ZnO and GaN-combined ZnO-based end surface transmitting laser and preparation method thereof

A surface-emitting laser and base-end technology, which is applied to the device for controlling the output parameters of the laser, the structure of the optical resonant cavity, etc., can solve the problems of low output power of the laser, poor laser directivity, and no controllable resonant cavity.

Inactive Publication Date: 2011-02-16
EPITOP PHOTOELECTRIC TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, since none of these light-emitting devices has a controllable resonant cavity, even lasing is generally caused by the random scattering resonant cavity or the microcavity mode selection effect of ZnO nanocrystal grains, so the output power of the laser is very low, and the direction of the laser sex is not good

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  • ZnO and GaN-combined ZnO-based end surface transmitting laser and preparation method thereof
  • ZnO and GaN-combined ZnO-based end surface transmitting laser and preparation method thereof
  • ZnO and GaN-combined ZnO-based end surface transmitting laser and preparation method thereof

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Embodiment 1

[0041] ZnO based end surface emitting lasers combining p-type ZnO and n-type GaN without current lower confinement layer. This ZnO-based end surface emitting laser combined with p-type ZnO and n-type GaN without a current lower confinement layer is shown in the appendix image 3 . The preparation process is as follows, taking the SiC crystal substrate as an example, using the n-type SiC crystal substrate as the substrate, and growing 1 to 10 microns of n-type ( Such as doped with Si)GaN epitaxial layer 2, the carrier concentration is 10 18 ~10 20 / cm 3 , and then adopt the MOCVD method, especially the special ZnO film growth MOCVD equipment described in No. 02100436.6 and ZL200410011164.0 patents to directly prepare the p-type ZnO-based material light-emitting layer 4 on the n-type GaN epitaxial layer 2, and the p-type ZnO-based material The thickness of the light-emitting layer 4 is 10 nanometers to 5 micrometers. The p-type preparation technology and p-type doping method...

Embodiment 2

[0043] ZnO based end surface emitting lasers combining ZnO and GaN. This combined ZnO and GaN ZnO based end surface emitting laser is shown in the attached figure 2 , the chip is sequentially composed of substrate 1, p-type GaN epitaxial layer 2 prepared on substrate 1, Zn 1-x Mg x O (the value of x can be set between 0.05 and 1) the current lower confinement layer 3, the n-type ZnO-based material light-emitting layer 4 prepared on the current lower confinement layer 3, the upper electrode 6 prepared on the ZnO-based material light-emitting layer 4 The structure is characterized in that: the substrate 1 is a conductive GaAs crystal sheet, a conductive InP crystal sheet, a conductive SiC crystal sheet or a conductive GaN crystal sheet, and its conductivity type is the same as that of the GaN epitaxial layer 2. A lower electrode 5 is prepared under the bottom 1; a front reflector 8 and a rear reflector 9 are formed by the cleaved front and rear end faces of the chip, and the ...

Embodiment 3

[0046] ZnO based end surface emitting lasers combining p-type ZnO and n-type GaN. This combination of p-type ZnO and n-type GaN ZnO-based end-surface-emitting lasers is still in the appendix figure 2 . The chip is sequentially composed of substrate 1, n-type GaN epitaxial layer 2 prepared on substrate 1, and GaN epitaxial layer prepared on epitaxial layer 2. 2 o 3 Or the n-type AlGaN current lower confinement layer 3, the p-type ZnO-based material luminescent layer 4 prepared on the current lower confinement layer 3, and the upper electrode 6 prepared on the ZnO-based material luminescent layer 4, characterized in that: the substrate 1 is conductive GaAs crystal sheet, conductive InP crystal sheet, conductive SiC crystal sheet or conductive GaN crystal sheet, its conductivity type is the same as that of GaN epitaxial layer 2, and a lower electrode 5 is prepared under the substrate 1 at the same time; The front and rear end faces of the chip cleavage form the front reflecto...

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Abstract

The invention belongs to the technical field of semiconductor light-emitting devices and preparation thereof and relates to a ZnO and GaN-combined ZnO-based end surface transmitting laser and a preparation method thereof. A chip of the ZnO and GaN-combined ZnO-based end surface transmitting laser comprises a substrate as well as a GAN epitaxial layer, a current lower limiting layer, a ZnO base material light-emitting layer and an upper electrode which are prepared on the substrate. The ZnO and GaN-combined ZnO-based end surface transmitting laser is characterized in that the substrate can be a conductive GaAs crystal slice, a conductive InP crystal slice, a conductive SiC crystal slice or a conductive GaN crystal slice, the conducting type of the substrate is the same as that of the GAN epitaxial layer, a lower electrode is prepared below the substrate, a front reflecting mirror and a back reflecting mirror are formed from a front end surface and a back end surface split by the chip, and the devices emit light through the front reflecting mirror and the back reflecting mirror. As a controllable resonant cavity of the ZnO base laser is prepared, the threshold current of the laser can be reduced, the output power of the devices is improved, the direction of laser is better, and therefore, the application range of the devices is further expanded.

Description

technical field [0001] The invention belongs to the technical field of semiconductor light-emitting devices and their preparation, in particular to a ZnO-based end surface emitting laser combined with ZnO and GaN based on ZnO-based materials and a preparation method thereof. Background technique [0002] GaN-based materials have been widely used in the field of solid-state lighting and information. The energy band gap and lattice constant of ZnO and GaN are very close, and they have similar photoelectric properties. However, compared with GaN, ZnO has a higher melting point and exciton binding energy (60meV), low epitaxial growth temperature, low cost, and easy etching, which makes the post-processing of the chip easier and makes the device preparation more convenient. etc. Therefore, the successful development of ZnO-based light-emitting tubes and lasers may replace or partially replace GaN-based optoelectronic devices, and will have greater application prospects, especia...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/10H01S5/06H01S5/18
Inventor 杜国同夏晓川赵旺梁红伟张宝林
Owner EPITOP PHOTOELECTRIC TECH
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