High-reflectivity light-emitting diode chip with vertical structure and preparation method thereof

A technology of light emitting diodes and high reflectivity, applied in the field of chips, can solve the problems of unsatisfactory improvement of light extraction efficiency, and the light extraction efficiency of devices has not been significantly improved, and achieves the effects of increasing light reflection efficiency, reducing loss and high lumen efficiency.

Inactive Publication Date: 2011-06-22
HC SEMITEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reason is that silver (Ag) is easily oxidized, and the reflection effect of silver oxide (AgO) is only 70% of that of silver (Ag

Method used

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  • High-reflectivity light-emitting diode chip with vertical structure and preparation method thereof
  • High-reflectivity light-emitting diode chip with vertical structure and preparation method thereof
  • High-reflectivity light-emitting diode chip with vertical structure and preparation method thereof

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Example Embodiment

[0012] The manufacturing method of the vertical structure light-emitting diode chip of the embodiment of the present invention is as follows:

[0013] 1. Epitaxially grow a buffer layer 2, an N-type layer 3, a multiple quantum well layer 4, and a P-type layer 5 on the substrate 1.

[0014] 2. Dry etching through photolithography until the sapphire substrate (the etching depth is about 7um);

[0015] 3. Deposit a passivation layer (silicon dioxide) to protect the etched sidewall;

[0016] 4. Evaporated DBR reflective layer 6

[0017] 5. DBR layer photolithography, etching (forming 30 small holes with a diameter of 3 ~ 5um), vapor deposition of ohmic contact layer 7 (Ni / Ag / Ti / Au);

[0018] 6. The bonding metal layer 9 (TiAlTiAu) is vapor-deposited on the heat dissipation substrate 8;

[0019] 7. Binding the substrate and the LED wafer;

[0020] 8. The combination of chemical mechanical polishing and dry etching removes the sapphire substrate, exposing the N-type layer;

[0021] 9. Thin the ...

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Abstract

The invention provides a high-reflectivity light-emitting diode chip with a vertical structure. The chip has a single-electrode structure, comprises a distributed Bragg reflector (DBR), an ohmic contact layer and a low-thermal resistance radiating substrate, greatly improves luminous efficiency, and improves the radiating capacity of devices. The preparation method comprises the following steps of: growing an epitaxial layer on a substrate, wherein the epitaxial layer comprises a buffer layer, an N-type layer, a multi-quantum well layer and a P-type layer; manufacturing graphics of the P-type layer; manufacturing the reflector and the ohmic contact layer; manufacturing a bonding layer of the radiating substrate; bonding the radiating substrate to the P-type layer; removing a sapphire substrate; manufacturing an N electrode; thinning the substrate; evaporating a metal layer to form a P electrode; and testing, scribing and sorting wafers. The chip manufactured by the method can effectively increase light output, improve the radiating capacity of the chip, provide stable light output power, and realize the application of high luminous efficiency.

Description

technical field [0001] The invention relates to a chip, especially a high-reflectivity vertical structure light-emitting diode chip and a preparation method thereof. Background technique [0002] Light-emitting diode is a high-efficiency semiconductor light-emitting device that converts electrical energy into light energy. It is one of the most promising light sources in the 21st century. Light-emitting diodes generally emit light through the carrier intrinsic transition of direct bandgap semiconductors, and have extremely high photoelectric conversion efficiency, that is, high internal quantum efficiency. At present, the internal quantum efficiency of blue light chips can reach more than 90%. In order to achieve high-efficiency lighting, the current key is to increase the light extraction efficiency, that is, to increase the external quantum efficiency. In the traditional double-electrode light-emitting diode, the P / N electrodes are all on the same side, which reduces the ...

Claims

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Application Information

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IPC IPC(8): H01S5/183H01S5/187H01S5/34H01S5/024
Inventor 黄辉徐瑾
Owner HC SEMITEK CORP
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