Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Electric pumping random laser of silicon zinc oxide nano-rod array

A zinc oxide nanorod, random laser technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problem of difficulty in increasing, and achieve the effect of reducing threshold voltage, mature preparation process, and enhancing light scattering

Inactive Publication Date: 2009-11-25
ZHEJIANG UNIV
View PDF0 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for ZnO thin films, it is difficult to increase its n r

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electric pumping random laser of silicon zinc oxide nano-rod array
  • Electric pumping random laser of silicon zinc oxide nano-rod array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] Such as figure 1 As shown, a silicon-based zinc oxide nanorod array electrically pumped random laser, on the front side of a silicon substrate 1, ZnO film 2, ZnO nanorod array 3, SiO 2 The thin film 4 and the translucent electrode 5 are deposited with an ohmic contact electrode 6 on the back of the silicon substrate.

[0029] Take the following process steps to prepare figure 1 The electrically pumped random laser shown:

[0030] 1) Clean n-type, resistivity 0.005 ohm cm, size 15×15mm 2 , a silicon chip with a thickness of 525 microns, and then put it into the cavity of a magnetron sputtering device, using a Zn sheet with a purity of 99.99% as the target, and the distance between the target and the substrate is 7cm; Draw to 5×10 -3 Below Pa, then pass high-purity Ar and O 2 gas, O 2 The flow ratio of Ar and Ar is 1:2, and the working pressure in the chamber is controlled to 10Pa; during sputtering, the power is about 120W, the deposition temperature is 300°C; the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an electric pumping random laser of silicon zinc oxide nano-rod array, wherein a ZnO film, a ZnO nano-rod array, a SiO2 film and a semitransparent electrode are sequentially formed from bottom to top on the front side of a silicon substrate, and an ohmic contact electrode is deposited at the back side of the silicon substrate. The invention further discloses a preparation method of the electric pumping random laser, including the followings: the ZnO film is formed on n-type silicon chip after cleaning by using magnetron sputtering method; the ZnO nano-rod array is formed on the ZnO film by using chemical water bath deposition method, and heat treatment is carried out under air atmosphere; the SiO2 film is formed on the ZnO nano-rod array by using sol-gel method; and the semitransparent electrode is spattered on the SiO2 film, and the ohmic contact electrode is spattered on the back side of the silicon substrate. The electric pumping random laser of silicon zinc oxide nano-rod array in the invention has simple structure, and ultraviolet electric pumping random laser from ZnO nano-rod array can be obtained under the condition of enough forward bias (Si being connected with the cathode).

Description

technical field [0001] The invention relates to a silicon-based zinc oxide nanorod array electrically pumped random laser. Background technique [0002] Zinc oxide (ZnO) is a wide bandgap compound semiconductor material with a direct bandgap of 3.37eV and an exciton binding energy up to 60meV at room temperature, and is expected to become the basic material for short-wavelength light-emitting devices. Since the room temperature optically pumped ultraviolet laser of ZnO nanowires was reported in 2001, people have aroused great interest in the research of ZnO nanolaser devices. So far, people have obtained room temperature optically pumped lasers for almost all micron and nanostructured ZnO. [0003] But the optically pumped laser is not enough to be used in practice, so the study of ZnO electrically pumped laser is a work of great theoretical and practical value. There are still very few reports on ZnO electrical pumping lasers (regular lasers or random lasers), and the exi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/30H01S5/042H01S5/06
Inventor 马向阳潘景伟陈培良杨德仁
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com