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Semiconductor stack and vertical cavity surface emitting laser

A technology of semiconductors and laminates, applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of low thermal conductivity, high output, carrier density distribution is not considered, and achieve high carrier confinement effect Effect

Active Publication Date: 2013-09-18
RICOH KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is a high possibility that multiple carriers are generated that are susceptible to non-luminescent recombination, since there is no carrier blocking layer between the active layer and the mirror, and the active layer is attached to the Low refractive index layer Al 0.8 Ga 0.2 As, and layers with a high aluminum composition include a lot of oxygen
Also, the structure described in Non-Patent Document 6 has low thermal conductivity because Al 0.8 Ga 0.2 As is used on the low-index layer of the mirror described above, for which higher output cannot be expected due to low thermal conductivity
[0014] Also, in Patent Document 4, although the carrier blocking layer is described, the heights of the barrier walls are all the same, and the carrier density distribution related to photoexcitation is not considered at all

Method used

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  • Semiconductor stack and vertical cavity surface emitting laser
  • Semiconductor stack and vertical cavity surface emitting laser
  • Semiconductor stack and vertical cavity surface emitting laser

Examples

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Effect test

no. 1 example

[0040]A vertical cavity surface emitting laser is a semiconductor laser that has excellent wavelength controllability because its oscillation wavelength is determined by the film thickness of the mirror and the film thickness of the resonator. The emission wavelength is determined by the composition and film thickness control of the quantum well layer in the active layer. Therefore, it is possible to achieve wavelength stability and high efficiency relatively easily.

[0041] However, a relatively thick mirror must be provided between the active layer and the heat-radiating material. Therefore, the vertical cavity surface emitting laser has inferior thermal radiation characteristics compared to the edge emitting type laser, which causes the temperature of the quantum well layer to rise, resulting in characteristic degradation such as reduced output. Therefore, when aiming at high output, the material and film thickness of the configuration mirror should be fully considered. ...

no. 2 example

[0069] Next, a description will be given of a semiconductor laminated board according to a second embodiment. like Figure 5 As shown, the semiconductor laminated board in this embodiment has a structure different from that of the semiconductor laminated board in the first embodiment.

[0070] In this embodiment, in the semiconductor laminated board 10, a gallium arsenide (100) substrate formed at an angle of 15 degrees ((111) direction) is used as the substrate 11 on which 30 pairs of gallium arsenide / aluminum arsenide layers are The semiconductor DBR12 is formed by stacking. A spacer layer 113 is formed of gallium arsenide on the semiconductor DBR12, on which the first carrier blocking layer 131, the first active layer 41, the second carrier blocking layer 132, the second active layer 42, the second The three carrier blocking layers 133, the third active layer 43, and the fourth carrier blocking layer 134 are formed in this order. It should be noted that, in this embodime...

no. 3 example

[0085] (Vertical cavity surface emitting laser device)

[0086] Here, a third embodiment will be described. In the present embodiment, a vertical cavity surface emitting laser device having an oscillation wavelength in the 980 nm range using the semiconductor laminated plate according to the first or second embodiment will be described.

[0087] like Figure 7 As shown, the vertical cavity surface emitting laser device in this embodiment is formed on a type of semiconductor substrate 200, which is an inclined substrate inclined in the plane direction, on which a buffer layer 201, a lower layer semiconductor DBR202, The active layer 205 and the upper semiconductor DBR 207. Also, on top of the upper semiconductor DBR 207, a contact layer 209 is formed. By removing part of the contact layer 209 , an upper semiconductor DBR 207 , an active layer 205 and a convex mesa 220 are formed. A current confinement layer 208 is formed in the upper semiconductor DBR 207, which is oxidized...

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Abstract

A semiconductor stack includes a semiconductor DBR (Distributed Bragg Reflector) formed on a substrate, and a resonator formed on the semiconductor DBR laminating wide-band semiconductor layers and active layers alternately. Each of the active layers includes MQWs (Multiple Quantum Wells) and two spacer layers formed one on each surface of the MQWs. The MQWs are formed by laminating barrier layers and quantum well layers alternately. There are n layers of the wide-band semiconductor layer formed, and a band gap Eg m of an m-th wide-band semiconductor layer counting from the substrate and a band gap Eg m-1 of an m-1-th wide-band semiconductor layer counting from the substrate satisfy Eg m-1 <Eg m where n and m are integers greater than or equal to 2, and 1<m <=n.

Description

field of invention [0001] Herein, the present invention mainly relates to a semiconductor laminate and a vertical cavity surface emitting laser. Background technique [0002] Solid-state lasers such as Nd:GdVO4, Nd:YAG, etc. have limited wavelengths, while semiconductor lasers can emit lasers with different wavelengths, because it is relatively easy to adjust the composition of active materials. Therefore, this is expected to be applied in fields requiring high-output lasers. In particular, a vertical-cavity surface-emitting laser (VCSEL) has the superior characteristic of wavelength controllability not affected by mode hopping. [0003] Such a semiconductor laser can emit light of a predetermined wavelength at a specific energy gap by current injection into the active layer or photoexcited carrier injection. In order to effectively implement carrier injection, a quantum well active layer is widely used in the active layer structure. And, to obtain high throughput, a mult...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/343
CPCH01S5/041H01S5/14H01S5/18358H01S5/18383H01S5/3202H01S5/2009H01S5/3406H01S5/3407H01S5/34313H01S5/34373H01S5/343H01S5/34326H01S5/3434
Inventor 原敬
Owner RICOH KK
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