12results about How to "Reduce optical loss" patented technology

The application discloses a preparation method of a TOPCon cell and the TOPCon cell. The preparation method comprises the following steps: providing a TOPCon cell process sheet, performing laser slotting treatment on a first preset fine grid line area and a second preset fine grid line area respectively, forming a first transparent conductive material in the slotting structure corresponding to the first preset fine grid line area to form a first fine grid line, forming a second transparent conductive material in the slotting structure corresponding to the second preset fine grid line area to form a second fine grid line, performing silk screen printing and sintering treatment in the first preset main grid line area to form a first main grid line, and performing silk screen printing and sintering treatment in the second preset main grid line area to form a second main grid line, thereby obtaining the TOPCon cell. The above method solves the problem that the fine grid line blocks sunlight from irradiating on the surface of the cell sheet, thereby affecting the photoelectric conversion efficiency of the TOPCon cell.

The invention relates to a high-modulation-efficiency phase modulator based on a silicon nitride-lithium niobate waveguide. The modulator comprises an optical transmission unit and an electric transmission unit, the optical transmission unit comprises a quartz substrate layer, a silicon dioxide buffer layer arranged above the quartz substrate layer, a composite waveguide arranged above the middle position of the silicon dioxide buffer layer, and a silicon dioxide cladding covering the outer side of the composite waveguide; the electric transmission unit comprises a metal traveling wave electrode, and the metal traveling wave electrode adopts an embedded double-layer capacitor microstructure load traveling wave electrode. By optimizing the design of the electrode structure and the waveguide structure, the modulation efficiency is remarkably improved, broadband response and low optical loss are considered at the same time, and the device is suitable for application scenes sensitive to phase modulation efficiency and power consumption, such as high-speed optical fiber communication, coherent optical transmission systems, optical phased arrays and quantum optical experiments.

The invention discloses a polarization multiplexing all-dielectric metasurface structure color device based on gallium phosphide. The device is composed of periodically arranged metasurface units, and each unit sequentially comprises a transparent quartz substrate 1, a TiO2 reflecting layer 2 and an all-dielectric nano resonator located on the TiO2 reflecting layer 2 from bottom to top. The nano resonator is composed of a GaP nano column 3 and a SiO2 impedance matching layer 4 covering the top of the GaP nano column 3. The material cost is low, the manufacturing process is mature, and the designed device shows obvious optical response difference under irradiation of different polarized lights. By utilizing the characteristics of high refractive index and low loss of a gallium phosphide material in a medium-long wave region of visible light, a single reflection peak of which the reflection efficiency is up to 99% and the bandwidth is less than 16nm is realized under X polarization of a visible light wave band; and a stable multi-peak spectrum is formed under Y polarization to serve as a spectrum fingerprint, so that high-quality display and polarization multiplexing functions are realized in the same device. The device is suitable for the fields of high-color-gamut display, optical anti-counterfeiting and the like.

The present application belongs to the technical field of laser communication, and particularly relates to an optical-mechanical system for coaxial full-duplex wireless laser communication. The laser emitted by a 1550nm laser is modulated by a laser modulator, enters a collimating and expanding lens group for collimating and expanding, and is emitted to a target in the backward space after being reflected by a double-plane mirror group. The spatial light reflected by the target is converged by a Cassegrain telescope system, the converged spatial light is filtered of background stray light by a 1550nm filter, the spatial light filtered of the background stray light is received by a detector and converted into an electric signal. The laser beam emitted to the backward space after being reflected by the double-plane mirror group is coaxially arranged with the spatial light incident to the Cassegrain telescope system, and the spatial pointing consistency of the receiving and transmitting light paths is realized. The assembly tolerance requirement is reduced, and the assembly convenience and engineering realizability of the system are ensured.

The application discloses a solar cell, a laminated cell and a photovoltaic module. The solar cell comprises a silicon substrate; the silicon substrate comprises a first surface and a second surface arranged oppositely, and the first surface comprises first regions and second regions distributed at intervals; the surface height of the silicon substrate at the first regions is lower than the surface height of the silicon substrate at the second regions, so that a step portion is formed at the junction area of the first regions and the second regions; an electrode structure is further arranged on the first surface, the electrode structure corresponds to the second regions and extends to the step portion; blind groove structures are distributed on the step portion and are arranged in a direction parallel to the thickness direction of the silicon substrate. The preparation method of the solar cell piece of the solar cell improves the interface of the step portion region, reduces the optical loss at the edge of the cell, improves the light absorption efficiency and improves the conversion efficiency of the solar cell piece.

The invention provides a micro light-emitting structure, a micro light-emitting device and a preparation method of the micro light-emitting structure. The miniature light-emitting structure comprises a light-emitting array, the light-emitting array comprises a plurality of light-emitting units arranged side by side, each light-emitting unit is of a tabletop structure, the tabletop structure comprises a first tabletop and a second tabletop opposite to the first tabletop, and the area of the first tabletop is larger than that of the second tabletop; each light-emitting unit comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked, the surface, deviating from the light-emitting layer, of the first semiconductor layer is a first table top, and the surface, deviating from the light-emitting layer, of the second semiconductor layer is a second table top; and the metal conductive isolation layer fills the first opening, and the first opening is arranged between the two adjacent first table surfaces.

The application provides a battery assembly, a photovoltaic assembly and a building, wherein the battery assembly comprises a battery string, the battery string comprises a plurality of solar cells and a conductive assembly, the plurality of solar cells are arranged side by side along a first direction, the conductive assembly is arranged on at least one side of the plurality of solar cells in a thickness direction and comprises a plurality of conductive pieces, at least part of the plurality of conductive pieces are electrically connected to any two adjacent solar cells in the plurality of solar cells along the first direction, wherein the plurality of conductive pieces of the conductive assembly has a first region and a second region, at least one of the first region and the second region is provided with a coating layer, so that at least one of the first region and the second region has a pattern. In this way, the photoelectric conversion efficiency of the patterned photovoltaic assembly is higher.

The application discloses a tunable optoelectronic oscillator based on a DML-SOA laser chip and belongs to the technical field of semiconductor processes. The tunable optoelectronic oscillator comprises a self-feedback laser, the self-feedback laser encapsulates a DML-SOA laser and an optical isolator in a butterfly tube shell, and is sequentially connected with an optical time delay line and an optoelectronic detector through an optical path, the optoelectronic detector is connected with an electrical amplifier through an electric circuit, the electrical amplifier is connected with an electrical coupler through an electric circuit, one of the electrical coupler is connected with a Bias-T through an electric circuit, the other of the electrical coupler is used as a microwave signal output, and a direct-current power supply is connected with the Bias-T and the self-feedback laser simultaneously. The tunable optoelectronic oscillator has the characteristics of compact structure, high signal-to-noise ratio and low phase noise, can realize a P-1 oscillation phenomenon with adjustable frequency interval through simple electrical injection tuning, and has a wide application prospect in the field of optoelectronic integration and microwave signal generation.

The utility model discloses a nitride semiconductor laser, which comprises a heat dissipation heat sink and a laser structure, and is characterized in that the laser structure comprises a first type waveguide layer, a quantum well layer and a second type waveguide layer which are stacked in sequence; wherein the first type is a P type, and the second type is an N type; or, the first type is an N type, and the second type is a P type; the doping concentration of the P-type waveguide layer is gradually changed along the growth direction of the device; the nitride semiconductor laser is obtained by growing and stripping on the gallium surface of the gallium nitride substrate. The gallium-based solar cell is obtained by growing and stripping on a gallium surface, thereby being beneficial to heat scattering and improving the high-power output performance of the device; and meanwhile, in cooperation with gradient doping of the P-type waveguide layer, penetration dislocation can be reduced through staged lattice matching.

The utility model discloses a compound semiconductor film resonant cavity structure, which comprises a germanium wafer substrate, a plurality of film resonant cavities distributed in an array are arranged on the top surface of the germanium wafer substrate, and the film resonant cavities are formed on the top surface of the germanium wafer substrate through a photoetching process. An aluminum oxide reflective coating layer is arranged in each thin film resonant cavity close to the middle, sapphire layer high feet with the height of 60 micrometers and the width of 500 micrometers are arranged on the left side and the right side of each aluminum oxide reflective coating layer through the photoetching technology respectively, and the sapphire layer high feet and the aluminum oxide reflective coating layers are of an integrated structure and selectively grow through the MOCVD technology. According to the structure, the integration requirement is met through the miniaturized design and array distribution of the thin film resonant cavity, the MOCVD integrated technology reduces the assembly error, the interface layering problem of traditional epoxy resin pasting is avoided, unification of miniaturization, high sensitivity and high reliability is achieved, and the problem that the sound pressure response sensitivity is insufficient is solved.

The invention provides a back contact solar cell and a preparation method and application thereof. The back contact solar cell comprises a silicon substrate, the silicon substrate comprises a front face and a back face which are opposite, and the front face is of a textured structure; in the first direction, the back surface comprises first type regions and second type regions which are alternately arranged, and the adjacent first type regions and second type regions are spaced by spacer regions; the surface of the silicon substrate corresponding to the first type region, the second type region and the spacer region is of a planar structure; the first type region comprises a first dielectric layer, a first doping layer, a first passivation layer and a first antireflection layer; the second type region comprises a second dielectric layer, a second doping layer, a second passivation layer and a second antireflection layer; the front surface is provided with a front surface floating emitter, and the back surface is provided with a metal electrode. According to the invention, the optical secondary internal refraction of the back surface is fully utilized, the recombination loss caused by the minority carrier transverse transmission process is reduced, and the electric shielding influence is reduced.

This invention discloses an electro-optic tuned filter based on a Si3N4 long-period waveguide grating and an electro-optic polymer composite structure. The filter forms a long-period grating by periodic etching on the surface of a silicon nitride waveguide, coupling the core mode with the cladding mode. An electro-optic polymer cladding is introduced above the waveguide, and the cladding refractive index is modulated by applying an electric field using the Pockels effect of the electro-optic polymer, thereby achieving electro-optic tuning of the filter's center wavelength. Simultaneously, a refractive index gradient structure is constructed by forming low-refractive-index side claddings on both sides of the electro-optic polymer cladding using a photobleaching process to optimize the mode distribution. Furthermore, the introduction of a SiO2 blocking layer effectively suppresses electro-optic modulation of the core mode, improving the filter's electro-optic tuning efficiency. This structural design significantly improves the filter's electro-optic tuning efficiency, achieving high-speed, high-efficiency electro-optic tuning while maintaining low loss, making it suitable for integrated photonic chips, optical communication systems, and spectral sensing applications.