A Gaussian-type metal semiconductor resonator for nano-lasers

Abstract

The invention discloses a Gaussian-type metal semiconductor resonant cavity for a nano laser. The resonant cavity is a double-concave semiconductor resonant cavity composed of a semiconductor materialcovered witha metal shell layer, and has a resonant cavity structure in the shape of a Gaussian beam. The invention provides a novel Gaussian-type resonant cavity structure to reduce the surface plasmon loss of a metal semiconductor cavity. The circular arc-shaped reflecting surface of the resonant cavity can concentrate the resonant mode at the center of the cavity, so that the field distribution of the resonant mode is far away from the metal sidewall, thereby effectively reducing the metal loss. The electric field component perpendicular to the metal sidewall can be reduced by the curvedsidewall of the resonator, which can further suppress the surface plasmon loss. Reasonable design of reflection surface and curved sidewall of the resonator reflector can effectively reduce the threshold current of excitation resonator, and provide technical reference for the resonator design of nano-laser and related fields such as photonic integrated circuit, optical interconnection and so on.

Description

technical field [0001] The invention belongs to the field of semiconductor lasers, in particular to a Gaussian metal semiconductor resonant cavity used for nanometer lasers. Background technique [0002] Metal semiconductor lasers are widely used in semiconductor photonic integrated circuits, optical communications and other fields due to their small size and low excitation energy. [0003] At present, researchers have proposed many metal-semiconductor resonators with different structures, but the traditional rectangular metal-semiconductor resonators have large surface plasmon losses, and the threshold current required to excite the laser is very large, making it difficult to achieve lasing. . Contents of the invention [0004] The object of the present invention is to provide a Gaussian metal-semiconductor resonant cavity used for a nano-laser, and improve the energy excitation efficiency of the metal-semiconductor resonant cavity. [0005] The technical solution for r...

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Problems solved by technology

[0003] At present, researchers have proposed many metal-semiconductor resonators with different structures, but the traditional rectangular metal-semiconductor resonators have large surface plasmon losses, and the threshold current required to excite the laser is very large, making it difficult to achieve lasing.

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