198results about How to "Reduce optical loss" patented technology

An SOI-based photonic bandgap (PBG) electro-optic device utilizes a patterned PBG structure to define a two-dimensional waveguide within an active waveguiding region of the SOI electro-optic device. The inclusion of the PBG columnar arrays within the SOI structure results in providing extremely tight lateral confinement of the optical mode within the waveguiding structure, thus significantly reducing the optical loss. By virtue of including the PBG structure, the associated electrical contacts may be placed in closer proximity to the active region without affecting the optical performance, thus increasing the switching speed of the electro-optic device. The overall device size, capacitance and resistance are also reduced as a consequence of using PBGs for lateral mode confinement.

The invention provides a fluorine-containing polyimide optical waveguide material and the preparing method thereof relating to the integrating polymer material preparing method in optical device, which can be applied in waveguide optics device, the material is obtained from condensation and copolymerization of three monomers, that is the fluorine-containing polyimide is condensed and copolymerized from two diamine monomers and one dianlydride monomer or from two diamine monomers and one dianlydride monomer, after purification, the fluorine-containing polyimide n-methyl-2-pyrrolidone solution is obtained, and is then dropped on center of clean substrate for spin coating to form film, and desiccation and curing. The glass transition temperature of the material is above 200 DEG C, in the field of optical communication on 1550nm the optical loss is less than 0.6dB/cm, the refractive index on 1550nm is 1.5-1.6.

Photonic integrated circuits (PICs) are based on quantum cascade (QC) structures. In embodiment methods and corresponding devices, a QC layer in a wave confinement region of an integrated multi-layer semiconductor structure capable of producing optical gain is depleted of free charge carriers to create a low-loss optical wave confinement region in a portion of the structure. Ion implantation may be used to create energetically deep trap levels to trap free charge carriers. Other embodiments include modifying a region of a passive, depleted QC structure to produce an active region capable of optical gain. Gain or loss may also be modified by partially depleting or enhancing free charge carrier density. QC lasers and amplifiers may be integrated monolithically with each other or with passive waveguides and other passive devices in a self-aligned manner. Embodiments overcome challenges of high cost, complex fabrication, and coupling loss involved with material re-growth methods.

The invention discloses an electric pump gallium nitride micro laser capable of achieving single-direction emission and a preparation method of the electric pump gallium nitride micro laser. The method comprises the steps of firstly utilizing silicon-based p-type gallium nitride/quantum well/n-type gallium nitride materials, utilizing the electron beam etching technology and the deep-silicon etching technology for preparing an asymmetric gallium nitride suspension thin film micro-cavity supported by a single cantilever beam, conducting vapor deposition of an Au/Ni electrode on the front face of a wafer, conducting vapor deposition of Au/Ti on the surface of the n-type gallium nitride, adopting the ultrasonic bonding technology, bonding a lead on the surface of the electrode, and finally preparing the complete laser. According to the electric pump gallium nitride micro laser and the preparation method of the electric pump gallium nitride micro laser, a proper current is exerted on the prepared laser, and whispering gallery mode ultraviolet laser with single-direction emission is obtained.

The invention provides a molecular beam epitaxy (MBE) growing method of a high-speed vertical-cavity surface-emitting laser. The method comprises the steps that deoxidation pretreatment is conducted on a GaAs substrate, and epitaxial growth of a GaAs buffer layer, a lower DBR, an active region, an oxidation confinement layer and an upper DBR is sequentially achieved; in the growth process, the active region is clamped between the upper DBR and the lower DBR, and a delta-doping method is adopted by the potential barrier middle position of the active region, wherein a doping source adopts carbon (C), and growth is stopped for a period of time under the protection of As after delta-doping is completed. By means of the method, the technical problems of reducing a threshold, increasing differential gain and reducing nonlinear gain compression are solved, and the good effects of reducing optical losses, decreasing line width and increasing output power and intrinsic bandwidth are achieved.

The invention discloses a solar light condensed heat collector and a method for designing the solar light condensed heat collector. A paraboloid main reflector is arranged. A vacuum heat collecting pipe is installed on the symmetrical axis of the cross section of the paraboloid main reflector and on the inner side of the focal line of the paraboloid main reflector. An even light reflector is installed on the outer side of the focal line of the paraboloid main reflector. The even light reflector and an opening of the paraboloid main reflector are oppositely arranged and fixedly connected. According to the solar light condensed heat collector and the method for designing the solar light condensed heat collector, the vacuum heat collecting pipe is arranged below the position of the focal line of the paraboloid main reflector, the even light reflector is additionally arranged and opposite to the opening of the paraboloid main reflector, solar radiation energy can be distributed at the bottom and the top of a heat absorption pipe, solar energy flux density distribution on the wall face of the heat absorption pipe is homogenized, the temperature gradient and the highest temperature of the wall face of the heat absorption pipe are reduced, a series of problems caused by uneven energy flux density can be avoided from the source, and safety performance of the vacuum heat collecting pipe is improved.

A light emissive or photovoltaic device comprising: a cathode structure for injecting electrons, the cathode structure having one or more constituent regions; an anode structure for injecting holes, the anode structure having one or more constituent regions; and an organic light emissive component located between the anode structure and the cathode structure; a first charge transport layer located between the first electrode and the organic component and of a material having a refractive index greater than 1.85; wherein the device structure supports optical gain within the device.

The invention relates to a photovoltaic encapsulating material with high light transmittance. The photovoltaic encapsulating material is prepared by premixing 100 parts by weight of matrix resin or grafting modified matrix resin of the photovoltaic encapsulating material, 0.01 to 20 parts by weight of highly transparent resin with high light transmittance and/or high refractive index, and other auxiliary agents, and then carrying out melting, extruding, tape casting, film forming, cooling, cutting, and rolling. By introducing the highly transparent resin with high light transmittance and/or high refractive index into the encapsulating material system, the refractive indexes of glass, the front-layer encapsulating material, and a battery sheet can be perfectly matched; the light transmittance of the photovoltaic encapsulating material is increased; the intensity of light projected on the battery sheet is enhanced, thus the utilization rate of solar light is increased; the current and output power of the battery are increased; and the photovoltaic conversion efficiency is optimized and increased.

The invention discloses a polarization-controlled surface plasmon bifunctional metasurface and a design and preparation method thereof. The metasurface longitudinally adopts a metal-medium-metal three-layer structure, the surface includes a trapezoidal unit structure array, independent regulation and control of the amplitude and the phase of light in different polarization states are achieved, phase regulation and control can be conducted on polarized light in the x direction, and the function of a deflector is achieved. Amplitude regulation and control can be carried out on polarized light inthe y direction to achieve a structural color function. According to the bifunctional structure, the integration level and the regulation and control diversity of the metasurface structure are improved, deflection and structural color are independent of each other and supplement each other, and the combination of the two functions provides a brand-new solution for anti-counterfeiting, measurementof birefringence of biological tissue and measurement of optical rotation of biomolecules.

The invention discloses a support substrate, a preparation method thereof and a display panel, and relates to the technical field of the display. The support substrate comprises a device layer and a supporting layer which are stacked, the device layer comprises an identification area and a non-identification area, the supporting layer comprises a first supporting area corresponding to the identification area in position and a second supporting area corresponding to the non-identification area in position, and the thickness of the first supporting area is smaller than that of the second supporting area. According to the embodiment of the invention, through reducing the thickness of the first supporting area, corresponding to the identification area of the device layer, of the supporting layer, the transmittance of the first support area is improved, the optical loss is reduced, and the optical identification rate and sensitivity of an optical sensor are improved.

A nevigation-class cyclic interference type integrated optical gyroscope is composed of optical transceiver module, Y-waveguide electro-optical phase modulation module, closed-loop control and signalreader module, and sensing loop module consisting of coupler, optical semiconductor amplifier and Sainaike-effect sensing loop. Said phasew modulation module is bidirectionally connected with said optical transceiver module and sensing loop module. The D/A converter is said optical transceiver module is connected to said closed-loop control and signal reader module. Its advantages include short SSR length, high compatibility, small size, low cost and high reliability.

The invention relates to a novel crystalline silicon cell in the field of a photovoltaic technology, and specifically relates to a full back side contact crystalline silicon cell which is prepared through combination with an ion implantation technology, and also relates to a preparation method of the cell. The full back side contact crystalline silicon cell comprises a silicon chip substrate, an anti-reflection layer, a base electrode, an emitter electrode, a metal gate line and the like. The emitter electrode and the base electrode of the full back side contact crystalline silicon cell are not disposed in the same plane, so that electrons and cavities can be considered to move to the emitter electrode and the base electrode through a quire short path, and carrier bulk recombination in the cell can be reduced; through moving the emitter electrode and the metal grate line from a front surface, i.e., a light receiving surface to a back surface, the optical loss is reduced; the emitter electrode is obtained through an ion implantation method, and the process steps are reduced compared to a conventional thermal diffusion doping method; and the front surface and the back surface are each provided with a passivation layer, and the front surface is further provided with a front surface field (FSF), so that the carrier surface recombination can be reduced, and the invention finally provides a solar cell which has the advantages of high batch production efficiency and simple technology.

The invention discloses an echo wall microcavity acoustic sensor, and a preparation method of a double-ring resonant cavity thereof. The sensor comprises a laser, a spectrum system, and a double-ringresonant cavity; the laser is used for emitting laser to the spectrum system; and the spectrum system is used for vertically reflecting the laser to the double-ring resonant cavity. The sensitivity ofthe acoustic sensor is improved, and sound waves can be efficiently detected.

A preparation method of quasi-phase matching crystals for improving CO2 laser frequency multiplication efficiency belongs to the field of laser and is characterized in that zinc selenide single crystals are regarded as quasi-phase matching frequency multiplication crystals, the zinc selenide single crystals are cut into a plurality of flakes with a thickness between 100 micrometer and 120 micrometer in the same specification along a perpendicular (110) direction of the zinc selenide single crystals, polarization directions of adjacent crystal flakes differ by 180 DEG, the surfaces of the crystal flakes are bombarded by hydrogen ion beam after being polished, the adjacent zinc selenide crystal flakes are combined firmly through a bonding technology, and multiple layers of crystal flakes are formed into an integration. Compared with existing common frequency multiplication methods, the method has the advantages that optical loss of devices is small, clear aperture can reach above 1 cm<2>, and conversion efficiency and output power of CO2 laser quasi-phase matching frequency multiplication crystals are improved greatly.

Provided are a lithium niobate photomodulator and a manufacturing and packaging method thereof. A waveguide structure is manufactured on a lithium niobate substrate through hydrogenated amorphous silicon, the size of a waveguide can be effectively reduced by means of the high refractive index of the amorphous silicon, and therefore the distance between metal electrodes on the lithium niobate photomodulator is reduced, and voltage needing modulating is low. A waveguide chip is preferentially manufactured by the hydrogenated amorphous silicon, and Si:H chains of the amorphous silicon can reduce optical losses. Due to the fact that the thickness of the hydrogenated amorphous silicon is adjusted, the photoelectric effect of the lithium niobate photomodulator can be maximized under the premise that the size of the waveguide is guaranteed. Due to that fact that the thickness of silicon dioxide and the thicknesses of the metal electrodes are controlled, good radio frequency matching can be guaranteed, and an optical fiber interface connected with the outside is achieved through waveguide lines penetrating through a waveguide layer; because all the waveguide lines are located in the waveguide layer, enough metal regions for packaging or testing can be reserved. The perfect packaging process can reduce the occurrence probability of the phenomenon of electric leakage, and the phenomenon that a humid environment leads to a short-circuit phenomenon is avoided.

The embodiment of the invention provides a laser radar chip, a laser radar and a laser detection method thereof. The laser radar chip comprises an optical switch module and an optical antenna array which are connected with each other, the optical switch module is connected to a detector or an input coupler, and the input coupler is connected to a laser; the input coupler is used for receiving laser emitted by the laser and sending the laser to the optical switch module through the optical waveguide; the optical switch module comprises a micro-ring and an optical waveguide and is used for transmitting the laser to the optical antenna array or transmitting a reflection echo corresponding to the laser to the detector; and the optical antenna array is used for emitting the laser to a space or receiving a reflection echo corresponding to the laser and sending the reflection echo to the optical switch module. According to the embodiment of the invention, the size of the laser radar chip and the optical loss can be reduced.