22results about How to "Reduce optical loss" patented technology

A composite structure hollow anti-resonance optical fiber disclosed by the present invention comprises an outer cladding layer, a doping layer and an anti-resonance layer which are sequentially arranged from outside to inside, the anti-resonance layer comprises a plurality of glass nested combination tubes which are uniformly distributed along the circumferential direction, are tangent to the doping layer and are arranged at intervals, and the plurality of glass nested combination tubes surround to form an air fiber core. The glass nested combined pipe comprises an outer nested pipe of a circular structure and an inner nested pipe of an oval structure arranged in the outer nested pipe. The short half axis of the inner nested pipe is arranged in the radial direction of the optical fiber, and the outer ring, away from the air fiber core, of the inner nested pipe is tangent to the inner ring, away from the air fiber core, of the outer nested pipe. According to the invention, a multi-layer nested structure is adopted, and the anti-resonance effect is optimized through the cooperation of the doping layer and the anti-resonance layer with a special structure.

The invention provides a passivation contact solar cell and a photovoltaic module, the passivation contact solar cell comprises a silicon substrate, and the backlight surface of the silicon substrate comprises a first area and a third area which are arranged at an interval; in the first region, the backlight surface of the silicon substrate is sequentially provided with a dielectric layer, a first doping layer and a first passivation layer, and the dielectric layer and the first doping layer form a passivation contact structure in the first region; in the third area, the backlight surface of the silicon substrate is provided with a first passivation layer; the second area is arranged between the first area and the third area, the second area is provided with the step structure, the number of steps in the step structure is at least two, the optical loss of the passivation contact solar cell can be reduced, and therefore the photoelectric conversion efficiency of the solar cell is improved.

A narrow-pulse-width multi-wavelength laser based on LED pumping comprises a reflecting mirror, a first LED pumping module, an optical rotation crystal, a second LED pumping module, an acousto-optic Q-switched crystal and an output mirror which are sequentially connected in series. The LED pumping module comprises a laser rod located in the center, a glass sleeve is arranged on the periphery of the laser rod in the length direction, a supporting frame is arranged on the periphery of the glass sleeve, a plurality of sets of water-cooling copper blocks are evenly arranged on the supporting frame, and an LED stacking array is arranged on the side, close to the glass sleeve, of each set of water-cooling copper blocks. Each LED stacking array comprises an LED light bar and a PCB (Printed Circuit Board) for fixing the LED light bar, and the PCB is connected with the water-cooling copper block; cooling water circulation modules are arranged at the two ends of the laser rod in the length direction respectively, and water through holes are formed in the cooling water circulation modules and the water cooling copper blocks respectively. A laser resonant cavity system of the laser takes an LED as a pumping source, combines an acousto-optic Q-switching technology, and simultaneously realizes compression of laser pulse width and multi-wavelength output.

The application discloses a preparation method of a TOPCon cell and the TOPCon cell. The preparation method comprises the following steps: providing a TOPCon cell process sheet, performing laser slotting treatment on a first preset fine grid line area and a second preset fine grid line area respectively, forming a first transparent conductive material in the slotting structure corresponding to the first preset fine grid line area to form a first fine grid line, forming a second transparent conductive material in the slotting structure corresponding to the second preset fine grid line area to form a second fine grid line, performing silk screen printing and sintering treatment in the first preset main grid line area to form a first main grid line, and performing silk screen printing and sintering treatment in the second preset main grid line area to form a second main grid line, thereby obtaining the TOPCon cell. The above method solves the problem that the fine grid line blocks sunlight from irradiating on the surface of the cell sheet, thereby affecting the photoelectric conversion efficiency of the TOPCon cell.

The invention provides a micro-ring core cavity with an ultrahigh quality factor and a preparation method and application thereof. The micro-ring core cavity comprises a circular micro disc, a solid circular ring arranged on the periphery of the outer edge of the circular micro disc, and a base for supporting the circular micro disc, the circular micro disc and the solid circular ring are made of silicon oxide, and the base is made of silicon; the annular outer diameter of the solid circular ring is 3-6 mm; and the quality factor of the micro-ring core cavity is greater than or equal to 1 * 10 < 9 >. By improving the traditional micro-ring core cavity preparation process, the large-size micro-ring core cavity with an ultrahigh quality factor is finally obtained, the application value of a sample is remarkably improved, and large-scale popularization and application are facilitated.

The invention relates to a high-modulation-efficiency phase modulator based on a silicon nitride-lithium niobate waveguide. The modulator comprises an optical transmission unit and an electric transmission unit, the optical transmission unit comprises a quartz substrate layer, a silicon dioxide buffer layer arranged above the quartz substrate layer, a composite waveguide arranged above the middle position of the silicon dioxide buffer layer, and a silicon dioxide cladding covering the outer side of the composite waveguide; the electric transmission unit comprises a metal traveling wave electrode, and the metal traveling wave electrode adopts an embedded double-layer capacitor microstructure load traveling wave electrode. By optimizing the design of the electrode structure and the waveguide structure, the modulation efficiency is remarkably improved, broadband response and low optical loss are considered at the same time, and the device is suitable for application scenes sensitive to phase modulation efficiency and power consumption, such as high-speed optical fiber communication, coherent optical transmission systems, optical phased arrays and quantum optical experiments.

The invention discloses a polarization multiplexing all-dielectric metasurface structure color device based on gallium phosphide. The device is composed of periodically arranged metasurface units, and each unit sequentially comprises a transparent quartz substrate 1, a TiO2 reflecting layer 2 and an all-dielectric nano resonator located on the TiO2 reflecting layer 2 from bottom to top. The nano resonator is composed of a GaP nano column 3 and a SiO2 impedance matching layer 4 covering the top of the GaP nano column 3. The material cost is low, the manufacturing process is mature, and the designed device shows obvious optical response difference under irradiation of different polarized lights. By utilizing the characteristics of high refractive index and low loss of a gallium phosphide material in a medium-long wave region of visible light, a single reflection peak of which the reflection efficiency is up to 99% and the bandwidth is less than 16nm is realized under X polarization of a visible light wave band; and a stable multi-peak spectrum is formed under Y polarization to serve as a spectrum fingerprint, so that high-quality display and polarization multiplexing functions are realized in the same device. The device is suitable for the fields of high-color-gamut display, optical anti-counterfeiting and the like.

The present application belongs to the technical field of laser communication, and particularly relates to an optical-mechanical system for coaxial full-duplex wireless laser communication. The laser emitted by a 1550nm laser is modulated by a laser modulator, enters a collimating and expanding lens group for collimating and expanding, and is emitted to a target in the backward space after being reflected by a double-plane mirror group. The spatial light reflected by the target is converged by a Cassegrain telescope system, the converged spatial light is filtered of background stray light by a 1550nm filter, the spatial light filtered of the background stray light is received by a detector and converted into an electric signal. The laser beam emitted to the backward space after being reflected by the double-plane mirror group is coaxially arranged with the spatial light incident to the Cassegrain telescope system, and the spatial pointing consistency of the receiving and transmitting light paths is realized. The assembly tolerance requirement is reduced, and the assembly convenience and engineering realizability of the system are ensured.

The utility model relates to display equipment technical field especially LED packaging structure and display device, LED packaging structure includes wiring layer, with the LED chip of wiring layer electricity connection, the filling layer that sets up around LED chip, set up in the sapphire layer that LED chip far away from wiring layer one side and LED chip are pasted, LED packaging structure still includes the fluorescent layer that sets up around filling layer and sapphire layer, fluorescent layer sets up around filling layer and sapphire layer, realizes spectrum conversion, when the blue light that LED chip emits irradiates on fluorescent layer, fluorescent layer absorbs part blue light and emits other color light, and the white light that mixes with blue light is obtained to realize MIP white light product, make the light that emits from LED packaging structure more uniform, improve illumination quality and visual comfort.

The application discloses a solar cell, a laminated cell and a photovoltaic module. The solar cell comprises a silicon substrate; the silicon substrate comprises a first surface and a second surface arranged oppositely, and the first surface comprises first regions and second regions distributed at intervals; the surface height of the silicon substrate at the first regions is lower than the surface height of the silicon substrate at the second regions, so that a step portion is formed at the junction area of the first regions and the second regions; an electrode structure is further arranged on the first surface, the electrode structure corresponds to the second regions and extends to the step portion; blind groove structures are distributed on the step portion and are arranged in a direction parallel to the thickness direction of the silicon substrate. The preparation method of the solar cell piece of the solar cell improves the interface of the step portion region, reduces the optical loss at the edge of the cell, improves the light absorption efficiency and improves the conversion efficiency of the solar cell piece.

The invention discloses a fluorocarbonate nonlinear optical crystal and a growth method thereof, wherein the chemical formula is K 4 Tb 2 (CO 3 ) 3 F 4 , belongs to the trigonal system, the space group is R32, and the unit cell parameters are #imgabs0#α=β=90.0000°, γ=120.0000°; #imgabs1# The crystal is grown by subcritical hydrothermal method. Carbonate is easy to decompose at high temperature. The temperature used in the present invention is a high temperature and high pressure hydrothermal method above 500°C. The growth temperature is lower than that of the molten salt method. The obtained crystal has high purity, small thermal stress, few macro defects, better crystal quality and larger crystal size. The crystal of the present invention is a new type of rare earth terbium material coordinated by fluorine and carbonate, which has good nonlinear optical properties, can achieve higher transparency and lower optical loss in optical devices, and can be applied to optoelectronics, optical communications, optical sensors and other fields.

The invention provides a micro light-emitting structure, a micro light-emitting device and a preparation method of the micro light-emitting structure. The miniature light-emitting structure comprises a light-emitting array, the light-emitting array comprises a plurality of light-emitting units arranged side by side, each light-emitting unit is of a tabletop structure, the tabletop structure comprises a first tabletop and a second tabletop opposite to the first tabletop, and the area of the first tabletop is larger than that of the second tabletop; each light-emitting unit comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked, the surface, deviating from the light-emitting layer, of the first semiconductor layer is a first table top, and the surface, deviating from the light-emitting layer, of the second semiconductor layer is a second table top; and the metal conductive isolation layer fills the first opening, and the first opening is arranged between the two adjacent first table surfaces.

The application provides a battery assembly, a photovoltaic assembly and a building, wherein the battery assembly comprises a battery string, the battery string comprises a plurality of solar cells and a conductive assembly, the plurality of solar cells are arranged side by side along a first direction, the conductive assembly is arranged on at least one side of the plurality of solar cells in a thickness direction and comprises a plurality of conductive pieces, at least part of the plurality of conductive pieces are electrically connected to any two adjacent solar cells in the plurality of solar cells along the first direction, wherein the plurality of conductive pieces of the conductive assembly has a first region and a second region, at least one of the first region and the second region is provided with a coating layer, so that at least one of the first region and the second region has a pattern. In this way, the photoelectric conversion efficiency of the patterned photovoltaic assembly is higher.

The application discloses a tunable optoelectronic oscillator based on a DML-SOA laser chip and belongs to the technical field of semiconductor processes. The tunable optoelectronic oscillator comprises a self-feedback laser, the self-feedback laser encapsulates a DML-SOA laser and an optical isolator in a butterfly tube shell, and is sequentially connected with an optical time delay line and an optoelectronic detector through an optical path, the optoelectronic detector is connected with an electrical amplifier through an electric circuit, the electrical amplifier is connected with an electrical coupler through an electric circuit, one of the electrical coupler is connected with a Bias-T through an electric circuit, the other of the electrical coupler is used as a microwave signal output, and a direct-current power supply is connected with the Bias-T and the self-feedback laser simultaneously. The tunable optoelectronic oscillator has the characteristics of compact structure, high signal-to-noise ratio and low phase noise, can realize a P-1 oscillation phenomenon with adjustable frequency interval through simple electrical injection tuning, and has a wide application prospect in the field of optoelectronic integration and microwave signal generation.

The present invention provides an optical splitter based on silicon nitride photonic crystal and a preparation method thereof, the optical splitter comprising: a silicon layer, a silicon oxide layer and a silicon nitride waveguide layer arranged in sequence from bottom to top; a two-dimensional silicon nitride photonic crystal waveguide is formed in the middle part of the silicon nitride waveguide layer, and grating emitters are formed at both ends; the two-dimensional silicon nitride photonic crystal waveguide comprises a row of circular grooves arranged periodically along the length direction of the silicon nitride waveguide layer and a silicon nitride waveguide layer in the middle part; the grating emitter is a semicircular concentric surrounding grating and has two semicircular hollow holes. The applicable bandwidth of silicon nitride material is large, and the silicon nitride grating designed with two semicircular hollow holes has low optical loss and high light emission efficiency; in addition, the optical beam splitter can realize the collection of off-chip light waves while transmitting and splitting light waves to form off-chip emitted light; finally, the preparation method is well compatible with CMOS technology, the process is simple, and it is easy to mass produce.

The present invention provides an optical quantum computing chip integrating a light source and a controlled NOT gate, the chip comprising a coherent excitation light source, a single-bit gate, a controlled NOT gate circuit and a detection module; wherein the coherent excitation light source emits two photons, and two single-bit gates are used to prepare arbitrary single-bit state photons, which are input into the controlled NOT gate circuit, and are detected by the detection module after passing through the controlled NOT gate circuit. The present invention can avoid complex four-wave mixing frequency degeneracy by integrating the light source and the controlled NOT gate on chip, and at the same time, the on-chip integration approach has the advantages of high integration, stable working conditions, and low cost.

The utility model discloses a backlight module and discloses a display device with the backlight module, the backlight module comprises a base, the base is of a cavity structure with an opening at one end, a plurality of lamp strips are arranged along the length direction of the base, the lamp strips are arranged along the width direction of the base at intervals, and a plurality of light-emitting lamp beads are integrated on the lamp strips. The base is further provided with a first mounting part and a second mounting part, and a mounting groove is further formed in a frame of the base; the reflector plate is matched with the base in shape and size, the reflector plate is clamped between the base and the lamp strip, a first opening and a second opening are formed in the reflector plate, the first mounting part is sleeved with the first opening, and the second mounting part is sleeved with the second opening; the optical film is clamped in the mounting groove and covers the opening of the base, so that a relatively closed space is formed in the base; and the supporting structure comprises a first ejector rod and a second ejector rod, and the supporting structure provides support for the optical film. The display effect of the backlight module can be improved, and the backlight module is lighter and thinner.

This patent discloses a multi-dimensional combined adjustable CPC heat collecting device, including a straight-through all-glass vacuum heat collecting tube with a jack, a curved heat pipe vacuum heat collecting tube, a primary semi-compound parabolic concentrator, a secondary curved double-dimensional compound parabolic concentrator, and a two-stage adjustable angle support frame device, wherein the lower end of the curved heat pipe vacuum heat collecting tube is inserted into the straight-through all-glass vacuum heat collecting tube with a jack. The CPC collector device adopts a combination of longitudinal and transverse focusing, two-time and one-time focusing, curved heat pipe and straight-through vacuum heat collecting tubes, collector orientation adjustment and reflector angle adjustment, etc., so as to achieve a higher heat collection temperature by increasing the concentration ratio as much as possible while ensuring the sunlight receiving angle, reduce optical loss and the number of reflector angle adjustments, and improve the comprehensive heat collection efficiency of the solar collector. At the same time, it has high adjustability, a wide range of applications, is easy to assemble and disassemble, and has low cost.

The utility model discloses a nitride semiconductor laser, which comprises a heat dissipation heat sink and a laser structure, and is characterized in that the laser structure comprises a first type waveguide layer, a quantum well layer and a second type waveguide layer which are stacked in sequence; wherein the first type is a P type, and the second type is an N type; or, the first type is an N type, and the second type is a P type; the doping concentration of the P-type waveguide layer is gradually changed along the growth direction of the device; the nitride semiconductor laser is obtained by growing and stripping on the gallium surface of the gallium nitride substrate. The gallium-based solar cell is obtained by growing and stripping on a gallium surface, thereby being beneficial to heat scattering and improving the high-power output performance of the device; and meanwhile, in cooperation with gradient doping of the P-type waveguide layer, penetration dislocation can be reduced through staged lattice matching.

The utility model discloses a compound semiconductor film resonant cavity structure, which comprises a germanium wafer substrate, a plurality of film resonant cavities distributed in an array are arranged on the top surface of the germanium wafer substrate, and the film resonant cavities are formed on the top surface of the germanium wafer substrate through a photoetching process. An aluminum oxide reflective coating layer is arranged in each thin film resonant cavity close to the middle, sapphire layer high feet with the height of 60 micrometers and the width of 500 micrometers are arranged on the left side and the right side of each aluminum oxide reflective coating layer through the photoetching technology respectively, and the sapphire layer high feet and the aluminum oxide reflective coating layers are of an integrated structure and selectively grow through the MOCVD technology. According to the structure, the integration requirement is met through the miniaturized design and array distribution of the thin film resonant cavity, the MOCVD integrated technology reduces the assembly error, the interface layering problem of traditional epoxy resin pasting is avoided, unification of miniaturization, high sensitivity and high reliability is achieved, and the problem that the sound pressure response sensitivity is insufficient is solved.

The invention provides a back contact solar cell and a preparation method and application thereof. The back contact solar cell comprises a silicon substrate, the silicon substrate comprises a front face and a back face which are opposite, and the front face is of a textured structure; in the first direction, the back surface comprises first type regions and second type regions which are alternately arranged, and the adjacent first type regions and second type regions are spaced by spacer regions; the surface of the silicon substrate corresponding to the first type region, the second type region and the spacer region is of a planar structure; the first type region comprises a first dielectric layer, a first doping layer, a first passivation layer and a first antireflection layer; the second type region comprises a second dielectric layer, a second doping layer, a second passivation layer and a second antireflection layer; the front surface is provided with a front surface floating emitter, and the back surface is provided with a metal electrode. According to the invention, the optical secondary internal refraction of the back surface is fully utilized, the recombination loss caused by the minority carrier transverse transmission process is reduced, and the electric shielding influence is reduced.

This invention discloses an electro-optic tuned filter based on a Si3N4 long-period waveguide grating and an electro-optic polymer composite structure. The filter forms a long-period grating by periodic etching on the surface of a silicon nitride waveguide, coupling the core mode with the cladding mode. An electro-optic polymer cladding is introduced above the waveguide, and the cladding refractive index is modulated by applying an electric field using the Pockels effect of the electro-optic polymer, thereby achieving electro-optic tuning of the filter's center wavelength. Simultaneously, a refractive index gradient structure is constructed by forming low-refractive-index side claddings on both sides of the electro-optic polymer cladding using a photobleaching process to optimize the mode distribution. Furthermore, the introduction of a SiO2 blocking layer effectively suppresses electro-optic modulation of the core mode, improving the filter's electro-optic tuning efficiency. This structural design significantly improves the filter's electro-optic tuning efficiency, achieving high-speed, high-efficiency electro-optic tuning while maintaining low loss, making it suitable for integrated photonic chips, optical communication systems, and spectral sensing applications.