a compaction roller rotationally installed between the two side walls of the U-shaped plate body, and a limiting assembly for preventing the compaction roller from rotating reversely is installed on the U-shaped plate body. According to the building waterproof construction equipment, the limiting assembly plays a good role in limiting reverse rotation of the compaction roller, the resistance of the shell moving in the direction opposite to the waterproof roll laying direction is increased, the probability that the laid waterproof roll tilts due to the fact that the shell is subjected to acting force in the reverse direction is reduced, and the laying quality of the waterproof coiled material and the waterproof effect of a building site are improved.

The invention discloses a hydrophobic aqueous polyurethane ink. The hydrophobic aqueous polyurethane ink comprises the following raw materials in parts by weight: 40-50 parts of a modified aqueous polyurethane emulsion, 15-20 parts of a filler, 18-26 parts of a pigment, 2-3 parts of chitosan, 20-30 parts of dilute acetic acid, 0.5-1 part of a defoaming agent, 0.5-1.5 parts of a dispersing agent, 0.1-0.5 parts of a leveling agent, and 0.1-1 part of a thickener. The invention also discloses a preparation process of the hydrophobic aqueous polyurethane ink. The method adopts the modified aqueouspolyurethane emulsion as a resin matrix, and adds a proper proportion of a filler, a pigment and an auxiliary agent, so that the ink has excellent hydrophobicity, weather resistance, chemical resistance and high temperature resistance; at the same time, a natural antibacterial agent chitosan is added, so that the ink has certain antibacterial property, also has degradability and is more environmentally friendly, the ink has the advantages of low production cost, water and abrasion resistance, good printing effect, environmental protection, and safety, and widens the application range of traditional polyurethane aqueous inks.

A novel reversible ratchet wrench may include a wrench body, a control member, a ratchet member and a rotating member, wherein the control member has a restricting slot and two stopper planes, and a deep hole for placing the spring. The control member is placed into the round hole of the wrench body by the half cylindrical body and connects with the ratchet member which is placed into the arc-shaped ratchet slot, thereby resulting in a secure relative positioning between the control member and the ratchet member. The novel reversible ratchet wrench allows convenient switch between directions of the rotational movement of the wrench body and the structural design effectively prevents the spring from ejecting from the deep hole of the control member or getting stuck by restricting the movement space of the spring. Furthermore, this structural design improves the smoothness of switching operation of the ratchet wrench.