Substrate surface micro-processing method, composite substrate and LED epitaxial wafer

Abstract

The embodiment of the invention discloses a substrate surface micro-processing method, a composite substrate and an LED epitaxial wafer, and the micro-processing method comprises the steps that: a substrate is provided, an amorphous film layer is deposited on surface of one side of the substrate, a mask pattern layer is prepared on the side, away from the substrate, of the amorphous film layer, and aging treatment is carried out on the substrate with the prepared mask pattern layer. The mask pattern layer is made to diffuse towards the amorphous film layer, a diffusion layer is formed on the interface, making contact with the mask pattern layer, of the amorphous film layer, the substrate obtained after aging treatment is further patterned, a plurality of pattern structures are formed, and due to the fact that the diffusion layer and the amorphous film layer are different in density, a plurality of microstructure protrusions are formed on the surfaces of the pattern structures during etching. According to the micro-processing method provided by the embodiment of the invention, the surface of the patterned structure of the patterned substrate can be coarsened and controlled without influencing the surfaces of other positions, the surface area of the patterned structure is increased, the light reflection efficiency of the patterned substrate is improved, and the external quantum efficiency of the LED epitaxial wafer can be further improved.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of surface treatment, in particular to a method for micro-processing the surface of a substrate, a composite substrate and an LED epitaxial wafer. Background technique [0002] Patterned substrate is currently the most important substrate material for GaN LED epitaxial growth. The microstructure and optical parameters of its surface pattern have a great influence on the quality of the epitaxial wafer, such as patterning with the same size and different surface roughness. After the substrate undergoes the same epitaxial process, there is a big difference in its epitaxial comprehensive quality. [0003] The size of a single pattern on a patterned substrate is generally at or below the micron level. At present, there are few methods that can only roughen the surface of the pattern without affecting the surface at other positions. Contents of the invention [0004] The embodiment of ...

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Problems solved by technology

[0003] The size of a single pattern on a patterned substrate is generally at or below the micron level. At present, there are few methods that can only roughen the surface of the pattern without affecting the surface at other positions.

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