The application relates to the technical field of lasers, in particular to a preparation method of an addressable
silicon-based integrated nanometer
laser and the
laser, which comprises the following steps: sequentially growing a
transition layer and an epitaxial layer on a
silicon wafer substrate; obtaining a plurality of grooves on a P-face
contact layer through photoetching and developing, growing a
metal layer in the grooves, and obtaining a P-face
electrode; leaving a gap between the P-face electrodes,
etching the epitaxial layer downwards along the gap, over-
etching to an N-face
contact layer, and forming an N-face
electrode through hole; and firstly depositing
TiN in the N-face
electrode through hole, then depositing
metal tungsten, and filling the N-face electrode through hole. By growing a
laser epitaxial structure on the
silicon substrate, combining a process technology
route of a 65nm node of a silicon-based
integrated circuit, a brand-new process
route of a silicon-based nanometer laser is given, and the compatibility of the laser with
CMOS front-end and back-end processes is exhibited.