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High-reflectivity light-emitting diode chip with vertical structure and preparation method thereof

A technology of light emitting diodes and high reflectivity, applied in the field of chips, can solve the problems of unsatisfactory improvement of light extraction efficiency, and the light extraction efficiency of devices has not been significantly improved, and achieves the effects of increasing light reflection efficiency, reducing loss and high lumen efficiency.

Inactive Publication Date: 2011-06-22
HC SEMITEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reason is that silver (Ag) is easily oxidized, and the reflection effect of silver oxide (AgO) is only 70% of that of silver (Ag) for light with a wavelength of 460nm. It has been significantly improved, and the final light extraction efficiency is not ideal.

Method used

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  • High-reflectivity light-emitting diode chip with vertical structure and preparation method thereof
  • High-reflectivity light-emitting diode chip with vertical structure and preparation method thereof
  • High-reflectivity light-emitting diode chip with vertical structure and preparation method thereof

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Embodiment Construction

[0012] The preparation method of the light-emitting diode chip with the vertical structure in the embodiment of the present invention is as follows:

[0013] 1. Epitaxial growth on the substrate 1, sequentially growing buffer layer 2, N-type layer 3, multi-quantum well layer 4, and P-type layer 5;

[0014] 2. Through photolithography, dry etching until the sapphire substrate (etching depth is about 7um);

[0015] 3. Deposit a passivation layer (silicon dioxide) to protect the etched sidewall;

[0016] 4. Evaporation of DBR reflective layer 6

[0017] 5. DBR layer photolithography, corrosion (form 30 small holes with a diameter of 3-5um), vapor deposition of ohmic contact layer 7 (Ni / Ag / Ti / Au);

[0018] 6. Vapor-deposit a binding metal layer 9 (TiAlTiAu) on the heat dissipation substrate 8;

[0019] 7. Binding substrate and LED wafer;

[0020] 8. Combining chemical mechanical polishing and dry etching to remove the sapphire substrate and expose the N-type layer;

[002...

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Abstract

The invention provides a high-reflectivity light-emitting diode chip with a vertical structure. The chip has a single-electrode structure, comprises a distributed Bragg reflector (DBR), an ohmic contact layer and a low-thermal resistance radiating substrate, greatly improves luminous efficiency, and improves the radiating capacity of devices. The preparation method comprises the following steps of: growing an epitaxial layer on a substrate, wherein the epitaxial layer comprises a buffer layer, an N-type layer, a multi-quantum well layer and a P-type layer; manufacturing graphics of the P-type layer; manufacturing the reflector and the ohmic contact layer; manufacturing a bonding layer of the radiating substrate; bonding the radiating substrate to the P-type layer; removing a sapphire substrate; manufacturing an N electrode; thinning the substrate; evaporating a metal layer to form a P electrode; and testing, scribing and sorting wafers. The chip manufactured by the method can effectively increase light output, improve the radiating capacity of the chip, provide stable light output power, and realize the application of high luminous efficiency.

Description

technical field [0001] The invention relates to a chip, especially a high-reflectivity vertical structure light-emitting diode chip and a preparation method thereof. Background technique [0002] Light-emitting diode is a high-efficiency semiconductor light-emitting device that converts electrical energy into light energy. It is one of the most promising light sources in the 21st century. Light-emitting diodes generally emit light through the carrier intrinsic transition of direct bandgap semiconductors, and have extremely high photoelectric conversion efficiency, that is, high internal quantum efficiency. At present, the internal quantum efficiency of blue light chips can reach more than 90%. In order to achieve high-efficiency lighting, the current key is to increase the light extraction efficiency, that is, to increase the external quantum efficiency. In the traditional double-electrode light-emitting diode, the P / N electrodes are all on the same side, which reduces the ...

Claims

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Application Information

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IPC IPC(8): H01S5/183H01S5/187H01S5/34H01S5/024
Inventor 黄辉徐瑾
Owner HC SEMITEK CORP
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