101 results about "Nanolaser" patented technology

The present disclosure relates to a nanolaser generator using a transparent graphene electrode, a method for manufacturing the same, and a single nanopillar LED using the same. The nanolaser generator includes a microdisk resonator, a protruding dielectric ring provided to surround a boundary surface of the microdisk resonator, an external dielectric ring provided at an outer side of the microdisk resonator, and a transparent graphene electrode provided at upper surfaces of the microdisk resonator, the protruding dielectric ring and the external dielectric ring. Therefore, the processes required for generating a nanolaser may be reduced by half in comparison to a general technique, and a nanolaser may be generated just with a micro current.

The invention relates to a preparation method of a nanoscale laser array, in particular to a preparation method of a nano laser array using perovskite nanowires in directional alignment as a gain medium and a resonant cavity. The one-dimensional nanoscale perovskite nanowires in directional alignment are used as the gain medium and the resonant cavity, the perovskite nanowires in directional alignment in a plane are successfully prepared, the nanoscale laser array is realized, and the problem of a nanoscale light source in a high-density photon integration system is effectively solved. The chemical formula of the perovskite nanowires in directional alignment is CsPbX3, the diameter is 200 to 800 nm, and the length is 10 to 80 microns. In a synthetic method, CsX powder and PbX2 powder are taken as raw materials, annealed M-Plane sapphire is taken as a substrate, and the nanoscale laser array is prepared by adopting a chemical vapor deposition method. The preparation method also has extremely important significance for realizing the high-density photon integration system.

The present invention provides a preparing method of ZnO quantum dot. Firstly, processing surface treatment to a substrate, then forming a layer nano-sphere assembled by itself by czochralski method in deionized water, the nano-sphere is used as a template for preparing ZnO quantum dot; further, depositing a layer ZnO film which thickness is 5nm-50nm by electron beam evaporation under the conditions of temperature between 25-100 DEG C, 10<-4>-10<-6> Torr vacuum; finally, dipping in toluol, and vibrating 2-5 min by ultrasonic to remove the nano-sphere in the template. The ZnO quantum dot prepared by the method has large growth area, regular arrangement, even distribution. The preparing method simply, economically and effectively produces ZnO quantum dot having larger range, and order. The ZnO oxide semiconductor energy gap is wide, direct wide band gap is transmitted, and exciton binding energy is large, the ZnO quantum dot material becomes expectations of high quantum dot laser and nan0-laser by adding the quantum confinement effect of the quantum dot.

The invention, which belongs to the laser field, relates to a nano-cavity laser of a molecule-doped thin film layer with electroexcitation. The laser comprises a p-surface electrode, a substrate, an electroluminescent medium, a molecule-doped thin film layer, an n-surface electrode, and a nanowire structure. The electroluminescent medium, the molecule-doped thin film layer, the n-surface electrode, and the nanowire structure are arranged on the surface of the substrate successively; and the underneath of the substrate is plated with the p-surface electrode. According to the invention, surface plasma is provided by a metal electrode; an electric field with strong localization is formed by utilizing a mixing structure of metal, low-dielectric constant thin film layer and electroluminescent medium. Multi-energy-level molecules are doped in an insulating layer; multi-energy-level molecule system is excited to absorb a photon; and transition is formed and another photon is emitted. Direct coupling is carried out on the emitted photon, so that surface plasmon is formed; and the surface plasmon is transmitted and lased along the metal surface of the nanowire. According to the invention, present problems including difficulty in electroexcitation, great difficult in making technology, high cost, and difficulty in promotion are effectively solved.

The invention discloses a surface plasma enhancement-based nano laser, belongs to the fields of micro-nano optics and photoelectronics, and particularly relates to a nanowire laser. According to the solving scheme, an insulating medium with a certain thickness is firstly sputtered on the surface of a zinc oxide nanowire as a buffer layer, so that the insulating medium evenly coats the surface of the nanowire; and a metal film layer is sputtered, and evenly coats the surface of an insulating layer to form the surface plasma laser of an annular mechanism of the nanowire/insulating medium/metal film. The surface plasma enhancement-based nano laser has the advantages of being small in volume, simple in structure, high in reliability and the like; and a bran-new technical approach is provided for improvement of the performance of the nano laser.

A metal-insulator-metal (MIM) waveguide structure for nano-lasers or optical amplifiers is described. The structure comprises a substrate on which are supported first and second metal layers which form electrical contacts for the waveguide. A narrow ridge of low-band gap semiconductor core, which forms the optical gain material, is sandwiched between the two metal layers. The semiconductor core is surrounded on both sides by a low refractive index material which is also sandwiched between the two metal layers. First and second layers of thin higher-band gap doped semiconductor material are provided between the respective first and second metal layers and the low-band gap semiconductor core and the low refractive index material. The optical mode that propagates down this waveguide is localised in the centre of the waveguide structure where the narrow ridge of low-band gap semiconductor core is.

The invention discloses a preparation method of a diffusion samarium-iron-nitrogen magnet with high coercivity and high magnetic energy product, which comprises the following steps: mixing heavy rareearth metal and transition element metal particles, carrying out high-energy ball milling on the mixed particles to form a nanoscale particle mixture, and mixing the mixture with an organic solvent toform a diffusion source mixed solution; perforating the surface of the samarium-iron-nitrogen magnet by using femtosecond to nano laser pulses to form a coal ball-shaped magnet; immersing the coal ball-shaped magnet into the diffusion source mixed solution, taking out the magnet, and presintering at low temperature under the protection of nitrogen to obtain a magnet with a diffusion source coating inside and on the surface of the magnet; and finally, carrying out heat treatment on the magnet under argon protection and a strong magnetic field, and obtaining the samarium-iron-nitrogen magnet with high performance. Under the condition that a main phase in the samarium-iron-nitrogen magnet is not damaged, the interior and the surface of the magnet are coated with the diffusion layers throughthe laser perforation processing technology, doping elements are introduced through three-dimensional diffusion, the anisotropy and the magnetic performance of the samarium-iron-nitrogen magnet are improved, and the process is simple, easy to operate and suitable for batch production.

The invention discloses a bowknot nanometer antenna device based on vanadium dioxide phase change dynamic adjustment. The bowknot nanometer antenna device comprises a vanadium dioxide film formed on asubstrate; a dielectric film formed on the vanadium dioxide film; and a metal antenna layer consisting of bowknot metal units which are periodically arranged on the dielectric film; each bowknot metal unit is composed of two structures which are symmetrical in the mirror direction. Furthermore, the invention also discloses a preparation method of the bowknot nanometer antenna device and a methodfor adjusting the resonant wavelength of the nano antenna. According to the invention, the resonance wavelength can be dynamically regulated and controlled in a near-infrared large wavelength range, and the bowknot nanometer antenna device can be applied to the fields of dynamically adjustable higher harmonics, dynamically adjustable molecular fluorescence, dynamically adjustable Raman scattering,dynamically adjustable nano laser and the like.

The invention relates to the technical field of composites, in particular to an upconverting nanoparticle and graphene quantum dot composite capable of realizing near-infrared photodynamic therapy andfluorescence imaging simultaneously and a preparation method. According to the prepared composite, graphene quantum dots can be bonded together with upconverting nanoparticles, the composite is homogeneously spherical, and particle size is about 35 nm. Absorption spectra of the graphene quantum dots in the composite can overlap well with emission spectra of the upconverting nanoparticles, so thatenergy transfer is realized between the two materials. When the two materials make contact, the upconverting nanoparticles can absorb near-infrared light and emit ultraviolet light and visible lightunder irradiation of 980nm laser, the emitted ultraviolet light and visible light can be absorbed by the graphene quantum dots and subjected to a reaction with ambient oxygen, singlet oxygen with cytotoxicity is generated, and red light is emitted, so that photodynamic therapy and fluorescence imaging under near-infrared excitation are realized.

The invention discloses a full silicon quantum dot nano laser and a manufacturing method thereof. The nano laser is excited by optical pumping, uses full silicon quantum dots as working substance, adopts two-dimensional photonic crystals for resonant mode selection and generates laser, uses nanosecond pulse laser beams for processing and has about 100[mum] of the line diameter size of the main body, so the nano laser is the laser having the smallest volume at present; the light exit power of the laser can be up to 1 milliwatt, the light exit wavelength can be adjusted in the range from 570nm to 760nm, and the manufactured full silicon quantum dot nano laser is good in structural stability and repeatability, has outstanding light gain in the aspect of light emitting property under shortwave laser pumping, and also has excellent coherence. The manufacturing cost is low and large-scale industrial production can be easily realized.

The invention provides a preparation method of an epitaxial material of a silicon-based nanometer laser array with electrically-injected long wavelength. The preparation method comprises the steps ofS1, fabricating a nanoscale pattern mask on a single-crystal silicon substrate by a plasma enhanced chemical vapor deposition (PECVD) method, a dry etching technology and a wet etching technology; andS2, sequentially fabricating an InP low-temperature nucleation layer, an n-InP high-temperature buffer layer, a dislocation blocking layer, an n-type limitation layer, a lower waveguide layer, a quantum-well active region, an upper waveguide layer, a p-type limitation layer and a p-type ohmic contact layer on the pattern mask by a metal organic chemical vapor deposition (MOCVD) method. By optimizing a two-step growth method and a selection region epitaxial condition, transmitting dislocation of a growth window region is blocked on a side wall of a silicon dioxide mask by a nanoscale silicon dioxide mask pattern substrate structure with large height-to-width ratio and fabricated on a silicon wafer; and meanwhile, a stress superlattice structure is used as a dislocation blocking structure,so that the dislocation density of an upper-layer InP material is further reduced.

The invention discloses an atomized acid shaft flow simulation platform for gas injection development of a fracture-cavity type oil reservoir. The atomized acid shaft flow simulation platform mainly comprises a double-flow venturi atomization generation device, a shaft flow simulation device and an atomization evaluation device. The atomization generation device comprises an air path system, a liquid path system and an atomization generator; the airpath system comprises an air compressor, an air throttle valve and an air pressure gauge; the liquid path system comprises a high-pressure acid-proof pump, a liquid throttle valve and a liquid pressure gauge; the simulation wellbore is used for being connected with the double-flow venturi atomization generation device and comprises a vertical wellbore, a horizontal simulation stratum and an effusion collecting device. The observation system comprises a nano laser particle size analyzer. The invention also discloses a working method of the atomized acid shaft flow simulation platform for gas injection development of the fracture-cavity type oil reservoir. The simulation platform can be applied to an oil field site, the injection displacement is controlled through the air path system and the liquid path system, the high acid liquor atomization rate is kept according to site construction requirements, the acidification effect of the fracture-cavity type oil reservoir is improved and effective communication of the fracture-cavity type storage and collection unit bodies can be realized.

A multi-cavity coupled enhanced nano plasma laser array and a preparation method thereof belong to the field of optical technology. The multi-cavity coupled enhanced nano plasma laser array comprisesa semiconductor substrate, semiconductor gain resonant cavities, an insulating dielectric layer (3), and a metal wrapping layer, wherein an semiconductor gain resonant cavity array is disposed on thesemiconductor substrate, that is, the insulating dielectric layer is disposed on the surfaces of the semiconductor substrate and the semiconductor gain resonant cavity array, and wraps each semiconductor gain resonant cavity; the insulating dielectric layer also maintains the pattern of the semiconductor gain resonant cavity array, namely forms a semiconductor gain resonant cavity-insulating dielectric layer array; and the metal wrapping layer is disposed on the insulating dielectric layer and also fills an array pattern on the insulating dielectric layer. The surface plasma modes (evanescentwave) between adjacent resonant cavities can be coupled to each other, thereby improving the performance of the nano laser and realizing the ultra-high density plasma laser area array output.

The invention discloses a one-dimensional photonic crystal optical micro-cavity based on a waveguide comprising low-refractive-index cores. The one-dimensional photonic crystal optical micro-cavity is manufactured on the waveguide comprising the low-refractive-index cores, the waveguide is high in refractive index contrast, the one-dimensional photonic crystal optical micro-cavity comprises a region with a gradient lattice constant and regions with periodic lattice constants, the region with the gradient lattice constant is positioned in the center of a micro-cavity, the lattice constant of the region with the gradient lattice constant is symmetrically and linearly increased from the middle of the micro-cavity to two sides of the micro-cavity, and the regions with the periodic lattice constants are positioned on two sides of the region with the gradient lattice constant. The one-dimensional photonic crystal optical micro-cavity has the advantages that model are extremely small in size V owing to the characteristic that the light intensity is rapidly increased due to continuity of an electric displacement vector at interface positions of the low-refractive-index slit or hollow cores of the waveguide, and gradient transition and matching among the models are realized owing to the region with the gradient lattice constant in the center of the micro-cavity, so that an ultrahigh quality factor Q value is obtained; the one-dimensional photonic crystal optical micro-cavity is simple in structure and compact in size, can be processed by a CMOS (complementary metal oxide semiconductor) technology, is easy to integrate and expand, and can be conveniently manufactured at a low cost; and other low-refractive-index materials can be planted in the slits or hollow cores in the micro-cavity, and the one-dimensional photonic crystal optical micro-cavity can be widely applied to fields of nanometer laser devices, biochemical sensing, optical micro-fluid, optical micro-machines and the like.

Provided is a method for rapidly and smoothly removing a magnesium alloy micro-arc oxide film layer. A nanometer laser device with a laser wavelength of 1.064 is adopted to perform laser removal on the magnesium alloy micro-arc oxide film layer, a laser output power is 6-18 W, a laser frequency is 25-100 KHz, a scanning mode is repeated laser beam scanning of the micro-arc oxide film layer, scanning directions of every two subsequent times of scanning are perpendicular to each other, a trace interval is 0.05-0.09 mm, and a scanning speed is 510-2000 mm/s. By means of the method, a laser outputpower is reduced; and by setting the laser scanning mode, trace interval and scanning speed, the micro-arc oxide film layer can be sufficiently removed, a magnesium alloy surface can be prevented from ablation, the quality of the magnesium surface subjected to laser removal is ensured, the film layer removal speed is high, film layer removal is thorough, the roughness of the magnesium alloy surface subjected to film layer removal does not exceed 3.2, and the requirement for removal of the magnesium alloy micro-arc oxide film layer is met.

The invention discloses a Gaussian-type metal semiconductor resonant cavity for a nano laser. The resonant cavity is a double-concave semiconductor resonant cavity composed of a semiconductor materialcovered witha metal shell layer, and has a resonant cavity structure in the shape of a Gaussian beam. The invention provides a novel Gaussian-type resonant cavity structure to reduce the surface plasmon loss of a metal semiconductor cavity. The circular arc-shaped reflecting surface of the resonant cavity can concentrate the resonant mode at the center of the cavity, so that the field distribution of the resonant mode is far away from the metal sidewall, thereby effectively reducing the metal loss. The electric field component perpendicular to the metal sidewall can be reduced by the curvedsidewall of the resonator, which can further suppress the surface plasmon loss. Reasonable design of reflection surface and curved sidewall of the resonator reflector can effectively reduce the threshold current of excitation resonator, and provide technical reference for the resonator design of nano-laser and related fields such as photonic integrated circuit, optical interconnection and so on.

The invention relates to an array light source light splitting device and method. The device comprises a seed source for inputting signal light, fiber amplifiers connected with the seed source, and a light splitter connected with the fiber amplifiers, wherein the light splitter is provided with N paths of fibers, the N is a natural number, and the signal light of the seed source is split by the light splitter into N paths which are outputted. According to the device, the signal light of the seed source is split by the light splitter into the N paths which are outputted, the N paths of signal light are amplified through the amplifier of each branch for power amplification, and multiple paths of signal light are outputted; repetition frequency of 1550 nanometer laser can reach megahertz, so the laser has a relatively high water absorption coefficient, when the laser in with the wave band radiates to eyes, an eye damage threshold is relatively high, but the wave band laser of the device has eye safety characteristics; a synchronization work mode can be employed in a light source, and the device has wide application prospects in the automatic driving and 3D scanning field.

The invention discloses a preparation method of laser pulse perforation assisted diffusion high-coercivity neodymium iron boron, which comprises the following steps: smelting Dy and other heavy rare earth metals and Al and other low-melting-point metals according to an atomic ratio to form a mother alloy, carrying out high-energy ball milling on the mother alloy to form nano-scale to micron-scalepowder, and mixing the powder with an organic solvent to form a diffusion source mixed solution; perforating the surface of the neodymium-iron-boron magnet by using femtosecond to nano laser pulses toform a coal ball-shaped magnet; immersing the coal ball-shaped magnet into the diffusion source mixed solution, taking out the magnet, and presintering at low temperature under the protection of nitrogen to obtain a magnet with a diffusion source coating inside and on the surface of the magnet; and finally, carrying out heat treatment on the magnet under argon protection and a strong magnetic field to obtain the neodymium-iron-boron magnet with high coercive force. According to the method, the specific surface area of the coating layer and the magnet is increased, the heavy rare earth elements are subjected to three-dimensional diffusion in the magnet, the distribution uniformity of the heavy rare earth elements in the magnet is effectively improved, the coercive force of the neodymium-iron-boron permanent magnet is improved, and the method is simple in process, easy to operate and suitable for batch production.

The invention relates to a method for manufacturing nanometer laser device arrays. By the aid of the method, problems of complicated process and low flexibility and controllability in the prior art can be solved. The method is based on multilayer spherical shell nanometer optical and plasma mode interaction mechanisms, and multilayer spherical shell laser devices are combined with electrorheological effects to be arrayed and are solidified to obtain the nanometer laser device arrays. The method has the advantages that the laser devices are simple in structure, a manufacturing process is simple, fixing substrates for the structures of the nanometer laser devices can be omitted, the method for manufacturing the nanometer laser device arrays is simple and is high in controllability, the arrays can be flexibly distributed, the shapes of the integral devices can be flexibly selected, and the like.

The invention discloses a biconcave metal semiconductor resonant cavity for a nano laser. The biconcave metal semiconductor resonant cavity comprises a semiconductor layer, an insulating layer and a metal layer which are sequentially arranged from inside to outside, wherein the semiconductor layer comprises an InGaAs core layer, a p-doped InP material layer, an n-doped InP material layer and a p-doped InGaAs top contact layer; the lower layer of the InGaAs core layer is a p-doped InP material layer, the upper layer of the InGaAs core layer is an n-doped InP material layer, and a p-doped InGaAstop contact layer is arranged on the n-doped InP material layer; the insulating layer is made of an insulator material SiO<2>, and wraps the side wall and the end surface of the semiconductor layer;and the metal layer is made of a metal material Ag, wraps the insulating layer and is in contact with the semiconductor layer at the top. According to the invention, the radiation loss is reduced, themetal surface plasmon loss is reduced, the structure is simple, the manufacturing is easy, and the threshold current for exciting the resonant cavity is effectively reduced.