Top emission organic light-emitting device and manufacturing method thereof

A luminescence and top-emission technology, applied in the direction of organic semiconductor devices, electric solid devices, chemical instruments and methods, etc., can solve problems such as unfavorable light efficiency, insufficient transmittance, unbalanced carrier injection, etc., and achieve improved Injection efficiency, high light efficiency, the effect of realizing light effect

Inactive Publication Date: 2014-04-16
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually a thin layer of metal Ag or Al is used as the transparent cathode layer, but the transmittance of this thin film material is not high enough, and when the ITO thin film is used as the cathode layer, because the work function is too high, it is not good for electron injection, so it is not conducive to light efficiency. improvement
In addition, since the mobility of holes is higher than that of electrons in organic materials, it is easy to have the problem of unbalanced carrier injection during the carrier injection process of organic electroluminescence, thus inhibiting the improvement of light efficiency. improve

Method used

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  • Top emission organic light-emitting device and manufacturing method thereof
  • Top emission organic light-emitting device and manufacturing method thereof
  • Top emission organic light-emitting device and manufacturing method thereof

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preparation example Construction

[0033] like figure 2 As shown, this embodiment also provides a method for preparing a top-emitting organic electroluminescent device, including the following steps:

[0034] In step S210, a cathode layer is prepared by vapor deposition on a clean substrate by using a vacuum coating method.

[0035] Before use, the substrate can be ultrasonically cleaned in deionized water containing detergent. After cleaning, it is treated with isopropanol and acetone in ultrasonic for 20 minutes, and then dried with nitrogen to form a clean substrate.

[0036] In step S220, a vacuum coating method is used to vapor-deposit multiple sub-transport layers on the cathode layer to form an electron transport layer. Wherein, the material of each sub-transport layer includes a host material and a doping material doped in the host material, and the host material is 2-(4-biphenyl)-5-(4-tert-butyl)phenyl-1 ,3,4-oxadiazole, (8-hydroxyquinoline)-aluminum, 4,7-diphenyl-phenanthroline, 1,3,5-tris(1-phenyl...

Embodiment 1

[0042] The structure of the top emission organic electroluminescence device of the present embodiment is: glass substrate / Ag / (CsN 3 :Bphen(20%) / CsN 3 :Bphen(15%) / CsN 3 :Bphen(10%) / CsN 3 :Bphen(5%)) / BAlq / Ir(MDQ) 2 (acac): NPB(5%) / TAPC / CuPc / ITO, where ":" in the corresponding layer indicates doping, the percentage data in brackets indicates the doping mass percentage of the former in the corresponding layer, " / " indicates stacking, Concrete preparation process is as follows:

[0043] The glass substrate is placed in deionized water containing detergent for ultrasonic cleaning, and after cleaning, it is treated with isopropanol and acetone in ultrasonic for 20 minutes, and then dried with nitrogen to obtain a clean glass substrate.

[0044] The Ag cathode layer with a thickness of 100nm was prepared by vapor deposition on the surface of a clean glass substrate by vacuum coating method.

[0045] An electron transport layer including four sub-transport layers was prepared by v...

Embodiment 2

[0049] The structure of the top emission organic electroluminescence device of the present embodiment is: glass substrate / Ag / (LiN 3 :TPBi(15%) / LiN 3 :TPBi(12%) / LiN 3 :TPBi(8%) / LiN 3 :TPBi(5%) / LiN 3 :TPBi(1%)) / BAlq / DCJTB: Alq 3 (1%) / TAPC / CuPc / ITO, where ":" in the corresponding layer indicates doping, the percentage data in brackets indicates the doping mass percentage of the former in the corresponding layer, " / " indicates stacking, and the specific preparation process is as follows:

[0050] The glass substrate is placed in deionized water containing detergent for ultrasonic cleaning, and after cleaning, it is treated with isopropanol and acetone in ultrasonic for 20 minutes, and then dried with nitrogen to obtain a clean glass substrate.

[0051] The Ag cathode layer with a thickness of 100nm was prepared by vapor deposition on the surface of a clean glass substrate by vacuum coating method.

[0052] An electron transport layer composed of five sub-transport layers was ...

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Abstract

The invention relates to a top emission organic light-emitting device. The top emission organic light-emitting device comprises a substrate, a cathode electrode layer, an electronic transmission layer, an electron hole barrier layer, a luminous layer, an electronic barrier layer, an electron hole transmission layer and an anode electrode all of which are arranged in a stack-up mode. The electronic transmission layer comprises a plurality of sub-transmission layers which are arranged in a stack-up mode. Each sub-transmission layer is mainly made of main materials and doping materials mingled with the main materials. The light of the top emission organic light-emitting device is emitted from the anode electrode on the top, and therefore the problem that the luminous efficiency of a traditional top emission electrode is low is solved. The gradient doping method is adopted in the electronic transmission layer of the top emission organic light-emitting device, ohm contact is formed between the electronic transmission layer and the cathode electrode layer, and therefore the carrier injection efficiency is improved, the doping concentration is reduced gradually along with the increasing of the thickness of the electronic transmission layer, electrons are injected and transmitted in a gradient mode, carrier injection is controlled, excition recombination can be controlled, and the high light-effect is achieved. The invention further relates to a manufacturing method for the top emission organic light-emitting device.

Description

technical field [0001] The invention relates to the field of electroluminescence, in particular to a top-emitting organic electroluminescence device and a preparation method thereof. Background technique [0002] Organic Light Emission Diode (hereinafter referred to as OLED) has the characteristics of high brightness, wide range of material selection, low driving voltage, fully cured active light emission, etc., and has the advantages of high definition, wide viewing angle and fast response speed. A display technology and light source with great potential, in line with the development trend of mobile communication and information display in the information age, and the requirements of green lighting technology, is the focus of many researchers at home and abroad. [0003] Currently, organic electroluminescent devices are widely used in displays. When organic electroluminescence is applied to display, silicon is generally used as the substrate, but since silicon is opaque, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H01L51/54H01L51/56C09K11/06
CPCH10K50/165H10K50/166H10K2102/3026H10K71/00
Inventor 周明杰王平冯小明钟铁涛
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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