84results about How to "High lumen efficiency" patented technology

A collimating sheet, for use with a backlit display and the like, that includes a substrate, a plurality of microlenses on the output side of the substrate, a specularly reflective layer on the side of the substrate opposite the microlenses, and a plurality of apertures in the reflective layer in direct correspondence to the microlenses of the lens array. The specularly reflective layer can be relatively thinner than a diffuse reflective layer, which allows light to pass through the more readily. One or more layers of dielectric can be placed on top of one or more reflective material layers to further improves overall reflectivity. Apertures are preferably made in the light-absorptive and reflective layers with a laser ablation process wherein laser light illuminates the output side of the film. The laser light is brought to a focus by the lenslets of the lens array onto the light-absorptive layer, which then ablates a hole or aperture into the light-absorptive and reflective layer. In this way, the apertures are self-aligned with the lenslets.

A collimating sheet, for use with a backlit display and the like, that includes a substrate, a plurality of microlenses on the output side of the substrate, a specularly reflective layer on the side of the substrate opposite the microlenses, and a plurality of apertures in the reflective layer in direct correspondence to the microlenses of the lens array. The specularly reflective layer can be relatively thinner than a diffuse reflective layer, which allows light to pass through the more readily. One or more layers of dielectric can be placed on top of one or more reflective material layers to further improves overall reflectivity. Apertures are preferably made in the light-absorptive and reflective layers with a laser ablation process wherein laser light illuminates the output side of the film. The laser light is brought to a focus by the lenslets of the lens array onto the light-absorptive layer, which then ablates a hole or aperture into the light-absorptive and reflective layer. In this way, the apertures are self-aligned with the lenslets.

The related GaN-base LED epitaxial sheet comprises: from bottom to top, a substrate, a n-type layer, a quantum trap, a limit layer, a buffer layer, and a p-type layer as GaP layer with hole concentration as 2*1018~6*1018cm-3. This invention can reduce p-type layer resistance, overcomes the defects of small GaP forbidden band and limit effect, and improves the GaN-base LED performance obviously.

A phosphor for short-wave semiconductor LEDs to create white radiation that comes from the lumen of the phosphor and the blue radiation of the heterojunction absorbed by the phosphor. The phosphor is prepared from a YAG-based substrate and added with N−3 and F−1, having the chemical formula of (ΣLn)3Al5O12-δN−3δ / 2F−1δ / 2, in which ΣLn=Y1-x-y-zGdxLuyCez. The phosphor has high lumen brightness and the characteristics of high stability of light chromaticity and high durability.

The related GaN-base LED epitaxial sheet comprises: from bottom to top, a substrate, a n-type layer, a quantum trap, a low-temperature buffer layer, and a p-type layer as GaP layer with hole concentration as 2*1018~6*1018cm-3. This invention can reduce p-type layer resistance, and improves LED performance greatly.

The invention provides a high-reflectivity light-emitting diode chip with a vertical structure. The chip has a single-electrode structure, comprises a distributed Bragg reflector (DBR), an ohmic contact layer and a low-thermal resistance radiating substrate, greatly improves luminous efficiency, and improves the radiating capacity of devices. The preparation method comprises the following steps of: growing an epitaxial layer on a substrate, wherein the epitaxial layer comprises a buffer layer, an N-type layer, a multi-quantum well layer and a P-type layer; manufacturing graphics of the P-type layer; manufacturing the reflector and the ohmic contact layer; manufacturing a bonding layer of the radiating substrate; bonding the radiating substrate to the P-type layer; removing a sapphire substrate; manufacturing an N electrode; thinning the substrate; evaporating a metal layer to form a P electrode; and testing, scribing and sorting wafers. The chip manufactured by the method can effectively increase light output, improve the radiating capacity of the chip, provide stable light output power, and realize the application of high luminous efficiency.

The invention discloses a near-UV excited single matrix white phosphor and its preparation method. Bi<3+> ion is initiatively used as a blue light activator. Bi<3+> is doped into a matrix to emit blue light in near-UV light. A matrix Ca2Y3Sb3O14 is simultaneously doped with Bi<3+> and Eu<3+>. Under near-UV excitation, blue light emitted from Bi<3+> and orange light emitted from Eu<3+> are combined to obtain white light. The near-UV excited single matrix white phosphor is prepared at a non-reducing atmosphere by a high-temperature solid phase method. The main method comprises the following steps: weighing raw materials according to stoichiometric ratio of chemical composition of the phosphor, adding a cosolvent, mixing, fully grinding, calcining at high temperature of 1300-1500 DEG C for 3-8 h; cooling the above product to room temperature, and grinding to obtain the white phosphor. A white-light LED device is obtained by coating a near-UV LED chip with the phosphor. The white light has stable color development. Color reductibility is good. The technology is simple and has high luminous efficiency.

The present invention is organic electrofluorescent iridium complex material in the structure as shown and with radical possessing great steric hindrance introduced to the ligand. The organic electrofluorescent iridium complex material has reduced influence on the light emitting efficiency of device caused by phosphorescence quenching and phosphorescence life one time lowered than available similar material.

The invention discloses a GaN-base double-blue-light wavelength luminescent device and a preparation method thereof, aiming to solve the problem that the color rendering properties of a white-light LED (Light-emitting Diode) which is packaged by stimulating yellow-light fluorescent powder through a single-blue-light chip are not good. The structure of a GaN-base double-blue-light wavelength LED epitaxial wafer is sequentially composed of following members from a substrate: a GaN buffer layer, a GaN intrinsic layer, an n-GaN layer, an asymmetrical n-AlGaN layer, a high In component quantum well, a low In component quantum well and a p-GaN layer. The structure is characterized by leading the asymmetrical n-AlGaN layer between a mixed multi- quantum-well active layer and the n-GaN layer, removing a p-AlGaN electron barrier layer at the side of the p-GaN layer at the same time, and then packaging the double-blue-light wavelength chip and the yellow-light fluorescent powder to form the white-light LED.

The invention relates to a polycyclic aromatic hydrocarbon derivative containing a naphthyridine group, and the derivative has a structure as shown in formula (1). The polycyclic aromatic hydrocarbon derivative containing the naphthyridine group is suitable for being used as an ETL material in an electroluminescent display. The derivative is used, so that working voltage of an organic light-emitting device can be effectively reduced, and light emitting efficiency of the organic light-emitting device is improved.

The invention relates to phenazine derivatives. The phenazine derivatives have structures shown in the formula (1). The phenazine derivatives are suitable to use as an ETL material in an electro-luminescent display. The phenazine derivatives can effectively reduce the operating voltage of the organic electroluminescent device and improve the luminous efficiency of the organic electroluminescent device.

The invention relates to a chrysene derivative containing a quinazoline group. The structure of the chrysene derivative is shown in the formula (1). The chrysene derivative containing the quinazoline group is suitable for serving as an ETL material in an electroluminescent display. By means of the usage of the chrysene derivative containing the quinazoline group, the operating voltage of an organic electroluminescence device can be effectively reduced, and the luminous efficiency of the organic electroluminescence device is improved.

An organic light emitting device comprises an anode substrate, a hole injection layer, a first hole transport layer, a first light emitting layer, a first electron transport layer, a charge generation layer, a second hole transport layer, a second light emitting layer, a second electron transport layer, an electron injection layer and a cathode layer which are sequentially stacked. The charge generation layer comprises a transport layer, an n-type doped layer and a P-type doped layer which are sequentially stacked. The transport layer is stacked on the first electron transport layer, and is made of a first electron transport material. Materials of the n-type doped layer include a second electron transport material and cesium salt doped in the second electron transport material, and the mass ratio of cesium salt to the second electron transport material is 0.1-0.4:1. Materials of the p-type doped layer include a hole injection material and a p-type doping agent doped in the hole injection material. The organic light emitting device has high luminous efficiency. In addition, the invention relates to a preparation method of the organic light emitting device.

The present invention relates to a lighting device (10). The device comprises a light guide plate (12), and at least one array (14) of light emitting diodes (LEDs) (16), which LEDs are accommodated in holes (20) arranged in the light guide plate. The device is characterized by an array (24) of lenses (26) arranged such that light emitted by the LEDs passing the lens array is at least partly directed towards areas (28) of the light guide plate free from holes.

An organic light-emitting diode device comprises a glass substrate, a hole injection layer, a hole transmission layer, a green light-emitting layer, an electron transmission layer, an electron injection layer and a cathode layer which are sequentially stacked, wherein the cathode layer comprises a metal layer, a metal oxide mixed layer, a metal doped layer and a transparent conductive layer which are sequentially stacked. The metal layer is stacked on the electron injection layer and made from aluminum, nickel, gold or silver, the metal oxide mixed layer is made from a mixture formed by mixing, by same mass, two of neodymium pentoxide, vanadium pentoxide and tantalum pentoxide, the metal doped layer is made from silver doped magnesium or lithium doped aluminum, and the transparent conductive layer is made from an indium-tin oxide, an aluminum-zinc oxide or an indium-zinc oxide. The organic light-emitting diode device has high luminous efficiency. In addition, the invention further relates to a manufacturing method of the organic light-emitting diode device.

An organic light-emitting diode device comprises a glass substrate, a hole injection layer, a hole transmission layer, a green light-emitting layer, an electron transmission layer, an electron injection layer and a cathode layer which are sequentially stacked, wherein the cathode layer comprises a metal layer, a metal oxide mixed layer and a doped layer which are sequentially stacked. The metal layer is stacked on the electron injection layer and made from aluminum, nickel, gold or silver, the metal oxide mixed layer is made from a mixture formed by mixing, by same mass, at least two of neodymium pentoxide, vanadium pentoxide and tantalum pentoxide, materials of the doped layer include a conductive material and a metal doped material doped in the conductive material, the conductive material is made from an indium-tin oxide, an aluminum-zinc oxide or an indium-zinc oxide, and the metal doped material is made from silver doped magnesium or lithium doped aluminum. The organic light-emitting diode device has high luminous efficiency. In addition, the invention further relates to a manufacturing method of the organic light-emitting diode device.

The invention relates to a phenazine group-substituted polycyclic aromatic hydrocarbon derivative, which has a structure shown in a formula (I). The phenazine group-substituted polycyclic aromatic hydrocarbon derivative is suitable for an electroluminescent display as an ETL material. The usage of the material reduces the turn-on voltage of the electroluminescent display, increases the luminescence efficiency of the device, and increases the usage life of the device.

The invention provides Mn<4+> activated double perovskite red fluorescent powder for white LED (Light-Emitting Diode) and a preparation method. The chemical formula of the red fluorescent powder is Y2MgTi1-xO6:xMn<4+>, wherein x is the doping concentration of an activator Mn<4+>, and is larger than or equal 0.0005 and is less than or equal to 0.02. The method is characterized in that: a sol-gel method is used for synthesizing, raw materials are selected from soluble yttrium-containing compound, magnesium-containing compound, manganese-containing compound, tetrabutyl titanate, ethanol or ethylene glycol and citric acid. The preparation method is characterized in that quadrivalent magnesium ions are taken as activator, yttrium magnesium titanate being of a double-perovskite structure is taken as a substrate material for preparing red fluorescent powder Y2MgTi1-xO6:xMn<4+> (x is larger than or equal to 0.0005 and is less than or equal to 0.02); the emitted red light is stable in light, and has the high luminous efficiency and superior wet resistance thermal resistance.

Belonging to the technical field of photoelectric material applied science and technology, the invention in particular relates to a triarylamine derivative, a preparation method and application thereof. The triarylamine derivative provided by the invention adopts triarylamine and fluorenocarbazole as the basic structural unit, and after modification, an asymmetric structure can be obtained so as to compose compounds rich in holes and with high glass transition temperature. When the compounds are used as a hole transport material, compared with the commonly used hole transport material like N,N'-diphenyl-N, N'-bis(3-methylphenyl)-1, 1'-biphenyl-4, 4'-diamine (TPD) in the prior art, the hole transport ability is significantly improved, in OLEDs, the series of compounds have significantly improved starting voltage and glass transition temperature compared with the traditional hole transport materials, and are ideal hole transport materials. In addition, when the series of compounds are used as a light-emitting layer, the efficiency of OLEDs is greatly improved, and the series of compounds are ideal light-emitting layer materials.

The invention relates to a light-emitting device (1) comprising: a light source (2) for emitting light of a first wavelength range; a light guide (3) having a light receiving surface (4) for receiving at least part of said light emitted by the light source (2), a front surface (31) and a rear surface (32), for guiding light of said first wavelength range by total internal reflection at said front surface and said rear surface; a plurality of outcoupling elements (5) for outcoupling light from the light guide such that at least part of the light that is outcoupled by the outcoupling elements exits the light guide through said rear surface; a reflective member (6) arranged in rear of said light guide to reflect light that is outcoupled from the light guide; and a wavelength converting member (8) comprising a wavelength converting material arranged outside the light guide to convert light of said first wavelength range to light of a second wavelength range. Advantageously, in the light-emitting device according to the invention, the color, color temperature and / or color rendering index may be tuned by modifying the wavelength converting member. As a result, white light which is perceived as warm may be obtained.

The invention relates to a polycyclic aromatic hydrocarbon derivative comprising a quinoxaline group. The compound has the structure represented as the formula (I). The polycyclic aromatic hydrocarbon derivative is suitable for being used as an ETL material in electroluminescence displayers. The compound can effectively reduce operating voltage of an organic light-emitting device, and can improve the luminous efficiency of the organic light-emitting device.

The invention discloses a method for obtaining a formamidinium bromide / PMMA composite material through in-situ polymerization cladding and application thereof. The method comprises the steps that firstly, the thermal injection technology is adopted for synthesizing and obtaining high-quality formamidinium bromide quantum dots, and acetonitrile and methylbenzene are used for purifying the quantum dots; secondly, the quantum dots and an MMA solution are mixed according to a certain proportion, under the illumination condition, a reaction is performed for a period of time for polymerization, anda fluid product with the certain viscosity is obtained; finally, a film scraping method is used for preparing a uniform green fluorescent film. The formamidinium bromide / PMMA composite material can beused for constructing a white light LED. The water and oxygen resistant formamidinium bromide quantum dot composite film material can be manufactured, and the efficient white light LED device can beobtained.

The invention relates to a manganese doped composite aluminate red luminescent material as well as a preparation method and a purpose thereof. The chemical general formula of the manganese doped composite aluminate red luminescent material is M4Al14O25:xMn<4+>, wherein M is one or a combination of several of Mg, Ca, Sr, Ba, Cu and Zn; x is a mole fraction, being equal to 0 to 2.00 percent. The manganese doped composite aluminate red luminescent material has high thermal stability, is suitable for ultraviolet light or blue light chip excitation and is hopeful to be used as a red luminescent material to be applied to white light LEDs of an ultraviolet chip for excitation trichromatic luminescent material; wide application potentiality is realized in the fields of solid state lighting, display and the like.

The invention discloses a novel electrophosphorescent material and a synthesis method thereof. The electrophosphorescent material has an organic metal complex with an L2IrX form, and the structure is shown as the following formula, wherein L and X are different bidentate ligands, and L is a type of julolidine derivatives and a first ligand; X is a type of diketone compounds and a second ligand, and Ir is a trivalent Iridium metal ion. When the material is applied to electroluminescent devices, the material has good device efficiency and great application prospect. When the brightness of the best device is 100cd / m<2>, the external quantum efficiency is 7.3%, and the lumen efficiency is 24lm / w.

The invention provides near-UV excitation blue light fluorescent powder used fro a white light LED and a preparation method thereof. The chemical formula of the blue light fluorescent powder is Ca4-xZrGe3O12:xBi3+, wherein 0.01<=x<=0.4. The method includes the concrete steps that a calcium-containing compound, a zirconium-containing compound, a bismuth-containing compound and a germanium-containing compound are mixed with a cosolvent boron-containing compound to be calcined for 3-8 hours at the temperature of 1300-1400 DEG C and cooled to obtain the fluorescent powder. Non-rare earth ions are adopted as an activator, germinate without rare earth elements is adopted as a substrate material, and the activator and the substrate material are synergistically cooperated to obtain the blue light fluorescent powder Ca4-xZrGe3O12:xBi3+ (0.01<=x<=0.04). Emitted blue light is stable in color development, luminous efficiency is high, no rare earth elements are contained, and the high cost of the blue light fluorescent powder is lowered.

The related GaN-base LED epitaxial sheet comprises: from bottom to top, a substrate, a n-type layer, a quantum trap, a limit layer, a buffer layer, and a p-type layer as GaP layer with hole concentration as 2*1018~6*1018cm-3. This invention can reduce p-type layer resistance, overcomes the defects of small GaP forbidden band and limit effect, and improves the GaN-base LED performance obviously.

The invention discloses a fluorescent powder glue coating method and application thereof, and belongs to the field of LED packaging. Before fluorescent powder glue coating, a substrate is heated to a temperature at which fluorescent powder glue can solidify, wherein the temperature range is 100 to 175 DEG C, 175 to 250 DEG C or 100 to 250 DEG C; then the fluorescent powder glue is coated to ensure that coating and solidifying of the fluorescent powder glue are fulfilled synchronously, that is, the fluorescent powder glue is coated efficiently. Through temperature adjustment of the substrate, the fluorescent powder glue can have a high-curvature ball-cap geometric appearance which cannot be formed according to the conventional free glue dispensing manner. As coating and solidifying are fulfilled synchronously, repeated and layered coating can be realized, and the method provided by the invention can be used for preparing a multi-layer appearance of the fluorescent powder glue. The method provided by the invention is simple to operate and low in cost, can greatly prevent fluorescent powder precipitation during white-light LED packaging, can obtain a high-curvature and multi-layer geometric appearance of the fluorescent powder glue, and can improve the space color uniformity and optical consistency of an LED product.

The invention discloses a light-emitting diode, an electronic device and a fabrication method, which solve the problem of the prior art that the luminous efficiency of the LED (light-emitting diode) is still low. A first conduction type semiconductor layer, a multi-quantum well structure and a second conduction type semiconductor layer are sequentially arranged on a substrate of the light-emitting diode, wherein a plurality of nanoparticle sets which are spaced from one another are embedded at a position in the second conduction type semiconductor layer, which is close to the multi-quantum well structure, each nanoparticle set is provided with a dielectric outer surface layer and a metal nanoparticle core wrapped by the outer surface layer, and second conduction type semiconductor materials are filled in the gaps between the nanoparticle sets. Since the nanoparticle sets in the metal core-dielectric shell (core-shell) form are inserted adjacent to the multi-quantum well (MQW) structure, leakage or non-radiation loss is prevented, the IQE (internal quantum efficiency) is increased, and thereby the luminous efficiency of the LED is increased.

The invention relates to an antireflection film for a quantum dot enhancement film (QDEF) and a preparation method of the antireflection film. The QDEF is provided with a barrier layer, a quantum dot layer, another barrier layer and the antireflection film in sequence from top to bottom, wherein the antireflection film is formed by film coating through the electron beam evaporation method, the magnetron sputtering method and the like. A layer of the antireflection film is added on the in-light surface of the QDEF, thus the optical incident efficiency of the QDEF is improved, optical loss of a liquid crystal display (LCD) caused by the introduction of the QDEF is reduced, and the lumen efficiency is improved.