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Antireflection film for quantum dot enhancement film (QDEF) and preparation method of antireflection film

A technology of quantum dot enhancement film and anti-reflection film, which is applied in nonlinear optics, instruments, optics, etc., can solve the problems of low brightness and contrast, and achieve the effects of reducing light loss, reducing optical loss, and reducing reflected light

Inactive Publication Date: 2014-09-17
FUZHOU UNIV
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, the brightness and contrast of WLED-based backlights are still relatively low.

Method used

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  • Antireflection film for quantum dot enhancement film (QDEF) and preparation method of antireflection film

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Embodiment 1

[0019] An embodiment of an anti-reflection film for a quantum dot enhanced film (QDEF) of the present invention is as follows figure 1 As shown, 3 and 5 are barrier layers, and 4 is a quantum dot layer. The quantum dot enhanced film 6 includes an anti-reflection film 1 . The antireflection film 1 is formed on the light incident surface 2 of the quantum dot enhanced film 6 .

[0020] In this embodiment, the anti-reflection coating 1 is a single layer, magnesium fluoride is selected as the material of the anti-reflection coating 1 , and its refractive index is 1.38. Through calculation, the thickness of the anti-reflection coating 1 is determined to be 86.05 nm. Put the quantum dot-enhanced film 6 into the cavity, and evacuate it. When the vacuum degree reaches 3*10 -3 At this time, the magnesium fluoride thin film is evaporated on the light incident surface 2 of the quantum dot enhanced film 1 by means of electron beam evaporation. Through test and comparison, compared with ...

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Abstract

The invention relates to an antireflection film for a quantum dot enhancement film (QDEF) and a preparation method of the antireflection film. The QDEF is provided with a barrier layer, a quantum dot layer, another barrier layer and the antireflection film in sequence from top to bottom, wherein the antireflection film is formed by film coating through the electron beam evaporation method, the magnetron sputtering method and the like. A layer of the antireflection film is added on the in-light surface of the QDEF, thus the optical incident efficiency of the QDEF is improved, optical loss of a liquid crystal display (LCD) caused by the introduction of the QDEF is reduced, and the lumen efficiency is improved.

Description

technical field [0001] The invention relates to an anti-reflection film used for a quantum dot enhanced film and a preparation method thereof. Background technique [0002] After half a century of development and research, liquid crystal displays (LCDs) have become the dominant flat panel display technology. Since LCDs do not emit light themselves, they require a backlight. To widen the color gamut of LCDs, several new backlight technologies have been developed. [0003] Cold Cathode Fluorescent Lamp (CCFL) used to be the most common backlight, but it can only achieve a color gamut of 75% NTSC, so in order to get a wider color gamut, higher brightness and lower energy consumption, white light-emitting diodes ( WLED) quickly replaced the position of CCFL and became the main backlight source. However, the brightness and contrast of WLED-based backlights are still relatively low. Therefore, researchers are committed to developing newer backlight technology to improve these ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/13357
Inventor 李福山郭太良吴薇聂晨林健
Owner FUZHOU UNIV
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