Preparation method of WGM (whispering gallery mode) ZnO ultraviolet micro-laser for constructing electric pump

Abstract

The invention discloses a preparation method of a WGM (whispering gallery mode) ZnO ultraviolet micro-laser for constructing an electric pump. The method comprises the following steps of: preparing a ZnO micro bar single crystal by utilizing a gas phase transmission method or a hydrothermal method; then transferring a single ZnO micro bar onto p-type gallium nitride (GaN) with a buffer layer; processing the buffer layer so as to form a good-contact hetero junction between the ZnO micro bar and the p-type GaN; preparing a layer of insulation film on the surface of the hetero junction; etching out the surface of the ZnO micro bar by utilizing a reactive ion etching or photetching technology; transferring graphene onto the ZnO micro bar so as to enable the graphene to be in good contact with the ZnO micro bar; and finally preparing a metal electrode on the surface of the p-type GaN so as to constitute a complete graphene / n-type ZnO micro bar / p-type GaN hetero junction micro-laser. The micro-laser prepared by the method utilizes the high carrier concentration and high light transmittance of the graphene, so that high-quality ultraviolet laser output can be realized.

Description

technical field [0001] The present invention is designed to prepare high-quality single crystal ZnO microrods by gas phase transport method or hydrothermal method, separate a single ZnO microrod and combine it with p-type GaN with a buffer layer, and form a A pn junction with good contact, then sputtering a layer of inorganic transparent insulating film on its surface, then using reactive ion etching or photolithography to expose the surface of ZnO microrods, and finally transferring graphene to the surface of ZnO microrods as electrodes, and Electrodes are prepared on the surface of p-type GaN to form a complete device. The luminescent pn junction obtained by the above method and process flow can obtain high-quality electrically pumped ultraviolet whispering gallery mode laser light. Background technique [0002] Since Japanese scientists and American scientists successively discovered the ultraviolet radiation in ZnO films and nanowires, ZnO has become an ideal material f...

AI Technical Summary

Problems solved by technology

However, due to the opacity of the metal electrode, the laser will cause a lot of loss when it is emitted.

Using transparent conductive films (such as: indium tin oxide (ITO), zinc aluminum oxide (ZAO), etc.) as electrodes, although the light transmittance is enhanced, the carrier concentration is sacrificed

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