54 results about "Optical limiting" patented technology

The invention relates to the technical field of semiconductor chip packaging, in particular to a photoelectric co-packaging optical coupling passive alignment packaging structure and method. According to the invention, high-precision automatic alignment of the grating coupler in the optical chip and the through hole of the adapter plate is realized by using the solder ball tension effect in the flip reflow soldering process of the optical chip, and a stable optical limiting structure is formed. The passive coupling of the optical elements (such as bare optical fibers, optical fiber arrays, reflectors and the like) and the grating coupler is realized by placing the optical elements with matched sizes in the via holes of the adapter plate and completing refractive index matching and structure fixing by using curing glue. The whole process does not need additional active alignment equipment, is the same as a traditional chip packaging process, has the advantages of being simple in process, low in cost and high in packaging efficiency, and is a key packaging technology of a photoelectric co-packaging system in the future.

Higher modulation speed is achieved for a laser device comprising: an active layer structure between a semiconductor substrate and a grating structure configured for manipulation, comprising a common active layer for generation of laser light; a first facet spatially adjacent to one end of and a second facet spatially adjacent to an opposing end of the active layer structure, the first facet emitting laser light, the second facet being opposite the first, both comprising anti-reflection coating; the grating structure comprising spatially adjacent integral grating sections; a cladding structure for optically confining the laser light and adapted for arranging the grating structure between the active layer and the cladding structure; a DFB structure having a first grating section, at least one DBR structure having a second grating section, the first and second grating sections sharing the common active layer for at least the integral grating sections; the DFB structure comprising a first optical function as lasing function and the at least one DBR structure comprising a second one as optical feedback.

A method for quantum computing includes defining a quantum computing including a sequence of computing steps, wherein a plurality of quantum operations are performed in parallel in each step. An array of ions (40) in an ion trap (24) is segmented into first calculation segments (110) comprising adjacent groups of ions separated by barrier ions by optically confining first barrier ions (112) between the adjacent groups of ions. An excitation field is applied to the ions in the calculation section so as to cause the group of ions to perform the quantum operation in the first step in the sequence. After completing the first step, the array is reconfigured as a second computing section by optically confining second barrier ions, at least some of which differ from the first barrier ions, while preserving at least partial coherence from the first computing section to the second computing section.

The invention relates to the technical field of semiconductor lasers, in particular to a high-speed communication vertical-cavity surface-emitting laser and a preparation method thereof.The high-speed communication vertical-cavity surface-emitting laser comprises a substrate, an epitaxial structure is arranged on the substrate and comprises an active area, a transition DBR layer is arranged on the active area, and a tunnel junction is arranged in the center of the transition DBR layer; the tunnel junction comprises a P-type high-concentration C doping layer and an N-type high-concentration Te doping layer, and a top DBR layer is arranged on the transition DBR layer. The tunnel junction is used for replacing an oxide layer of a traditional oxidizing VCSEL and is used for providing current limitation and optical limitation. According to a traditional oxide layer, the oxidation depth is controlled by oxidizing Al0. 98Ga0. 02As to achieve current and optical limitation of the oxidation caliber, Al interface oxidation can be avoided by replacing the traditional oxide layer with a tunnel junction structure, and the problem of further growth of defects can be prevented. An oxide layer is replaced by a tunnel junction limiting structure, higher emission uniformity and higher repeatability manufacturing can be achieved, the size of an oxidation aperture can be accurately defined, and the stability of a mode can be controlled.

Vertical-cavity surface-emitting lasers (VCSELs) and associated methods of manufacturing are provided. An example VCSEL includes a first reflector, a second reflector, and an active region disposed between the first reflector and the second reflector. The VCSEL further includes an electrical aperture defining a current confinement region configured to direct current to the active region and an optical aperture defining a medium through which light produced by the active region is emitted from the VCSEL. At least one dimension of the optical aperture of the VCSEL is formed independent of the electrical aperture of the VCSEL. In some instances, the dimension of the optical aperture is a first diameter such that the first diameter of the optical aperture is formed independent of a second diameter defined by the electrical aperture.

The invention discloses a covalent organic framework material and a preparation method thereof, an optical limiting material and a preparation method and application thereof, and the preparation method comprises the following steps: carrying out solvothermal reaction on metal perfluorophthalocyanine and an amido-containing monomer in the presence of a first solvent and a catalyst to obtain the covalent organic framework material connected by piperazine bonds. The covalent organic framework material shows good nonlinear optical performance, and the covalent organic framework (COF) and polymethyl methacrylate (PMMA) optical limiting material is uniformly mixed, can be used for preparing optical plastics, and has extremely high application potential in practical application in the nonlinear optical field.

A vertical cavity surface emitting laser (VCSEL) 100 includes a first substrate 110 for example, a GaAs substrate, a first reflector comprising a semiconductor distributed Bragg reflector DBR 120. A s

This invention discloses a method for preparing magnesium antimonide quantum dot optical limiting materials and their applications, belonging to the field of novel inorganic semiconductor quantum dot material preparation. The preparation method involves grinding magnesium antimonide powder in an agate mortar, then placing the ground magnesium antimonide powder in an appropriate amount of ionic liquid solvent. The solution is subjected to ice bath ultrasonic exfoliation, followed by a first centrifugation. The supernatant is then dialyzed, followed by a second centrifugation and freeze-drying to obtain magnesium antimonide quantum dot samples. The ionic liquid solvent used in this invention has advantages such as being green, environmentally friendly, having a high boiling point, and high conductivity. The obtained magnesium antimonide quantum dots have a size of 2 nm to 4 nm, exhibiting antisaturated absorption characteristics and high linear transmittance, balancing protective performance with normal optical functions, and showing good application prospects in fields such as nonlinear optics.

The invention relates to a copper nanocluster / fullerol nano composite material, a polymer nonlinear optical thin film and a preparation method and application of the polymer nonlinear optical thin film, and the copper nanocluster / fullerol nano composite material is a nano composite material which is formed by inducing self-assembly of Cu6 and hydroxyl fullerene C60-OH in an aqueous solution through hydrogen bond interaction and has a nano structure. The nonlinear absorption coefficient of the film obtained by adopting the copper nanocluster / fullerol nanocomposite material is as high as 35.5 * 10 < 4 > cm / GW when the laser energy is 1 mu J, and the optical limiting threshold value is as low as 0.008 J / cm < 2 >, so that the film is obviously superior to the existing metal cluster-based material. The method is simple and convenient in process and environment-friendly, and the prepared film has important application value in the fields of laser protection and precision optical equipment safety.

A higher modulation speed is achieved for a laser device comprising: an active layer structure between a semiconductor substrate and a manipulation-configured lattice structure, with a common active layer for generating laser light; a first facet spatially adjacent to one end and a second facet spatially adjacent to an opposite end of the active layer structure, wherein the first facet emits laser light, the second facet is opposite the first, and both have antireflection coatings; wherein the lattice structure comprises spatially adjacent one-piece lattice sections; and an encapsulation structure for optically confining the laser light, adapted to arrange the lattice structure between the active layer and the encapsulation structure.a DFB structure with a first lattice section, at least one DBR structure with a second lattice section, wherein the first and the second lattice sections share the common active layer for at least the one-piece lattice sections; wherein the DFB structure has a first optical function as a laser function and the at least one DBR structure has a second as optical feedback.

To provide a laser device having a higher modulation speed, a high device yield, and improved array compatibility under either cooled or uncooled operating conditions.SOLUTION: An active layer structure 20 between a semiconductor substrate 30 and a grating structure 40 configured for operation, comprising a common active layer, a first facet 50-1 and a second facet 50-2, wherein the grating structure comprises spatially adjacent integrated grating sections, a cladding structure 70 for optical confinement of laser light, a DFB structure 60-1 with a first grating section 42-1, and a DBR structure 60-2 with a second grating section 42-2, the first grating section and the second grating section share a common active layer for the integrated grating section, the DFB structure includes a first optical function as a lasing function, and the DBR structure includes a second DBR structure as an optical feedback.SELECTED DRAWING: Figure 1

The utility model provides a light limiting valve for an Einstein probe satellite FXT load, which is nested in a groove of an upper cover of a shielding box, and the nearest distance between the light limiting valve and the upper surface of a focal plane detector is 1mm; the light limiting valve is of an inverted-cone-shaped structure and is composed of a light limiting valve support cover, a beryllium shield, an aluminum shield, a magnet, a light limiting valve support and a light limiting valve bottom support. The internal shielding material of the light limiting valve is beryllium of 1 mm, aluminum of 1 mm and a magnet of 1 mm. The three layers of shields are placed layer by layer along the light limiting valve bracket, and the exteriors of four legs at the bottom of the light limiting valve bracket cover tightly press the three layers of shields to limit the transverse displacement of the three layers of shields; the plane flange of the light limiting valve bracket cover simultaneously presses each layer of shielding, so that axial displacement is prevented; a plurality of grooves are formed in the side face of the light limiting valve support, and the light limiting valve bottom supports are inserted into the grooves in the side face of the light limiting valve support. The light limiting valve support cover, the light limiting valve bottom support and the light limiting valve support are fixed through screws. On the premise that the thermal expansion relation is not restrained, the mechanical property of the thermal expansion joint is guaranteed.

This invention relates to a system and method for measuring the internal flow field of film cooling holes in aero-engine blades based on refractive index matching. The system includes a main flow section, a transparent material body below the main flow section, and film cooling holes embedded within the transparent material body. Cooling fluid flows through the film cooling holes. A laser is positioned above the main flow section, and a high-speed camera is positioned outside the transparent material body. The irradiation range of the laser and the imaging range of the high-speed camera both cover the internal channel region of the film cooling holes. The measurement method includes: introducing the main flow medium into the main flow section, introducing the cooling fluid into the film cooling holes, irradiating the flow field region inside the film cooling holes with a laser beam, and continuously acquiring images of the flow field region using the high-speed camera. Compared with existing technologies, this invention overcomes the optical limitations of traditional methods in measuring complex channels and near-wall regions, significantly improving the visualization and measurement level of the flow structure inside film cooling holes.

The present invention discloses a binuclear iridium complex and its preparation method and application, belonging to the field of optical limiting materials. The present invention prepares four binuclear iridium complexes, and improves the absorption properties of the ground state and excited state of the complex by adjusting the distance between the metal centers, thereby realizing the regulation of the anti-saturation absorption performance of the binuclear iridium complex; and compared with the standard sample fullerene C 60 In comparison, the binuclear iridium complexes prepared in the present invention all have excellent reverse saturation absorption performance, and their optical limiting properties are significantly better than those of the standard sample.

The invention relates to a one-dimensional pyrenyl organic framework nonlinear optical material as well as preparation and application thereof. The material is prepared from a pyrenyl amino monomer (Py) and different dialdehyde monomers (PTDE, PTBE and PDA) through direct Schiff base condensation reaction under a solvothermal condition, a series of one-dimensional linear organic framework material (COF) chain segments are constructed, and a thin film material is further prepared. The obtained material has highly ordered crystallinity, an expanded pi-conjugated skeleton and an obvious donor-acceptor (D-A) charge transfer channel. The one-dimensional pyrenyl D-A COF (Py-PTDE, Py-PTBE and Py-PDA) has the advantages that the one-dimensional pyrenyl D-A COF (Py-PTDE, Py-PTBE and Py-PDA) has the obvious RSA (Reverse Saturated Absorption) effect under the excitation of femtosecond laser (800 nm and 1550 nm) for the first time; compared with the prior art, in particular to a Py-PTDE material, the effective nonlinear absorption coefficient (beta eff) of the Py-PTDE material reaches 116.89 cm. GW <-1 > and 337.03 cm. GW <-1 > at 800 nm and 1550 nm respectively, so that the Py-PTDE material is obviously superior to a precursor material and another two COF materials, and shows a lower optical limiting threshold value at a near-infrared band. The excellent performance is mainly derived from more effective D-A interaction, narrower optical band gap and more efficient intramolecular charge transfer channel in the material. The material disclosed by the invention is simple in preparation method and high in repeatability, and the obtained COF film has excellent thermal stability and optical stability, can be directly used for preparing optical limiting devices and ultrafast optical response devices and can be applied to other three-order nonlinear optical fields.

The utility model relates to a GaN-based laser diode structure, which comprises a GaN substrate, an epitaxial layer is grown on the substrate, and the epitaxial layer comprises a lower covering layer, a lower waveguide layer, a quantum well, an upper waveguide layer, an electron blocking layer, an upper covering layer and an epitaxial contact layer which are sequentially arranged from bottom to top; an ohmic contact layer is arranged on the epitaxial layer, a metal covering layer is plated on the ohmic contact layer, a ridge structure close to a vertical angle is manufactured along the metal covering layer, the ohmic contact layer, the epitaxial contact layer and the upper covering layer, an insulating layer covers the ridge structure, an electron blocking layer covers the ridge structure, a P electrode covers the outer side of the insulating layer, and a substrate is thinned. And manufacturing an N electrode to form a laser diode structure. According to the utility model, ITO is used as an ohmic contact layer, and Pd is matched to be used as a photoetching mask plate; a right-angle surface is formed by utilizing a larger ITO lateral etching angle and combining with a Pd mask; good ohmic contact and a ridge structure close to a vertical angle can be formed, and a good optical limiting effect is achieved.

The high-performance perovskite nanocrystal chalcogenide glass disclosed in this invention is a GeS glass inlaid with CsSnBr3 perovskite nanocrystals. 1.5 Chalcogenide glass composites, the precursor glass of the composite has a molar composition of 95 GeS. 1.5 -5 (CsBr-SnBr2) is a composite material containing CsSnBr3 perovskite nanocrystals with a grain size of 10–80 nm. It is obtained by microcrystallizing a precursor glass at 285–295 °C for 5–20 h. This perovskite nanocrystal chalcogenide glass composite material is free of lead and antimony, two toxic heavy metals, and possesses advantages such as high transmittance, high mechanical strength, strong nonlinear absorption, and excellent optical limiting performance. Its infrared optical transmittance is between 60–80%, and its Vickers hardness can reach up to 279 kg / mm². 2 The maximum nonlinear absorption coefficient is 23.91 cm / GW, and the minimum optical limiting threshold is 45.2 μJ / cm. 2 It is an excellent material for fabricating high-performance optical limiting devices.

The present application belongs to the technical field of semiconductor optoelectronic device process, and relates to a manufacturing method of a semiconductor laser, which can realize beam shaping of a semiconductor laser element. The present application innovatively adopts a selected-area microprocessing technology to realize a selected-area optical limiting microstructure of a laser cavity surface through wafer pretreatment before cleaving of the cavity surface, eliminate cavity surface light emission, and improve beam quality. The greatest advantage of the present application is that the preparation of the selected-area optical limiting microstructure is completed before cleaving of the cavity surface, which can avoid cavity surface pollution and solve the far-field "square window" problem, improve product performance and production yield, and provide reliable technical support for commercial application.

The invention discloses a compound optical amplitude limiting structure based on stimulated Brillouin effect and a design method thereof, and relates to the technical field of laser amplitude limiting, the compound optical amplitude limiting structure comprises packaging protection layers which are sequentially arranged along the optical path direction, the packaging protection layers are made of neodymium-doped lithium yttrium fluoride glass, the packaging protection layers are in a rectangular flat plate shape, and the packaging protection layers are made of neodymium-doped lithium yttrium fluoride glass. Extending narrow edges are arranged on the two sides in the light path direction, so that a combined structure with a containing space is formed; the first optical amplitude limiting dielectric layer is made of CS2 liquid, and one side of the isolation layer is in contact with the surface of the first optical amplitude limiting dielectric layer; the second optical amplitude limiting dielectric layer is made of TeO2 crystals, and the compound optical amplitude limiting structure based on the stimulated Brillouin effect and the design method of the compound optical amplitude limiting structure solve the problem that in the prior art, a laser amplitude limiting material is difficult to give consideration to both high and low light transmittance and high light consumption rate at the same time. The compound optical amplitude limiting structure based on the stimulated Brillouin effect and the design method of the compound optical amplitude limiting structure based on the stimulated Brillouin effect solve the problem.

The invention discloses a torsion regulation-based ultrafast broadband optical limiting material design method, a material and application, and relates to the field of optical limiting materials.The torsion regulation-based ultrafast broadband optical limiting material design method comprises the steps that structure optimization is conducted on double-branched-chain polycyclic aromatic hydrocarbon molecules through a computer based on the density functional theory, then the vibration frequency of each molecule is calculated, and the vibration frequency of each molecule is calculated; ensuring that the molecular configuration of the double-branched-chain type polycyclic aromatic hydrocarbon molecule after structure optimization is at the lowest point of a potential energy surface, and obtaining the double-branched-chain type molecule with a polycyclic conjugated structure, wherein the dihedral angle between a core group and a side chain group is 90 degrees; and adjusting a pi bridge between the core group with the polycyclic conjugated structure and the side chain group, so that a dihedral angle between the core group and the side chain group is gradually changed from 90 degrees to 0 degree, thereby obtaining the ultrafast broadband optical limiting material. The research of the invention clearly clarifies the anti-saturated absorption enhancement mechanism of the two-branch anthracene derivatives, and lays a foundation for the development of novel organic optical limiting materials.

The invention provides a high-power low-intensity-noise semiconductor laser chip and a laser, a lower waveguide layer is arranged above an N-type substrate, two optical limiting layers are arranged above the lower waveguide layer, an active layer is clamped between the two optical limiting layers, a grating layer is arranged on the optical limiting layers, and the grating layer is arranged on the N-type substrate. An upper cladding layer is arranged on the grating layer, and a contact metal layer is arranged on the upper cladding layer; the grating layer is integrated with a lambda / 4 phase shift structure; and the semiconductor laser chip adopts a ridge waveguide structure. Compared with a traditional narrow ridge waveguide DFB laser, the narrow ridge waveguide DFB laser has the advantages that under the short cavity length condition, the output power exceeding hundreds of milliwatts, low relative intensity noise, high side mode rejection ratio and the narrow line width of about hundreds of kHz are achieved, and meanwhile the relaxation oscillation frequency of the GHz level is achieved. The laser chip shows good power linearity and single-mode stability in a lower normal temperature range, and is suitable for the fields of high-speed optical fiber communication, microwave photonics and the like with strict requirements on power and noise performance.

The invention belongs to the technical field of preparation of semiconductor micro-nano structures, and particularly relates to a germanium-silicon quasi-suspension micro-ring directly based on a silicon substrate and a preparation method of the germanium-silicon quasi-suspension micro-ring. The method comprises the following steps: firstly, preparing a silicon micro-column with a sunken top central area through a micro-nano template, then growing a germanium-silicon thin film in a heteroepitaxial manner, and finally, carrying out selective wet etching on silicon to obtain the quasi-suspended high-quality germanium-silicon micro-ring resonant cavity. The method for preparing the micro-ring is simple, easy to implement, economical and practical, the formed optical resonant cavity has more excellent optical limiting effect and optical resonance characteristic, thermal contact and electric contact between the annular resonant cavity and the substrate are easy to realize, large-area preparation can be directly performed on the silicon substrate, and the preparation cost is reduced. And a new thought is provided for the structural preparation of the optical microcavity and the design of a novel photoelectric device.

An article comprises: one or more sets of lower index contrast layers, each comprising at least two materials having different indices of refraction, and configured to provide optical confinement based at least in part on a first numerical difference between the two indices of refraction; and one or more sets of higher index contrast layers, each comprising at least two materials having different indices of refraction, and configured to provide optical confinement based at least in part on a second numerical difference; and at least one optical coupler configured to optically couple a first of the one or more sets of lower index contrast layers to a first of the one or more sets of higher index contrast layers. The first numerical difference is smaller than the second numerical difference.

A glucose detection or monitoring system that includes a VCSEL laser with one or more active regions having quantum wells and barrier. The active regions are surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure, and one or more tunnel junctions (TJ). One or more apertures are provided with the selected shape structure, one or more buried tunnel junctions (BTJ) or oxide confine apertured, additional TJ's, planar structures and or additional BTJ's created during a regrowth process that is independent of a first growth process with a VCSEL output determined in response to a monitoring application of the VCSEL, the VCSEL having an HCG grating and a bottom DBR. A housing of a wearable device interior houses the VCSEL laser.

The present invention discloses a GaN-based semiconductor laser with a confinement factor enhancement layer, which sequentially includes a substrate, a lower cladding layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper cladding layer from bottom to top. There is a confinement factor enhancement layer between the electron blocking layer and the upper cladding layer, and the confinement factor enhancement layer includes a first confinement factor enhancement layer and a second confinement factor enhancement layer; the thickness of the confinement factor enhancement layer is 5-1000 nm. The present invention designs the refractive index coefficient, electron mobility, breakdown field strength, and electron affinity change angles and change curves of the first confinement factor enhancement layer and the second confinement factor enhancement layer, regulates the effective refractive index difference to achieve a high kink level, realizes a far-field FFP image with a low aspect ratio, reduces the horizontal divergence angle, reduces stray light and leakage light, reduces the far-field FFP image of local interference, and improves the optical confinement effect and the beam quality factor.

The invention relates to a photodetector comprising a support layer (10), a grating structure (20) and an active layer (30). The grating structure (20), called a photonic crystal structure, comprises a structured layer (22) formed of patterns (22.1) and a continuous sub-layer (22.2) of constant thickness eccs not being zero, the patterns (22.1) widening in a direction oriented towards the continuous sub-layer (22.2). In addition, the photonic crystal structure (20) has dimensions such that the structured layer (22) forms a photonic crystal which supports at least one guided mode capable of being excited by the incident light radiation of interest, the photonic crystal being optically coupled to the active layer (30) so that the guided mode is optically confined in the structured layer (22) and the active layer (30). Figure for abstract: Figure 2A

An electro-optic device comprising a waveguide (WG)-device configured as an electro-absorption modulator (EAM) and electronics comprising an EAM driver. The electro-optic device comprising: a semi-insulating (SI) indium phosphide (InP) substrate; an epitaxial layer stack formed on the SI:InP substrate comprising a first plurality of semiconductor layers forming InP heterojunction bipolar transistors of the electronics and a second plurality of semiconductor layers structured to form a PIN waveguide of the EAM, the PIN waveguide comprising: an n-layer structure and a p-layer structure; an i-region comprising optical material located between the n-layer structure and the p-layer structure; the n-layer structure and the p-layer structure configured to optical confine one or more modes of an optical signal configured to propagate through the i-region; and at least one of the n-layer structure and the p-layer structure comprises a mode extending layer.

The application relates to the technical field of semiconductor lasers, in particular to a high-speed communication vertical cavity surface emitting laser and a preparation method thereof. The tunnel junction is used to replace the traditional oxidation layer of the VCSEL, and is used for providing current limitation and optical limitation. 0.98 Ga 0.02 As controls the oxidation depth to realize current and optical limitation of the oxidation aperture, and the replacement of the tunnel junction structure can also avoid Al interface oxidation and can prevent further growth of defects. The replacement of the oxidation layer by the tunnel junction limitation structure can realize higher emission uniformity and higher repeatability in manufacturing, can accurately define the size of the oxidation aperture, and control the stability of the mode.

A method of manufacturing a quantum circuit, the method includes forming, in a diamond layer that includes a color center, an optical waveguide optically coupled the color center, the diamond layer having a first principal surface and a second principal surface, wherein the optical waveguide includes: a core region that includes the color center; and an optical confinement region provided around the core region, a refractive index of the optical confinement region is lower than the refractive index of the core region.

The application discloses copper oxide nanosheets, a preparation method and application thereof. The preparation method comprises the following steps: dispersing layered copper hydroxide acetate in an intercalation agent solution to perform ion exchange; adjusting the solution obtained after the ion exchange to be alkaline, and heating to reflux to obtain black precipitate; and washing and drying the black precipitate to obtain the copper oxide nanosheets. The method has mild conditions, and the copper oxide nanosheets prepared by the method have large lateral size and thin thickness, and can be well used in optical limiting devices.