152 results about "Stress Problem" patented technology

Provided is an in-situ precleaning method for use in conjunction with epitaxial processes that utilizes temperatures at or below those typically utilized during the subsequent epitaxial deposition under pressure and ambient conditions suitable for inducing decomposition of semiconductor oxides, such as native oxides, from exposed semiconductor surfaces. The reduced temperature and the resulting quality of the cleaned semiconductor surfaces will tend to reduce the likelihood of temperature related issues such as unwanted diffusion, autodoping, slip, and other crystalline stress problems while simultaneously reducing the overall process time. The combination of pressure, ambient gas composition and temperature maintained within the reaction chamber are sufficient to decompose semiconductor oxides present on the substrate surface. For example, the reaction chamber may be operated so that the concentration of evolved oxygen within the reaction chamber is less than about 50%, or even less than 10%, of the equilibrium vapor pressure under the cleaning conditions.

The invention relates to a method for improving the bonding strength of a hard alloy and a diamond coating. The method is realized by the technical scheme that by adopting a double glow plasma surface alloying technology, taking a metal carbide forming element material or a composite material of metal carbide forming elements as a target, inert gases as protecting gases, as well as carbon-containing gases as precursors, a diffusion barrier layer is prepared on the surface layer of the hard alloy, and then the diamond coating is deposited on the hard alloy surface on which the diffusion barrier layer is prepared by using a chemical vapor deposition method. By the use of the diffusion barrier layer prepared by the method disclosed by the invention, the diffusion of Co element to the surface layer of the hard alloy can be effectively stopped, the damage to a hard alloy matrix due to a surface Co removing treatment method is avoided, and the interface stress problem introduced by a transition layer applying method due to new interface addition can be avoided, so that the bonding strength between the diamond coating and the hard alloy matrix can be greatly improved.

The invention relates to a main girder of a steel box composite girder with long cantilever arms for a single-plane cable stayed bridge. The two sides of a steel box girder in the middle of the main girder are respectively provided with a steel cantilever arm, and the steel box girder and the steel cantilever arms are connected by high strength bolts in bolting and welding modes; and the end part of each steel cantilever arm is provided with a longitudinal side beam, the tops of the steel box girder and the steel cantilever arms are paved with concrete bridge decks or cast-in-situ bridge decks, traffic lanes are arranged on the steel cantilever arms, the steel box girder is in a single-box single-chamber structure or multi-chamber structure, and a steel anchor box is arranged at the anchor point of a stayed cable. By adopting the steel box composite girder with long cantilever arms, the stress problems of the main girder, such as the torsion resistance and the like of the single-plane cable stayed bridge, are solved, and the horizontal dimension of the main girder is reduced; the main girder can be transported to the bridge location to carry out erection and installation, thereby solving the problem that the sectional dimension of the appearance is limited; and because most of the components of the main girder are prefabricated ones, the in-situ workload is reduced, and the construction quality and construction period can be effectively guaranteed. The main girder provided by the invention is specially adapted to the construction conditions in severe cold districts, for example, the main girder is applied to the construction of the Wusu Bridge in HeiXiazi Island of Heilongjiang Province, and achieves a good application effect.

The invention discloses a polishing pad for chemical mechanical planarization (CMP) and a manufacturing method thereof, and belongs to the technical field of a chemical mechanical planarization process. The polishing pad comprises a base layer on which a flexible nanometer brush layer is arranged. The nanometer brush polishing pad is prepared by the following steps of: preparing a template, coating polymer solution on the base layer and transferring a nanometer structure on the template to the base layer. Compared with the prior art, the polishing pad has the most outstanding advantage of having a flexible fiber structure; the polishing pad realizes material removal when in flexible contact with a polished surface, can solve the stress problem in the conventional chemical mechanism planarization technique to the largest degree, and is applicable to CMP under ultra-low pressure. Moreover, the polishing pad can overcome the defects of a relatively hard polishing pad such as scratch, over-polishing, butterfly, corrosion and the like, and a higher-quality polished surface can be obtained. The polishing pad has the advantages of simple manufacturing method, high controllability of the technical process and stable polishing performance.

The invention discloses a preparation method for wearable nickel phosphate function gradient plating coat, which comprises: with design idea for gradient material, using single-bath electroplating method, preparing the coat with phosphate content gradient varying by boosting current density gradually and controlling deposition time. This product has proper phosphate content gradient and thermal expansion coefficient to release the thermal stress problem and high bond strength and abrasion resistance. This method can replace current used technique.

The invention relates to an internal and external fin bayonet-tube type high temperature exchanger, which comprises a casing, a tube box which is connected on the casing, a closed head, a longitudinal baffle, a baffle plate, tube plates of an internal tube and an external tube, a tube side inlet and outlet pipe, a casing side inlet and outlet pipe, wherein one ends of the internal tube and the external tube are respectively fixed on the tube plates of the internal tube and the external tube, and the other ends are both free ends, the internal tube is a honeycomb duct whose two ends are open, and the external tube is a heat exchange tube whose one end is open, and the other end is closed, the internal and external walls of the external tube are respectively provided with an internal fin and an external fin to form an internal and external fin bayonet-tube heat exchanging unit, and the internal fin can relatively move to the internal tube. The exchanger is divided into a high temperature shell pass and a low temperature shell pass, the components of the two shell passes are respectively produced by high temperature-resistant material and common material, also can be produced by the same material. The internal walls of the casing, the longitudinal baffle and the tube plates of the internal tube and the external tube are provided with ceramic insulating layers, and fluid on two sides of a shell is crossly flow in reverse directions. The invention can increase the heat exchange efficiency and compactness of the exchanger, reduces production cost, and can overcome the thermal stress problem, and can be applied in high temperature condition.

A method is described for combining the diverse strengths of two materials in a tiled film construction. The first material provides a foundation of intersecting grid lines on a substrate and the second material is contained within the grid lines and has a valued property for a particular application. In a preferred embodiment, a tiled dielectric layer has improved low-k dielectric performance while avoiding film stress problems that can lead to delamination or cracking. CTE mismatch is overcome at the cost of an additional masking step. This tiling method and layered binary construction enable Cytop to be used as a high performance low-k dielectric on most substrates including semiconductor wafers and copper panels or foils.

The invention provides a stress support ring for a highfield superconducting solenoid coil, which is characterized in that: a support ring (4) consists of an inner aluminium alloy support ring (1) and an outer stainless steel support ring (2). The method comprises the following steps: slowly cooling the inner aluminium alloy support ring (1) to the liquid nitrogen temperature of 77K by cold nitrogen, heating the outer stainless steel support ring (2) to 300 DEG C, and directly sleeving the inner aluminium alloy support ring (1) into the outer stainless steel support ring (2) to form strong bonding force between the stainless steel ring and the aluminium alloy ring so as to form the support ring (4); slowly cooling a superconducting coil (3) to the liquid nitrogen temperature of 77K by cold nitrogen gas; and heating the support ring (4) to 200 DEG C, and directly assembling the superconducting coil (3) into the support ring (4). The stress support ring for the highfield superconducting solenoid coil can effectively inhibit the stress problem of the highfield superconducting coil and reduce quench hardening times of the superconducting coil and degradation of critical current density.

The invention relates to a flexible display module. The flexible display module is provided with a bent zone and an extending zone located at the end of the flexible display module. The flexible display module comprises a first superposed layer and a second superposed layer which are superposed, and the first superposed layer and the second superposed layer are non-fixedly connected in at least part of bent zone and are fixedly connected in the extending zone. On one hand, the first superposed layer and the second superposed layer are non-fixedly connected in the bent zone, so that when the flexible display module is bent, the first superposed layer and the second superposed layer can be freely bent in the bent zone, and the stress problem caused by a bonding material to the two superposedlayers during traditional bending is avoided; on the other hand, the first superposed layer and the second superposed layer are fixedly connected in the extending zone, and relative slippage of the superposed layers during bending is avoided. The whole flexible display module is not likely damaged in the bending process.

The invention relates to a semiconductor device manufacturing method based on double patterning. The method comprises the following steps: a semiconductor substrate and a mask layer located on the substrate are provided; a patterned photoresist layer is formed on the mask layer, wherein the patterned photoresist layer is photoresist cores separated through openings; a crosslinked top surface layer is formed on the patterned photoresist layer; a part of the photoresist layer sidewall is removed to thin the photoresist cores and reduce the critical size of the photoresist cores; spin coating is performed on the inner sidewall material layer, and the crosslinked top surface layer is covered; the etch back operation is performed on the inner sidewall material layer to form inner sidewalls on the photoresist cores; and the remaining crosslinked top surface layer and remaining photoresist cores are removed to form a double-patterned mask. The method of the invention is more simple, the stress problem caused by inner sidewall material chemical vapor deposition does not exist, and etch steps are reduced, so the cost is greatly reduced, and the product yield can be further improved.

A bond joint and process of bonding metal parts to one another to form seamless, hollow metal articles, particularly made from beryllium. Tooling is assembled to the parts, prior to hot pressing, to cause pressure to be applied to flanges that extend peripherally from the parts. The parts, assembled together with the tooling, are then subjected to hot isostatic pressing of the flanges at a temperature of about 1700° F. to 1750° F., and at a pressure of about 2000 psi to 2500 psi, for around 3 hours. The tooling surrounding the metal parts functions to limit the amount of compression of the flanges. Articles formed by this process are particularly useful in space flight applications because they are formed of a homogeneous material. This means that the articles can operate under high pressure despite being subjected to temperature cycling. Strength of the bond joint is enhanced because no filler metal is used. The absence of a filler metal also eliminates any thermal stress problems as a result of differences in coefficients of thermal expansion.

A method of forming the multi metal layers thin film has Ti sputtered on top surface of a substrate by PVD first. Then, Ti is transformed into TiN via CVD. Thus, by skipping the extra process steps of wafer cleaning and surface treating, the method not only solves the stress problems between two different metal layers but also improves the cycle time and particle performance for the production without any yield impact.

The invention discloses a method for manufacturing a deep-groove type super junction device. A back-seal of a substrate is changed from the structure of Poly+LTO into LTO+Poly so as to prevent back-seal LTOs exposed outside from being removed by wet method technology. During growth of a second N-type epitaxial layer, the LTOs still exist owing to the protection by Poly. Elements heavily doped in the substrate will not spread and will not lead to abnormity of doping of the second N-type epitaxial layer. Under a condition that stress problems will not occur, problems of doping spreading in the substrate in a high-temperature growing process of the second N-type epitaxial layer can be solved, and electrical properties such as reverse breakdown voltages of the deep-groove type super junction device can be effectively improved.

The invention relates to the technical field of display equipment, and discloses a lamp panel, a backlight module and a display device. The lamp panel comprises a flexible circuit board which comprises a first side face and a second side face; a light source which is positioned on the first side surface of the flexible circuit board; a supporting plate which is located on the second side face of the flexible circuit board and comprises a plurality of supporting parts capable of being spliced in sequence, each supporting part is of a strip-shaped structure, and the side, close to the flexible circuit board, of each supporting part is connected with the second side face of the flexible circuit board; wherein the flexible circuit board can be bent in the arrangement direction of the pluralityof supporting parts; when the flexible circuit board is in a flattened state, the sides, away from the flexible circuit board, of the multiple supporting parts are flatly spliced. When the flexible circuit board is in a bent state, the sides, away from the flexible circuit board, of the multiple supporting parts are disconnected. According to the lamp panel, the bending stress can be reduced, good attachment between the lamp panel and the back plate is guaranteed, the light source light mixing distance is not changed, and then the problem that the display brightness of the curved display panel is uneven due to the bending stress problem is solved.

The invention provides an assembly welding process for an ultra-long hollow shaft helical blade, which mainly comprises two assembly welding processes, namely the pre-heating welding of the helical blade on the ultra-long hollow shaft and the overlaying welding of the antiwear layer on the helical blade and a process of the overall annealing of overlaying welding. In the assembly welding processes, the small-pore tubing negative pressure siphoning type air supply combustion-supporting gas heating is utilized to solve the problem of preheating the high-carbon equivalent material; by evaluating the welding processes of a plurality of overlaying welding materials, the welding method, the welding material and the welding condition are finally determined; and the result meets the hardness(HRC54 to 06) of the antiwear layer required in the design, which is the necessary hardness obtained after annealing, and solves the new welding stress problem generated due to the overlaying welding after annealing. Moreover, the process has the advantages of easily obtained material, simple preparation, time conservation and labor conservation, and low cost.

The invention discloses a pressure sensor chip and a manufacturing method thereof. According to the technical scheme, designed is a new accommodation space formed by a first cavity, a second cavity and separation grooves, which are communicated mutually, and used for accommodating pressure sensitive components; and the outer walls of the accommodation space are provided with pressure leading holesto enable the accommodation space to be communicated with the external gas environment. The novel stress isolation structure can reduce the influence of environment stress on the performance of the pressure sensor chip, solves the lead wire protection problem, surface flexible glue coating problem and packaging stress and welding thermal stress problem of the pressure sensor chip in plastic package in the prior art, and can meet low-cost and high-efficiency all-mold plastic package requirements of a pressure sensor.

The embodiment of the invention provide electronic equipment. A foldable screen component comprises a foldable screen and a driving mechanism, wherein the foldable screen comprises a bending part, anda first end part which is located at one end of the foldable screen; the foldable screen is unfolded or folded through the bending part; the driving mechanism is connected with the first end part; when the foldable screen is in an unfolded state, the driving mechanism drives the first end part to get away from the bending part; and when the foldable screen is in the folded state, the driving mechanism drives the first end part to move toward the bending part. Through adoption of the electronic equipment, the stress problem of the folded screen in the unfolded state and the folded state is solved.

A method of fabricating a three-dimensional memory comprises steps of: forming a first stack formed by alternately stacking a first layer and a second layer on a substrate; forming a first channel hole penetrating through the first stack and reaching the substrate; forming a sacrificial portion in the first channel hole, and forming a cavity between the sacrificial portion and a sidewall and a bottom portion of the first channel hole; forming a second stack by alternately stacking a third layer and a fourth layer on the first stack; forming a second channel hole penetrating through the secondstack and reaching the sacrificial portion; and removing the sacrificial portion. The method for fabricating the three-dimensional memory provided by the present invention arranges the sacrificial portion, and forms the cavity formed between the sacrificial portion and the sidewall and the bottom portion of the channel hole, so that the material of the sacrificial portion can be made less, the sacrificial portion is easier to produce and remove, and the contamination and stress problems caused by the material of the sacrificial portion are solved.

The invention provides an LED epitaxial structure comprising a sapphire substrate, a low-temperature buffer layer, a non-doped GaN layer, a Si-doped n-type GaN layer, a light emitting layer, a p-type InN layer, a p-type AlGaN layer and a magnesium-doped p-type GaN layer, which are stacked in turn. By arranging the p-type InN layer between the light emitting layer and an electron blocking layer, the following effects are achieved: on one hand, the p-type InN material helps to solve the stress problem properly, a smooth energy band is more suitable for hole injection, the hole injection efficiency is increased, and the light efficiency of LED devices is increased on a macro level; and on the other hand, the p-type InN layer increases the distance between a GaN epitaxial layer and the electron blocking layer and effectively blocks the diffusion of Mg atoms in the electron blocking layer, the concentration of Mg impurity atoms in the light emitting layer is reduced, the crystal quality of the light emitting layer is improved to a certain degree, and the light efficiency of LED devices can be further improved. The invention further discloses a growing method of the LED epitaxial structure, which includes simple steps and is advantageous for industrialization production.

The invention provides a method for computing horizontal lateral stiffness of a pile top crown beam of a support pile of a cylindrical foundation pit. Through simplifying a cylindrical support system into an axial symmetry stress problem, establishing a computational formula of the horizontal lateral stiffness of the pile top crown beam of the support pile of the cylindrical foundation pit and computing to obtain the horizontal lateral stiffness of the pile top crown beam, the conventional elastic resistance method can be adopted to analyze and design a support structure of the cylindrical foundation pit, the deformation state and the stress state of the support pile can be more really reflected, the spatial effect of the cylindrical foundation pit is fully utilized, the tangible support of the cylindrical foundation pit is reduced and even avoided, the earth excavation of the foundation pit is facilitated, the engineering construction period and cost are saved, the energy consumption is reduced, and the method has larger economic benefit and social benefit.

The invention discloses a backside illuminated image chip module structure and a fabrication method thereof. The fabrication method comprises the following steps of: 1) backside illuminated (BSI) chip packaging, in which a non through silicon vias (TSV) wafer level packaging process is used for BIS chip package; 2) analog-digital converter/image single processor (ISP) chip package; 3) BSI chip and ADC/ISP chip lamination, in which an inversed packaging technique and a surface mounting technology are used for laminating the packaged BIS chip, a soft board and some auxiliary small devices on the ADC/ISP chip or a silicon-base substrate; and 4) lens module installation to finally form an image chip module. By the backside illuminated image chip module structure and the fabrication method thereof, the stress problem between the BSI chip and the soft board is solved, the volume of the whole module is shortened, the circuit design of the soft board is simplified, and the comprehensive cost of the module is reduced.