The invention belongs to the technical field of semiconductor materials, and discloses a two-dimensional material, and a stripping method and application thereof. The two-dimensional material is prepared by the following steps: mixing aggregation-induced emission molecules with a solid material with a multilayer structure, adding a solvent, carrying out grinding, then adding a solvent, carrying out ultrasonic treatment, and carrying out centrifugal filtration. The solid material with a multilayer structure is graphite, hexagonal boron nitride, a transition-metal sulfide, a transition-metal selenide, a transition-metal oxide or black phosphorus. The method has the advantages of short stripping time, simple operation process and high repeatability, and the layers of the prepared two-dimensional material keep the characteristics of single layer or few layers, large layer area, and the like, and the two-dimensional material can be directly used to prepare semiconductor photoelectric devices.