8results about How to "Good electrical contact" patented technology

This invention relates to the field of shock waveguide technology and discloses a spring electrode shock waveguide, comprising a slender carrier and a balloon. The space formed between the balloon and the carrier is an annular channel for fluid to enter and achieve inflation. First, the electrode in the guide tube is designed as a spring-type spiral structure and wound around the surface of the carrier, which can provide good electrical contact and make the electrode have excellent ductility, solving the problem of large stress on the electrode during the deformation of the balloon under fluid compression. Through the design of a first support mechanism and a second support mechanism, the first support mechanism is connected between two adjacent outer walls of the electrode, providing axial support force for the electrode, and the second support mechanism is connected between the inner wall of the balloon and the outer wall of the electrode, providing radial support force for the electrode. This reduces the pressure on the electrode when the internal pressure of the balloon increases and the balloon expands, further solving the stress problem of the electrode during the deformation of the balloon.

The present invention relates to an electro-discharge machining device, which comprises at least a carrier and an electro-discharge machining unit. The carrier is used to carry at least one workpiece to be machined. The electro-discharge machining unit comprises an electrode, a jig and a power supply unit. When the electro-discharge machining unit performs an electro-discharge machining process on a machining target area of the workpiece to be machined along a machining travel direction, a discharge section of the electrode moves relative to the machining target area of the workpiece to be machined. The present invention can improve the machining process, save the overall machining time and save the time required for replacing the electrode.

The present disclosure provides a connector, comprising an output port; the output port is fixed on a connecting structure and electrically connected with the connecting structure; a rotating structure and the connecting structure are coaxial and can rotate relative to the common axis, the rotating structure is provided with a first elastic pin group capable of rotating with the rotating structure, one end of the first elastic pin group is electrically connected with the output port through the connecting structure; a folding structure is rotationally connected with the rotating structure and can rotate relative to the rotating structure around a first axis, the folding structure is provided with a second elastic pin group capable of rotating with the folding structure, one end of the second elastic pin group is electrically connected with the other end of the first elastic pin group through an electrical connector, and the other end of the second elastic pin group is electrically connected with a wire harness. The connector of the present disclosure can rotate around the axis in the horizontal direction, and the folding structure can rotate around the vertical axis in the vertical direction, meeting the demand for angle adjustment in various complex connection scenarios.

The present disclosure relates to the technical field of infrared detection, and particularly relates to a non-cooled infrared detection pixel, a chip, a movement and equipment, the non-cooled infrared detection pixel comprises one or more interconnection structures connected with a readout circuit and an infrared sensing structure; wherein each interconnection structure comprises: a first aluminum connecting part, a tungsten structure and a second aluminum connecting part; wherein the tungsten structure is connected between the first aluminum connecting part and the second aluminum connecting part, and the first aluminum connecting part and / or the second aluminum connecting part comprises an aluminum layer and a titanium layer and / or a titanium nitride layer located on a side of the aluminum layer away from the readout circuit and / or a side of the aluminum layer facing the readout circuit, so that the interconnection structure can solve the problem of unstable noise caused by interconnection of the infrared detection chip, and can improve the process stability.

The present disclosure relates to the technical field of infrared detection, and particularly relates to a non-cooled infrared detection pixel, a chip, a movement and equipment, the non-cooled infrared detection pixel comprising a readout circuit, an infrared sensing structure and one or more first interconnection structures connecting the readout circuit and the infrared sensing structure; the first interconnection structure comprises a first connecting part, a first copper connecting part and a second copper connecting part, two ends of the first copper connecting part are connected with the first connecting part and the second copper connecting part respectively, the first connecting part is connected with the readout circuit, and the second copper connecting part is connected with a beam structure of the infrared sensing structure; wherein at least the second copper connecting part is located on a side of the beam structure facing the readout circuit, and the beam structure is in a flat plane, so that the interconnection structure can solve the problem of unstable noise caused by the interconnection of the infrared detection chip, and can improve the process stability.

This disclosure relates to the field of infrared detection technology, and more particularly to an uncooled infrared detection pixel, chip, core, and device. The uncooled infrared detection pixel includes a first interconnect structure and a second interconnect structure. The first interconnect structure includes a first aluminum connection portion, a first tungsten connection portion, a second aluminum connection portion, and a beam structure connected in sequence. The second interconnect structure includes a third aluminum connection portion, a second tungsten connection portion, a fourth aluminum connection portion, and an absorption sensing portion connected in sequence. The aluminum connection portion includes an aluminum layer, and at least one aluminum connection portion further includes a titanium layer and / or a titanium nitride layer, located on the side of the aluminum layer facing away from and / or towards the absorption sensing portion. The first interconnect structure connects the second interconnect structure and a readout circuit. The first aluminum connection portion in the first interconnect structure connects to the readout circuit. The second aluminum connection portion in the first interconnect structure and the third aluminum connection portion in the second interconnect structure connect to the beam structure. This interconnect structure can solve the noise instability problem caused by the interconnection of the infrared detection chip, and can reduce noise and improve process stability.

This utility model discloses a highly flexible LCD screen connection cable, comprising: a connection cable body, wherein shape memory metal sheets are disposed on the upper and lower parts of the connection cable body, which gives the connection cable body a highly flexible effect, thereby protecting the connection cable body when bent; and a connector, which is fixed to both ends of the connection cable body and connected to the connection cable body through a locking structure, for connecting the LCD screen. This utility model, by placing shape memory metal sheets on the upper and lower parts of the connection cable body, gives the connection cable body extremely high flexibility, effectively withstanding bending and protecting the internal wires from damage; the high flexibility characteristic is suitable for various installation environments, reducing the risk of damage caused by bending, thereby enhancing the durability of the connection cable.

This invention belongs to the field of non-precious metal electrocatalytic oxygen evolution materials, and discloses a nanocrystalline copper-manganese alloy for hydrogen production through water electrolysis, its preparation method, and its applications. A nanocrystalline copper-manganese alloy film with a thickness of 1 μm to 10 μm can be obtained by magnetron co-sputtering with a copper and manganese target. The nanocrystalline copper-manganese alloy contains 15%–80% Cu and 20%–85% Mn atomic percentages. Compared with conventional methods, the preparation method of this invention is simpler, and the prepared nanocrystalline copper-manganese alloy exhibits excellent electrocatalytic oxygen evolution performance, showing promising application prospects in fuel cells and water electrolysis for hydrogen production.