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Optical pumping nitride echo wall laser performing emission in single direction and preparation method thereof

A nitride and laser technology, applied in the laser field, can solve the problem of no laser direction output, achieve controllable etching rate, high precision, and reduce bending loss

Inactive Publication Date: 2016-02-17
NANJING UNIV OF POSTS & TELECOMM
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Problems solved by technology

[0003] However, a circular suspended microdisk or a hexagonal gallium nitride single crystal WGM laser is not good enough as an optical communication device or an integrated optical device, because it does not have a single laser direction output, and it is not easy to integrate with other optoelectronic devices. docking

Method used

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  • Optical pumping nitride echo wall laser performing emission in single direction and preparation method thereof
  • Optical pumping nitride echo wall laser performing emission in single direction and preparation method thereof
  • Optical pumping nitride echo wall laser performing emission in single direction and preparation method thereof

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Embodiment Construction

[0020] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0021] Taking the preparation of an optically pumped gallium nitride microlaser emitting in one direction with a diameter of 10 microns as an example, the preparation process is as follows:

[0022] Step 1: The purchased commercial GaN wafer on silicon substrate is ultrasonically cleaned with acetone, absolute ethanol and deionized water in sequence, and then blown dry with nitrogen gas; A silicon dioxide thin film layer 1 with a thickness of 1 micron is evaporated on the surface.

[0023] Step 2: After ultrasonically cleaning the silicon-based gallium nitride wafer with the evaporated silicon dioxide layer in sequence with acetone, absolute ethanol and deionized water, blow it dry with nitrogen gas; The upper surface of the silicon layer 2) was spin-coated with photoresist AZ5214 at a speed of 4000 rpm, and the spin coating time was...

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Abstract

The invention discloses an optical pumping nitride echo wall laser performing emission in the single direction and a preparation method thereof. Asymmetric nitride suspension thin film microcavities are prepared in nitride materials on a silicon substrate via the photoetching technology and the deep silicon etching technology. Echo wall die laser emitting in the single direction is obtained in the proper optical pumping condition.

Description

technical field [0001] The invention belongs to the field of laser technology, and relates to an optically pumped nitride whispering gallery laser emitting in one direction and a preparation method thereof. Background technique [0002] The laser can be divided into three types according to the cavity structure: the first type is the random laser formed by the random resonance of the light at the nanoparticle interface; the second type is the light in the one-dimensional micro-nano structure using the two end faces of the micro-nano wire as a cavity mirror Form the F-P laser produced by resonance. The former has a large scattering loss and has no fixed mode; the latter has a large end face loss, and it is not easy to obtain high-quality (Q) and low-threshold laser light. In view of this, the whispering gallery mode (WGM) laser formed by the microcavities such as larger microrods or microdisks by their total internal reflection provides a way for people to obtain high-qual...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/343H01S5/10
Inventor 朱刚毅金明俐陆良宇马少鹏王永进李欣
Owner NANJING UNIV OF POSTS & TELECOMM
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