ZnO and GaN-combined ZnO-based end surface transmitting laser and preparation method thereof

Abstract

The invention belongs to the technical field of semiconductor light-emitting devices and preparation thereof and relates to a ZnO and GaN-combined ZnO-based end surface transmitting laser and a preparation method thereof. A chip of the ZnO and GaN-combined ZnO-based end surface transmitting laser comprises a substrate as well as a GAN epitaxial layer, a current lower limiting layer, a ZnO base material light-emitting layer and an upper electrode which are prepared on the substrate. The ZnO and GaN-combined ZnO-based end surface transmitting laser is characterized in that the substrate can be a conductive GaAs crystal slice, a conductive InP crystal slice, a conductive SiC crystal slice or a conductive GaN crystal slice, the conducting type of the substrate is the same as that of the GAN epitaxial layer, a lower electrode is prepared below the substrate, a front reflecting mirror and a back reflecting mirror are formed from a front end surface and a back end surface split by the chip, and the devices emit light through the front reflecting mirror and the back reflecting mirror. As a controllable resonant cavity of the ZnO base laser is prepared, the threshold current of the laser can be reduced, the output power of the devices is improved, the direction of laser is better, and therefore, the application range of the devices is further expanded.

Description

technical field

[0001] The invention belongs to the technical field of semiconductor light-emitting devices and their preparation, in particular to a ZnO-based end surface emitting laser combined with ZnO and GaN based on ZnO-based materials and a preparation method thereof. Background technique

[0002] GaN-based materials have been widely used in the field of solid-state lighting and information. The energy band gap and lattice constant of ZnO and GaN are very close, and they have similar photoelectric properties. However, compared with GaN, ZnO has a higher melting point and exciton binding energy (60meV), low epitaxial growth temperature, low cost, and easy etching, which makes the post-processing of the chip easier and makes the device preparation more convenient. etc. Therefore, the successful development of ZnO-based light-emitting tubes and lasers may replace or partially replace GaN-based optoelectronic devices, and will have greater application prospects, especia...

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