Nitride light-emitting device for improving light-emitting efficiency by electron barrier layer

Abstract

The invention discloses a nitride light-emitting device for improving the light-emitting efficiency by an electron barrier layer. The light-emitting device disclosed by the invention is provided with the electron barrier layer which is doped with aluminum in a non-uniform and non-periodic manner, and has changed Al components. According to the invention, two key problems of improving the light-emitting efficiency are effectively and simultaneously solved, namely a potential barrier of hole tunneling is reduced and the injection efficiency of a hole is improved; and furthermore, parasitic electron inversion layers are prevented from being formed on interfaces of a quantum barrier and the electron barrier layer by a traditional structure. However, the effect on stopping electrons by a multilayer structure is more obvious and two current carriers of the electrons and the hole are distributed in each quantum well of an active layer in a more balanced and uniform way, so as to obtain the more uniform light gain. Therefore, the light-emitting device provided by the invention can effectively overcome a parasitic quantum well phenomenon and has a smaller threshold current. Furthermore, a waveguide structure is provided with a higher optical limiting factor so that a stronger light-emitting strength is obtained; and therefore, the electric performance and the optical performance of a laser device can be simultaneously improved.

Description

technical field [0001] The invention relates to a nitride semiconductor material-based light-emitting device, in particular to a nitride light-emitting device which utilizes an electron blocking layer to improve luminous efficiency. Background technique [0002] The nitride material system (aluminum nitride AlN, gallium nitride GaN and indium nitride InN) is a direct band gap semiconductor, which can form ternary and quaternary solid solution alloys, with a band gap from 0.63eV to 6.4eV, corresponding to the range of luminescence Covering the entire visible light region and extending to the deep ultraviolet and mid-infrared bands, the nitride material system can be used to prepare high-efficiency optoelectronic devices from the mid-infrared light band to the deep ultraviolet, including the entire visible light region. GaN-based light-emitting diodes are the cornerstone of solid-state lighting; nitride lasers are the core devices for next-generation high-density optical stora...

AI Technical Summary

Problems solved by technology

However, the multi-period electron blocking layer will form a potential barrier at the well-barrier interface, which is not conducive to hole tunneling, resulting in a considerable number of holes being distributed in the quantum wells of the electron blocking layer.

On the other hand, because the refractive index of InGaN or GaN material is similar to that of the active layer, it will cause a low optical confinement factor in the waveguide structure, which is not conducive to the confinement of the optical field.

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