37 results about "Optical limiting" patented technology

Higher modulation speed is achieved for a laser device comprising: an active layer structure between a semiconductor substrate and a grating structure configured for manipulation, comprising a common active layer for generation of laser light; a first facet spatially adjacent to one end of and a second facet spatially adjacent to an opposing end of the active layer structure, the first facet emitting laser light, the second facet being opposite the first, both comprising anti-reflection coating; the grating structure comprising spatially adjacent integral grating sections; a cladding structure for optically confining the laser light and adapted for arranging the grating structure between the active layer and the cladding structure; a DFB structure having a first grating section, at least one DBR structure having a second grating section, the first and second grating sections sharing the common active layer for at least the integral grating sections; the DFB structure comprising a first optical function as lasing function and the at least one DBR structure comprising a second one as optical feedback.

A method for quantum computing includes defining a quantum computing including a sequence of computing steps, wherein a plurality of quantum operations are performed in parallel in each step. An array of ions (40) in an ion trap (24) is segmented into first calculation segments (110) comprising adjacent groups of ions separated by barrier ions by optically confining first barrier ions (112) between the adjacent groups of ions. An excitation field is applied to the ions in the calculation section so as to cause the group of ions to perform the quantum operation in the first step in the sequence. After completing the first step, the array is reconfigured as a second computing section by optically confining second barrier ions, at least some of which differ from the first barrier ions, while preserving at least partial coherence from the first computing section to the second computing section.

The invention relates to the technical field of semiconductor lasers, in particular to a high-speed communication vertical-cavity surface-emitting laser and a preparation method thereof.The high-speed communication vertical-cavity surface-emitting laser comprises a substrate, an epitaxial structure is arranged on the substrate and comprises an active area, a transition DBR layer is arranged on the active area, and a tunnel junction is arranged in the center of the transition DBR layer; the tunnel junction comprises a P-type high-concentration C doping layer and an N-type high-concentration Te doping layer, and a top DBR layer is arranged on the transition DBR layer. The tunnel junction is used for replacing an oxide layer of a traditional oxidizing VCSEL and is used for providing current limitation and optical limitation. According to a traditional oxide layer, the oxidation depth is controlled by oxidizing Al0. 98Ga0. 02As to achieve current and optical limitation of the oxidation caliber, Al interface oxidation can be avoided by replacing the traditional oxide layer with a tunnel junction structure, and the problem of further growth of defects can be prevented. An oxide layer is replaced by a tunnel junction limiting structure, higher emission uniformity and higher repeatability manufacturing can be achieved, the size of an oxidation aperture can be accurately defined, and the stability of a mode can be controlled.

Vertical-cavity surface-emitting lasers (VCSELs) and associated methods of manufacturing are provided. An example VCSEL includes a first reflector, a second reflector, and an active region disposed between the first reflector and the second reflector. The VCSEL further includes an electrical aperture defining a current confinement region configured to direct current to the active region and an optical aperture defining a medium through which light produced by the active region is emitted from the VCSEL. At least one dimension of the optical aperture of the VCSEL is formed independent of the electrical aperture of the VCSEL. In some instances, the dimension of the optical aperture is a first diameter such that the first diameter of the optical aperture is formed independent of a second diameter defined by the electrical aperture.

The invention discloses a covalent organic framework material and a preparation method thereof, an optical limiting material and a preparation method and application thereof, and the preparation method comprises the following steps: carrying out solvothermal reaction on metal perfluorophthalocyanine and an amido-containing monomer in the presence of a first solvent and a catalyst to obtain the covalent organic framework material connected by piperazine bonds. The covalent organic framework material shows good nonlinear optical performance, and the covalent organic framework (COF) and polymethyl methacrylate (PMMA) optical limiting material is uniformly mixed, can be used for preparing optical plastics, and has extremely high application potential in practical application in the nonlinear optical field.

This invention discloses a method for preparing magnesium antimonide quantum dot optical limiting materials and their applications, belonging to the field of novel inorganic semiconductor quantum dot material preparation. The preparation method involves grinding magnesium antimonide powder in an agate mortar, then placing the ground magnesium antimonide powder in an appropriate amount of ionic liquid solvent. The solution is subjected to ice bath ultrasonic exfoliation, followed by a first centrifugation. The supernatant is then dialyzed, followed by a second centrifugation and freeze-drying to obtain magnesium antimonide quantum dot samples. The ionic liquid solvent used in this invention has advantages such as being green, environmentally friendly, having a high boiling point, and high conductivity. The obtained magnesium antimonide quantum dots have a size of 2 nm to 4 nm, exhibiting antisaturated absorption characteristics and high linear transmittance, balancing protective performance with normal optical functions, and showing good application prospects in fields such as nonlinear optics.

The invention relates to a copper nanocluster / fullerol nano composite material, a polymer nonlinear optical thin film and a preparation method and application of the polymer nonlinear optical thin film, and the copper nanocluster / fullerol nano composite material is a nano composite material which is formed by inducing self-assembly of Cu6 and hydroxyl fullerene C60-OH in an aqueous solution through hydrogen bond interaction and has a nano structure. The nonlinear absorption coefficient of the film obtained by adopting the copper nanocluster / fullerol nanocomposite material is as high as 35.5 * 10 < 4 > cm / GW when the laser energy is 1 mu J, and the optical limiting threshold value is as low as 0.008 J / cm < 2 >, so that the film is obviously superior to the existing metal cluster-based material. The method is simple and convenient in process and environment-friendly, and the prepared film has important application value in the fields of laser protection and precision optical equipment safety.

A higher modulation speed is achieved for a laser device comprising: an active layer structure between a semiconductor substrate and a manipulation-configured lattice structure, with a common active layer for generating laser light; a first facet spatially adjacent to one end and a second facet spatially adjacent to an opposite end of the active layer structure, wherein the first facet emits laser light, the second facet is opposite the first, and both have antireflection coatings; wherein the lattice structure comprises spatially adjacent one-piece lattice sections; and an encapsulation structure for optically confining the laser light, adapted to arrange the lattice structure between the active layer and the encapsulation structure.a DFB structure with a first lattice section, at least one DBR structure with a second lattice section, wherein the first and the second lattice sections share the common active layer for at least the one-piece lattice sections; wherein the DFB structure has a first optical function as a laser function and the at least one DBR structure has a second as optical feedback.

To provide a laser device having a higher modulation speed, a high device yield, and improved array compatibility under either cooled or uncooled operating conditions.SOLUTION: An active layer structure 20 between a semiconductor substrate 30 and a grating structure 40 configured for operation, comprising a common active layer, a first facet 50-1 and a second facet 50-2, wherein the grating structure comprises spatially adjacent integrated grating sections, a cladding structure 70 for optical confinement of laser light, a DFB structure 60-1 with a first grating section 42-1, and a DBR structure 60-2 with a second grating section 42-2, the first grating section and the second grating section share a common active layer for the integrated grating section, the DFB structure includes a first optical function as a lasing function, and the DBR structure includes a second DBR structure as an optical feedback.SELECTED DRAWING: Figure 1

This invention relates to a system and method for measuring the internal flow field of film cooling holes in aero-engine blades based on refractive index matching. The system includes a main flow section, a transparent material body below the main flow section, and film cooling holes embedded within the transparent material body. Cooling fluid flows through the film cooling holes. A laser is positioned above the main flow section, and a high-speed camera is positioned outside the transparent material body. The irradiation range of the laser and the imaging range of the high-speed camera both cover the internal channel region of the film cooling holes. The measurement method includes: introducing the main flow medium into the main flow section, introducing the cooling fluid into the film cooling holes, irradiating the flow field region inside the film cooling holes with a laser beam, and continuously acquiring images of the flow field region using the high-speed camera. Compared with existing technologies, this invention overcomes the optical limitations of traditional methods in measuring complex channels and near-wall regions, significantly improving the visualization and measurement level of the flow structure inside film cooling holes.

The invention relates to a one-dimensional pyrenyl organic framework nonlinear optical material as well as preparation and application thereof. The material is prepared from a pyrenyl amino monomer (Py) and different dialdehyde monomers (PTDE, PTBE and PDA) through direct Schiff base condensation reaction under a solvothermal condition, a series of one-dimensional linear organic framework material (COF) chain segments are constructed, and a thin film material is further prepared. The obtained material has highly ordered crystallinity, an expanded pi-conjugated skeleton and an obvious donor-acceptor (D-A) charge transfer channel. The one-dimensional pyrenyl D-A COF (Py-PTDE, Py-PTBE and Py-PDA) has the advantages that the one-dimensional pyrenyl D-A COF (Py-PTDE, Py-PTBE and Py-PDA) has the obvious RSA (Reverse Saturated Absorption) effect under the excitation of femtosecond laser (800 nm and 1550 nm) for the first time; compared with the prior art, in particular to a Py-PTDE material, the effective nonlinear absorption coefficient (beta eff) of the Py-PTDE material reaches 116.89 cm. GW <-1 > and 337.03 cm. GW <-1 > at 800 nm and 1550 nm respectively, so that the Py-PTDE material is obviously superior to a precursor material and another two COF materials, and shows a lower optical limiting threshold value at a near-infrared band. The excellent performance is mainly derived from more effective D-A interaction, narrower optical band gap and more efficient intramolecular charge transfer channel in the material. The material disclosed by the invention is simple in preparation method and high in repeatability, and the obtained COF film has excellent thermal stability and optical stability, can be directly used for preparing optical limiting devices and ultrafast optical response devices and can be applied to other three-order nonlinear optical fields.

The utility model relates to a GaN-based laser diode structure, which comprises a GaN substrate, an epitaxial layer is grown on the substrate, and the epitaxial layer comprises a lower covering layer, a lower waveguide layer, a quantum well, an upper waveguide layer, an electron blocking layer, an upper covering layer and an epitaxial contact layer which are sequentially arranged from bottom to top; an ohmic contact layer is arranged on the epitaxial layer, a metal covering layer is plated on the ohmic contact layer, a ridge structure close to a vertical angle is manufactured along the metal covering layer, the ohmic contact layer, the epitaxial contact layer and the upper covering layer, an insulating layer covers the ridge structure, an electron blocking layer covers the ridge structure, a P electrode covers the outer side of the insulating layer, and a substrate is thinned. And manufacturing an N electrode to form a laser diode structure. According to the utility model, ITO is used as an ohmic contact layer, and Pd is matched to be used as a photoetching mask plate; a right-angle surface is formed by utilizing a larger ITO lateral etching angle and combining with a Pd mask; good ohmic contact and a ridge structure close to a vertical angle can be formed, and a good optical limiting effect is achieved.

The high-performance perovskite nanocrystal chalcogenide glass disclosed in this invention is a GeS glass inlaid with CsSnBr3 perovskite nanocrystals. 1.5 Chalcogenide glass composites, the precursor glass of the composite has a molar composition of 95 GeS. 1.5 -5 (CsBr-SnBr2) is a composite material containing CsSnBr3 perovskite nanocrystals with a grain size of 10–80 nm. It is obtained by microcrystallizing a precursor glass at 285–295 °C for 5–20 h. This perovskite nanocrystal chalcogenide glass composite material is free of lead and antimony, two toxic heavy metals, and possesses advantages such as high transmittance, high mechanical strength, strong nonlinear absorption, and excellent optical limiting performance. Its infrared optical transmittance is between 60–80%, and its Vickers hardness can reach up to 279 kg / mm². 2 The maximum nonlinear absorption coefficient is 23.91 cm / GW, and the minimum optical limiting threshold is 45.2 μJ / cm. 2 It is an excellent material for fabricating high-performance optical limiting devices.

The present application belongs to the technical field of semiconductor optoelectronic device process, and relates to a manufacturing method of a semiconductor laser, which can realize beam shaping of a semiconductor laser element. The present application innovatively adopts a selected-area microprocessing technology to realize a selected-area optical limiting microstructure of a laser cavity surface through wafer pretreatment before cleaving of the cavity surface, eliminate cavity surface light emission, and improve beam quality. The greatest advantage of the present application is that the preparation of the selected-area optical limiting microstructure is completed before cleaving of the cavity surface, which can avoid cavity surface pollution and solve the far-field "square window" problem, improve product performance and production yield, and provide reliable technical support for commercial application.

The invention discloses a compound optical amplitude limiting structure based on stimulated Brillouin effect and a design method thereof, and relates to the technical field of laser amplitude limiting, the compound optical amplitude limiting structure comprises packaging protection layers which are sequentially arranged along the optical path direction, the packaging protection layers are made of neodymium-doped lithium yttrium fluoride glass, the packaging protection layers are in a rectangular flat plate shape, and the packaging protection layers are made of neodymium-doped lithium yttrium fluoride glass. Extending narrow edges are arranged on the two sides in the light path direction, so that a combined structure with a containing space is formed; the first optical amplitude limiting dielectric layer is made of CS2 liquid, and one side of the isolation layer is in contact with the surface of the first optical amplitude limiting dielectric layer; the second optical amplitude limiting dielectric layer is made of TeO2 crystals, and the compound optical amplitude limiting structure based on the stimulated Brillouin effect and the design method of the compound optical amplitude limiting structure solve the problem that in the prior art, a laser amplitude limiting material is difficult to give consideration to both high and low light transmittance and high light consumption rate at the same time. The compound optical amplitude limiting structure based on the stimulated Brillouin effect and the design method of the compound optical amplitude limiting structure based on the stimulated Brillouin effect solve the problem.

The invention provides a high-power low-intensity-noise semiconductor laser chip and a laser, a lower waveguide layer is arranged above an N-type substrate, two optical limiting layers are arranged above the lower waveguide layer, an active layer is clamped between the two optical limiting layers, a grating layer is arranged on the optical limiting layers, and the grating layer is arranged on the N-type substrate. An upper cladding layer is arranged on the grating layer, and a contact metal layer is arranged on the upper cladding layer; the grating layer is integrated with a lambda / 4 phase shift structure; and the semiconductor laser chip adopts a ridge waveguide structure. Compared with a traditional narrow ridge waveguide DFB laser, the narrow ridge waveguide DFB laser has the advantages that under the short cavity length condition, the output power exceeding hundreds of milliwatts, low relative intensity noise, high side mode rejection ratio and the narrow line width of about hundreds of kHz are achieved, and meanwhile the relaxation oscillation frequency of the GHz level is achieved. The laser chip shows good power linearity and single-mode stability in a lower normal temperature range, and is suitable for the fields of high-speed optical fiber communication, microwave photonics and the like with strict requirements on power and noise performance.

The invention belongs to the technical field of preparation of semiconductor micro-nano structures, and particularly relates to a germanium-silicon quasi-suspension micro-ring directly based on a silicon substrate and a preparation method of the germanium-silicon quasi-suspension micro-ring. The method comprises the following steps: firstly, preparing a silicon micro-column with a sunken top central area through a micro-nano template, then growing a germanium-silicon thin film in a heteroepitaxial manner, and finally, carrying out selective wet etching on silicon to obtain the quasi-suspended high-quality germanium-silicon micro-ring resonant cavity. The method for preparing the micro-ring is simple, easy to implement, economical and practical, the formed optical resonant cavity has more excellent optical limiting effect and optical resonance characteristic, thermal contact and electric contact between the annular resonant cavity and the substrate are easy to realize, large-area preparation can be directly performed on the silicon substrate, and the preparation cost is reduced. And a new thought is provided for the structural preparation of the optical microcavity and the design of a novel photoelectric device.

A glucose detection or monitoring system that includes a VCSEL laser with one or more active regions having quantum wells and barrier. The active regions are surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure, and one or more tunnel junctions (TJ). One or more apertures are provided with the selected shape structure, one or more buried tunnel junctions (BTJ) or oxide confine apertured, additional TJ's, planar structures and or additional BTJ's created during a regrowth process that is independent of a first growth process with a VCSEL output determined in response to a monitoring application of the VCSEL, the VCSEL having an HCG grating and a bottom DBR. A housing of a wearable device interior houses the VCSEL laser.

The invention relates to a photodetector comprising a support layer (10), a grating structure (20) and an active layer (30). The grating structure (20), called a photonic crystal structure, comprises a structured layer (22) formed of patterns (22.1) and a continuous sub-layer (22.2) of constant thickness eccs not being zero, the patterns (22.1) widening in a direction oriented towards the continuous sub-layer (22.2). In addition, the photonic crystal structure (20) has dimensions such that the structured layer (22) forms a photonic crystal which supports at least one guided mode capable of being excited by the incident light radiation of interest, the photonic crystal being optically coupled to the active layer (30) so that the guided mode is optically confined in the structured layer (22) and the active layer (30). Figure for abstract: Figure 2A

An electro-optic device comprising a waveguide (WG)-device configured as an electro-absorption modulator (EAM) and electronics comprising an EAM driver. The electro-optic device comprising: a semi-insulating (SI) indium phosphide (InP) substrate; an epitaxial layer stack formed on the SI:InP substrate comprising a first plurality of semiconductor layers forming InP heterojunction bipolar transistors of the electronics and a second plurality of semiconductor layers structured to form a PIN waveguide of the EAM, the PIN waveguide comprising: an n-layer structure and a p-layer structure; an i-region comprising optical material located between the n-layer structure and the p-layer structure; the n-layer structure and the p-layer structure configured to optical confine one or more modes of an optical signal configured to propagate through the i-region; and at least one of the n-layer structure and the p-layer structure comprises a mode extending layer.

The application relates to the technical field of semiconductor lasers, in particular to a high-speed communication vertical cavity surface emitting laser and a preparation method thereof. The tunnel junction is used to replace the traditional oxidation layer of the VCSEL, and is used for providing current limitation and optical limitation. 0.98 Ga 0.02 As controls the oxidation depth to realize current and optical limitation of the oxidation aperture, and the replacement of the tunnel junction structure can also avoid Al interface oxidation and can prevent further growth of defects. The replacement of the oxidation layer by the tunnel junction limitation structure can realize higher emission uniformity and higher repeatability in manufacturing, can accurately define the size of the oxidation aperture, and control the stability of the mode.

A method of manufacturing a quantum circuit, the method includes forming, in a diamond layer that includes a color center, an optical waveguide optically coupled the color center, the diamond layer having a first principal surface and a second principal surface, wherein the optical waveguide includes: a core region that includes the color center; and an optical confinement region provided around the core region, a refractive index of the optical confinement region is lower than the refractive index of the core region.

The application discloses copper oxide nanosheets, a preparation method and application thereof. The preparation method comprises the following steps: dispersing layered copper hydroxide acetate in an intercalation agent solution to perform ion exchange; adjusting the solution obtained after the ion exchange to be alkaline, and heating to reflux to obtain black precipitate; and washing and drying the black precipitate to obtain the copper oxide nanosheets. The method has mild conditions, and the copper oxide nanosheets prepared by the method have large lateral size and thin thickness, and can be well used in optical limiting devices.

The application discloses a continuous domain bound state laser based on a mixed cavity structure and a preparation method thereof. The laser comprises, from bottom to top along a vertical direction, a substrate, an optical confinement layer, an N-type interval layer, an active layer, a P-type interval layer, a photonic crystal layer and a current expansion layer. The optical confinement layer at the bottom and the photonic crystal layer at the top jointly form a vertical mixed resonant cavity, and the active layer is located in the resonant cavity and maintains an un-etched complete layered structure. The photonic crystal layer is provided with a periodic nano-pore array penetrating through and is configured to support a BIC mode. The application separates the gain medium and the optical field regulation structure physically, avoids etching damage of the active layer in a traditional process, and significantly reduces surface non-radiation recombination loss. Meanwhile, in combination with the current expansion layer design, efficient vertical heat dissipation and uniform electric injection of the device are realized, and the device has the advantages of low threshold, high single-mode stability and wavelength regulation and the like.

The application relates to a kind of fusion porphyrin axial modification Ti3C2T x Nonlinear optical nanohybrid materials, their preparation and use, the nanohybrid materials are fused porphyrin by the zinc atom of ring center and covalently connected on the surface of Ti3C2T x The nitrogen atom on the pyridine ring on the surface of nanosheet forms a coordination bond. Compared with single functional components, the nanohybrid material TFP-Ti3C2T x Both nanosecond pulsed light at 532 nm and femtosecond pulsed light at 800 nm exhibit significantly enhanced optical limiting effect. The application develops a surface chemical modification strategy for titanium carbide MXene, and the obtained nanohybrid material exhibits optical limiting performance in cross-time domain and spectral domain, which has the potential to be applied to modern photonic or optoelectronic devices.

The invention relates to the technical field of semiconductor lasers for optical communication, in particular to a single-transverse-mode deep-ridge waveguide CW-DFB laser and a preparation method thereof, and the method comprises the steps: designing a main waveguide and a passive waveguide, coupling a high-order mode of a main ridge to an edge ridge through a coupling resonance principle, not carrying out the current injection of the edge ridge, and finally eliminating a high-order transverse mode of the main ridge; on the basis of increasing the output power of the wide-ridge waveguide, a quantum well region between a main ridge and an edge ridge is etched, and Fe-InP with a lower refractive index than that of an original quantum well is filled in order to ensure that a high-order transverse mode can be coupled to the edge ridge, so that the transverse optical limiting factor of the main ridge is improved, and the threshold current is reduced while the light beam quality is ensured; and the Fe-InP filling material between the main ridge and the side ridge has higher thermal conductivity than the original quantum well, so that the heat dissipation capability of the device can be further improved, the high-temperature saturation current can be increased, the signal distortion can be reduced, and the strict requirement of long-distance communication on wavelength stability can be met.

This application discloses a gallium nitride (GaN) laser and a method for improving its lateral modes based on an anti-waveguide. The method includes: processing the epitaxial structure of the GaN laser to remove a contact layer, a second optical confinement layer, and a portion of the second waveguide layer, thereby forming a ridge structure; and depositing a high-refractive-index thin film on at least a portion of the surface of the second waveguide layer surrounding the ridge structure to form an anti-waveguide structure. By forming the anti-waveguide structure in the GaN laser, this application enables modulation of the effective refractive index in regions other than the ridge structure, providing an effective means of modulating the effective refractive index difference between the ridge structure and the regions outside it. Furthermore, by adjusting the magnitude of this effective refractive index difference, the generation of more higher-order modes can be suppressed, reducing beam quality M. 2 This factor significantly improves the spot quality of gallium nitride lasers.

This invention discloses a photo-switching organoiridium metal complex, its preparation method, and its applications, belonging to the field of photoisomerization materials technology. This invention involves forming an N^N ligand through a Sonogashira coupling reaction between alkynyl spiropyran and phenanthroline, and finally coordinating with a bridging ligand to form a photo-switching organoiridium metal complex. This photo-switching iridium metal material combines nonlinear optical materials with photoisomerizing spiropyran molecules, exhibiting excellent optical limiting performance, good photothermal stability, photoisomerization characteristics, fatigue resistance, bleaching resistance, and excellent laser protection performance. Furthermore, after ultraviolet irradiation, the expansion of the complex's conjugation degree due to the ring-opening of the spiropyran molecule further enhances its laser protection performance.

A semiconductor optical amplifier and a fabricating method for a semiconductor optical amplifier. The semiconductor optical amplifier comprises, from bottom to top, an N-type electrode, an N-type substrate, a first passive waveguide layer, an N-type cladding layer, a first separated confinement heterostructure (SCH) layer, an active region, a second SCH layer, a first P-type cladding layer, a first P-type contact layer, and a P-type electrode, wherein the thickness of the first passive waveguide layer is less than 1 micron, and the width of the first passive waveguide layer is less than the width of the N-type substrate. By optimizing the thickness of the passive waveguide to regulate the optical confinement factor, a semiconductor optical amplifier having watt-level high saturation output power is achieved.

Some implementations described herein include a semiconductor laser having a distribution of a coupling coefficient. The semiconductor laser includes a substrate, and a semiconductor multilayer. The semiconductor multilayer includes an active layer, a grating layer, and an optical confinement adjustment layer which is flat. The semiconductor multilayer forms a first region and a second region. The optical confinement adjustment layer includes a high refractive index region, and a low refractive index region having a refractive index lower than a refractive index of the high refractive index region. The high refractive index region is arranged in any one of the first region or the second region and the low refractive index region is arranged in another one of the first region or the second region so that a first coupling coefficient of the first region becomes larger than a second coupling coefficient of the second region.