Manufacturing method of GaN-based LED by annealing to strip and inverse SiC substrate

Abstract

The invention provides a manufacturing method of a GaN-based LED by annealing to strip and inverse a SiC substrate. The method comprises the following steps of: (1), etching interlaced channels on the surface of the primary SiC substrate to expose small square columns so as to form a primary SiC pattern substrate; (2), growing epitaxial wafers with conventional structures on the formed primary SiC pattern substrate by a conventional method, wherein the epitaxial wafer comprises a substrate, an AlN buffer layer, an N-type GaN layer, an MQW layer and a P-type GaN layer; (3), plating a layer of reflective metal on the P-type GaN layer on the upper surface of the grown epitaxial wafers, and bonding the reflective metal on a new SiC or Si substrate; and (4), putting the bonded epitaxial wafersin a high-temperature annealing furnace and annealing to strip the primary substrate on the epitaxial wafers. The SiC substrate is successfully inversed and stripped by a method of annealing to stripthe primary substrate due to different thermal expansion coefficients between the SiC substrate and GaN; the light emitting rate is over 90 percent; and the problem of low light emitting efficiency is solved.

Description

technical field [0001] The invention relates to a stripping method of a SiC flip-chip LED that is annealed and stripped from a pattern substrate, and belongs to the field of optoelectronic technology. Background technique [0002] Due to the high power density of the high-power LED chip, the designer and manufacturer of the device must optimize the thermal system of the device in terms of structure and materials. At present, there are two types of GaN-based epitaxial substrate materials: one is sapphire represented by Nichia Chemical of Japan; the other is SiC substrate represented by CREE of the United States. In the traditional sapphire substrate GaN chip structure, the electrodes are just located on the light-emitting surface of the chip. In this structure, a small portion of the p-GaN layer and the "light emitting" layer are etched to make electrical contact with the underlying n-GaN layer. Light is extracted from the topmost p-GaN layer. The limited electrical conduc...

AI Technical Summary

Problems solved by technology

[0012] The present invention aims at the problems of low reliability, low power, less than 50% front light output efficiency, and inability to adopt flip-chip structure for LEDs on SiC substrates in the existing production of LEDs based on SiC or Si substrates, etc., and provides a Fabrication method of annealing and stripping flip-chip GaN-based LEDs from SiC substrates capable of improving luminous intensity

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