399results about How to "Short wavelength" patented technology

The present invention is an industrial waste water microwave electrodeless ultraviolet photocatalysis-dual membrane separation coupling treatment device, the device mainly consists of a reactor (1), a membrane separation system (2), a microwave electrodeless ultraviolet light source system (4), an aeration system, and an ozone tail gas decomposition device (7) connected to the reactor, and an inlet and outlet water system, wherein: the upper and lower parts of the reactor are respectively the reaction zone and the aeration zone, which are separated by a water distribution plate (5); the membrane separation system The microwave electrodeless ultraviolet light source system is located in the reaction zone and is separated by a corrugated partition (3); the aeration system is composed of a microporous aeration head (6) and a blower (8), and the microporous aeration head is located in the aeration At the bottom of the zone, the blower sends air to the aeration zone through the air duct. The invention has the characteristics of high reaction rate, complete degradation of organic matter, long-term operation and the like, and has strong operability and high safety. It is suitable for the treatment of refractory organic industrial wastewater, and it is also suitable for sterilization and disinfection in the field of water supply.

A method for machining a transparent material by the non-linear absorption of pulsed laser radiation, in the region of a laser focus, includes the following steps: a laser wavelength of between 300 and 1000 μm is selected; and laser impulses having a temporally flat beam profile are applied. The method is characterized in that the irradiation intensity is selected from an interval pre-determined for the material to be machined, in which plasma is formed without plasma luminescence. An apparatus for laser treating a transparent material includes structure to set an irradiance and inspect the treatment as being within a defined interval.

A lighting device comprising one or more solid state light emitters which emit near ultraviolet light or ultraviolet light, one or more other emitters which emit light in the range of 480 nm to about 490 nm and one or more other emitters which emit light in the range of 580 nm to about 590 nm, to make a mixture which in the absence of any other light would have a combined illumination which is within twenty MacAdam ellipses of at least one point on the blackbody locus on a 1931 CIE Chromaticity Diagram. One or more of the other emitters is a lumiphor. One or more of the other emitters can be a solid state light emitter. Also, packaged solid state light emitters and methods of lighting.

CD-GISAXS achieves reduced measurement times by increasing throughput using longer wavelength radiation (˜12×, for example) such as x-rays in reflective geometry to increase both the collimation acceptance angle of the incident beams and the scattering signal strength, resulting in a substantial combined throughput gain. This wavelength selection and geometry can result in a dramatic reduction in measurement time. Furthermore, the capabilities of the CD-GISAXS can be extended to meet many of the metrology needs of future generations of semiconductor manufacturing and nanostructure characterization, for example.

A structure of multi-wavelength light emitting device comprises multi-stacked active layer structure. Each stacked layer comprises lower energy bandgap well 4 and higher energy bandgap barrier layer 3 wherein at least one stacked layer in the device contains nanoparticles. As a result, the emitting wavelengths of the multi-stacked active layer structure consist parts (or all) of the emitting wavelengths come from the stack layers containing nanoparticles, and parts (or all) of the emitting wavelengths come from the stack layers not containing nanoparticles. In another embodiment, parts (or all) of the emitting wavelengths of the multi-stacked active layer structure can be also used to trigger one or more phosphorescences from the phosphors, thus the emitting wavelengths of such a phosphors converted light emitting device may come partially from the multi-stacked active layer itself and partially (or all) from the phosphors.

Patterns with feature sizes of less than 50 microns are rapidly formed directly in semiconductors, particularly silicon, GaAs, indium phosphide, or single crystalline sapphire, using ultraviolet laser ablation. These patterns include very high aspect ratio cylindrical through-hole openings for integrated circuit connections; singulation of processed die contained on semiconductor wafers; and microtab cutting to separate microcircuit workpieces from a parent semiconductor wafer. Laser output pulses (32) from a diode-pumped, Q-switched frequency-tripled Nd:YAG, Nd:YVO₄, or Nd:YLF is directed to the workpiece (12) with high speed precision using a compound beam positioner. The optical system produces a Gaussian spot size, or top hat beam profile, of about 10 microns. The pulse energy used for high-speed ablative processing of semiconductors using this focused spot size is greater than 200 μJ per pulse at pulse repetition frequencies greater than 5 kHz and preferably above 15 kHz. The laser pulsewidth measured at the full width half-maximum points is preferably less than 80 ns.

A system and method are provided for preventing damage to the epidermis or other epithelial or non-target tissue during photodynamic therapy treatment. For example, an inhibiting radiation can be used to control formation of a photosensitizer from a precursor photosensitizer in the epidermis or epithelial tissue. Subsequent application of a treatment radiation can activate the photosensitizer to damage or destroy target sites while the non-target tissue remains substantially unaffected.

Several methods are disclosed for the generation of coherent short-wavelength electromagnetic radiation through optical nonlinear frequency mixing means. The invention involves several stages of efficient nonlinear frequency conversion to shift the output of high-power infra-red fiber-lasers into the vacuum ultraviolet (VUV). The described laser source architecture is designed around non-critically phase-matched (NCPM) sum-frequency mixing (SFM) interactions in the nonlinear crystal CLBO. The NCPM interaction is an optimum condition for bulk frequency conversion of cw radiation because it allows tight focusing of the input laser radiation without Poynting vector walk-off, thereby increasing the non-linear drive significantly. The sub-200-nm output wave is generated from SFM of a long-wave IR laser field and a short-wave UV laser field. The long-wave laser beam may be derived directly from a rare-earth-doped fiber laser, whereas the short-wavelength UV beam is provided as the fourth frequency harmonic of a second rare-earth-doped fiber laser system.

The invention relates to a corrugated web plate H-shaped profile steel composite bean, belonging to the technical field of building profile materials . The cross section port type comprises a corrugated web plate and an upper and lower flange joints. The upper flange is in parallel with the lower flange; the web plate is vertical to the upper flange and the lower flange; the web plate is connected with the flanges by single-sided fillet weld; the web plate is a trapezoid ripple or a sine curve ripple, wherein the lengthwise direction of the trapezoid ripple is repeated periodically. The upper part of a composite beam is a reinforced concrete swing plate and a profiled steel sheet. The upper flange, the reinforced concrete plate and the profiled steel sheet are connected by a plurality of studs; the reinforced concrete swing plate can be connected with the profiled steel sheet by additional lateral steel bar. The traditional hot-rolling joist steel and H-shaped profile steel composite beam can be replaced by the corrugated web plate H-shaped profile steel composite bean which has the wider application than joist steel and H-shaped profile steel composite beam; the maximization can be realized for special field and special location comprising the construction of large span industrial and civil building and large span bridge.

A system and method for patterned exposure of a photoactive medium is described wherein a pulsed optical beam with a high peak-power is stretched in the time domain to reduce the peak power while maintaining the average power. The stretched pulse illuminated a pattern, such as a transparent or reflective photolithography mask. The pattern is then imaged onto the photoactive medium after recompressing the beam. This arrangement prevents damage to the mask by the high peak power of the pulsed optical beam.

A laser light source device 1, comprising M number of laser light sources, of which frequency is shifted from a fundamental frequency by (m−1)·a·Δω, a first laser light source section 2 and a first fiber amplifier section 4 for amplifying these laser lights, a first optical multiplexer 6 for approximately coaxially superimposing the laser lights emitted from the first fiber amplifier section 4 and emitting the laser lights, a first wavelength conversion device 9 for multiplying the frequency of the laser lights emitted from the first optical multiplexer 6 by A, M number of laser light sources, of which frequency is shifted from the fundamental frequency by (m−1)·b·Δω, a second laser light source section 3 and a second fiber amplifier section 5 for amplifying these laser lights, a second optical multiplexer 7 for approximately coaxially superimposing the laser lights emitted from the second fiber amplifier section 5 and emitting the laser lights, a second wavelength conversion device 10 for multiplying the frequency of the laser lights emitted from the second optical multiplexer 7 by B, and a third wavelength conversion device 11 for simultaneously receiving the laser lights emitted from the first and second wavelength conversion devices 9 and 10 and converting the laser lights into laser lights, of which frequency is (A+B) times the fundamental frequency, the laser light source device 1 being characterized in that the expression A·a+B·b=0 is satisfied.

A highly reliable light-emitting element which can keep favorable characteristics throughout long-time driving is provided. In addition, a light-emitting element with high color purity and high emission efficiency is provided. Furthermore, a light-emitting device having a long lifetime in which the light-emitting element is used is provided. Moreover, an electronic device and a lighting device each of which has a long lifetime are provided. In the light-emitting element including an EL layer between a pair of electrodes, the EL layer has a stacked-layer structure of a first light-emitting layer, a second light-emitting layer, and a third light-emitting layer. The light-emitting layer includes an electron-transport material, a hole-transport material, and a light-emitting material. Furthermore, light emitted from the first light-emitting layer and light emitted from the third light-emitting layer have the same color and each have a longer wavelength than light emitted from the second light-emitting layer.

Disclosed herein is a wireless transmission system. Transmission antennas are provided on a first communication apparatus while reception antennas individually corresponding to the transmission antennas are provided on a corresponding second communication apparatus. Each reception antenna receives a desired wave from a corresponding transmission antenna as a direct wave and receives an unnecessary wave from a different transmission antenna as a direct wave. The first communication apparatus modulates only the amplitude of a carrier signal for all channels. The second communication apparatus demodulates composite waves of desired waves and unnecessary waves received by the reception antennas by envelope detection or square-law detection and carries out correction operation for the demodulation signals based on transmission characteristics of transmission spaces between the transmission and reception antennas to acquire transmission subject signals.

The invention discloses a laser barcode reading device and a barcode reading method. The reading device comprises a blue light laser, a deflecting mirror, a swingable reflecting mirror, an optical collector, a light filter, a photoelectric receiver, an amplification processing circuit, a processor connected with the amplification processing circuit and controlling the blue light laser, and a power module. The reading method comprises the following steps of: receiving scanning optical signals; performing analog digital conversion and acquisition of the scanning optical signals; performing fast Fourier transform; removing high-frequency component; performing fourier inversion; calculating a threshold by using an Otsu method; performing binaryzation on barcode signals according to the threshold; and decoding according to various barcode standards. The laser barcode reading device has the advantages of reasonable design, simple and convenient operation, low input cost and good using effect and adopts the brand-new blue laser scanning source to scan one-dimensional barcodes; and the invention also provides a barcode reading method with high recognition performance, strong resolution and high recognition precision so as to simplify an electronic hardware part of the barcode reading device.

The invention relates to a display device including a luminous element and a light guide which has coupling locations and decoupling locations and transports a light signal that is emitted by the luminous element. The inventive luminous element has a radiation characteristic, the solid angle of which can be controlled.

A piston having a head includes a circumferential compression ring groove having a top surface, a bottom surface and an inset rear wall extending between the top surface and the bottom surface, wherein a confined area of the compression ring groove is hardened.

A snowmobile has a four-stroke engine mounted in an engine cradle and an exhaust system connected to the engine. The exhaust system includes a generally U-shaped exhaust pipe extending forwardly from the engine to a first point disposed forwardly of the engine cradle, and of suspension assemblies of the skis, and extending rearwardly from the first point to a second point disposed rearwardly of a front of the engine cradle.

A fluorophor comprising, as a main component, an α-type sialon crystal which contains at least an A element (wherein A represents one or more elements selected from among Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Er, Tm and Yb), an M element (wherein M represents one or more elements selected from among Li, Na, Mg, Ca, Y, La, Gd and Lu), Si, Al, oxygen and nitrogen, and is represented by the general formulae: (M_x, A_y)(Si_12−(m+n)Al_m+n)(O_nN_16−n) (1) m=δ_M×x+δ_A×y (2) 0.2≦x≦2.4 (3) 0.001≦y≦0.4 (4) and 0.5×m<n≦4 (5). The fluorophor is reduced in the lowering of brightness, and is useful for a white color LED and the like.

As an electrode area of a plasma CVD apparatus is enlarged, influence of the surface standing wave remarkably appears, and there is a problem in that in-plane uniformity of quality and a thickness of a thin film formed over a glass substrate is degraded. Two or more high-frequency electric powers with different frequencies are supplied to an electrode for producing glow discharge plasma in a reaction chamber. With glow discharge plasma produced by supplying the high-frequency electric powers with different frequencies, a semiconductor thin film or an insulating thin film is formed. High-frequency electric powers with different frequencies (different wavelengths), which are superimposed on each other, are applied to an electrode in a plasma CVD apparatus, so that increase in plasma density and uniformity for preventing effect of surface standing wave of plasma are attained.

A Thulium laser (15) is used to directly drive a ZnGeP₂ optical parametric oscillator (30) with a nominal 2 μm output to generate the 3-5 micron wavelengths. In one embodiment, the ZGP OPO is configured as a linear resonator and in another embodiment the ZGP OPO is configured as a ring resonator. The ring resonator prevents optical feedback to the Thulium laser (15) and eliminates the need for an optical isolator (24). Moreover, the Thulium laser pump (15) is implemented as a Tm:YAlO₃ laser in which YAlO is the host for the Thulium YAlO is particularly beneficial as it is a mechanically hard optical material allowing high thermal loading without fracture as well as natural birefringence that can minimize thermal birefringence losses. A longer wavelength transition at 1.99 microns is selected to minimize nonlinear crystal loss. More particularly, a high power, high efficiency Tm:YAlO₃ laser repetitively Q-switched at 10 kHz is used to drive a ZnGeP₂ OPO. The system is run with room temperature components and achieves over 3 W at 3-5 microns with an efficiency of 5% starting from the pump diode. A two crystal resonator (40, 42) design allows tuning over multiple spectral peaks or alternately as an ultra broad spectral source.