The electro-absorption modulated
laser comprises a substrate, a buffer layer, a lower
waveguide layer, an
active layer region, an upper
waveguide layer and a cover layer from bottom to top in sequence, electromagnetic isolation regions are formed in the upper
waveguide layer and the cover layer, and a DFB
laser and an EAM modulator are formed on the two sides of each electromagnetic isolation region respectively; a
grating layer is arranged in an upper waveguide layer of the DFB
laser, one end of the
grating layer extends to an electromagnetic isolation area, a waveguide area is arranged between the other end of the
grating layer and the end of the DFB laser in a spaced mode, in the preparation process, the
coupling butt joint face of the DFB laser and the EAM modulator is etched, and then a passive InGaAsP body material is grown for the second time; compared with a traditional electro-absorption modulated laser, the problem of grating random truncation caused during cleavage is solved in a DFB laser area, so that generation of laser random phases is avoided; optimization design is carried out on a
butt joint coupling interface, so that the tidiness of the
butt joint interface is improved, and the phenomenon of
light scattering caused by an uneven interface is avoided; therefore, the laser has better structural characteristics, the yield of the laser is improved, the beam quality of the laser is improved, and the transmission distance of the laser is prolonged.