GaN-based LED extension sheet and its preparation method

A technology of LED epitaxial wafers and confinement layers, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of uneven current diffusion and less hole injection, and achieve the goals of improving lumen efficiency, increasing recombination, and enhancing confinement Effect

Inactive Publication Date: 2006-12-27
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The use of high hole concentration GaP layer overcomes the shortcomings of low hole concentration of p-type GaN and thin p-type layer of the original GaN-based LED, which lead to less hole injection and uneven current diffusion under the applied voltage.

Method used

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  • GaN-based LED extension sheet and its preparation method
  • GaN-based LED extension sheet and its preparation method
  • GaN-based LED extension sheet and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The structure of the new GaN-based LED epitaxial wafer is as figure 1 As shown, from bottom to top, they are substrate, low temperature buffer layer, undoped GaN layer, n-type GaN:Si layer, n-type AlGaN:Si layer, quantum well, n-type GaN confinement layer, buffer layer, p-type GaP : Mg layer.

[0038] The preparation method is:

[0039] 1) Adopt GaN dedicated MOCVD, heat up to 1000°C and bake the substrate under hydrogen atmosphere for 10 minutes;

[0040] 2) Cool down to 480°C, and grow a low-temperature buffer layer of GaN with a thickness of 30nm on the substrate;

[0041] 3) Raise the temperature to 1050°C and grow an undoped GaN layer with a thickness of 2.0μm;

[0042] 4) Growing an n-type GaN:Si layer with a thickness of 2.0 μm at a temperature of 1050°C;

[0043] 5) Grow n-type Al with a thickness of 0.1μm at a temperature of 1050℃ 0.1 Ga 0.9 N: Si layer;

[0044] 6) Reduce the temperature to 700℃ to grow In x Ga y N / GaN multiple quantum well structure, the thickne...

Embodiment 2

[0052] The structure of the new GaN-based LED epitaxial wafer is as figure 1 As shown, from bottom to top, they are substrate, low temperature buffer layer, undoped GaN layer, n-type GaN:Si layer, n-type AlGaN:Si layer, quantum well, p-type GaN confinement layer, buffer layer, p-type GaP : Mg layer.

[0053] The preparation method is:

[0054] 1) Adopt GaN dedicated MOCVD, heat up to 1000°C and bake the substrate under hydrogen atmosphere for 10 minutes;

[0055] 2) Cool down to 480°C, and grow a low-temperature buffer layer of GaN with a thickness of 30nm on the substrate;

[0056] 3) Raise the temperature to 1050°C and grow an undoped GaN layer with a thickness of 2.0μm;

[0057] 4) Growing an n-type GaN:Si layer with a thickness of 2.0 μm at a temperature of 1050°C;

[0058] 5) Grow n-type Al with a thickness of 0.1μm at a temperature of 1050℃ 0.1 Ga 0.9 N: Si layer;

[0059] 6) Reduce the temperature to 700℃ to grow In x Ga y N / GaN multiple quantum well structure, the thickne...

Embodiment 3

[0067] The structure of the new GaN-based LED epitaxial wafer is as figure 2 As shown, from bottom to top, it is a substrate, a low-temperature buffer layer, an undoped GaN layer, an n-type GaN:Si layer, a quantum well, an n-type InGaN confinement layer, a buffer layer, and a p-type GaP:Mg layer.

[0068] The preparation method is:

[0069] 1) Adopt GaN dedicated MOCVD, heat up to 1050°C and bake the substrate under hydrogen atmosphere for 8 minutes;

[0070] 2) Cool down to 510°C, and grow a GaN low-temperature buffer layer with a thickness of 25nm on the substrate;

[0071] 3) Raise the temperature to 1000°C and grow an undoped GaN layer with a thickness of 2.5μm;

[0072] 4) Growing an n-type GaN:Si layer with a thickness of 1.0 μm at a temperature of 1000°C;

[0073] 5) Reduce the temperature to 600°C and grow an InGaN / GaN multiple quantum well structure. The thickness of the InGaN well layer is 4nm, the thickness of the GaN barrier layer is 6nm, the In composition of the InG...

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Abstract

The related GaN-base LED epitaxial sheet comprises: from bottom to top, a substrate, a n-type layer, a quantum trap, a limit layer, a buffer layer, and a p-type layer as GaP layer with hole concentration as 2*1018~6*1018cm-3. This invention can reduce p-type layer resistance, overcomes the defects of small GaP forbidden band and limit effect, and improves the GaN-base LED performance obviously.

Description

Technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a GaN-based LED epitaxial wafer with a novel structure and a preparation method thereof. Background technique [0002] GaN-based high-brightness light-emitting diodes (LEDs) are currently the frontiers and hotspots of global optoelectronics research and industry. The preparation of GaN-based LEDs involves three main steps: LED epitaxial wafer growth, LED chip preparation and LED packaging. Among them, LED epitaxial wafer preparation is the core technology of LED, which plays a major role in the performance level of LED. [0003] The existing GaN-based LED epitaxial wafers all use GaN as the main body of the p-type layer, and sometimes a very thin AlGaN layer is grown before the growth of the p-type GaN to increase the confinement of carriers. Currently, GaN-based LEDs and lasers (LD) both adopt this structure. The main problems of p-type GaN are: [0004] 1. The for...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/04
Inventor 李述体范广涵
Owner SOUTH CHINA NORMAL UNIVERSITY
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